JP6269058B2 - 熱硬化性樹脂組成物 - Google Patents
熱硬化性樹脂組成物 Download PDFInfo
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- JP6269058B2 JP6269058B2 JP2013518095A JP2013518095A JP6269058B2 JP 6269058 B2 JP6269058 B2 JP 6269058B2 JP 2013518095 A JP2013518095 A JP 2013518095A JP 2013518095 A JP2013518095 A JP 2013518095A JP 6269058 B2 JP6269058 B2 JP 6269058B2
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- thermosetting resin
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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Description
本願は、2011年5月31日に、日本に出願された特願2011−121444号に基づき優先権を主張し、その内容をここに援用する。
基材と、半導体素子とを接着する液状の熱硬化性樹脂組成物であって、
前記熱硬化性樹脂組成物は熱硬化性樹脂を含有し、その熱硬化性樹脂中に、金属粒子および絶縁粒子が分散しており、
前記金属粒子は鱗片形状または楕円球形状を有し、
前記熱硬化性樹脂中の前記金属粒子の体積含有率をaとし、前記熱硬化性樹脂中の前記絶縁粒子の体積含有率をbとしたとき、
前記熱硬化性樹脂中のフィラーの体積含有率(a+b)が、0.20以上0.50以下であり、
前記フィラー中の前記金属粒子の体積含有率a/(a+b)が、0.03以上0.70以下であり、
前記絶縁粒子のレーザー回折散乱式粒度分布測定法による個数標準粒度分布におけるメジアン径d50が3μm以上8μm以下である、熱硬化性樹脂組成物が提供される。
さらに、フィラー中の金属粒子の体積含有率a/(a+b)が上記範囲内であると、絶縁粒子の部分的な集合体が生じ、その集合体によって鱗片形状または楕円球形状の金属粒子の長軸が重力方向に対して平行に配列する。また、その集合体がない部分では金属粒子が重力方向に対して垂直に配列する。そのため、絶縁粒子の集合体により、金属粒子の垂直方向と水平方向の接触部分ができる。よって、接着層が上記の条件を満たすときに、接着層の膜厚方向において良好な導電性を実現できると推察される。
はじめに、本実施形態における半導体装置の構成について説明する。図1は、本実施形態における半導体装置10の構成を示す断面図である。
本実施形態における半導体装置10は、基材2と、半導体素子3と、基材2および半導体素子3の間に介在し、両者を接着する接着層1と、を備えている。
またこの上限値以下であると、接着層1界面の平滑性が優れ、接着層1と基材2または半導体素子3との接触抵抗が小さくなる。
さらに、この上限値以下であると、絶縁粒子の部分的な集合体が生じ、その集合体によって鱗片形状または楕円球形状の金属粒子の長軸が重力方向に対して平行に配列する。また、その集合体がない部分では金属粒子が重力方向に対して垂直に配列する。そのため、絶縁粒子の集合体により、金属粒子の垂直方向と水平方向の接触部分ができ、接着層1の膜厚方向において導電ネットワークが効率よく形成される。
したがって、上記の条件を満たす接着層1は、接着層の膜厚方向において良好な導電性を実現できる。
体積含有率a=(金属粒子の占める体積)
/[(金属粒子の占める体積)+(絶縁粒子の占める体積)+(樹脂成分の占める体積)] (1)
体積含有率b=(絶縁粒子の占める体積)
/[(金属粒子の占める体積)+(絶縁粒子の占める体積)+(樹脂成分の占める体積)] (2)
ここで、樹脂成分とは、接着層1中の金属粒子および絶縁粒子以外の成分を表す。
樹脂成分の占める体積は、金属粒子および絶縁粒子以外の重量と比重から算出する。樹脂成分の比重は、フィラーを含まない樹脂ペーストによって接着層を作製し、その接着層の比重を樹脂成分の比重として用いる。また、金属粒子の占める体積と絶縁粒子の占める体積も同様に重量と真比重から算出する。
ここで、接着層樹脂成分の比重は浮力式密度比重計で測定することができる。また。金属粒子と絶縁粒子の真比重は、公知文献の値を用いることができる。ただし、金属粒子と絶縁粒子の真比重は、公知文献に記載されていない場合は例えば,比重既知の液体と混合して振動式密度比重計で混合物の比重を測定してその重量と体積の関係を計算し、算出することができる。
つぎに、接着層1を形成する樹脂ペーストについて説明する。本実施形態における樹脂ペーストは、(A)熱硬化性樹脂、(B)金属粒子、(C)絶縁粒子を含有している。
(A)熱硬化性樹脂は、加熱により3次元的網目構造を形成する一般的な熱硬化性樹脂である。この(A)熱硬化性樹脂は、特に限定されないが、液状樹脂組成物を形成する材料であることが好ましく、室温で液状であることが望ましい。例えば、シアネート樹脂、エポキシ樹脂、ラジカル重合性の炭素−炭素二重結合を1分子内に2つ以上有する樹脂などが挙げられる。
また、シアネート樹脂と、エポキシ樹脂、オキセタン樹脂、ラジカル重合性の炭素−炭素二重結合を1分子内に2つ以上有する樹脂などの他の樹脂と併用することも可能である。
(A)熱硬化性樹脂に係るエポキシ樹脂のうち、グリシジル基を1分子に2つ以上含む化合物としては、ビスフェノールA、ビスフェノールF、ビフェノールなどのビスフェノール化合物またはこれらの誘導体、水素添加ビスフェノールA、水素添加ビスフェノールF、水素添加ビフェノール、シクロヘキサンジオール、シクロヘキサンジメタノール、シジロヘキサンジエタノールなどの脂環構造を有するジオールまたはこれらの誘導体、ブタンジオール、ヘキサンジオール、オクタンジオール、ノナンジオール、デカンジオールなどの脂肪族ジオールまたはこれらの誘導体などをエポキシ化した2官能のもの、トリヒドロキシフェニルメタン骨格、アミノフェノール骨格を有する3官能のもの、フェノールノボラック樹脂、クレゾールノボラック樹脂、フェノールアラルキル樹脂、ビフェニルアラルキル樹脂、ナフトールアラルキル樹脂などをエポキシ化した多官能のものなどが挙げられるが、これらに限定されない。また樹脂組成物として室温で液状であることが好ましいので、(A)熱硬化性樹脂に係るエポキシ樹脂は、単独でまたは混合物として室温で液状のものが好ましい。ジオールまたはその誘導体をエポキシ化する方法としては、ジオールまたはその誘導体の2つの水酸基と、エピクロルヒドリンとを反応させて、グリシジルエーテルに変換することにより、エポキシ化する方法などが挙げられる。また、3官能以上のものについても、同様である。
通常行われるように反応性の希釈剤を使用することも可能である。反応性の希釈剤としては、フェニルグリシジルエーテル、ターシャリーブチルフェニルグリシジルエーテル、クレジルグリシジルエーテルなどの1官能の芳香族グリシジルエーテル類、脂肪族グリシジルエーテル類などが挙げられる。
(A)熱硬化性樹脂に係るエポキシ樹脂の硬化剤としては、例えば、脂肪族アミン、芳香族アミン、ジシアンジアミド、ジヒドラジド化合物、酸無水物、フェノール樹脂などが挙げられる。
エポキシ樹脂の硬化剤としての酸無水物としては、フタル酸無水物、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、4−メチルヘキサヒドロ無水フタル酸、エンドメチレンテトラヒドロフタル酸無水物、ドデセニルコハク酸無水物、無水マレイン酸などが挙げられる。
(A)熱硬化性樹脂に係るエポキシ樹脂の硬化剤としてのフェノール樹脂は1分子内にフェノール性水酸基を2つ以上有する化合物である。1分子内にフェノール性水酸基を1つ有する化合物の場合には架橋構造をとることができないため硬化物特性が悪化し使用できない。また、(A)熱硬化性樹脂に係るエポキシ樹脂の硬化剤としてのフェノール樹脂は、1分子内にフェノール性水酸基を2つ以上有していればよいが、1分子内にフェノール性水酸基を2以上5以下有することが好ましく、1分子内のフェノール性水酸基を2つまたは3つ有することがより好ましい。これより多い場合には分子量が大きくなりすぎるので樹脂ペーストの粘度が高くなりすぎるため好ましくない。このような化合物としては、ビスフェノールF、ビスフェノールA、ビスフェノールS、テトラメチルビスフェノールA、テトラメチルビスフェノールF、テトラメチルビスフェノールS、ジヒドロキシジフェニルエーテル、ジヒドロキシベンゾフェノン、テトラメチルビフェノール、エチリデンビスフェノール、メチルエチリデンビス(メチルフェノール)、シクロへキシリデンビスフェノール、ビフェノールなどのビスフェノール類およびその誘導体、トリ(ヒドロキシフェニル)メタン、トリ(ヒドロキシフェニル)エタンなどの3官能のフェノール類およびその誘導体、フェノールノボラック、クレゾールノボラックなどのフェノール類とホルムアルデヒドを反応することで得られる化合物で2核体または3核体がメインのものおよびその誘導体などが挙げられる。
以下に好ましいラジカル重合性の炭素−炭素二重結合を1分子内に2つ以上有する樹脂を例示するがこれらに限定されるわけではない。
これを満たす熱ラジカル重合開始剤の具体例としては、メチルエチルケトンパーオキサイド、メチルシクロヘキサノンパーオキサイド、メチルアセトアセテートパーオキサイド、アセチルアセトンパーオキサイド、1,1−ビス(t−ブチルパーオキシ)3,3,5−トリメチルシクロヘキサン、1,1−ビス(t−ヘキシルパーオキシ)シクロヘキサン、1,1−ビス(t−ヘキシルパーオキシ)3,3,5−トリメチルシクロヘキサン、1,1−ビス(t−ブチルパーオキシ)シクロヘキサン、2,2−ビス(4,4−ジ−t−ブチルパーオキシシクロヘキシル)プロパン、1,1−ビス(t−ブチルパーオキシ)シクロドデカン、n−ブチル4,4−ビス(t−ブチルパーオキシ)バレレート、2,2−ビス(t−ブチルパーオキシ)ブタン、1,1−ビス(t−ブチルパーオキシ)−2−メチルシクロヘキサン、t−ブチルハイドロパーオキサイド、P−メンタンハイドロパーオキサイド、1,1,3,3−テトラメチルブチルハイドロパーオキサイド、t−ヘキシルハイドロパーオキサイド、ジクミルパーオキサイド、2,5−ジメチル−2,5−ビス(t−ブチルパーオキシ)ヘキサン、α,α'−ビス(t−ブチルパーオキシ)ジイソプロピルベンゼン、t−ブチルクミルパーオキサイド、ジ−t−ブチルパーオキサイド、2,5−ジメチル−2,5−ビス(t−ブチルパーオキシ)−3−ヘキシン、イソブチリルパーオキサイド、3,5,5−トリメチルヘキサノイルパーオキサイド、オクタノイルパーオキサイド、ラウロイルパーオキサイド、桂皮酸パーオキサイド、m−トルオイルパーオキサイド、ベンゾイルパーオキサイド、ジイソプロピルパーオキシジカーボネート、ビス(4−t−ブチルシクロヘキシル)パーオキシジカーボネート、ジ−3−メトキシブチルパーオキシジカーボネート、ジ−2−エチルヘキシルパーオキシジカーボネート、ジ−sec−ブチルパーオキシジカーボネート、ジ(3−メチル−3−メトキシブチル)パーオキシジカーボネート、ジ(4−t−ブチルシクロヘキシル)パーオキシジカーボネート、α,α'−ビス(ネオデカノイルパーオキシ)ジイソプロピルベンゼン、クミルパーオキシネオデカノエート、1,1,3,3,−テトラメチルブチルパーオキシネオデカノエート、1−シクロヘキシル−1−メチルエチルパーオキシネオデカノエート、t−ヘキシルパーオキシネオデカノエート、t−ブチルパーオキシネオデカノエート、t−ヘキシルパーオキシピバレート、t−ブチルパーオキシピバレート、2,5−ジメチル−2,5−ビス(2−エチルヘキサノイルパーオキシ)ヘキサン、1,1,3,3−テトラメチルブチルパーオキシ−2−エチルへキサノエート、1−シクロヘキシル−1−メチルエチルパーオキシ−2−エチルヘキサノエート、t−ヘキシルパーオキシ−2−エチルヘキサノエート、t−ブチルパーオキシ−2−エチルヘキサノエート、t−ブチルパーオキシイソブチレート、t−ブチルパーオキシマレイックアシッド、t−ブチルパーオキシラウレート、t−ブチルパーオキシ−3,5,5−トリメチルヘキサノエート、t−ブチルパーオキシイソプロピルモノカーボネート、t−ブチルパーオキシ−2−エチルヘキシルモノカーボネート、2,5−ジメチル−2,5−ビス(ベンゾイルパーオキシ)ヘキサン、t−ブチルパーオキシアセテート、t−ヘキシルパーオキシベンゾエート、t−ブチルパーオキシ−m−トルオイルベンゾエート、t−ブチルパーオキシベンゾエート、ビス(t−ブチルパーオキシ)イソフタレート、t−ブチルパーオキシアリルモノカーボネート、3,3',4,4'−テトラ(t−ブチルパーオキシカルボニル)ベンゾフェノンなどが挙げられるが、これらは単独でまたは硬化性を制御するため2種類以上を混合して用いることもできる。また、上記のラジカル重合性の炭素−炭素二重結合を1分子内に2つ以上有する樹脂は、シアネート樹脂、エポキシ樹脂との併用も好ましい。
(B)金属粒子としては、形状が鱗片形状または楕円球形状であれば特に限定されないが、導電性や熱伝導性に優れるため、好ましくは銀粒子が挙げられる。また、銀以外には、例えば銅、金、ニッケル、パラジウム、アルミニウム、スズ、亜鉛などからなる金属粒子、またはこれら金属の合金粒子などから少なくとも1種以上を使用することができる。
ここで、銀粒子としては、銅、金、ニッケル、パラジウム、アルミニウム、スズ、亜鉛などからなる金属粒子の表面を銀で被覆した金属粒子を含む。
また、アスペクト比が上記上限を超えると、樹脂ペーストとして、マウント時の作業性が悪くなる可能性が生じるため、好ましくない。
ここで、(B)金属粒子のアスペクト比=(B)金属粒子の平均長径/(B)金属粒子の平均厚み、である。
(B)金属粒子の平均長径とは、フロー式粒子像分析装置による個数基準粒度分布における(B)金属粒子の1000個以上の平均長径で、(B)金属粒子の平均厚みとは、7mm×7mmのシリコンチップの上に、樹脂ペーストを適当量塗布し、その上に5mm×5mmのシリコンチップを樹脂ペースト層が約20μmになるようマウント後175℃、60分で硬化して、研磨により樹脂ペースト層の断面を出して、SEMにより(B)金属粒子50個の厚みを測定し、平均厚みとした。
(C)絶縁粒子としては、特に限定されないが、(B)金属粒子の配列に影響を与えるものであればどのようなものでも差し支えなく利用することができる。例えば、シリカ粒子やアルミナなどの無機フィラー、有機ポリマーなどの有機フィラーが挙げられる。
また、メジアン径d50が10μmを越えると塗布または硬化時に樹脂成分が流出しやすくなりブリードが発生するため好ましくない。また、メジアン径d50が10μm以下であると、(B)金属粒子を長軸が重力方向に対して平行になるようにより一層効率的に配列させることができる。
本実施形態における樹脂ペーストを用いて半導体装置10を作製する方法は、公知の方法を用いることができる。例えば、市販のダイボンダーを用いて、基材2の所定の部位に樹脂ペーストをディスペンス塗布した後、半導体素子3をマウントし、加熱硬化して接着層1を形成する。その後、ワイヤーボンディングして、エポキシ樹脂を用いて封止材層5を形成することによって半導体装置10を作製する。
(A)熱硬化性樹脂として、ビスフェノールF型エポキシ樹脂(日本化薬社製、RE−403S)と、ジアリルエステル樹脂(昭和電工社製、DA−101)を使用した。
硬化剤として、ジシアンジアミド(ADEKA社製、アデカハードナーEH−3636AS)を使用した。
硬化促進剤として、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール(四国化成工業社製、キュアゾール2P4MHZ)を使用した。
重合開始剤として、1,1−ジ(t−ブチルパーオキシ)シクロヘキサン(日本油脂社製、パーヘキサC(S))を使用した。
エポキシ希釈剤として、ターシャリーブチルフェニルグリシジルエーテル(日本化薬社製、TGE−H)を使用した。
アクリル希釈剤として、エチレングリコールジメタクリレート(共栄社化学社製、ライトエステルEG)を使用した。
カップリング剤として、ビス(トリメトキシシリルプロピル)テトラスルフィド(ダイソー社製、カブラス4)を使用した。
(B)金属粒子として、銀粒子1(福田金属箔粉工業社製、AgC−GS、メジアン径d50:8.0μm、アスペクト比4.1、平均長径4.6μm)を使用した。
(B)金属粒子として,銀粒子2(徳力化学研究所社製、TC−101、メジアン径d50:8.0μm、アスペクト比16.4、平均長径4.6μm)を使用した。
(C)絶縁粒子として、シリカ粒子A(MRCユニテック社製、QS−4F2、メジアン径d50:4.2μm)、シリカ粒子B(アドマテックス社製、SO−E2−24C、メジアン径d50:0.6μm)、シリカ粒子C(日本アエロジル社製、R−805、メジアン径d50:0.05μm)、アルミナ粒子(マイクロン社製、DAW−10、メジアン径d50:10μm)、有機ポリマー(日本触媒社製、MA−1004、メジアン径d50:5μm)を使用した。
上記の成分を表1の割合で配合し、3本ロールを用いて混練し、真空チャンバーにて2mmHgで15分間脱泡することで樹脂ペーストをそれぞれ作製した。配合割合は重量部である。
(評価試験)
上記より得られた樹脂ペーストについて以下の評価試験をそれぞれ行なった。評価結果を表1に示す。
上記の樹脂ペースト作製直後に、E型粘度計(3°コーン)を用いて25℃、2.5rpmでの値を測定した。作製直後の粘度が10Pa・s以上50Pa・s以下の範囲内の場合を○とし、範囲外の場合を×とした。
接続抵抗を測定できるように、上記より得られた樹脂ペーストをAgメッキした銅フレームと銅フレームの間に挟みこみ、175℃オーブン中60分硬化した。硬化後、抵抗率測定装置を用いて、樹脂ペーストを挟み込んだサンプルの電気抵抗値を測定し、接続距離と接続面積より、垂直(厚さ)方向の体積抵抗率を算出した。垂直(厚さ)方向の体積抵抗率が、1.0×10-1Ω・cm以下のものを○とし、1.0×10-1Ω・cmを超えるものを×とした。
金属粒子および絶縁粒子が接着層中で占める体積を接着層全体の体積でそれぞれ割った値である体積含有率aおよびbを、下記式(1)および式(2)よりそれぞれ算出した。
体積含有率a=(金属粒子の占める体積)
/[(金属粒子の占める体積)+(絶縁粒子の占める体積)+(樹脂成分の占める体積)] (1)
体積含有率b=(絶縁粒子の占める体積)
/[(金属粒子の占める体積)+(絶縁粒子の占める体積)+(樹脂成分の占める体積)] (2)
ここで、樹脂成分とは、接着層中の金属粒子および絶縁粒子以外の成分を表す。
また、樹脂成分の占める体積は、金属粒子および絶縁粒子以外の重量と比重から算出した。具体的には、樹脂成分の比重は、フィラー成分を含まない樹脂ペーストによって接着層を作製し、その接着層の比重を浮力式密度比重計で測定し,樹脂成分の比重として用いた。また、金属粒子の占める体積と絶縁粒子の占める体積も同様に重量と比重から算出した。金属粒子と絶縁粒子の真比重は、公知文献を参考にした。
2 基材
3 半導体素子
4 リード
5 封止材層
6 ボンディングワイヤ
7 パッド
10 半導体装置
Claims (13)
- 基材と、半導体素子とを接着する液状の熱硬化性樹脂組成物であって、
前記熱硬化性樹脂組成物は熱硬化性樹脂を含有し、その熱硬化性樹脂中に、金属粒子および絶縁粒子が分散しており、
前記金属粒子は鱗片形状または楕円球形状を有し、
前記熱硬化性樹脂中の前記金属粒子の体積含有率をaとし、前記熱硬化性樹脂中の前記絶縁粒子の体積含有率をbとしたとき、
前記熱硬化性樹脂中のフィラーの体積含有率(a+b)が、0.20以上0.50以下であり、
前記フィラー中の前記金属粒子の体積含有率a/(a+b)が、0.03以上0.70以下であり、
前記絶縁粒子のレーザー回折散乱式粒度分布測定法による個数標準粒度分布におけるメジアン径d50が3μm以上8μm以下である、熱硬化性樹脂組成物。 - 請求項1に記載の熱硬化性樹脂組成物において、
フロー式粒子像分析装置による個数基準粒度分布における前記金属粒子の平均長径をD
としたとき、D×0.1<d50<D×2、である熱硬化性樹脂組成物。 - 請求項1または2に記載の熱硬化性樹脂組成物において、
前記絶縁粒子が、シリカ粒子、およびアルミナから選ばれる一種以上を含む、熱硬化性樹脂組成物。 - 請求項1乃至3のいずれか一項に記載の熱硬化性樹脂組成物において、
前記金属粒子が、銀粒子を含む、熱硬化性樹脂組成物。 - 請求項4に記載の熱硬化性樹脂組成物において、
前記銀粒子が、銀で被覆した金属粒子を含む、熱硬化性樹脂組成物。 - 請求項1乃至5いずれか一項に記載の熱硬化性樹脂組成物において、
前記基材が、リードフレームまたはBGA基板である、熱硬化性樹脂組成物。 - 請求項1乃至6いずれか一項に記載の熱硬化性樹脂組成物において、
前記半導体素子が、消費電力1.7W以上のパワーデバイスである、熱硬化性樹脂組成物。 - 請求項1に記載の熱硬化性樹脂組成物において、
前記熱硬化性樹脂組成物が、硬化促進剤を含有し、
前記熱硬化性樹脂が、エポキシ樹脂を含有し、
前記硬化促進剤が、融点が180℃以上のイミダゾール化合物である、熱硬化性樹脂組成物。 - 請求項1に記載の熱硬化性樹脂組成物において、
前記熱硬化性樹脂が、分子量が500以上かつ50,000以下である、ラジカル重合性の炭素−炭素二重結合を1分子内に2つ以上有する樹脂を含有する、熱硬化性樹脂組成物。 - 請求項1に記載の熱硬化性樹脂組成物において、
前記熱硬化性樹脂組成物が、熱ラジカル重合開始剤を含有し、
前記熱硬化性樹脂が、分子量が500以上かつ50,000以下である、ラジカル重合性の炭素−炭素二重結合を1分子内に2つ以上有する樹脂を含有し、
前記熱ラジカル重合開始剤の、試料1gを電熱板の上にのせ、4℃/分で昇温した時における分解温度が40℃以上140℃以下である、熱硬化性樹脂組成物。 - 請求項1に記載の熱硬化性樹脂組成物において、
前記絶縁粒子が、窒化アルミニウム、および炭酸カルシウムから選択される1種以上である、熱硬化性樹脂組成物。 - 請求項1に記載の熱硬化性樹脂組成物において、
粘度が10Pa・s以上50Pa・s以下である熱硬化性樹脂組成物。 - 基材と、半導体素子と、前記基材と前記半導体素子の間に介在し、両者を接着する接着層とを具備する半導体装置であって、
前記接着層が、請求項1記載の熱硬化性樹脂組成物で形成されていることを特徴とする半導体装置。
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KR20160033996A (ko) * | 2014-09-19 | 2016-03-29 | 삼성전기주식회사 | 무선 충전용 복합시트 및 이의 제조방법 |
WO2016171623A1 (en) * | 2015-04-20 | 2016-10-27 | Agency For Science, Technology And Research | Conductive polymer composite as plastic solder |
JP6706818B2 (ja) * | 2016-06-30 | 2020-06-10 | 国立大学法人大阪大学 | 半導体装置 |
WO2018034234A1 (ja) * | 2016-08-19 | 2018-02-22 | 住友ベークライト株式会社 | ダイアタッチペーストおよび半導体装置 |
CN109790424B (zh) * | 2016-09-23 | 2020-12-08 | E.I.内穆尔杜邦公司 | 导电粘合剂 |
JP7046605B2 (ja) * | 2016-10-06 | 2022-04-04 | 積水化学工業株式会社 | 導電材料、接続構造体及び接続構造体の製造方法 |
JP6888401B2 (ja) * | 2017-04-28 | 2021-06-16 | 日亜化学工業株式会社 | 金属粉焼結ペースト及びその製造方法、ならびに導電性材料の製造方法 |
JP2020139020A (ja) * | 2019-02-27 | 2020-09-03 | ナミックス株式会社 | 導電性接着剤 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0623349B2 (ja) * | 1986-01-30 | 1994-03-30 | 富士高分子工業株式会社 | 異方導電性接着剤 |
DK54988A (da) * | 1987-11-25 | 1989-05-26 | Du Pont | Materiale til binding af integrerede kredsloeb til uorganiske, dielektriske underlag |
JPH0565456A (ja) * | 1991-09-09 | 1993-03-19 | Sumitomo Bakelite Co Ltd | 気密封止用樹脂ペースト |
JPH0589721A (ja) | 1991-09-30 | 1993-04-09 | Miyazaki Oki Electric Co Ltd | 導電性接着剤及びその導電性接着剤を使用した接着体 |
JP3407954B2 (ja) * | 1993-10-25 | 2003-05-19 | 住友ベークライト株式会社 | 導電性樹脂ペースト |
JP3408301B2 (ja) * | 1993-12-16 | 2003-05-19 | ミネソタ マイニング アンド マニュファクチャリング カンパニー | 異方性導電膜 |
US5686703A (en) * | 1994-12-16 | 1997-11-11 | Minnesota Mining And Manufacturing Company | Anisotropic, electrically conductive adhesive film |
JP2905121B2 (ja) * | 1995-07-19 | 1999-06-14 | ソニーケミカル株式会社 | 異方性導電接着フィルム |
JP4148754B2 (ja) * | 2002-11-08 | 2008-09-10 | 住友ベークライト株式会社 | 半導体用樹脂ペースト及び半導体装置 |
JP3991269B2 (ja) * | 2002-12-10 | 2007-10-17 | 日立化成工業株式会社 | 導電性ペースト及びそれを用いた半導体装置 |
JP2004304704A (ja) * | 2003-04-01 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 薄膜音響共振子、及び、薄膜音響共振子回路 |
SG151269A1 (en) * | 2004-03-19 | 2009-04-30 | Sumitomo Bakelite Co | Resin composition and semiconductor device produced by using the same |
JP2007149522A (ja) * | 2005-11-29 | 2007-06-14 | Sumitomo Metal Mining Co Ltd | 銀とカーボンナノチューブを含む導電性樹脂ペースト組成物およびこれを用いた半導体装置 |
US8241760B2 (en) * | 2006-09-14 | 2012-08-14 | Sumitomo Bakelite Company, Ltd. | Joint structure, joining method, wiring board and method for producing the same |
KR101078168B1 (ko) * | 2006-10-30 | 2011-10-28 | 스미토모 베이클리트 컴퍼니 리미티드 | 액상 수지 조성물, 접착제층 부착 반도체 웨이퍼, 접착제층 부착 반도체 소자, 반도체 패키지, 반도체 소자의 제조 방법 및 반도체 패키지의 제조 방법 |
KR101464008B1 (ko) * | 2006-12-05 | 2014-11-20 | 스미또모 베이크라이트 가부시키가이샤 | 반도체 패키지, 코어층 재료, 빌드업층 재료 및 시일링 수지 조성물 |
US8119040B2 (en) * | 2008-09-29 | 2012-02-21 | Rockwell Collins, Inc. | Glass thick film embedded passive material |
JP5332464B2 (ja) * | 2008-09-30 | 2013-11-06 | 住友ベークライト株式会社 | 樹脂組成物および樹脂組成物を使用して作製した半導体装置 |
WO2010052871A1 (ja) * | 2008-11-06 | 2010-05-14 | 住友ベークライト株式会社 | 電子装置の製造方法および電子装置 |
JP5342910B2 (ja) * | 2009-03-31 | 2013-11-13 | 三井化学株式会社 | 導電ペースト組成物および焼成体 |
JP5611537B2 (ja) * | 2009-04-28 | 2014-10-22 | 日立化成株式会社 | 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置 |
US8637379B2 (en) * | 2009-10-08 | 2014-01-28 | Infineon Technologies Ag | Device including a semiconductor chip and a carrier and fabrication method |
JP2011179101A (ja) * | 2010-03-04 | 2011-09-15 | Autonetworks Technologies Ltd | 防食剤、端子付き被覆電線およびワイヤーハーネス |
WO2011118147A1 (ja) * | 2010-03-25 | 2011-09-29 | 住友ベークライト株式会社 | 固形レゾール型フェノール樹脂およびその製造方法 |
TWI608062B (zh) * | 2011-05-31 | 2017-12-11 | 住友電木股份有限公司 | 樹脂組成物、使用它之半導體裝置及半導體裝置之製造方法 |
JP6015131B2 (ja) * | 2012-05-29 | 2016-10-26 | 住友ベークライト株式会社 | 樹脂組成物、それを用いた半導体装置 |
JP6111535B2 (ja) * | 2012-05-31 | 2017-04-12 | 住友ベークライト株式会社 | 熱硬化性樹脂組成物、半導体装置および半導体装置の製造方法 |
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---|---|---|---|---|
JP7273302B2 (ja) | 2019-07-29 | 2023-05-15 | 株式会社ノーリツ | 給湯装置 |
Also Published As
Publication number | Publication date |
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CN103608907B (zh) | 2017-03-29 |
TW201250711A (en) | 2012-12-16 |
JPWO2012165416A1 (ja) | 2015-02-23 |
TWI540590B (zh) | 2016-07-01 |
KR101912573B1 (ko) | 2018-10-29 |
WO2012165416A1 (ja) | 2012-12-06 |
EP2717301A4 (en) | 2015-04-01 |
CN103608907A (zh) | 2014-02-26 |
US20140183715A1 (en) | 2014-07-03 |
EP2717301A1 (en) | 2014-04-09 |
KR20140027305A (ko) | 2014-03-06 |
KR101969278B1 (ko) | 2019-04-15 |
SG194956A1 (en) | 2013-12-30 |
KR20180118802A (ko) | 2018-10-31 |
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