CN103608907A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN103608907A
CN103608907A CN201280026102.XA CN201280026102A CN103608907A CN 103608907 A CN103608907 A CN 103608907A CN 201280026102 A CN201280026102 A CN 201280026102A CN 103608907 A CN103608907 A CN 103608907A
Authority
CN
China
Prior art keywords
methyl
metallic particles
adhesive linkage
semiconductor device
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201280026102.XA
Other languages
English (en)
Other versions
CN103608907B (zh
Inventor
金森直哉
原田隆博
青木千晶
村山龙一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Publication of CN103608907A publication Critical patent/CN103608907A/zh
Application granted granted Critical
Publication of CN103608907B publication Critical patent/CN103608907B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29318—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29324—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29439—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Conductive Materials (AREA)

Abstract

根据本发明，提供导电性良好的半导体装置。本发明的半导体装置（10）具备：基材（2）；半导体元件（3）；和介于基材（2）与半导体元件（3）之间，将两者粘接的粘接层（1）。该半导体装置（10），在粘接层（1）中分散有金属颗粒和绝缘颗粒，金属颗粒具有鳞片形状或椭球形状。在将粘接层（1）中的金属颗粒的体积含有率设为a，并将粘接层（1）中的绝缘颗粒的体积含有率设为b时，粘接层（1）中的填料的体积含有率（a＋b）为0.20以上0.50以下，填料中的金属颗粒的体积含有率a/（a＋b）为0.03以上0.70以下。

Description

半导体装置
技术领域
本发明涉及使用树脂膏制作的半导体装置。
本申请基于2011年5月31日在日本申请的特愿2011-121444号主张优先权，在此援用其内容。
背景技术
在半导体装置中，半导体元件通过粘接层固定在引线框或基板等基材上。这样的粘接层，除了要求具有粘接性以外，还要求具有导电性和热传导性，已知能够利用含有银颗粒的树脂膏形成这样的粘接层。例如，在专利文献1、2中记载有利用含有银颗粒的树脂膏形成上述的粘接层。
现有技术文献
专利文献
专利文献1：日本特开平7-118616号公报
专利文献2：日本特开平5-89721号公报
发明内容
发明要解决的技术问题
但是，这样的树脂膏，为了得到期望的导电性和热传导性，需要大量含有银颗粒。银颗粒与树脂成分相比，比重大，因此，在使用中和放置中容易产生沉降。因此，大量含有银颗粒的树脂膏，涂敷操作性差，有不能稳定地得到具有期望的导电性和热传导性的粘接层的情况。
在专利文献1中，使在热固性树脂中分散有银颗粒的树脂膏含有平均粒径0.1～1.0μm的球状二氧化硅，由此能够抑制银颗粒的沉降。但是，球状二氧化硅是绝缘性的，因此，当使粘接层含有球状二氧化硅时，有导电性恶化的情况。
另外，在专利文献2中，使在热固性树脂中分散有银颗粒的树脂膏，含有被控制为与粘接层的膜厚大致相同的粒径、并且分布宽度小的球状二氧化硅，由此能够将粘接层控制为一定的膜厚。但是，与专利文献1同样，球状二氧化硅是绝缘性的，因此，当使粘接层含有球状二氧化硅时，有导电性恶化的情况。
本发明是鉴于上述的技术问题而做出的，其技术问题是提供导电性良好的半导体装置。
用于解决技术问题的手段
本发明人鉴于上述情况进行了潜心研究，结果发现满足以下条件的粘接层表现出良好的导电性，从而完成了本发明。
即，根据本发明，提供一种半导体装置，其具备：
基材；
半导体元件；和
介于上述基材与上述半导体元件之间，将两者粘接的粘接层，
在上述粘接层中分散有金属颗粒和绝缘颗粒，
上述金属颗粒具有鳞片形状或椭球形状，
在将上述粘接层中的上述金属颗粒的体积含有率设为a，并将上述粘接层中的上述绝缘颗粒的体积含有率设为b时，
上述粘接层中的填料的体积含有率（a＋b）为0.20以上0.50以下，
上述填料中的上述金属颗粒的体积含有率a/（a＋b）为0.03以上0.70以下。
满足上述条件的粘接层表现出良好的导电性的理由不一定清楚，但是可认为是以下的理由。当粘接层中的填料的体积含有率（a＋b）为上述范围内时，粘接层表面的平滑性优异，因此粘接层与基材或半导体元件的接触电阻变小，粘接层的界面的导电性提高。
另外，当填料中的金属颗粒的体积含有率a/（a＋b）为上述范围内时，产生绝缘颗粒的部分集合体，由于该集合体，鳞片形状或椭球形状的金属颗粒的长轴相对于重力方向平行地排列。另外，在没有该集合体的部分，金属颗粒相对于重力方向垂直地排列。因此，利用绝缘颗粒的集合体，形成金属颗粒的垂直方向与水平方向的接触部分。因此，可推测在粘接层满足上述条件时，在粘接层的膜厚方向能够实现良好的导电性。
发明效果
根据本发明，能够提供导电性良好的半导体装置。
附图说明
图1为表示本实施方式的半导体装置的结构的剖面图。
具体实施方式
以下，使用附图对本发明的实施方式进行说明。此外，在所有的附图中，对同样的构成要素标注同样的符号，适当省略说明。
（半导体装置）
首先，对本实施方式的半导体装置的结构进行说明。图1为表示本实施方式的半导体装置10的结构的剖面图。
本实施方式的半导体装置10具备：基材2；半导体元件3；和介于基材2与半导体元件3之间，将两者粘接的粘接层1。
粘接层1通过将含有鳞片形状或椭球形状的金属颗粒、和绝缘颗粒的膏状的树脂组合物（以下也称为树脂膏）利用半导体元件3和基材2压接而形成，在得到的粘接层1中，分散有鳞片形状或椭球形状的金属颗粒、和绝缘颗粒。
本实施方式的粘接层1，在将粘接层1中的金属颗粒的体积含有率设为a，将绝缘颗粒的体积含有率设为b时，填料的体积含有率（a＋b）为0.20以上0.50以下，优选为0.25以上0.45以下，进一步优选为0.30以上0.40以下。在此，粘接层1中的填料表示金属颗粒和绝缘颗粒。当为该下限值以上时，粘接层1中的填料在膜厚方向上的不均匀被抑制，粘接层1与基材2或半导体元件3的接触电阻变小。
另外，当为该上限值以下时，粘接层1界面的平滑性优异，粘接层1与基材2或半导体元件3的接触电阻变小。
另外，本实施方式的粘接层1，填料中的金属颗粒的体积含有率a/（a＋b）为0.03以上0.70以下，优选为0.05以上0.65以下，进一步优选为0.10以上0.60以下。当为该下限值以上时，在膜厚方向能够形成金属颗粒的导电网。
另外，当为该上限值以下时，产生绝缘颗粒的部分集合体，由于该集合体，鳞片形状或椭球形状的金属颗粒的长轴相对于重力方向平行地排列。另外，在没有该集合体的部分，金属颗粒相对于重力方向垂直地排列。因此，利用绝缘颗粒的集合体，形成金属颗粒的垂直方向与水平方向的接触部分，在粘接层1的膜厚方向能够高效率地形成导电网。
因此，满足上述条件的粘接层1在粘接层的膜厚方向能够实现良好的导电性。
体积含有率a和b分别为金属颗粒和绝缘颗粒在粘接层1中所占的体积除以整个粘接层的体积而得到的值，分别由下述式（1）和式（2）算出。
体积含有率a＝（金属颗粒所占的体积）
/［（金属颗粒所占的体积）＋（绝缘颗粒所占的体积）＋（树脂成分所占的体积）］     （1）
体积含有率b＝（绝缘颗粒所占的体积）
/［（金属颗粒所占的体积）＋（绝缘颗粒所占的体积）＋（树脂成分所占的体积）］     （2）
在此，树脂成分表示粘接层1中的除了金属颗粒和绝缘颗粒以外的成分。
树脂成分所占的体积，根据除了金属颗粒和绝缘颗粒以外的重量和比重算出。关于树脂成分的比重，利用不含填料的树脂膏制作粘接层，将该粘接层的比重作为树脂成分的比重使用。另外，金属颗粒所占的体积和绝缘颗粒所占的体积也同样根据重量和真比重算出。
在此，粘接层树脂成分的比重能够利用浮力式密度比重计测定。另外，金属颗粒和绝缘颗粒的真比重能够使用公知文献的值。但是，在金属颗粒和绝缘颗粒的真比重在公知文献中没有记载的情况下，例如，能够与比重已知的液体混合，利用振动式密度比重计测定混合物的比重，计算其重量与体积的关系，算出金属颗粒和绝缘颗粒的真比重。
粘接层1的厚度没有特别限定，优选为5μm以上50μm以下，更优选为10μm以上40μm以下。通过使粘接层1的厚度为下限值以上，能够进一步发挥粘接强度。另外，通过使粘接层1的厚度为上限值以下，能够使导电性和热传导性进一步提高。
基材2没有特别限定，可以列举：42合金引线框、铜引线框等引线框；玻璃环氧基板（由玻璃纤维强化环氧树脂构成的基板）、BT基板（使用由氰酸酯单体及其低聚物与双马来酰亚胺构成的BT树脂的基板）等有机基板；其他半导体元件；半导体晶片；间隔物等。其中，优选能够更加有效地发挥粘接层1的导电性和热传导性的引线框、有机基板。进一步优选有机基板为BGA（Ball Grid Array：球栅阵列）基板。
半导体元件3没有特别限定，例如，优选为能够更加有效地发挥粘接层1的导电性和热传导性的耗电功率1.7W以上的功率器件。半导体元件3经由焊盘7和接合线6，与引线4电连接。另外，半导体元件3的周围由密封材料层5密封。
（树脂膏）
接着，对形成粘接层1的树脂膏进行说明。本实施方式的树脂膏含有（A）热固性树脂、（B）金属颗粒、和（C）绝缘颗粒。
（热固性树脂）
（A）热固性树脂为通过加热形成三维网状结构的一般的热固性树脂。该（A）热固性树脂没有特别限定，优选为形成液态树脂组合物的材料，优选在室温为液态。例如，可以列举氰酸酯树脂、环氧树脂、在1个分子内具有2个以上的自由基聚合性的碳-碳双键的树脂等。
（A）热固性树脂涉及的氰酸酯树脂是分子内具有-NCO基的化合物，是-NCO基通过加热发生反应而形成三维网状结构并固化的树脂，是进行固化的多官能氰酸酯化合物或其低分子聚合物。作为（A）热固性树脂涉及的氰酸酯树脂，没有特别限定，例如可以列举1,3-二氰酰基苯、1,4-二氰酰基苯、1,3,5-三氰酰基苯、1,3-二氰酰基萘、1,4-二氰酰基萘、1,6-二氰酰基萘、1,8-二氰酰基萘、2,6-二氰酰基萘、2,7-二氰酰基萘、1,3,6-三氰酰基萘、4,4’-二氰酰基联苯、双（4-氰酰基苯基）甲烷、双（3,5-二甲基-4-氰酰基苯基）甲烷、2,2-双（4-氰酰基苯基）丙烷、2,2-双（3,5-二溴-4-氰酰基苯基）丙烷、双（4-氰酰基苯基）醚、双（4-氰酰基苯基）硫醚、双（4-氰酰基苯基）砜、三（4-氰酰基苯基）亚磷酸酯、三（4-氰酰基苯基）磷酸酯等反应物、和通过线型酚醛树脂与卤化氰的反应得到的氰酸酯类等，还可以列举将这些多官能氰酸酯树脂的氰酸酯基三聚化而形成的具有三嗪环的预聚物。该预聚物能够通过例如将无机酸、路易斯酸等酸、醇钠、叔胺类等碱、碳酸钠等盐类作为催化剂使上述的多官能氰酸酯树脂单体聚合而得到。
作为（A）热固性树脂涉及的氰酸酯树脂的固化促进剂，可以列举一般公知的固化促进剂。例如，可以列举：辛酸锌、辛酸锡、环烷酸钴、环烷酸锌、乙酰丙酮铁等有机金属配位化合物；氯化铝、氯化锡、氯化锌等金属盐；和三乙胺、二甲基苄胺等胺类，但是并不限定于这些。这些固化促进剂可以单独使用1种或者并用2种以上。
另外，也能够将氰酸酯树脂与环氧树脂、氧杂环丁烷树脂、在1个分子内具有2个以上的自由基聚合性的碳-碳双键的树脂等其他树脂并用。
（A）热固性树脂涉及的环氧树脂是分子内具有1个以上的缩水甘油基的化合物，是缩水甘油基通过加热发生反应而形成三维网状结构并固化的化合物。在（A）热固性树脂涉及的环氧树脂中，优选在1个分子中含有2个以上的缩水甘油基，这是因为仅是缩水甘油基为1个的化合物的情况下即使反应也不能显示充分的固化物特性。
作为（A）热固性树脂涉及的环氧树脂中的、在1个分子中含有2个以上的缩水甘油基的化合物，可以列举：将双酚A、双酚F、联苯酚等双酚化合物或它们的衍生物，氢化双酚A、氢化双酚F、氢化联苯酚、环己二醇、环己烷二甲醇、环己烷二乙醇等具有脂环结构的二醇或它们的衍生物，丁二醇、己二醇、辛二醇、壬二醇、癸二醇等脂肪族二醇或它们的衍生物等进行环氧化而得到的2官能的化合物；具有三羟基苯基甲烷骨架或氨基苯酚骨架的3官能的化合物；将苯酚酚醛树脂、甲酚酚醛树脂、苯酚芳烷基树脂、联苯芳烷基树脂、萘酚芳烷基树脂等进行环氧化而得到的多官能的化合物等，但是并不限定于这些。另外，作为树脂组合物，优选在室温为液态，因此，（A）热固性树脂涉及的环氧树脂，优选单独在室温为液态的物质或作为混合物在室温为液态的物质。作为将二醇或其衍生物进行环氧化的方法，可以列举：使二醇或其衍生物的2个羟基与环氧氯丙烷反应，转化为缩水甘油醚，由此进行环氧化的方法等。另外，对于3官能以上的化合物，也是同样。
也能够像通常进行的那样使用反应性的稀释剂。作为反应性的稀释剂，可以列举苯基缩水甘油醚、叔丁基苯基缩水甘油醚、甲苯基缩水甘油醚等1官能的芳香族缩水甘油醚类、脂肪族缩水甘油醚类等。
作为（A）热固性树脂，在使用上述（A）热固性树脂涉及的环氧树脂的情况下，为了使环氧树脂固化，本实施方式的树脂膏包含固化剂。
作为（A）热固性树脂涉及的环氧树脂的固化剂，例如，可以列举脂肪族胺、芳香族胺、双氰胺、二酰肼化合物、酸酐、酚树脂等。
作为（A）热固性树脂涉及的环氧树脂的固化剂的二酰肼化合物，可以列举己二酸二酰肼、十二烷酸二酰肼、间苯二甲酸二酰肼、对羟基苯甲酸二酰肼等羧酸二酰肼等。
作为环氧树脂的固化剂的酸酐，可以列举邻苯二甲酸酐、四氢邻苯二甲酸酐、六氢邻苯二甲酸酐、4-甲基六氢邻苯二甲酸酐、内亚甲基四氢邻苯二甲酸酐、十二碳烯基琥珀酸酐、马来酸酐等。
作为（A）热固性树脂涉及的环氧树脂的固化剂的酚树脂，是在1个分子内具有2个以上的酚性羟基的化合物。在1个分子内具有1个酚性羟基的化合物的情况下，不能形成交联结构，因此，固化物特性恶化，不能使用。另外，作为（A）热固性树脂涉及的环氧树脂的固化剂的酚树脂，只要在1个分子内具有2个以上的酚性羟基即可，优选在1个分子内具有2个以上5个以下的酚性羟基，更优选在1个分子内具有2个或3个酚性羟基。在1个分子内的酚性羟基的数量比其多的情况下，分子量变得过大，因此，树脂膏的粘度变得过高，因此不优选。作为这样的化合物，可以列举：双酚F、双酚A、双酚S、四甲基双酚A、四甲基双酚F、四甲基双酚S、二羟基二苯基醚、二羟基二苯甲酮、四甲基联苯酚、亚乙基双酚、甲基亚乙基双（甲基苯酚）、亚环己基双酚、联苯酚等双酚类及其衍生物；三（羟基苯基）甲烷、三（羟基苯基）乙烷等3官能的酚类及其衍生物；苯酚酚醛树脂、甲酚酚醛树脂等由酚类与甲醛反应得到的、以2核体或3核体为主的化合物及其衍生物等。
作为（A）热固性树脂涉及的环氧树脂的固化促进剂，可以列举咪唑类、三苯基膦或四苯基鏻的盐类、二氮杂双环十一碳烯等胺类化合物及其盐类等，优选2-甲基咪唑、2-乙基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4-甲基-5-羟甲基咪唑、2-苯基-4,5-二羟甲基咪唑、2-C11H23-咪唑、以及2-甲基咪唑与2,4-二氨基-6-乙烯基三嗪的加成物等咪唑化合物。其中，特别优选的是熔点为180℃以上的咪唑化合物。另外，环氧树脂也优选与氰酸酯树脂、在1个分子内具有2个以上的自由基聚合性的碳-碳双键的树脂并用。
（A）热固性树脂涉及的在1个分子内具有2个以上的自由基聚合性的碳-碳双键的树脂，是分子内具有碳-碳双键的化合物，是碳-碳双键发生反应而形成三维网状结构并固化的树脂。
在（A）热固性树脂涉及的在1个分子内具有2个以上的自由基聚合性的碳-碳双键的树脂中，（A）的分子量优选为500以上50000以下。这是因为：在（A）的分子量小于上述范围的情况下，粘接层的弹性模量变得过高，在（A）的分子量大于上述范围的情况下，树脂膏的粘度变得过高。
以下例示优选的在1个分子内具有2个以上的自由基聚合性的碳-碳双键的树脂，但是并不限定于这些。
作为在1个分子内具有2个以上的丙烯酰基的化合物，优选的是分子量为500以上50000以下的聚醚、聚酯、聚碳酸酯、聚（甲基）丙烯酸酯、聚丁二烯、丁二烯丙烯腈共聚物且在1个分子内具有2个以上的丙烯酰基的化合物。
作为聚醚，优选碳原子数3～6的有机基团经由醚键重复而得到的聚醚，优选不含芳香族环的聚醚。这是因为：在含有芳香族环的情况下，作为在1个分子内具有2个以上的丙烯酰基的化合物，变成固态或者高粘度，而且在形成为固化物的情况下的弹性模量变得过高。另外，在1个分子内具有2个以上的丙烯酰基的化合物的分子量，如上所述优选为500以上50000以下，更优选为500以上5000以下，特别优选为500以上2000以下。这是因为：当分子量在上述范围时，能得到操作性良好、且弹性模量低的粘接层。这样的在1个分子内具有2个以上的丙烯酰基的聚醚化合物，能够通过聚醚多元醇与（甲基）丙烯酸及其衍生物的反应而得到。
作为聚酯，优选碳原子数3～6的有机基团经由酯键重复而得到的聚酯，优选不含芳香族环的聚酯。这是因为：在含有芳香族环的情况下，作为在1个分子内具有2个以上的丙烯酰基的化合物，变成固态或者高粘度，而且在形成为固化物的情况下的弹性模量变得过高。另外，在1个分子内具有2个以上的丙烯酰基的化合物的分子量，如上所述优选为500以上50000以下，更优选为500以上5000以下，特别优选为500以上2000以下。这是因为：当分子量在上述范围时，能得到操作性良好、且弹性模量低的粘接层。这样的在1个分子内具有2个以上的丙烯酰基的聚酯化合物，能够通过聚酯多元醇与（甲基）丙烯酸及其衍生物的反应而得到。
作为聚碳酸酯，优选碳原子数3～6的有机基团经由碳酸酯键重复而得到的聚碳酸酯，优选不含芳香族环的聚碳酸酯。这是因为：在含有芳香族环的情况下，作为在1个分子内具有2个以上的丙烯酰基的化合物，变成固态或者高粘度，而且在形成为固化物的情况下的弹性模量变得过高。另外，在1个分子内具有2个以上的丙烯酰基的化合物的分子量，如上所述优选为500以上50000以下，更优选为500以上5000以下，特别优选为500以上2000以下。这是因为：当分子量在该范围时，能得到操作性良好、且弹性模量低的粘接层。这样的在1个分子内具有2个以上的丙烯酰基的聚碳酸酯化合物，能够通过聚碳酸酯多元醇与（甲基）丙烯酸及其衍生物的反应而得到。
作为聚（甲基）丙烯酸酯，优选（甲基）丙烯酸与（甲基）丙烯酸酯的共聚物或具有羟基的（甲基）丙烯酸酯与不具有极性基团的（甲基）丙烯酸酯的共聚物、具有缩水甘油基的（甲基）丙烯酸酯与不具有极性基团的（甲基）丙烯酸酯的共聚物等。另外，在1个分子内具有2个以上的丙烯酰基的化合物的分子量，如上所述优选为500以上50000以下，更优选为500以上25000以下。这是因为：当分子量在该范围时，能得到操作性良好、且弹性模量低的粘接层。这样的在1个分子内具有2个以上的丙烯酰基的（甲基）丙烯酸酯化合物，在具有羧基的共聚物的情况下，能够通过与具有羟基的（甲基）丙烯酸酯或者具有缩水甘油基的（甲基）丙烯酸酯反应而得到，在具有羟基的共聚物的情况下，能够通过与（甲基）丙烯酸及其衍生物反应而得到，在具有缩水甘油基的共聚物的情况下，能够通过与（甲基）丙烯酸及其衍生物反应而得到。
作为聚丁二烯，能够通过具有羧基的聚丁二烯与具有羟基的（甲基）丙烯酸酯或具有缩水甘油基的（甲基）丙烯酸酯的反应、具有羟基的聚丁二烯与（甲基）丙烯酸及其衍生物的反应而得到，另外，也能够通过加成有马来酸酐的聚丁二烯与具有羟基的（甲基）丙烯酸酯的反应而得到。
作为丁二烯丙烯腈共聚物，能够通过具有羧基的丁二烯丙烯腈共聚物与具有羟基的（甲基）丙烯酸酯或具有缩水甘油基的（甲基）丙烯酸酯的反应而得到。
作为在1个分子内具有2个以上的烯丙基的化合物，优选的是分子量为500以上50000以下的聚醚、聚酯、聚碳酸酯、聚丙烯酸酯、聚甲基丙烯酸酯、聚丁二烯、丁二烯丙烯腈共聚物且具有烯丙基的化合物，例如为乙二酸、丙二酸、丁二酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、马来酸、富马酸、邻苯二甲酸、四氢邻苯二甲酸、六氢邻苯二甲酸以及它们的衍生物等二羧酸及其衍生物和烯丙醇反应而得到的二烯丙酯化合物与乙二醇、丙二醇、1,4-丁二醇等二醇的反应物等。
作为在1个分子内具有2个以上的马来酰亚胺基的化合物，优选的例如可以列举N,N’-（4,4’-二苯基甲烷）双马来酰亚胺、双（3-乙基-5-甲基-4-马来酰亚胺苯基）甲烷、2,2-双［4-（4-马来酰亚胺苯氧基）苯基］丙烷等双马来酰亚胺化合物。更优选的是：通过二聚酸二胺与马来酸酐的反应得到的化合物；通过马来酰亚胺乙酸、马来酰亚胺己酸等马来酰亚胺化氨基酸与多元醇的反应得到的化合物。马来酰亚胺化氨基酸通过使马来酸酐与氨基乙酸或氨基己酸反应而得到，作为多元醇，优选聚醚多元醇、聚酯多元醇、聚碳酸酯多元醇、聚丙烯酸酯多元醇、聚甲基丙烯酸酯多元醇，特别优选不含芳香族环。这是因为：在含有芳香族环的情况下，作为在1个分子内具有2个以上的马来酰亚胺基的化合物，变成固态或者高粘度，而且在形成为固化物的情况下的弹性模量变得过高。
另外，为了调整本实施方式的树脂膏的各项特性，也能够在不损害（A）热固性树脂的效果的范围内使用以下的化合物。例如，可以列举：（甲基）丙烯酸-2-羟乙酯、（甲基）丙烯酸-2-羟丙酯、（甲基）丙烯酸-3-羟丙酯、（甲基）丙烯酸-2-羟丁酯、（甲基）丙烯酸-3-羟丁酯、（甲基）丙烯酸-4-羟丁酯、丙三醇单（甲基）丙烯酸酯、丙三醇二（甲基）丙烯酸酯、三羟甲基丙烷单（甲基）丙烯酸酯、三羟甲基丙烷二（甲基）丙烯酸酯、季戊四醇单（甲基）丙烯酸酯、季戊四醇二（甲基）丙烯酸酯、季戊四醇三（甲基）丙烯酸酯、新戊二醇单（甲基）丙烯酸酯等具有羟基的（甲基）丙烯酸酯或使这些具有羟基的（甲基）丙烯酸酯与二羧酸或其衍生物反应而得到的具有羧基的（甲基）丙烯酸酯等。在此作为能够使用的二羧酸，例如，可以列举乙二酸、丙二酸、丁二酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、马来酸、富马酸、邻苯二甲酸、四氢邻苯二甲酸、六氢邻苯二甲酸和它们的衍生物。
除上述以外，也能够使用（甲基）丙烯酸甲酯、（甲基）丙烯酸乙酯、（甲基）丙烯酸正丁酯、（甲基）丙烯酸异丁酯、（甲基）丙烯酸叔丁酯、（甲基）丙烯酸异癸酯、（甲基）丙烯酸月桂酯、（甲基）丙烯酸十三烷基酯、（甲基）丙烯酸-2-乙基己酯、其他的（甲基）丙烯酸烷基酯、（甲基）丙烯酸苄酯、（甲基）丙烯酸苯氧基乙酯、（甲基）丙烯酸缩水甘油酯、三羟甲基丙烷三（甲基）丙烯酸酯、单（甲基）丙烯酸锌、二（甲基）丙烯酸锌、（甲基）丙烯酸二甲基氨基乙酯、（甲基）丙烯酸二乙基氨基乙酯、（甲基）丙烯酸新戊二醇酯、（甲基）丙烯酸三氟乙酯、（甲基）丙烯酸-2,2,3,3-四氟丙酯、（甲基）丙烯酸-2,2,3,3,4,4-六氟丁酯、（甲基）丙烯酸全氟辛酯、（甲基）丙烯酸全氟辛基乙酯、乙二醇二（甲基）丙烯酸酯、丙二醇二（甲基）丙烯酸酯、1,4-丁二醇二（甲基）丙烯酸酯、1,6-己二醇二（甲基）丙烯酸酯、1,9-壬二醇二（甲基）丙烯酸酯、1,3-丁二醇二（甲基）丙烯酸酯、1,10-癸二醇二（甲基）丙烯酸酯、1,4-丁二醇二（甲基）丙烯酸酯、（甲基）丙烯酸甲氧基乙酯、（甲基）丙烯酸丁氧基乙酯、乙氧基二乙二醇（甲基）丙烯酸酯、N,N’-亚甲基双（甲基）丙烯酰胺、N,N’-亚乙基双（甲基）丙烯酰胺、1,2-二（甲基）丙烯酰胺乙二醇、二（甲基）丙烯酰氧基甲基三环癸烷、N-（甲基）丙烯酰氧基乙基马来酰亚胺、N-（甲基）丙烯酰氧基乙基六氢邻苯二甲酰亚胺、N-（甲基）丙烯酰氧基乙基邻苯二甲酰亚胺、n-乙烯基-2-吡咯烷酮、苯乙烯衍生物、α-甲基苯乙烯衍生物等。
另外，作为（A）热固性树脂涉及的在1个分子内具有2个以上的自由基聚合性的碳-碳双键的树脂的聚合引发剂，优选使用热自由基聚合引发剂。只要是通常作为热自由基聚合引发剂使用的聚合引发剂就没有特别限定，作为优选的热自由基聚合引发剂，优选在快速加热试验（将1g试样放置在电热板上，以4℃/分钟升温时的分解开始温度）中分解温度为40℃以上140℃以下的热自由基聚合引发剂。当分解温度小于40℃时，树脂膏在常温的保存性变差，当分解温度超过140℃时，固化时间变得非常长，因此不优选。
作为满足上述条件的热自由基聚合引发剂的具体例子，可以列举过氧化甲乙酮、过氧化甲基环己酮、过氧化乙酰乙酸甲酯、过氧化乙酰丙酮、1,1-双（叔丁基过氧基）-3,3,5-三甲基环己烷、1,1-双（叔己基过氧基）环己烷、1,1-双（叔己基过氧基）-3,3,5-三甲基环己烷、1,1-双（叔丁基过氧基）环己烷、2,2-双（4,4-二叔丁基过氧化环己基）丙烷、1,1-双（叔丁基过氧基）环十二烷、4,4-双（叔丁基过氧基）戊酸正丁酯、2,2-双（叔丁基过氧基）丁烷、1,1-双（叔丁基过氧基）-2-甲基环己烷、叔丁基过氧化氢、萜烷过氧化氢、1,1,3,3-四甲基丁基过氧化氢、叔己基过氧化氢、过氧化二异丙苯、2,5-二甲基-2,5-双（叔丁基过氧基）己烷、α,α’-双（叔丁基过氧基）二异丙苯、叔丁基过氧化异丙苯、过氧化二叔丁基、2,5-二甲基-2,5-双（叔丁基过氧基）-3-己炔、过氧化异丁酰、过氧化3,5,5-三甲基己酰、过氧化辛酰、过氧化月桂酰、过氧化肉桂酸、过氧化间甲苯酰、过氧化苯甲酰、过氧化二碳酸二异丙酯、过氧化二碳酸双（4-叔丁基环己酯）、过氧化二碳酸二-3-甲氧基丁酯、过氧化二碳酸二-2-乙基己酯、过氧化二碳酸二仲丁酯、过氧化二碳酸二（3-甲基-3-甲氧基丁酯）、过氧化二碳酸二（4-叔丁基环己酯）、α,α’-双（新癸酰基过氧基）二异丙苯、过氧化新癸酸异丙苯酯、过氧化新癸酸-1,1,3,3-四甲基丁酯、过氧化新癸酸-1-环己基-1-甲基乙酯、过氧化新癸酸叔己酯、过氧化新癸酸叔丁酯、过氧化新戊酸叔己酯、过氧化新戊酸叔丁酯、2,5-二甲基-2,5-双（2-乙基己酰基过氧基）己烷、过氧化-2-乙基己酸-1,1,3,3-四甲基丁酯、过氧化-2-乙基己酸-1-环己基-1-甲基乙酯、过氧化-2-乙基己酸叔己酯、过氧化-2-乙基己酸叔丁酯、过氧化异丁酸叔丁酯、过氧化马来酸叔丁酯、过氧化月桂酸叔丁酯、过氧化-3,5,5-三甲基己酸叔丁酯、过氧化异丙基单碳酸叔丁酯、过氧化-2-乙基己基单碳酸叔丁酯、2,5-二甲基-2,5-双（苯甲酰基过氧基）己烷、过氧化乙酸叔丁酯、过氧化苯甲酸叔己酯、过氧化间甲苯酰苯甲酸叔丁酯、过氧化苯甲酸叔丁酯、双（叔丁基过氧基）间苯二甲酸酯、过氧化烯丙基单碳酸叔丁酯、3,3’,4,4’-四（叔丁基过氧化羰基）二苯甲酮等，这些能够单独使用，或者也能够为了控制固化性而将2种以上混合使用。另外，上述的在1个分子内具有2个以上的自由基聚合性的碳-碳双键的树脂也优选与氰酸酯树脂、环氧树脂并用。
（A）热固性树脂的配合量，相对于全部树脂膏100体积％为50体积％以上80体积％以下，优选为55体积％以上75体积％以下，进一步优选为60体积％以上70体积％以下。通过使（A）热固性树脂的配合量在该范围，树脂膏的操作性和耐热性等更加优异。
（金属颗粒）
作为（B）金属颗粒，只要形状为鳞片形状或椭球形状就没有特别限定，因为导电性和热传导性优异，所以优选列举银颗粒。另外，除了银以外，能够使用例如由铜、金、镍、钯、铝、锡、锌等形成的金属颗粒、和这些金属的合金颗粒等中的至少1种以上。
在此，作为银颗粒，包括将由铜、金、镍、钯、铝、锡、锌等形成的金属颗粒的表面用银包覆而得到的金属颗粒。
（B）金属颗粒的形状为鳞片形状或椭球形状。此外，椭球形状包括圆球形状。另外，当金属颗粒的形状为鳞片形状或椭球形状时，如上所述，通过绝缘颗粒，金属颗粒的长轴能够相对于重力方向平行地排列。另外，在没有绝缘颗粒的部分，金属颗粒能够相对于重力方向垂直地排列。
另外，（B）金属颗粒的宽高比没有特别限定，优选为1.0以上40.0以下，更优选为2.0以上40.0以下，进一步优选为4.0以上30.0以下。当宽高比为上述下限以上时，就（B）金属颗粒而言，（B）金属颗粒的长轴能够相对于重力方向更加平行地排列。
另外，当宽高比超过上述上限时，作为树脂膏，装配时的操作性有可能变差，因此不优选。
在此，（B）金属颗粒的宽高比＝（B）金属颗粒的平均长径/（B）金属颗粒的平均厚度。
（B）金属颗粒的平均长径，是指通过流动式颗粒图像分析装置得到的个数基准粒度分布中的1000个以上的（B）金属颗粒的平均长径，（B）金属颗粒的平均厚度是指：在7mm×7mm的硅芯片上涂敷适当量的树脂膏，在其上装配5mm×5mm的硅芯片使得树脂膏层成为约20μm，然后在175℃进行60分钟固化，通过研磨使树脂膏层的剖面露出，利用SEM测定50个（B）金属颗粒的厚度，取平均厚度。
另外，（B）金属颗粒的粒径根据需要的树脂膏的粘度而不同，通常优选金属颗粒的通过激光衍射散射式粒度分布测定法得到的个数基准粒度分布中的中位径d50为0.3μm以上20μm以下。在中位径d50小于0.3μm的情况下，粘度变高，当中位径d50超过20μm时，在涂敷或固化时树脂成分容易流出而发生渗出，因此不优选。另外，当中位径d50超过20μm时，在用分配器（dispenser）涂敷树脂膏时，有将针的出口堵塞而不能长时间连续使用的情况。
另外，使用的（B）金属颗粒，优选卤素离子、碱金属离子等离子性杂质的含量为10ppm以下。此外，本实施方式中使用的（B）金属颗粒，也可以使用预先将表面用烷氧基硅烷、酰氧基硅烷、硅氮烷、有机氨基硅烷等硅烷偶联剂等处理后的颗粒。
另外，（B）金属颗粒的配合量，相对于全部树脂膏100体积％，优选为0.6体积％以上35体积％以下，通过使（B）金属颗粒的配合量在该范围内，能够得到良好的热传导性和导电性，操作性也优异。在树脂膏中的（B）金属颗粒小于0.6体积％的情况下，（B）金属颗粒由（A）热固性树脂覆盖，有可能不能赋予（B）金属颗粒与重力方向平行的排列，当树脂膏中的（B）金属颗粒超过35体积％时，树脂膏的粘度变高，操作性降低，树脂膏的固化物变脆，因此，有可能耐焊接性降低，不优选。
（绝缘颗粒）
作为（C）绝缘颗粒，没有特别限定，只要是对（B）金属颗粒的排列产生影响的绝缘颗粒，无论什么都能够使用。例如，可以列举二氧化硅颗粒或氧化铝等无机填料、有机聚合物等有机填料。
（C）绝缘颗粒优选为能够使含有的（B）金属颗粒进行排列的颗粒，另外在用于半导体用途的情况下，进一步优选为粒径一致的颗粒。另外，（C）绝缘颗粒如果是用于对本实施方式的粘接层1赋予低热膨胀性、低吸湿率等，将粘接层1的厚度在固化后保持为一定的绝缘颗粒，则更优选。
另外，（C）绝缘颗粒的粒径根据需要的树脂膏的粘度而不同，通常，（C）绝缘颗粒的通过激光衍射散射式粒度分布测定法得到的个数基准粒度分布中的中位径d50优选为2μm以上10μm以下，进一步优选为3μm以上8μm以下，特别优选为3μm以上6μm以下。在中位径d50小于2μm时，粘度变高，因此不优选。另外，当中位径d50为2μm以上时，能够更高效率地使（B）金属颗粒以长轴相对于重力方向平行的方式排列。
另外，当中位径d50超过10μm时，在涂敷或固化时树脂成分容易流出而发生渗出，因此不优选。另外，当中位径d50为10μm以下时，能够更高效率地使（B）金属颗粒以长轴相对于重力方向平行的方式排列。
另外，在将通过流动式颗粒图像分析装置得到的个数基准粒度分布中的（B）金属颗粒的平均长径设为D时，优选（B）金属颗粒的平均长径D与（C）绝缘颗粒的中位径d50满足D×0.1＜d50＜D×2的关系。当满足上述关系时，（C）绝缘颗粒能够对（B）金属颗粒的排列产生更有效的影响。
另外，（C）绝缘颗粒的配合量，相对于全部树脂膏100体积％，优选为6体积％以上48.5体积％以下，通过使（C）绝缘颗粒的配合量在该范围，能够得到良好的热传导性和导电性，操作性也优异。在树脂膏中的（C）绝缘颗粒小于6体积％的情况下，有可能不能使（B）金属颗粒与重力方向平行地排列，当树脂膏中的（C）绝缘颗粒超过48.5体积％时，树脂膏的粘度变高，操作性降低，树脂膏的固化物变脆，因此，有可能耐焊接性降低，不优选。
作为无机填料，具体而言，可以列举氮化铝、氮化硼、氧化钛、碳化硅、碳酸钙、二氧化硅、氧化铝等。无机填料优选为能够使（B）金属颗粒进行排列的无机填料，另外在用于半导体用途的情况下，进一步优选为粒径一致的无机填料。另外，无机填料如果是用于对粘接层1赋予低热膨胀性、低吸湿率等，将粘接层1的厚度保持为一定的无机填料，则更优选。其中，特别优选二氧化硅或氧化铝。
作为有机填料，具体而言，可以列举苯乙烯类、苯乙烯/异戊二烯类、苯乙烯/丙烯酸类、甲基丙烯酸甲酯类、丙烯酸乙酯类、丙烯酸类、甲基丙烯酸乙酯类、丙烯腈类、甲基丙烯酸酯类、二乙烯基苯类、丙烯酸正丁酯类、尼龙类、有机硅类、聚氨酯类、三聚氰胺类、纤维素、乙酸纤维素、壳聚糖、丙烯酸橡胶/甲基丙烯酸酯类、乙烯类、乙烯/丙烯酸类、聚丙烯或苯并胍胺类、酚类、氟类、偏氯乙烯等的聚合物等。有机填料优选为能够使（B）金属颗粒进行排列的有机填料，另外在用于半导体用途的情况下，进一步优选为粒径一致的有机填料。另外，有机填料如果是用于对粘接层1赋予低热膨胀性、低吸湿率等，将粘接层1的厚度保持为一定的有机填料，则更优选。其中，特别优选以聚甲基丙烯酸甲酯为主要成分的交联有机聚合物。
在本实施方式的树脂膏中，优选进一步含有：环氧硅烷、巯基硅烷、氨基硅烷、烷基硅烷、脲基硅烷、乙烯基硅烷等硅烷偶联剂；钛酸酯偶联剂、铝偶联剂、铝/锆偶联剂等偶联剂。
在本实施方式的树脂膏中，根据需要可以使用其他添加剂。作为其他添加剂，可以列举：炭黑等着色剂；硅油、硅橡胶等低应力化成分；水滑石等无机离子交换体；消泡剂；表面活性剂；各种阻聚剂；抗氧化剂等，可以适当配合这些各种添加剂。
另外，在本实施方式的树脂膏中，能够根据需要在不对形成为固化物时的（B）金属颗粒的排列产生影响的范围内添加有机化合物。作为例子，可以列举：己烷、2-甲基戊烷、2,2-二甲基丁烷、2,3-二甲基丁烷、庚烷、辛烷、2,2,3-三甲基戊烷、异辛烷、壬烷、2,2,5-三甲基己烷、癸烷、1-己烯、1-庚烯、1-辛烯、1-壬烯、1-癸烯、乙苯、异丙苯、均三甲苯、丁苯、对异丙基苯甲烷、二乙苯、甲基环戊烷、环己烷、甲基环己烷、乙基环己烷、萜烷、环己烯、α-蒎烯、双戊烯、十氢化萘、甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、异丁醇、叔丁醇、1-戊醇、2-戊醇、3-戊醇、2-甲基-1-丁醇、异戊醇、叔戊醇、3-甲基-2-丁醇、新戊醇、1-己醇、2-甲基-1-戊醇、4-甲基-2-戊醇、2-乙基-1-丁醇、1-庚醇、2-庚醇、3-庚醇、1-辛醇、2-辛醇、2-乙基-1-己醇、3,5,5-三甲基-1-己醇、环己醇、1-甲基环己醇、2-甲基环己醇、3-甲基环己醇、4-甲基环己醇、松香醇、1,2-乙二醇、1,2-丙二醇、1,2-丁二醇、2-甲基-2,4-戊二醇、二丙醚、二异丙醚、二丁醚、苯甲醚、苯乙醚、甲氧基甲苯、苄基乙基醚、2-甲基呋喃、四氢呋喃、四氢吡喃、1,2-二甲氧基乙烷、1,2-二乙氧基乙烷、二乙二醇二甲醚、二乙二醇二乙醚、乙缩醛、丙酮、甲基乙基酮、2-戊酮、3-戊酮、2-己酮、甲基异丁基酮、2-庚酮、4-庚酮、二异丁基酮、丙酮基丙酮、异亚丙基丙酮、佛尔酮、环己酮、甲基环己酮、丙酸、丁酸、异丁酸、三甲基乙酸、正戊酸、异戊酸、2-乙基丁酸、丙酸酐、丁酸酐、甲酸乙酯、甲酸丙酯、甲酸丁酯、甲酸异丁酯、甲酸戊酯、乙酸甲酯、乙酸乙酯、乙酸丙酯、乙酸异丙酯、乙酸丁酯、乙酸异丁酯、乙酸仲丁酯、乙酸戊酯、乙酸异戊酯、乙酸-3-甲氧基丁酯、乙酸仲己酯、乙酸-2-乙基丁酯、乙酸-2-乙基己酯、乙酸环己酯、丙酸甲酯、丙酸乙酯、丙酸丁酯、丙酸异戊酯、丁酸甲酯、丁酸乙酯、丁酸丁酯、丁酸异戊酯、异丁酸异丁酯、2-羟基-2-甲基丙酸乙酯、异戊酸乙酯、异戊酸异戊酯、苯甲酸甲酯、乙二酸二乙酯、丙二酸二乙酯、乙二醇单乙酸酯、乙二醇二乙酸酯、甘油一乙酸酯、碳酸二乙酯、硝基甲烷、硝基乙烷、1-硝基丙烷、2-硝基丙烷、乙腈、丙腈、丁腈、异丁腈、戊腈、苯甲腈、二乙胺、三乙胺、二丙胺、二异丙胺、二丁胺、二异丁胺、苯胺、N-甲基苯胺、N,N-二甲基苯胺、吡咯、哌啶、吡啶、α-甲基吡啶、β-甲基吡啶、γ-甲基吡啶、2,4-二甲基吡啶、2,6-二甲基吡啶、N-甲基甲酰胺、N,N-二甲基甲酰胺、N,N-二乙基甲酰胺、N,N-二甲基乙酰胺、二甲基亚砜、2-甲氧基甲醇、2-乙氧基甲醇、2-（甲氧基甲氧基）乙醇、2-异丙氧基乙醇、2-丁氧基乙醇、2-（新戊氧基）乙醇、糠醇、四氢糠醇、二乙二醇单甲醚、1-甲氧基-2-丙醇、1-乙氧基-2-丙醇、二丙二醇单甲醚、二丙二醇单乙醚、二丙酮醇、2-（二甲基氨基）乙醇、2-（二乙基氨基）乙醇、吗啉、N-乙基吗啉、乳酸甲酯、乳酸乙酯、乳酸丁酯、乳酸戊酯、乙酸-2-甲氧基乙酯、乙酸-2-乙氧基乙酯、乙酸-2-丁氧基乙酯、乙酰乙酸甲酯、乙酰乙酸乙酯等。这些能够没有特别限定地利用，也可以并用2种以上。
本实施方式的树脂膏，能够通过例如将各成分预混合后，使用3根辊进行混炼后在真空下进行脱泡来制造。
（半导体装置）
使用本实施方式的树脂膏制作半导体装置10的方法，能够使用公知的方法。例如，使用市售的芯片接合机（die bonder），在基材2的规定部位分配涂敷树脂膏后，装配半导体元件3，进行加热固化形成粘接层1。然后，进行引线接合，使用环氧树脂形成密封材料层5，由此制作半导体装置10。
实施例
以下，对于本实施方式，具体地给出实施例，但是并不限定于这些。在本实施例中，作为树脂膏的各成分，使用以下的物质。
作为（A）热固性树脂，使用双酚F型环氧树脂（日本化药株式会社制造、RE-403S）和二烯丙酯树脂（昭和电工株式会社制造、DA-101）。
作为固化剂，使用双氰胺（株式会社ADEKA制造、Adeka HardenerEH-3636AS）。
作为固化促进剂，使用2-苯基-4-甲基-5-羟甲基咪唑（四国化成工业株式会社制造、CUREZOL2P4MHZ）。
作为聚合引发剂，使用1,1-二（叔丁基过氧基）环己烷（日本油脂株式会社制造、PERHEXA C（S））。
作为环氧稀释剂，使用叔丁基苯基缩水甘油醚（日本化药株式会社制造、TGE-H）。
作为丙烯酸稀释剂，使用乙二醇二甲基丙烯酸酯（共荣社化学株式会社制造、Light Ester EG）。
作为偶联剂，使用双（三甲氧基甲硅烷基丙基）四硫化物（大曹株式会社（DAISO Co.Ltd.）制造、CABRUS4）。
作为（B）金属颗粒，使用银颗粒1（福田金属箔粉工业株式会社制造、AgC-GS、中位径d50：8.0μm、宽高比4.1、平均长径4.6μm）。
作为（B）金属颗粒，使用银颗粒2（株式会社德力化学研究所制造、TC-101、中位径d50：8.0μm、宽高比16.4、平均长径4.6μm）。
作为（C）绝缘颗粒，使用二氧化硅颗粒A（MRC UNITEC株式会社制造、QS-4F2、中位径d50：4.2μm）、二氧化硅颗粒B（株式会社Admatechs制造、SO-E2-24C、中位径d50：0.6μm）、二氧化硅颗粒C（日本AEROSIL株式会社制造、R-805、中位径d50：0.05μm）、氧化铝颗粒（Micron株式会社制造、DAW-10、中位径d50：10μm）、有机聚合物（日本触媒株式会社制造、MA-1004、中位径d50：5μm）。
［实施例1～11、比较例1～4］
将上述的成分按照表1的比例配合，使用3根辊进行混炼，在真空腔室以2mmHg进行15分钟脱泡，分别制作树脂膏。配合比例为重量份。
（评价试验）
对由上述得到的树脂膏分别进行以下的评价试验。将评价结果示于表1。
（粘度）
在刚制作出上述的树脂膏之后，使用E型粘度计（3°锥（cone）），测定在25℃、2.5rpm时的值。将刚制作之后的粘度为10Pa·s以上50Pa·s以下的范围内的情况评价为○，将该范围以外的情况评价为×。
（体积电阻率）
为了能够测定连接电阻，将由上述得到的树脂膏夹在镀有Ag的铜框与铜框之间，在175℃烘箱中固化60分钟。固化后，使用电阻率测定装置，测定夹入有树脂膏的样品的电阻值，根据连接距离和连接面积，算出垂直（厚度）方向的体积电阻率。将垂直（厚度）方向的体积电阻率为1.0×10-1Ω·cm以下的评价为○，将超过1.0×10-1Ω·cm的评价为×。
（粘接层中的各成分的体积含有率）
分别利用下述式（1）和式（2）算出体积含有率a和b，该体积含有率a和b分别为金属颗粒和绝缘颗粒在粘接层中所占的体积除以整个粘接层的体积而得到的值。
体积含有率a＝（金属颗粒所占的体积）
/［（金属颗粒所占的体积）＋（绝缘颗粒所占的体积）＋（树脂成分所占的体积）］     （1）
体积含有率b＝（绝缘颗粒所占的体积）
/［（金属颗粒所占的体积）＋（绝缘颗粒所占的体积）＋（树脂成分所占的体积）］     （2）
在此，树脂成分表示粘接层中的除了金属颗粒和绝缘颗粒以外的成分。
另外，树脂成分所占的体积根据除了金属颗粒和绝缘颗粒以外的重量和比重算出。具体而言，关于树脂成分的比重，利用不含填料成分的树脂膏制作粘接层，利用浮力式密度比重计测定该粘接层的比重，作为树脂成分的比重使用。另外，金属颗粒所占的体积和绝缘颗粒所占的体积也同样地根据重量和比重算出。金属颗粒和绝缘颗粒的真比重参考公知文献。
Figure BDA0000424647630000211
由表1可知，实施例1～11的树脂膏，粘度处于大致适当的范围，操作性优异。另外，使用实施例1～11的树脂膏形成的粘接层，体积电阻率低，导电性优异。
产业上的可利用性
根据本发明，能够提供导电性良好的半导体装置，因此本发明在产业上非常有用。
符号说明
1      粘接层
2      基材
3      半导体元件
4      引线
5      密封材料层
6      接合线
7      焊盘
10     半导体装置

Claims (8)

1.一种半导体装置，其特征在于，具备：
基材；
半导体元件；和
介于所述基材与所述半导体元件之间，将两者粘接的粘接层，
在所述粘接层中分散有金属颗粒和绝缘颗粒，
所述金属颗粒具有鳞片形状或椭球形状，
在将所述粘接层中的所述金属颗粒的体积含有率设为a，并将所述粘接层中的所述绝缘颗粒的体积含有率设为b时，
所述粘接层中的填料的体积含有率（a＋b）为0.20以上0.50以下，
所述填料中的所述金属颗粒的体积含有率a/（a＋b）为0.03以上0.70以下。
2.如权利要求1所述的半导体装置，其特征在于：
所述绝缘颗粒的通过激光衍射散射式粒度分布测定法得到的个数基准粒度分布中的中位径d50为2μm以上10μm以下。
3.如权利要求1或2所述的半导体装置，其特征在于：
在将通过流动式颗粒图像分析装置得到的个数基准粒度分布中的所述金属颗粒的平均长径设为D时，D×0.1＜d50＜D×2。
4.如权利要求1～3中任一项所述的半导体装置，其特征在于：
所述绝缘颗粒包括选自二氧化硅颗粒、氧化铝和有机聚合物中的一种以上。
5.如权利要求1～4中任一项所述的半导体装置，其特征在于：
所述金属颗粒包括银颗粒。
6.如权利要求5所述的半导体装置，其特征在于：
所述银颗粒包括用银包覆的金属颗粒。
7.如权利要求1～6中任一项所述的半导体装置，其特征在于：所述基材为引线框或BGA基板。
8.如权利要求1～7中任一项所述的半导体装置，其特征在于：所述半导体元件为耗电功率1.7W以上的功率器件。
CN201280026102.XA 2011-05-31 2012-05-29 半导体装置 Active CN103608907B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-121444 2011-05-31
JP2011121444 2011-05-31
PCT/JP2012/063729 WO2012165416A1 (ja) 2011-05-31 2012-05-29 半導体装置

Publications (2)

Publication Number Publication Date
CN103608907A true CN103608907A (zh) 2014-02-26
CN103608907B CN103608907B (zh) 2017-03-29

Family

ID=47259270

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280026102.XA Active CN103608907B (zh) 2011-05-31 2012-05-29 半导体装置

Country Status (8)

Country Link
US (1) US20140183715A1 (zh)
EP (1) EP2717301A4 (zh)
JP (1) JP6269058B2 (zh)
KR (2) KR101912573B1 (zh)
CN (1) CN103608907B (zh)
SG (1) SG194956A1 (zh)
TW (1) TWI540590B (zh)
WO (1) WO2012165416A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105440581A (zh) * 2014-09-19 2016-03-30 三星电机株式会社 用于无线充电的复合板及其制造方法
CN109643662A (zh) * 2016-08-19 2019-04-16 住友电木株式会社 芯片粘结膏和半导体装置
CN109790424A (zh) * 2016-09-23 2019-05-21 E.I.内穆尔杜邦公司 导电粘合剂
CN113490727A (zh) * 2019-02-27 2021-10-08 纳美仕有限公司 导电性粘接剂

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016171623A1 (en) * 2015-04-20 2016-10-27 Agency For Science, Technology And Research Conductive polymer composite as plastic solder
JP6706818B2 (ja) * 2016-06-30 2020-06-10 国立大学法人大阪大学 半導体装置
US11101052B2 (en) 2016-10-06 2021-08-24 Sekisui Chemical Co., Ltd. Conductive material, connection structure and method for producing connection structure
JP6888401B2 (ja) * 2017-04-28 2021-06-16 日亜化学工業株式会社 金属粉焼結ペースト及びその製造方法、ならびに導電性材料の製造方法
JP7273302B2 (ja) 2019-07-29 2023-05-15 株式会社ノーリツ 給湯装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211145A (ja) * 1993-12-16 1995-08-11 Minnesota Mining & Mfg Co <3M> 異方性導電膜
JP2004193250A (ja) * 2002-12-10 2004-07-08 Hitachi Chem Co Ltd 導電性ペースト及びそれを用いた半導体装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0623349B2 (ja) * 1986-01-30 1994-03-30 富士高分子工業株式会社 異方導電性接着剤
DK54988A (da) * 1987-11-25 1989-05-26 Du Pont Materiale til binding af integrerede kredsloeb til uorganiske, dielektriske underlag
JPH0565456A (ja) * 1991-09-09 1993-03-19 Sumitomo Bakelite Co Ltd 気密封止用樹脂ペースト
JPH0589721A (ja) 1991-09-30 1993-04-09 Miyazaki Oki Electric Co Ltd 導電性接着剤及びその導電性接着剤を使用した接着体
JP3407954B2 (ja) * 1993-10-25 2003-05-19 住友ベークライト株式会社 導電性樹脂ペースト
US5686703A (en) * 1994-12-16 1997-11-11 Minnesota Mining And Manufacturing Company Anisotropic, electrically conductive adhesive film
JP2905121B2 (ja) * 1995-07-19 1999-06-14 ソニーケミカル株式会社 異方性導電接着フィルム
JP4148754B2 (ja) * 2002-11-08 2008-09-10 住友ベークライト株式会社 半導体用樹脂ペースト及び半導体装置
JP2004304704A (ja) * 2003-04-01 2004-10-28 Matsushita Electric Ind Co Ltd 薄膜音響共振子、及び、薄膜音響共振子回路
CN102618213B (zh) * 2004-03-19 2015-05-20 住友电木株式会社 树脂组合物及采用该树脂组合物制作的半导体装置
JP2007149522A (ja) * 2005-11-29 2007-06-14 Sumitomo Metal Mining Co Ltd 銀とカーボンナノチューブを含む導電性樹脂ペースト組成物およびこれを用いた半導体装置
CN101513143B (zh) * 2006-09-14 2011-09-28 住友电木株式会社 接合部结构及接合方法、布线板及其制造方法
CN101536172B (zh) * 2006-10-30 2012-05-30 住友电木株式会社 液体树脂组合物、具粘合剂层的半导体晶片、具粘合剂层的半导体元件、封装件及其制法
CN101558490A (zh) * 2006-12-05 2009-10-14 住友电木株式会社 半导体封装件、芯层材料、积层材料及密封树脂组合物
US8119040B2 (en) * 2008-09-29 2012-02-21 Rockwell Collins, Inc. Glass thick film embedded passive material
JP5332464B2 (ja) * 2008-09-30 2013-11-06 住友ベークライト株式会社 樹脂組成物および樹脂組成物を使用して作製した半導体装置
WO2010052871A1 (ja) * 2008-11-06 2010-05-14 住友ベークライト株式会社 電子装置の製造方法および電子装置
JP5342910B2 (ja) * 2009-03-31 2013-11-13 三井化学株式会社 導電ペースト組成物および焼成体
JP5611537B2 (ja) * 2009-04-28 2014-10-22 日立化成株式会社 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置
US8637379B2 (en) * 2009-10-08 2014-01-28 Infineon Technologies Ag Device including a semiconductor chip and a carrier and fabrication method
JP2011179101A (ja) * 2010-03-04 2011-09-15 Autonetworks Technologies Ltd 防食剤、端子付き被覆電線およびワイヤーハーネス
JPWO2011118147A1 (ja) * 2010-03-25 2013-07-04 住友ベークライト株式会社 固形レゾール型フェノール樹脂およびその製造方法
TWI608062B (zh) * 2011-05-31 2017-12-11 住友電木股份有限公司 樹脂組成物、使用它之半導體裝置及半導體裝置之製造方法
JP6015131B2 (ja) * 2012-05-29 2016-10-26 住友ベークライト株式会社 樹脂組成物、それを用いた半導体装置
JP6111535B2 (ja) * 2012-05-31 2017-04-12 住友ベークライト株式会社 熱硬化性樹脂組成物、半導体装置および半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211145A (ja) * 1993-12-16 1995-08-11 Minnesota Mining & Mfg Co <3M> 異方性導電膜
JP2004193250A (ja) * 2002-12-10 2004-07-08 Hitachi Chem Co Ltd 導電性ペースト及びそれを用いた半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105440581A (zh) * 2014-09-19 2016-03-30 三星电机株式会社 用于无线充电的复合板及其制造方法
CN105440581B (zh) * 2014-09-19 2019-03-05 三星电机株式会社 用于无线充电的复合板及其制造方法
CN109643662A (zh) * 2016-08-19 2019-04-16 住友电木株式会社 芯片粘结膏和半导体装置
CN109643662B (zh) * 2016-08-19 2021-07-13 住友电木株式会社 芯片粘结膏和半导体装置
CN109790424A (zh) * 2016-09-23 2019-05-21 E.I.内穆尔杜邦公司 导电粘合剂
CN109790424B (zh) * 2016-09-23 2020-12-08 E.I.内穆尔杜邦公司 导电粘合剂
CN113490727A (zh) * 2019-02-27 2021-10-08 纳美仕有限公司 导电性粘接剂

Also Published As

Publication number Publication date
EP2717301A4 (en) 2015-04-01
TW201250711A (en) 2012-12-16
KR101969278B1 (ko) 2019-04-15
TWI540590B (zh) 2016-07-01
JPWO2012165416A1 (ja) 2015-02-23
US20140183715A1 (en) 2014-07-03
JP6269058B2 (ja) 2018-01-31
EP2717301A1 (en) 2014-04-09
SG194956A1 (en) 2013-12-30
CN103608907B (zh) 2017-03-29
KR20180118802A (ko) 2018-10-31
WO2012165416A1 (ja) 2012-12-06
KR101912573B1 (ko) 2018-10-29
KR20140027305A (ko) 2014-03-06

Similar Documents

Publication Publication Date Title
CN103608907A (zh) 半导体装置
CN103563063A (zh) 树脂组合物、使用其的半导体装置和半导体装置的制造方法
CN103563061B (zh) 半导体装置
TWI585147B (zh) 樹脂組成物、樹脂片、附有金屬箔的樹脂片、樹脂硬化物片、結構體以及動力用或光源用半導體元件
KR20140111302A (ko) 경화성 방열 조성물
KR102029853B1 (ko) 열전도성 페이스트 및 전자 장치
JP5428134B2 (ja) 液状樹脂組成物および該液状樹脂組成物を使用して作製した半導体装置
TW201444962A (zh) 裝置、接著劑用組成物、接著片
KR102076547B1 (ko) 열전도성 페이스트 및 전자 장치
JP6420121B2 (ja) 半導体接着用樹脂組成物及び半導体装置
JP6015131B2 (ja) 樹脂組成物、それを用いた半導体装置
JP2012253088A (ja) 半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant