WO2012165416A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- WO2012165416A1 WO2012165416A1 PCT/JP2012/063729 JP2012063729W WO2012165416A1 WO 2012165416 A1 WO2012165416 A1 WO 2012165416A1 JP 2012063729 W JP2012063729 W JP 2012063729W WO 2012165416 A1 WO2012165416 A1 WO 2012165416A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- adhesive layer
- metal particles
- particles
- resin
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29311—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29318—Zinc [Zn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29324—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29364—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Definitions
- the present invention relates to a semiconductor device manufactured using a resin paste.
- This application claims priority on May 31, 2011 based on Japanese Patent Application No. 2011-112444 for which it applied to Japan, and uses the content here.
- a semiconductor element is fixed on a base material such as a lead frame or a substrate via an adhesive layer.
- an adhesive layer is required to have electrical conductivity and thermal conductivity in addition to adhesiveness, and can be formed from a resin paste containing silver particles.
- Patent Documents 1 and 2 describe that the adhesive layer is formed by a resin paste containing silver particles.
- Patent Document 1 it is said that precipitation of silver particles can be suppressed by containing spherical silica having an average particle size of 0.1 to 1.0 ⁇ m in a resin paste in which silver particles are dispersed in a thermosetting resin. Yes.
- spherical silica is insulative, if it is included in the adhesive layer, the conductivity may deteriorate.
- Patent Document 2 by adding spherical silica having a small distribution width to a resin paste in which silver particles are dispersed in a thermosetting resin, the particle diameter is controlled to be approximately the same as the film thickness of the adhesive layer. It is said that the adhesive layer can be controlled to a certain thickness.
- spherical silica is insulative, if it is included in the adhesive layer, the conductivity may deteriorate.
- the present invention has been made in view of the above-mentioned problems, and the problem is to provide a semiconductor device having good conductivity.
- a substrate A semiconductor element; An adhesive layer interposed between the base material and the semiconductor element and bonding them; With In the adhesive layer, metal particles and insulating particles are dispersed, The metal particles have a scale shape or an elliptical sphere shape, When the volume content of the metal particles in the adhesive layer is a, and the volume content of the insulating particles in the adhesive layer is b, The volume content (a + b) of the filler in the adhesive layer is 0.20 or more and 0.50 or less, There is provided a semiconductor device in which a volume content a / (a + b) of the metal particles in the filler is 0.03 or more and 0.70 or less.
- the adhesive layer satisfying the above conditions exhibits good conductivity is not necessarily clear, but the following reasons are conceivable.
- the volume content (a + b) of the filler in the adhesive layer is in the above range, the surface of the adhesive layer is excellent in smoothness. Therefore, the contact resistance between the adhesive layer and the substrate or the semiconductor element is reduced, and the interface of the adhesive layer is reduced. The conductivity is improved.
- the volume content a / (a + b) of the metal particles in the filler is within the above range, a partial aggregate of insulating particles is generated, and the length of the scale-shaped or elliptical spherical metal particles is generated by the aggregate.
- the axes are arranged parallel to the direction of gravity.
- the metal particles are arranged perpendicular to the direction of gravity in a portion where the aggregate is not present. For this reason, the aggregate of the insulating particles forms the vertical and horizontal contact portions of the metal particles. Therefore, it is presumed that when the adhesive layer satisfies the above conditions, good conductivity can be realized in the film thickness direction of the adhesive layer.
- a semiconductor device having good conductivity is provided.
- FIG. 1 is a cross-sectional view showing a configuration of a semiconductor device 10 in the present embodiment.
- the semiconductor device 10 in the present embodiment includes a base material 2, a semiconductor element 3, and an adhesive layer 1 that is interposed between the base material 2 and the semiconductor element 3 and adheres them.
- the adhesive layer 1 is formed by press-bonding a paste-like resin composition (hereinafter also referred to as a resin paste) containing scale-shaped or oval-spherical metal particles and insulating particles between the semiconductor element 3 and the substrate 2.
- a resin paste a paste-like resin composition
- scale-shaped or oval-spherical metal particles and insulating particles are dispersed.
- the adhesive layer 1 in this embodiment has a filler volume content (a + b) of 0.20 or more, where a is the volume content of metal particles in the adhesive layer 1 and b is the volume content of insulating particles. .50 or less, preferably 0.25 or more and 0.45 or less, more preferably 0.30 or more and 0.40 or less.
- the filler in the adhesive layer 1 represents metal particles and insulating particles.
- the adhesive layer 1 in this embodiment has a volume content a / (a + b) of the metal particles in the filler of 0.03 to 0.70, preferably 0.05 to 0.65, More preferably, it is 0.10 or more and 0.60 or less.
- a conductive network of metal particles can be formed in the film thickness direction.
- a partial aggregate of insulating particles is generated, and the long axis of the scale-shaped or elliptical spherical metal particles is arranged in parallel to the direction of gravity by the aggregate. Further, the metal particles are arranged perpendicular to the direction of gravity in a portion where the aggregate is not present.
- the aggregate of the insulating particles forms a contact portion between the metal particles in the vertical direction and the horizontal direction, and the conductive network is efficiently formed in the film thickness direction of the adhesive layer 1. Therefore, the adhesive layer 1 that satisfies the above conditions can realize good conductivity in the film thickness direction of the adhesive layer.
- the volume contents a and b are values obtained by dividing the volume occupied by the metal particles and the insulating particles in the adhesive layer 1 by the volume of the entire adhesive layer, and are calculated from the following formulas (1) and (2), respectively.
- Volume content a (volume occupied by metal particles) / [(Volume occupied by metal particles) + (Volume occupied by insulating particles) + (Volume occupied by resin component)]
- Volume content b (volume occupied by insulating particles) / [(Volume occupied by metal particles) + (Volume occupied by insulating particles) + (Volume occupied by resin component)] (2)
- the resin component represents a component other than the metal particles and the insulating particles in the adhesive layer 1.
- the volume occupied by the resin component is calculated from the weight and specific gravity other than the metal particles and insulating particles.
- the specific gravity of the resin component an adhesive layer is prepared from a resin paste containing no filler, and the specific gravity of the adhesive layer is used as the specific gravity of the resin component.
- the volume occupied by the metal particles and the volume occupied by the insulating particles are similarly calculated from the weight and the true specific gravity.
- the specific gravity of the adhesive layer resin component can be measured by a buoyancy type density specific gravity meter.
- the value of publicly known literature can be used for the true specific gravity of metal particles and insulating particles. However, the true specific gravity of the metal particles and the insulating particles is not described in the publicly known literature. For example, the specific gravity of the mixture is measured with a vibrating density hydrometer by mixing with a liquid with a known specific gravity, and the relationship between the weight and the volume. Can be calculated.
- the thickness of the adhesive layer 1 is not particularly limited, but is preferably 5 ⁇ m or more and 50 ⁇ m or less, and more preferably 10 ⁇ m or more and 40 ⁇ m or less. By setting it to the lower limit value or more, the adhesive strength can be further exhibited. Moreover, electroconductivity and thermal conductivity can be further improved by setting it as an upper limit or less.
- the base material 2 is not specifically limited, 42 alloy lead frames, lead frames such as a copper lead frame, a glass epoxy substrate (a substrate made of glass fiber reinforced epoxy resin), a BT substrate (a cyanate monomer and its oligomer and bismaleimide). BT resin-use substrate), other semiconductor elements, semiconductor wafers, spacers, and the like.
- a lead frame and an organic substrate that can more effectively exhibit the conductivity and thermal conductivity of the adhesive layer 1 are preferable.
- the organic substrate is preferably a BGA (Ball Grid Array) substrate.
- the semiconductor element 3 is not particularly limited, but is preferably a power device having a power consumption of 1.7 W or more that can more effectively exhibit the conductivity and thermal conductivity of the adhesive layer 1, for example.
- the semiconductor element 3 is electrically connected to the lead 4 via the pad 7 and the bonding wire 6. Further, the periphery of the semiconductor element 3 is sealed with a sealing material layer 5.
- the resin paste in this embodiment contains (A) a thermosetting resin, (B) metal particles, and (C) insulating particles.
- thermosetting resin is a general thermosetting resin that forms a three-dimensional network structure by heating.
- the (A) thermosetting resin is not particularly limited, but is preferably a material that forms a liquid resin composition, and is preferably liquid at room temperature. Examples thereof include cyanate resin, epoxy resin, and resin having two or more radical polymerizable carbon-carbon double bonds in one molecule.
- the cyanate resin related to the thermosetting resin is a compound having an —NCO group in the molecule, and forms a three-dimensional network structure by the reaction of the —NCO group by heating, and is cured. It is a polyfunctional cyanate compound or a low molecular polymer thereof that cures.
- the cyanate resin related to the thermosetting resin is not particularly limited, and for example, 1,3-dicyanatobenzene, 1,4-dicyanatobenzene, 1,3,5-tricyanatobenzene, 1,3- Dicyanatonaphthalene, 1,4-dicyanatonaphthalene, 1,6-dicyanatonaphthalene, 1,8-dicyanatonaphthalene, 2,6-dicyanatonaphthalene, 2,7-dicyanatonaphthalene, 1,3,6- Tricyanatonaphthalene, 4,4'-dicyanatobiphenyl, bis (4-cyanatophenyl) methane, bis (3,5-dimethyl-4-cyanatophenyl) methane, 2,2-bis (4-cyanatophenyl) ) Propane, 2,2-bis (3,5-dibromo-4-cyanatophenyl) propane, bis (4-cyanatophenyl) ether, bis (4-cyanato) Reaction products such as phenyl,
- Examples of the resulting cyanates include prepolymers having a triazine ring formed by trimerization of cyanate groups of these polyfunctional cyanate resins.
- This prepolymer is obtained by polymerizing the above-mentioned polyfunctional cyanate resin monomer using, for example, an acid such as mineral acid or Lewis acid, a base such as sodium alcoholate or tertiary amine, or a salt such as sodium carbonate as a catalyst. It is done.
- organometallic complexes such as zinc octylate, tin octylate, cobalt naphthenate, zinc naphthenate and ace
- the epoxy resin related to the thermosetting resin is a compound having one or more glycidyl groups in the molecule, and is a compound that forms and cures a three-dimensional network structure by the reaction of the glycidyl group by heating. .
- the epoxy resin relating to the thermosetting resin preferably contains two or more glycidyl groups in one molecule, but this is a cured product which is sufficient even if it is reacted with only one compound having a glycidyl group. This is because the characteristics cannot be shown.
- compounds containing two or more glycidyl groups in one molecule include bisphenol compounds such as bisphenol A, bisphenol F, and biphenol or derivatives thereof, hydrogenated bisphenol A, hydrogen Diols having an alicyclic structure such as added bisphenol F, hydrogenated biphenol, cyclohexanediol, cyclohexanedimethanol, and shidilohexanediethanol, or derivatives thereof, aliphatics such as butanediol, hexanediol, octanediol, nonanediol, and decanediol Bifunctional compounds obtained by epoxidizing diols or derivatives thereof, trihydroxyphenylmethane skeleton, trifunctional compounds having aminophenol skeleton, phenol novolac resin, cresol novo Click resins, phenol aralkyl resins, biphenyl aralkyl resins,
- the epoxy resin which concerns on (A) thermosetting resin is a liquid at room temperature as individual or a mixture.
- a method for epoxidizing a diol or a derivative thereof include a method for epoxidizing by reacting two hydroxyl groups of a diol or a derivative thereof with epichlorohydrin and converting it to glycidyl ether. The same applies to those having three or more functional groups. It is also possible to use reactive diluents as is usual.
- Examples of the reactive diluent include monofunctional aromatic glycidyl ethers such as phenyl glycidyl ether, tertiary butyl phenyl glycidyl ether, and cresyl glycidyl ether, and aliphatic glycidyl ethers.
- the resin paste in this embodiment contains a hardening
- curing agent of the epoxy resin which concerns on a thermosetting resin an aliphatic amine, an aromatic amine, a dicyandiamide, a dihydrazide compound, an acid anhydride, a phenol resin etc. are mentioned, for example.
- Acid anhydrides as curing agents for epoxy resins include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride, dodecenyl succinic anhydride, And maleic anhydride.
- a phenol resin as a curing agent for an epoxy resin related to a thermosetting resin is a compound having two or more phenolic hydroxyl groups in one molecule.
- curing agent of the epoxy resin which concerns on a thermosetting resin should just have two or more phenolic hydroxyl groups in 1 molecule, However, 2 phenolic hydroxyl groups are contained in 1 molecule. It is preferably 5 or less and more preferably 2 or 3 phenolic hydroxyl groups in one molecule.
- Such compounds include bisphenol F, bisphenol A, bisphenol S, tetramethyl bisphenol A, tetramethyl bisphenol F, tetramethyl bisphenol S, dihydroxy diphenyl ether, dihydroxy benzophenone, tetramethyl biphenol, ethylidene bisphenol, methyl ethylidene bis (methyl phenol ), Bisphenols such as cyclohexylidene bisphenol and biphenol and their derivatives, trifunctional phenols such as tri (hydroxyphenyl) methane and tri (hydroxyphenyl) ethane and their derivatives, and phenols such as phenol novolac and cresol novolac A compound obtained by reacting formaldehyde with formaldehyde, the main one being a binuclear or trinuclear body Such as derivatives.
- thermosetting resin examples include imidazoles, triphenylphosphine or tetraphenylphosphonium salts, amine compounds such as diazabicycloundecene, and salts thereof.
- an imidazole compound having a melting point of 180 ° C. or higher is particularly preferable.
- the epoxy resin is also preferably used in combination with a cyanate resin and a resin having two or more radically polymerizable carbon-carbon double bonds in one molecule.
- a resin having two or more radically polymerizable carbon-carbon double bonds in one molecule relating to a thermosetting resin is a compound having a carbon-carbon double bond in the molecule. It is a resin that forms a three-dimensional network structure by the reaction of double bonds and cures.
- the molecular weight of (A) is preferably 500 or more and 50,000 or less. This is because the elastic modulus of the adhesive layer is too high when it is smaller than the above range, and the viscosity of the resin paste becomes too high when it is larger than the above range. Examples of preferred resins having two or more radically polymerizable carbon-carbon double bonds in one molecule are shown below, but are not limited thereto.
- a compound having two or more acrylic groups in one molecule is preferably a polyether, polyester, polycarbonate, poly (meth) acrylate, polybutadiene, butadiene acrylonitrile copolymer having a molecular weight of 500 or more and 50,000 or less.
- a compound having two or more in one molecule is preferably a polyether, polyester, polycarbonate, poly (meth) acrylate, polybutadiene, butadiene acrylonitrile copolymer having a molecular weight of 500 or more and 50,000 or less.
- the polyether those in which an organic group having 3 to 6 carbon atoms is repeated via an ether bond are preferable, and those having no aromatic ring are preferable. This is because when an aromatic ring is contained, it becomes a solid or high viscosity as a compound having two or more acrylic groups in one molecule, and the elastic modulus when it is a cured product becomes too high.
- the molecular weight of the compound having two or more acrylic groups in one molecule is preferably 500 or more and 50,000 or less as described above, more preferably 500 or more and 5,000 or less, and particularly preferably 500. Above, it is 2,000 or less. This is because an adhesive layer having good workability and low elastic modulus can be obtained within the above range.
- Such a polyether compound having two or more acrylic groups in one molecule can be obtained by a reaction between a polyether polyol, (meth) acrylic acid and a derivative thereof.
- the polyester is preferably one in which an organic group having 3 to 6 carbon atoms is repeated via an ester bond, and preferably does not contain an aromatic ring. This is because when an aromatic ring is contained, it becomes a solid or high viscosity as a compound having two or more acrylic groups in one molecule, and the elastic modulus when it is a cured product becomes too high.
- the molecular weight of the compound having two or more acrylic groups in one molecule is preferably 500 or more and 50,000 or less as described above, more preferably 500 or more and 5,000 or less, and particularly preferably 500. Above, it is 2,000 or less. This is because an adhesive layer having good workability and low elastic modulus can be obtained within the above range.
- Such a polyester compound having two or more acrylic groups in one molecule can be obtained by reacting a polyester polyol with (meth) acrylic acid and its derivatives.
- the polycarbonate is preferably one in which an organic group having 3 to 6 carbon atoms is repeated via a carbonate bond, and preferably does not contain an aromatic ring. This is because when an aromatic ring is contained, it becomes a solid or high viscosity as a compound having two or more acrylic groups in one molecule, and the elastic modulus when it is a cured product becomes too high.
- the molecular weight of the compound having two or more acrylic groups in one molecule is preferably 500 or more and 50,000 or less as described above, more preferably 500 or more and 5,000 or less, and particularly preferably 500. More than 2,000. This is because an adhesive layer with good workability and low elastic modulus can be obtained within this range.
- Such a polycarbonate compound having two or more acrylic groups in one molecule can be obtained by reacting a polycarbonate polyol with (meth) acrylic acid and a derivative thereof.
- poly (meth) acrylate examples include a copolymer of (meth) acrylic acid and (meth) acrylate, a copolymer of (meth) acrylate having a hydroxyl group and (meth) acrylate having no polar group, and a glycidyl group.
- a copolymer of (meth) acrylate having a (meth) acrylate having no polar group is preferred.
- the molecular weight of the compound having two or more acrylic groups in one molecule is preferably 500 or more and 50,000 or less as described above, but more preferably 500 or more and 25,000 or less. This is because an adhesive layer with good workability and low elastic modulus can be obtained within this range.
- such a (meth) acrylate compound having two or more acrylic groups in one molecule reacts with a (meth) acrylate having a hydroxyl group or a (meth) acrylate having a glycidyl group.
- a copolymer having a hydroxyl group it reacts with (meth) acrylic acid and its derivative
- a copolymer having a glycidyl group it is obtained by reacting with (meth) acrylic acid and its derivative. It is possible.
- the polybutadiene can be obtained by a reaction of a polybutadiene having a carboxy group with a (meth) acrylate having a hydroxyl group or a (meth) acrylate having a glycidyl group, or a reaction of a polybutadiene having a hydroxyl group with (meth) acrylic acid or a derivative thereof. It can also be obtained by reaction of polybutadiene to which maleic anhydride has been added and (meth) acrylate having a hydroxyl group.
- the butadiene acrylonitrile copolymer can be obtained by a reaction between a butadiene acrylonitrile copolymer having a carboxy group and a (meth) acrylate having a hydroxyl group or a (meth) acrylate having a glycidyl group.
- Preferred compounds having two or more allyl groups in one molecule are polyethers, polyesters, polycarbonates, polyacrylates, polymethacrylates, polybutadienes and butadiene acrylonitrile copolymers having a molecular weight of 500 to 50,000.
- Preferred compounds having two or more maleimide groups in one molecule are, for example, N, N ′-(4,4′-diphenylmethane) bismaleimide, bis (3-ethyl-5-methyl-4-maleimidophenyl) And bismaleimide compounds such as methane and 2,2-bis [4- (4-maleimidophenoxy) phenyl] propane. More preferred are compounds obtained by reaction of dimer acid diamine and maleic anhydride, and compounds obtained by reaction of maleimidated amino acids such as maleimide acetic acid and maleimide caproic acid with polyols. The maleimidated amino acid is obtained by reacting maleic anhydride with aminoacetic acid or aminocaproic acid.
- polyether polyol As the polyol, polyether polyol, polyester polyol, polycarbonate polyol, polyacrylate polyol, and polymethacrylate polyol are preferable. Those not containing are particularly preferred. This is because when an aromatic ring is contained, it becomes a solid or high viscosity as a compound having two or more maleimide groups in one molecule, and the elastic modulus when it is a cured product becomes too high.
- the following compounds can be used within a range not impairing the effect of the (A) thermosetting resin.
- dicarboxylic acids examples include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, phthalic acid, and tetrahydrophthalic acid. , Hexahydrophthalic acid and derivatives thereof.
- a thermal radical polymerization initiator is preferably used as a polymerization initiator for a resin having two or more radically polymerizable carbon-carbon double bonds in one molecule of (A) thermosetting resin.
- a desirable one is a rapid heating test (decomposition start temperature when a sample is placed on an electric heating plate and heated at 4 ° C./min. In which the decomposition temperature is 40 ° C. or more and 140 ° C. or less. If the decomposition temperature is less than 40 ° C., the preservability of the resin paste at normal temperature is deteriorated, and if it exceeds 140 ° C., the curing time becomes extremely long.
- thermal radical polymerization initiator satisfying this include methyl ethyl ketone peroxide, methylcyclohexanone peroxide, methyl acetoacetate peroxide, acetylacetone peroxide, 1,1-bis (t-butylperoxy) 3, 3, 5 -Trimethylcyclohexane, 1,1-bis (t-hexylperoxy) cyclohexane, 1,1-bis (t-hexylperoxy) 3,3,5-trimethylcyclohexane, 1,1-bis (t-butylperoxy) ) Cyclohexane, 2,2-bis (4,4-di-t-butylperoxycyclohexyl) propane, 1,1-bis (t-butylperoxy) cyclododecane, n-butyl 4,4-bis (t- Butyl peroxy) valerate, 2,2-bis (t-butylperoxy) Tan, 1,1-bis (t-butylperoxy) Tan
- thermosetting resin The compounding quantity of a thermosetting resin is 50 volume% or more and 80 volume% or less with respect to 100 volume% of all the resin pastes, Preferably it is 55 volume% or more and 75 volume% or less, More preferably, it is 60 volume%. It is 70 volume% or less. By setting it within this range, the workability and heat resistance of the resin paste are further improved.
- Metal particles (B) Although it will not specifically limit if a shape is a scale shape or an ellipsoidal shape as a metal particle, Since it is excellent in electroconductivity and heat conductivity, Preferably a silver particle is mentioned. In addition to silver, at least one or more of metal particles made of, for example, copper, gold, nickel, palladium, aluminum, tin, zinc, or alloy particles of these metals can be used. Here, the silver particles include metal particles in which the surfaces of metal particles made of copper, gold, nickel, palladium, aluminum, tin, zinc, and the like are coated with silver.
- the shape of the metal particles is a scale shape or an elliptical sphere shape.
- the elliptical spherical shape means a circular spherical shape.
- the long axes of the metal particles can be arranged in parallel to the direction of gravity by the insulating particles.
- metal particles can be arranged perpendicular to the direction of gravity in a portion where there are no insulating particles.
- the aspect ratio of the (B) metal particles is not particularly limited, but is preferably 1.0 or more and 40.0 or less, more preferably 2.0 or more and 40.0 or less, and further preferably 4.0. It is 30.0 or less.
- the (B) metal particles can be arranged such that the long axis of the (B) metal particles is more parallel to the direction of gravity.
- the aspect ratio exceeds the above upper limit, it is not preferable because the workability during mounting may be deteriorated as a resin paste.
- (B) aspect ratio of metal particles (B) average major axis of metal particles / (B) average thickness of metal particles.
- the average major axis of the metal particles is an average major axis of 1000 or more of the (B) metal particles in the number-based particle size distribution by the flow type particle image analyzer, and the average thickness of the (B) metal particles is 7 mm ⁇
- An appropriate amount of resin paste is applied onto a 7 mm silicon chip, and a 5 mm ⁇ 5 mm silicon chip is mounted thereon so that the resin paste layer is about 20 ⁇ m, cured at 175 ° C. for 60 minutes, and then polished to obtain a resin.
- the cross section of the paste layer was taken out, and the thickness of 50 (B) metal particles was measured by SEM to obtain an average thickness.
- the particle diameter of the metal particles (B) varies depending on the required viscosity of the resin paste.
- the median diameter d 50 in the number-based particle size distribution measured by the laser diffraction scattering particle size distribution measurement method of the metal particles is 0.3 ⁇ m.
- the thickness is preferably 20 ⁇ m or less.
- the median diameter d 50 is less than 0.3 ⁇ m, the viscosity is high, and when the median diameter d 50 exceeds 20 ⁇ m, the resin component tends to flow out during coating or curing, and bleeding is not preferable.
- the median diameter d 50 exceeds 20 ⁇ m when applying the resin paste with a dispenser, the needle outlet may be blocked and continuous use for a long time may not be possible.
- the (B) metal particles to be used preferably have a content of ionic impurities such as halogen ions and alkali metal ions of 10 ppm or less.
- the (B) metal particles used in the present embodiment may be those obtained by previously treating the surface with a silane coupling agent such as alkoxysilane, acyloxysilane, silazane, or organoaminosilane.
- the blending amount of the metal particles (B) is preferably 0.6% by volume or more and 35% by volume or less with respect to 100% by volume of the total resin paste. Conductivity can be obtained and workability is excellent.
- metal particles in the resin paste are less than 0.6% by volume, (B) metal particles are covered with (A) thermosetting resin, and (B) metal particles are parallel to the direction of gravity. There is a possibility that the arrangement cannot be imparted, and if it exceeds 35% by volume, the viscosity of the resin paste becomes high and the workability is lowered, or the cured product of the resin paste becomes brittle, so that the solder resistance may be lowered. There is not preferable.
- the insulating particles are not particularly limited, but any particles that affect the arrangement of (B) metal particles can be used without any problem. Examples thereof include inorganic fillers such as silica particles and alumina, and organic fillers such as organic polymers.
- Insulating particles are preferably those in which the contained (B) metal particles can be arranged, and when used for semiconductors, those having uniform particle diameters are more preferable. Further, (C) the insulating particles are more preferable if they provide the adhesive layer 1 in the present embodiment with low thermal expansion, low moisture absorption, etc., and keep the thickness of the adhesive layer 1 constant after curing. .
- the particle diameter of the insulating particles (C) varies depending on the required viscosity of the resin paste.
- the median diameter d 50 in the number-based particle size distribution measured by the laser diffraction scattering particle size distribution measurement method of the insulating particles (C) is The thickness is preferably 2 ⁇ m or more and 10 ⁇ m or less, more preferably 3 ⁇ m or more and 8 ⁇ m or less, and particularly preferably 3 ⁇ m or more and 6 ⁇ m or less.
- the metal particles can be arranged more efficiently so that the major axis is parallel to the direction of gravity. Further, if the median diameter d 50 exceeds 10 ⁇ m, the resin component tends to flow out during coating or curing, and bleeding is generated, which is not preferable. Further, when the median diameter d 50 is 10 ⁇ m or less, (B) the metal particles can be arranged more efficiently so that the major axis is parallel to the direction of gravity.
- the blending amount of the (C) insulating particles is preferably 6% by volume or more and 48.5% by volume or less with respect to 100% by volume of the total resin paste. Conductivity can be obtained and workability is excellent.
- the (C) insulating particles in the resin paste are less than 6% by volume, there is a possibility that the (B) metal particles cannot be arranged in parallel to the direction of gravity. Since the viscosity of the resin paste is increased, workability is lowered, and the cured product of the resin paste becomes brittle, so that solder resistance may be lowered, which is not preferable.
- the inorganic filler examples include aluminum nitride, boron nitride, titanium oxide, silicon carbide, calcium carbonate, silica, and alumina.
- the inorganic filler is preferably (B) capable of arranging metal particles, and more preferably having a uniform particle diameter when used as a semiconductor. Further, it is more preferable that the inorganic filler is for imparting low thermal expansibility and low moisture absorption to the adhesive layer 1 and keeping the thickness of the adhesive layer 1 constant. Of these, silica or alumina is particularly preferable.
- organic fillers include styrene, styrene / isoprene, styrene / acryl, methyl methacrylate, ethyl acrylate, acrylic acid, ethyl methacrylate, acrylonitrile, methacrylate, divinylbenzene, n- Butyl acrylate, nylon, silicone, urethane, melamine, cellulose, cellulose acetate, chitosan, acrylic rubber / methacrylate, ethylene, ethylene / acrylic acid, polypropylene or benzoguanamine, phenol, fluorine, chloride Examples thereof include polymers such as vinylidene.
- the organic filler is preferably (B) capable of arranging metal particles, and more preferably having a uniform particle diameter when used as a semiconductor.
- the organic filler is more preferable as long as it provides the adhesive layer 1 with low thermal expansibility, low moisture absorption, etc., and keeps the thickness of the adhesive layer 1 constant.
- a crosslinked organic polymer mainly composed of polymethyl methacrylate is particularly preferable.
- the resin paste in the present embodiment further includes a silane coupling agent such as epoxy silane, mercaptosilane, aminosilane, alkylsilane, ureidosilane, vinylsilane, titanate coupling agent, aluminum coupling agent, aluminum / zirconium coupling agent, etc. It is preferable to further contain a coupling agent.
- a silane coupling agent such as epoxy silane, mercaptosilane, aminosilane, alkylsilane, ureidosilane, vinylsilane, titanate coupling agent, aluminum coupling agent, aluminum / zirconium coupling agent, etc. It is preferable to further contain a coupling agent.
- additives may be used as necessary for the resin paste in the present embodiment.
- Other additives include colorants such as carbon black, low stress components such as silicone oil and silicone rubber, inorganic ion exchangers such as hydrotalcite, antifoaming agents, surfactants, various polymerization inhibitors, oxidation An inhibitor may be used, and these various additives may be appropriately blended.
- an organic compound to the resin paste in the present embodiment, if necessary, as long as it does not affect the arrangement of (B) metal particles when cured.
- Examples include hexane, 2-methylpentane, 2,2-dimethylbutane, 2,3-dimethylbutane, heptane, octane, 2,2,3-trimethylpentane, isooctane, nonane, 2,2,5-trimethylhexane, Decane, 1-hexene, 1-heptene, 1-octene, 1-nonene, 1-decene, ethylbenzene, cumene, mesitylene, butylbenzene, p-cymene, diethylbenzene, methylcyclopentane, cyclohexane, methylcyclohexane, ethylcyclohexane, p -Mentane, cyclohexene, ⁇
- the resin paste in the present embodiment can be produced, for example, by premixing each component, kneading using three rolls, and degassing under vacuum.
- semiconductor device As a method for manufacturing the semiconductor device 10 using the resin paste in the present embodiment, a known method can be used. For example, using a commercially available die bonder, a resin paste is dispensed onto a predetermined portion of the substrate 2, and then the semiconductor element 3 is mounted and heat cured to form the adhesive layer 1. Then, the semiconductor device 10 is produced by wire-bonding and forming the sealing material layer 5 using an epoxy resin.
- thermosetting resin bisphenol F type epoxy resin (Nippon Kayaku Co., Ltd., RE-403S) and diallyl ester resin (Showa Denko Co., Ltd., DA-101) were used.
- dicyandiamide manufactured by ADEKA, Adeka Hardener EH-3636AS
- 2-Phenyl-4-methyl-5-hydroxymethylimidazole manufactured by Shikoku Kasei Kogyo Co., Ltd., Curesol 2P4MHZ
- 1,1-di (t-butylperoxy) cyclohexane (manufactured by NOF Corporation, perhexa C (S)) was used as a polymerization initiator.
- Tertiary butyl phenyl glycidyl ether (manufactured by Nippon Kayaku Co., Ltd., TGE-H) was used as an epoxy diluent.
- acrylic diluent ethylene glycol dimethacrylate (manufactured by Kyoeisha Chemical Co., Ltd., light ester EG) was used.
- Bis (trimethoxysilylpropyl) tetrasulfide (Daiso Co., Cabras 4) was used as a coupling agent.
- silver particles 1 manufactured by Fukuda Metal Foil Industry Co., Ltd., AgC-GS, median diameter d 50 : 8.0 ⁇ m, aspect ratio 4.1, average major axis 4.6 ⁇ m
- silver particles 2 manufactured by Tokugawa Chemical Laboratory Co., Ltd., TC-101, median diameter d 50 : 8.0 ⁇ m, aspect ratio 16.4, average major axis 4.6 ⁇ m) were used.
- Examples 1 to 11, Comparative Examples 1 to 4 The above components were blended in the proportions shown in Table 1, kneaded using three rolls, and defoamed at 2 mmHg for 15 minutes in a vacuum chamber to prepare resin pastes. The blending ratio is parts by weight. (Evaluation test) The resin paste obtained above was subjected to the following evaluation tests. The evaluation results are shown in Table 1.
- the resin paste obtained above was sandwiched between an Ag-plated copper frame and a copper frame so that the connection resistance could be measured, and cured in an oven at 175 ° C. for 60 minutes. After curing, the electrical resistance value of the sample sandwiched with the resin paste was measured using a resistivity measuring device, and the volume resistivity in the vertical (thickness) direction was calculated from the connection distance and the connection area.
- a sample having a volume resistivity in the vertical (thickness) direction of 1.0 ⁇ 10 ⁇ 1 ⁇ ⁇ cm or less was rated as ⁇ , and a sample having a volume resistivity exceeding 1.0 ⁇ 10 ⁇ 1 ⁇ ⁇ cm was rated as ⁇ .
- Volume contents a and b which are values obtained by dividing the volume occupied by the metal particles and the insulating particles in the adhesive layer by the volume of the entire adhesive layer, were calculated from the following formulas (1) and (2), respectively.
- Volume content a (volume occupied by metal particles) / [(Volume occupied by metal particles) + (Volume occupied by insulating particles) + (Volume occupied by resin component)] (1)
- Volume content b (volume occupied by insulating particles) / [(Volume occupied by metal particles) + (Volume occupied by insulating particles) + (Volume occupied by resin component)] (2)
- the resin component represents a component other than the metal particles and the insulating particles in the adhesive layer. The volume occupied by the resin component was calculated from the weight and specific gravity other than the metal particles and insulating particles.
- the specific gravity of the resin component was obtained by preparing an adhesive layer from a resin paste not containing a filler component, measuring the specific gravity of the adhesive layer with a buoyancy density density meter, and using the specific gravity of the resin component.
- the volume occupied by the metal particles and the volume occupied by the insulating particles were similarly calculated from the weight and specific gravity.
- the true specific gravity of the metal particles and the insulating particles was referred to known literature.
- the resin pastes in Examples 1 to 11 had viscosities in an appropriate range and excellent workability.
- the adhesive layers formed using the resin pastes in Examples 1 to 11 had low volume resistivity and excellent conductivity.
- the present invention since a semiconductor device having good conductivity is provided, the present invention is extremely useful industrially.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Die Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Conductive Materials (AREA)
Abstract
Description
本願は、2011年5月31日に、日本に出願された特願2011-121444号に基づき優先権を主張し、その内容をここに援用する。
基材と、
半導体素子と、
前記基材および前記半導体素子の間に介在し、両者を接着する接着層と、
を備え、
前記接着層中に、金属粒子および絶縁粒子が分散しており、
前記金属粒子は鱗片形状または楕円球形状を有し、
前記接着層中の前記金属粒子の体積含有率をaとし、前記接着層中の前記絶縁粒子の体積含有率をbとしたとき、
前記接着層中のフィラーの体積含有率(a+b)が、0.20以上0.50以下であり、
前記フィラー中の前記金属粒子の体積含有率a/(a+b)が、0.03以上0.70以下である、半導体装置が提供される。
さらに、フィラー中の金属粒子の体積含有率a/(a+b)が上記範囲内であると、絶縁粒子の部分的な集合体が生じ、その集合体によって鱗片形状または楕円球形状の金属粒子の長軸が重力方向に対して平行に配列する。また、その集合体がない部分では金属粒子が重力方向に対して垂直に配列する。そのため、絶縁粒子の集合体により、金属粒子の垂直方向と水平方向の接触部分ができる。よって、接着層が上記の条件を満たすときに、接着層の膜厚方向において良好な導電性を実現できると推察される。
はじめに、本実施形態における半導体装置の構成について説明する。図1は、本実施形態における半導体装置10の構成を示す断面図である。
本実施形態における半導体装置10は、基材2と、半導体素子3と、基材2および半導体素子3の間に介在し、両者を接着する接着層1と、を備えている。
またこの上限値以下であると、接着層1界面の平滑性が優れ、接着層1と基材2または半導体素子3との接触抵抗が小さくなる。
さらに、この上限値以下であると、絶縁粒子の部分的な集合体が生じ、その集合体によって鱗片形状または楕円球形状の金属粒子の長軸が重力方向に対して平行に配列する。また、その集合体がない部分では金属粒子が重力方向に対して垂直に配列する。そのため、絶縁粒子の集合体により、金属粒子の垂直方向と水平方向の接触部分ができ、接着層1の膜厚方向において導電ネットワークが効率よく形成される。
したがって、上記の条件を満たす接着層1は、接着層の膜厚方向において良好な導電性を実現できる。
体積含有率a=(金属粒子の占める体積)
/[(金属粒子の占める体積)+(絶縁粒子の占める体積)+(樹脂成分の占める体積)] (1)
体積含有率b=(絶縁粒子の占める体積)
/[(金属粒子の占める体積)+(絶縁粒子の占める体積)+(樹脂成分の占める体積)] (2)
ここで、樹脂成分とは、接着層1中の金属粒子および絶縁粒子以外の成分を表す。
樹脂成分の占める体積は、金属粒子および絶縁粒子以外の重量と比重から算出する。樹脂成分の比重は、フィラーを含まない樹脂ペーストによって接着層を作製し、その接着層の比重を樹脂成分の比重として用いる。また、金属粒子の占める体積と絶縁粒子の占める体積も同様に重量と真比重から算出する。
ここで、接着層樹脂成分の比重は浮力式密度比重計で測定することができる。また。金属粒子と絶縁粒子の真比重は、公知文献の値を用いることができる。ただし、金属粒子と絶縁粒子の真比重は、公知文献に記載されていない場合は例えば,比重既知の液体と混合して振動式密度比重計で混合物の比重を測定してその重量と体積の関係を計算し、算出することができる。
つぎに、接着層1を形成する樹脂ペーストについて説明する。本実施形態における樹脂ペーストは、(A)熱硬化性樹脂、(B)金属粒子、(C)絶縁粒子を含有している。
(A)熱硬化性樹脂は、加熱により3次元的網目構造を形成する一般的な熱硬化性樹脂である。この(A)熱硬化性樹脂は、特に限定されないが、液状樹脂組成物を形成する材料であることが好ましく、室温で液状であることが望ましい。例えば、シアネート樹脂、エポキシ樹脂、ラジカル重合性の炭素-炭素二重結合を1分子内に2つ以上有する樹脂などが挙げられる。
また、シアネート樹脂と、エポキシ樹脂、オキセタン樹脂、ラジカル重合性の炭素-炭素二重結合を1分子内に2つ以上有する樹脂などの他の樹脂と併用することも可能である。
(A)熱硬化性樹脂に係るエポキシ樹脂のうち、グリシジル基を1分子に2つ以上含む化合物としては、ビスフェノールA、ビスフェノールF、ビフェノールなどのビスフェノール化合物またはこれらの誘導体、水素添加ビスフェノールA、水素添加ビスフェノールF、水素添加ビフェノール、シクロヘキサンジオール、シクロヘキサンジメタノール、シジロヘキサンジエタノールなどの脂環構造を有するジオールまたはこれらの誘導体、ブタンジオール、ヘキサンジオール、オクタンジオール、ノナンジオール、デカンジオールなどの脂肪族ジオールまたはこれらの誘導体などをエポキシ化した2官能のもの、トリヒドロキシフェニルメタン骨格、アミノフェノール骨格を有する3官能のもの、フェノールノボラック樹脂、クレゾールノボラック樹脂、フェノールアラルキル樹脂、ビフェニルアラルキル樹脂、ナフトールアラルキル樹脂などをエポキシ化した多官能のものなどが挙げられるが、これらに限定されない。また樹脂組成物として室温で液状であることが好ましいので、(A)熱硬化性樹脂に係るエポキシ樹脂は、単独でまたは混合物として室温で液状のものが好ましい。ジオールまたはその誘導体をエポキシ化する方法としては、ジオールまたはその誘導体の2つの水酸基と、エピクロルヒドリンとを反応させて、グリシジルエーテルに変換することにより、エポキシ化する方法などが挙げられる。また、3官能以上のものについても、同様である。
通常行われるように反応性の希釈剤を使用することも可能である。反応性の希釈剤としては、フェニルグリシジルエーテル、ターシャリーブチルフェニルグリシジルエーテル、クレジルグリシジルエーテルなどの1官能の芳香族グリシジルエーテル類、脂肪族グリシジルエーテル類などが挙げられる。
(A)熱硬化性樹脂に係るエポキシ樹脂の硬化剤としては、例えば、脂肪族アミン、芳香族アミン、ジシアンジアミド、ジヒドラジド化合物、酸無水物、フェノール樹脂などが挙げられる。
エポキシ樹脂の硬化剤としての酸無水物としては、フタル酸無水物、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、4-メチルヘキサヒドロ無水フタル酸、エンドメチレンテトラヒドロフタル酸無水物、ドデセニルコハク酸無水物、無水マレイン酸などが挙げられる。
(A)熱硬化性樹脂に係るエポキシ樹脂の硬化剤としてのフェノール樹脂は1分子内にフェノール性水酸基を2つ以上有する化合物である。1分子内にフェノール性水酸基を1つ有する化合物の場合には架橋構造をとることができないため硬化物特性が悪化し使用できない。また、(A)熱硬化性樹脂に係るエポキシ樹脂の硬化剤としてのフェノール樹脂は、1分子内にフェノール性水酸基を2つ以上有していればよいが、1分子内にフェノール性水酸基を2以上5以下有することが好ましく、1分子内のフェノール性水酸基を2つまたは3つ有することがより好ましい。これより多い場合には分子量が大きくなりすぎるので樹脂ペーストの粘度が高くなりすぎるため好ましくない。このような化合物としては、ビスフェノールF、ビスフェノールA、ビスフェノールS、テトラメチルビスフェノールA、テトラメチルビスフェノールF、テトラメチルビスフェノールS、ジヒドロキシジフェニルエーテル、ジヒドロキシベンゾフェノン、テトラメチルビフェノール、エチリデンビスフェノール、メチルエチリデンビス(メチルフェノール)、シクロへキシリデンビスフェノール、ビフェノールなどのビスフェノール類およびその誘導体、トリ(ヒドロキシフェニル)メタン、トリ(ヒドロキシフェニル)エタンなどの3官能のフェノール類およびその誘導体、フェノールノボラック、クレゾールノボラックなどのフェノール類とホルムアルデヒドを反応することで得られる化合物で2核体または3核体がメインのものおよびその誘導体などが挙げられる。
以下に好ましいラジカル重合性の炭素-炭素二重結合を1分子内に2つ以上有する樹脂を例示するがこれらに限定されるわけではない。
これを満たす熱ラジカル重合開始剤の具体例としては、メチルエチルケトンパーオキサイド、メチルシクロヘキサノンパーオキサイド、メチルアセトアセテートパーオキサイド、アセチルアセトンパーオキサイド、1,1-ビス(t-ブチルパーオキシ)3,3,5-トリメチルシクロヘキサン、1,1-ビス(t-ヘキシルパーオキシ)シクロヘキサン、1,1-ビス(t-ヘキシルパーオキシ)3,3,5-トリメチルシクロヘキサン、1,1-ビス(t-ブチルパーオキシ)シクロヘキサン、2,2-ビス(4,4-ジ-t-ブチルパーオキシシクロヘキシル)プロパン、1,1-ビス(t-ブチルパーオキシ)シクロドデカン、n-ブチル4,4-ビス(t-ブチルパーオキシ)バレレート、2,2-ビス(t-ブチルパーオキシ)ブタン、1,1-ビス(t-ブチルパーオキシ)-2-メチルシクロヘキサン、t-ブチルハイドロパーオキサイド、P-メンタンハイドロパーオキサイド、1,1,3,3-テトラメチルブチルハイドロパーオキサイド、t-ヘキシルハイドロパーオキサイド、ジクミルパーオキサイド、2,5-ジメチル-2,5-ビス(t-ブチルパーオキシ)ヘキサン、α,α'-ビス(t-ブチルパーオキシ)ジイソプロピルベンゼン、t-ブチルクミルパーオキサイド、ジ-t-ブチルパーオキサイド、2,5-ジメチル-2,5-ビス(t-ブチルパーオキシ)-3-ヘキシン、イソブチリルパーオキサイド、3,5,5-トリメチルヘキサノイルパーオキサイド、オクタノイルパーオキサイド、ラウロイルパーオキサイド、桂皮酸パーオキサイド、m-トルオイルパーオキサイド、ベンゾイルパーオキサイド、ジイソプロピルパーオキシジカーボネート、ビス(4-t-ブチルシクロヘキシル)パーオキシジカーボネート、ジ-3-メトキシブチルパーオキシジカーボネート、ジ-2-エチルヘキシルパーオキシジカーボネート、ジ-sec-ブチルパーオキシジカーボネート、ジ(3-メチル-3-メトキシブチル)パーオキシジカーボネート、ジ(4-t-ブチルシクロヘキシル)パーオキシジカーボネート、α,α'-ビス(ネオデカノイルパーオキシ)ジイソプロピルベンゼン、クミルパーオキシネオデカノエート、1,1,3,3,-テトラメチルブチルパーオキシネオデカノエート、1-シクロヘキシル-1-メチルエチルパーオキシネオデカノエート、t-ヘキシルパーオキシネオデカノエート、t-ブチルパーオキシネオデカノエート、t-ヘキシルパーオキシピバレート、t-ブチルパーオキシピバレート、2,5-ジメチル-2,5-ビス(2-エチルヘキサノイルパーオキシ)ヘキサン、1,1,3,3-テトラメチルブチルパーオキシ-2-エチルへキサノエート、1-シクロヘキシル-1-メチルエチルパーオキシ-2-エチルヘキサノエート、t-ヘキシルパーオキシ-2-エチルヘキサノエート、t-ブチルパーオキシ-2-エチルヘキサノエート、t-ブチルパーオキシイソブチレート、t-ブチルパーオキシマレイックアシッド、t-ブチルパーオキシラウレート、t-ブチルパーオキシ-3,5,5-トリメチルヘキサノエート、t-ブチルパーオキシイソプロピルモノカーボネート、t-ブチルパーオキシ-2-エチルヘキシルモノカーボネート、2,5-ジメチル-2,5-ビス(ベンゾイルパーオキシ)ヘキサン、t-ブチルパーオキシアセテート、t-ヘキシルパーオキシベンゾエート、t-ブチルパーオキシ-m-トルオイルベンゾエート、t-ブチルパーオキシベンゾエート、ビス(t-ブチルパーオキシ)イソフタレート、t-ブチルパーオキシアリルモノカーボネート、3,3',4,4'-テトラ(t-ブチルパーオキシカルボニル)ベンゾフェノンなどが挙げられるが、これらは単独でまたは硬化性を制御するため2種類以上を混合して用いることもできる。また、上記のラジカル重合性の炭素-炭素二重結合を1分子内に2つ以上有する樹脂は、シアネート樹脂、エポキシ樹脂との併用も好ましい。
(B)金属粒子としては、形状が鱗片形状または楕円球形状であれば特に限定されないが、導電性や熱伝導性に優れるため、好ましくは銀粒子が挙げられる。また、銀以外には、例えば銅、金、ニッケル、パラジウム、アルミニウム、スズ、亜鉛などからなる金属粒子、またはこれら金属の合金粒子などから少なくとも1種以上を使用することができる。
ここで、銀粒子としては、銅、金、ニッケル、パラジウム、アルミニウム、スズ、亜鉛などからなる金属粒子の表面を銀で被覆した金属粒子を含む。
また、アスペクト比が上記上限を超えると、樹脂ペーストとして、マウント時の作業性が悪くなる可能性が生じるため、好ましくない。
ここで、(B)金属粒子のアスペクト比=(B)金属粒子の平均長径/(B)金属粒子の平均厚み、である。
(B)金属粒子の平均長径とは、フロー式粒子像分析装置による個数基準粒度分布における(B)金属粒子の1000個以上の平均長径で、(B)金属粒子の平均厚みとは、7mm×7mmのシリコンチップの上に、樹脂ペーストを適当量塗布し、その上に5mm×5mmのシリコンチップを樹脂ペースト層が約20μmになるようマウント後175℃、60分で硬化して、研磨により樹脂ペースト層の断面を出して、SEMにより(B)金属粒子50個の厚みを測定し、平均厚みとした。
(C)絶縁粒子としては、特に限定されないが、(B)金属粒子の配列に影響を与えるものであればどのようなものでも差し支えなく利用することができる。例えば、シリカ粒子やアルミナなどの無機フィラー、有機ポリマーなどの有機フィラーが挙げられる。
また、メジアン径d50が10μmを越えると塗布または硬化時に樹脂成分が流出しやすくなりブリードが発生するため好ましくない。また、メジアン径d50が10μm以下であると、(B)金属粒子を長軸が重力方向に対して平行になるようにより一層効率的に配列させることができる。
本実施形態における樹脂ペーストを用いて半導体装置10を作製する方法は、公知の方法を用いることができる。例えば、市販のダイボンダーを用いて、基材2の所定の部位に樹脂ペーストをディスペンス塗布した後、半導体素子3をマウントし、加熱硬化して接着層1を形成する。その後、ワイヤーボンディングして、エポキシ樹脂を用いて封止材層5を形成することによって半導体装置10を作製する。
(A)熱硬化性樹脂として、ビスフェノールF型エポキシ樹脂(日本化薬社製、RE-403S)と、ジアリルエステル樹脂(昭和電工社製、DA-101)を使用した。
硬化剤として、ジシアンジアミド(ADEKA社製、アデカハードナーEH-3636AS)を使用した。
硬化促進剤として、2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾール(四国化成工業社製、キュアゾール2P4MHZ)を使用した。
重合開始剤として、1,1-ジ(t-ブチルパーオキシ)シクロヘキサン(日本油脂社製、パーヘキサC(S))を使用した。
エポキシ希釈剤として、ターシャリーブチルフェニルグリシジルエーテル(日本化薬社製、TGE-H)を使用した。
アクリル希釈剤として、エチレングリコールジメタクリレート(共栄社化学社製、ライトエステルEG)を使用した。
カップリング剤として、ビス(トリメトキシシリルプロピル)テトラスルフィド(ダイソー社製、カブラス4)を使用した。
(B)金属粒子として、銀粒子1(福田金属箔粉工業社製、AgC-GS、メジアン径d50:8.0μm、アスペクト比4.1、平均長径4.6μm)を使用した。
(B)金属粒子として,銀粒子2(徳力化学研究所社製、TC-101、メジアン径d50:8.0μm、アスペクト比16.4、平均長径4.6μm)を使用した。
(C)絶縁粒子として、シリカ粒子A(MRCユニテック社製、QS-4F2、メジアン径d50:4.2μm)、シリカ粒子B(アドマテックス社製、SO-E2-24C、メジアン径d50:0.6μm)、シリカ粒子C(日本アエロジル社製、R-805、メジアン径d50:0.05μm)、アルミナ粒子(マイクロン社製、DAW-10、メジアン径d50:10μm)、有機ポリマー(日本触媒社製、MA-1004、メジアン径d50:5μm)を使用した。
上記の成分を表1の割合で配合し、3本ロールを用いて混練し、真空チャンバーにて2mmHgで15分間脱泡することで樹脂ペーストをそれぞれ作製した。配合割合は重量部である。
(評価試験)
上記より得られた樹脂ペーストについて以下の評価試験をそれぞれ行なった。評価結果を表1に示す。
上記の樹脂ペースト作製直後に、E型粘度計(3°コーン)を用いて25℃、2.5rpmでの値を測定した。作製直後の粘度が10Pa・s以上50Pa・s以下の範囲内の場合を○とし、範囲外の場合を×とした。
接続抵抗を測定できるように、上記より得られた樹脂ペーストをAgメッキした銅フレームと銅フレームの間に挟みこみ、175℃オーブン中60分硬化した。硬化後、抵抗率測定装置を用いて、樹脂ペーストを挟み込んだサンプルの電気抵抗値を測定し、接続距離と接続面積より、垂直(厚さ)方向の体積抵抗率を算出した。垂直(厚さ)方向の体積抵抗率が、1.0×10-1Ω・cm以下のものを○とし、1.0×10-1Ω・cmを超えるものを×とした。
金属粒子および絶縁粒子が接着層中で占める体積を接着層全体の体積でそれぞれ割った値である体積含有率aおよびbを、下記式(1)および式(2)よりそれぞれ算出した。
体積含有率a=(金属粒子の占める体積)
/[(金属粒子の占める体積)+(絶縁粒子の占める体積)+(樹脂成分の占める体積)] (1)
体積含有率b=(絶縁粒子の占める体積)
/[(金属粒子の占める体積)+(絶縁粒子の占める体積)+(樹脂成分の占める体積)] (2)
ここで、樹脂成分とは、接着層中の金属粒子および絶縁粒子以外の成分を表す。
また、樹脂成分の占める体積は、金属粒子および絶縁粒子以外の重量と比重から算出した。具体的には、樹脂成分の比重は、フィラー成分を含まない樹脂ペーストによって接着層を作製し、その接着層の比重を浮力式密度比重計で測定し,樹脂成分の比重として用いた。また、金属粒子の占める体積と絶縁粒子の占める体積も同様に重量と比重から算出した。金属粒子と絶縁粒子の真比重は、公知文献を参考にした。
2 基材
3 半導体素子
4 リード
5 封止材層
6 ボンディングワイヤ
7 パッド
10 半導体装置
Claims (8)
- 基材と、
半導体素子と、
前記基材および前記半導体素子の間に介在し、両者を接着する接着層と、
を備え、
前記接着層中に、金属粒子および絶縁粒子が分散しており、
前記金属粒子は鱗片形状または楕円球形状を有し、
前記接着層中の前記金属粒子の体積含有率をaとし、前記接着層中の前記絶縁粒子の体積含有率をbとしたとき、
前記接着層中のフィラーの体積含有率(a+b)が、0.20以上0.50以下であり、
前記フィラー中の前記金属粒子の体積含有率a/(a+b)が、0.03以上0.70以下である、半導体装置。 - 請求項1に記載の半導体装置において、
前記絶縁粒子のレーザー回折散乱式粒度分布測定法による個数基準粒度分布におけるメジアン径d50が、2μm以上10μm以下である、半導体装置。 - 請求項1または2に記載の半導体装置において、
フロー式粒子像分析装置による個数基準粒度分布における前記金属粒子の平均長径をDとしたとき、D×0.1<d50<D×2、である半導体装置。 - 請求項1乃至3いずれか一項に記載の半導体装置において、
前記絶縁粒子が、シリカ粒子、アルミナ、有機ポリマーから選ばれる一種以上を含む、半導体装置。 - 請求項1乃至4いずれか一項に記載の半導体装置において、
前記金属粒子が、銀粒子を含む、半導体装置。 - 請求項5に記載の半導体装置において、
前記銀粒子が、銀で被覆した金属粒子を含む、半導体装置。 - 請求項1乃至6いずれか一項に記載の半導体装置において、
前記基材が、リードフレームまたはBGA基板である、半導体装置。 - 請求項1乃至7いずれか一項に記載の半導体装置において、
前記半導体素子が、消費電力1.7W以上のパワーデバイスである、半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013518095A JP6269058B2 (ja) | 2011-05-31 | 2012-05-29 | 熱硬化性樹脂組成物 |
KR1020137031019A KR101912573B1 (ko) | 2011-05-31 | 2012-05-29 | 반도체 장치 |
SG2013084355A SG194956A1 (en) | 2011-05-31 | 2012-05-29 | Semiconductor device |
US14/119,259 US20140183715A1 (en) | 2011-05-31 | 2012-05-29 | Semiconductor device |
CN201280026102.XA CN103608907B (zh) | 2011-05-31 | 2012-05-29 | 半导体装置 |
EP12792349.8A EP2717301A4 (en) | 2011-05-31 | 2012-05-29 | SEMICONDUCTOR DEVICE |
KR1020187030492A KR101969278B1 (ko) | 2011-05-31 | 2012-05-29 | 반도체 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-121444 | 2011-05-31 | ||
JP2011121444 | 2011-05-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012165416A1 true WO2012165416A1 (ja) | 2012-12-06 |
Family
ID=47259270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/063729 WO2012165416A1 (ja) | 2011-05-31 | 2012-05-29 | 半導体装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20140183715A1 (ja) |
EP (1) | EP2717301A4 (ja) |
JP (1) | JP6269058B2 (ja) |
KR (2) | KR101969278B1 (ja) |
CN (1) | CN103608907B (ja) |
SG (1) | SG194956A1 (ja) |
TW (1) | TWI540590B (ja) |
WO (1) | WO2012165416A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018006521A (ja) * | 2016-06-30 | 2018-01-11 | 国立大学法人大阪大学 | 半導体装置 |
JP2018190540A (ja) * | 2017-04-28 | 2018-11-29 | 日亜化学工業株式会社 | 金属粉焼結ペースト及びその製造方法、ならびに導電性材料の製造方法 |
JPWO2018066368A1 (ja) * | 2016-10-06 | 2019-07-18 | 積水化学工業株式会社 | 導電材料、接続構造体及び接続構造体の製造方法 |
JP2020139020A (ja) * | 2019-02-27 | 2020-09-03 | ナミックス株式会社 | 導電性接着剤 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160033996A (ko) * | 2014-09-19 | 2016-03-29 | 삼성전기주식회사 | 무선 충전용 복합시트 및 이의 제조방법 |
SG11201708601UA (en) * | 2015-04-20 | 2017-11-29 | Agency Science Tech & Res | Conductive polymer composite as plastic solder |
KR102040529B1 (ko) * | 2016-08-19 | 2019-11-06 | 스미또모 베이크라이트 가부시키가이샤 | 다이 어태치 페이스트 및 반도체 장치 |
WO2018053802A1 (en) * | 2016-09-23 | 2018-03-29 | E. I. Du Pont De Nemours And Company | Electrically conductive adhesive |
JP7273302B2 (ja) | 2019-07-29 | 2023-05-15 | 株式会社ノーリツ | 給湯装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02269172A (ja) * | 1987-11-25 | 1990-11-02 | E I Du Pont De Nemours & Co | ダイ取付用接着剤組成物 |
JPH0589721A (ja) | 1991-09-30 | 1993-04-09 | Miyazaki Oki Electric Co Ltd | 導電性接着剤及びその導電性接着剤を使用した接着体 |
JPH07118616A (ja) | 1993-10-25 | 1995-05-09 | Sumitomo Bakelite Co Ltd | 導電性樹脂ペースト |
JPH07211145A (ja) * | 1993-12-16 | 1995-08-11 | Minnesota Mining & Mfg Co <3M> | 異方性導電膜 |
JP2010087235A (ja) * | 2008-09-30 | 2010-04-15 | Sumitomo Bakelite Co Ltd | 樹脂組成物および樹脂組成物を使用して作製した半導体装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0623349B2 (ja) * | 1986-01-30 | 1994-03-30 | 富士高分子工業株式会社 | 異方導電性接着剤 |
JPH0565456A (ja) * | 1991-09-09 | 1993-03-19 | Sumitomo Bakelite Co Ltd | 気密封止用樹脂ペースト |
US5686703A (en) * | 1994-12-16 | 1997-11-11 | Minnesota Mining And Manufacturing Company | Anisotropic, electrically conductive adhesive film |
JP2905121B2 (ja) * | 1995-07-19 | 1999-06-14 | ソニーケミカル株式会社 | 異方性導電接着フィルム |
JP4148754B2 (ja) * | 2002-11-08 | 2008-09-10 | 住友ベークライト株式会社 | 半導体用樹脂ペースト及び半導体装置 |
JP3991269B2 (ja) * | 2002-12-10 | 2007-10-17 | 日立化成工業株式会社 | 導電性ペースト及びそれを用いた半導体装置 |
JP2004304704A (ja) * | 2003-04-01 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 薄膜音響共振子、及び、薄膜音響共振子回路 |
US8088308B2 (en) * | 2004-03-19 | 2012-01-03 | Sumitomo Bakelite Company, Ltd. | Resin composition and semiconductor device produced by using the same |
JP2007149522A (ja) * | 2005-11-29 | 2007-06-14 | Sumitomo Metal Mining Co Ltd | 銀とカーボンナノチューブを含む導電性樹脂ペースト組成物およびこれを用いた半導体装置 |
WO2008032386A1 (fr) * | 2006-09-14 | 2008-03-20 | Sumitomo Bakelite Co., Ltd. | Structure de jonction, procédé de jonction, plaquette de câblage et son procédé de production |
TWI422661B (zh) * | 2006-10-30 | 2014-01-11 | Sumitomo Bakelite Co | 液狀樹脂組成物,附有黏著劑層之半導體晶圓,附有黏著劑層之半導體元件,半導體封裝,半導體元件之製造方法及半導體封裝之製造方法 |
US8592994B2 (en) * | 2006-12-05 | 2013-11-26 | Sumitomo Bakelite Co., Ltd. | Semiconductor package, core layer material, buildup layer material, and sealing resin composition |
US8119040B2 (en) * | 2008-09-29 | 2012-02-21 | Rockwell Collins, Inc. | Glass thick film embedded passive material |
JP5533663B2 (ja) * | 2008-11-06 | 2014-06-25 | 住友ベークライト株式会社 | 電子装置の製造方法 |
JP5342910B2 (ja) * | 2009-03-31 | 2013-11-13 | 三井化学株式会社 | 導電ペースト組成物および焼成体 |
JP5611537B2 (ja) * | 2009-04-28 | 2014-10-22 | 日立化成株式会社 | 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置 |
US8637379B2 (en) * | 2009-10-08 | 2014-01-28 | Infineon Technologies Ag | Device including a semiconductor chip and a carrier and fabrication method |
JP2011179101A (ja) * | 2010-03-04 | 2011-09-15 | Autonetworks Technologies Ltd | 防食剤、端子付き被覆電線およびワイヤーハーネス |
WO2011118147A1 (ja) * | 2010-03-25 | 2011-09-29 | 住友ベークライト株式会社 | 固形レゾール型フェノール樹脂およびその製造方法 |
TWI608062B (zh) * | 2011-05-31 | 2017-12-11 | 住友電木股份有限公司 | 樹脂組成物、使用它之半導體裝置及半導體裝置之製造方法 |
JP6015131B2 (ja) * | 2012-05-29 | 2016-10-26 | 住友ベークライト株式会社 | 樹脂組成物、それを用いた半導体装置 |
JP6111535B2 (ja) * | 2012-05-31 | 2017-04-12 | 住友ベークライト株式会社 | 熱硬化性樹脂組成物、半導体装置および半導体装置の製造方法 |
-
2012
- 2012-05-25 TW TW101118817A patent/TWI540590B/zh active
- 2012-05-29 EP EP12792349.8A patent/EP2717301A4/en not_active Withdrawn
- 2012-05-29 JP JP2013518095A patent/JP6269058B2/ja active Active
- 2012-05-29 WO PCT/JP2012/063729 patent/WO2012165416A1/ja active Application Filing
- 2012-05-29 US US14/119,259 patent/US20140183715A1/en not_active Abandoned
- 2012-05-29 KR KR1020187030492A patent/KR101969278B1/ko active IP Right Grant
- 2012-05-29 KR KR1020137031019A patent/KR101912573B1/ko active IP Right Grant
- 2012-05-29 SG SG2013084355A patent/SG194956A1/en unknown
- 2012-05-29 CN CN201280026102.XA patent/CN103608907B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02269172A (ja) * | 1987-11-25 | 1990-11-02 | E I Du Pont De Nemours & Co | ダイ取付用接着剤組成物 |
JPH0589721A (ja) | 1991-09-30 | 1993-04-09 | Miyazaki Oki Electric Co Ltd | 導電性接着剤及びその導電性接着剤を使用した接着体 |
JPH07118616A (ja) | 1993-10-25 | 1995-05-09 | Sumitomo Bakelite Co Ltd | 導電性樹脂ペースト |
JPH07211145A (ja) * | 1993-12-16 | 1995-08-11 | Minnesota Mining & Mfg Co <3M> | 異方性導電膜 |
JP2010087235A (ja) * | 2008-09-30 | 2010-04-15 | Sumitomo Bakelite Co Ltd | 樹脂組成物および樹脂組成物を使用して作製した半導体装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2717301A4 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018006521A (ja) * | 2016-06-30 | 2018-01-11 | 国立大学法人大阪大学 | 半導体装置 |
JPWO2018066368A1 (ja) * | 2016-10-06 | 2019-07-18 | 積水化学工業株式会社 | 導電材料、接続構造体及び接続構造体の製造方法 |
US11101052B2 (en) | 2016-10-06 | 2021-08-24 | Sekisui Chemical Co., Ltd. | Conductive material, connection structure and method for producing connection structure |
JP7046605B2 (ja) | 2016-10-06 | 2022-04-04 | 積水化学工業株式会社 | 導電材料、接続構造体及び接続構造体の製造方法 |
JP2018190540A (ja) * | 2017-04-28 | 2018-11-29 | 日亜化学工業株式会社 | 金属粉焼結ペースト及びその製造方法、ならびに導電性材料の製造方法 |
JP2021144942A (ja) * | 2017-04-28 | 2021-09-24 | 日亜化学工業株式会社 | 金属粉焼結ペースト及びその製造方法、ならびに導電性材料の製造方法 |
JP7174910B2 (ja) | 2017-04-28 | 2022-11-18 | 日亜化学工業株式会社 | 金属粉焼結ペースト及びその製造方法、ならびに導電性材料の製造方法 |
JP7436906B2 (ja) | 2017-04-28 | 2024-02-22 | 日亜化学工業株式会社 | 半導体装置 |
JP2020139020A (ja) * | 2019-02-27 | 2020-09-03 | ナミックス株式会社 | 導電性接着剤 |
WO2020175056A1 (ja) * | 2019-02-27 | 2020-09-03 | ナミックス株式会社 | 導電性接着剤 |
Also Published As
Publication number | Publication date |
---|---|
TW201250711A (en) | 2012-12-16 |
KR20180118802A (ko) | 2018-10-31 |
KR101969278B1 (ko) | 2019-04-15 |
US20140183715A1 (en) | 2014-07-03 |
SG194956A1 (en) | 2013-12-30 |
TWI540590B (zh) | 2016-07-01 |
JPWO2012165416A1 (ja) | 2015-02-23 |
KR20140027305A (ko) | 2014-03-06 |
CN103608907B (zh) | 2017-03-29 |
CN103608907A (zh) | 2014-02-26 |
KR101912573B1 (ko) | 2018-10-29 |
JP6269058B2 (ja) | 2018-01-31 |
EP2717301A1 (en) | 2014-04-09 |
EP2717301A4 (en) | 2015-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6269058B2 (ja) | 熱硬化性樹脂組成物 | |
WO2012165375A1 (ja) | 樹脂組成物、それを用いた半導体装置および半導体装置の製造方法 | |
JP5266719B2 (ja) | 樹脂組成物及び樹脂組成物を使用して作製した半導体装置 | |
JP5332464B2 (ja) | 樹脂組成物および樹脂組成物を使用して作製した半導体装置 | |
JP5061939B2 (ja) | 熱伝導性樹脂組成物、接着剤層、及びそれらを用いて作製した半導体装置。 | |
JP6119603B2 (ja) | 半導体装置 | |
JP5428134B2 (ja) | 液状樹脂組成物および該液状樹脂組成物を使用して作製した半導体装置 | |
JP6700653B2 (ja) | 半導体接着用樹脂組成物及び半導体装置 | |
JP2009209246A (ja) | 樹脂組成物、接着剤層、及びそれらを用いて作製した半導体装置 | |
JP5266774B2 (ja) | 樹脂組成物およびそれを用いて作製した半導体装置または回路基板 | |
JP5396914B2 (ja) | 樹脂組成物、および樹脂組成物を用いて作製した半導体装置 | |
JP6015131B2 (ja) | 樹脂組成物、それを用いた半導体装置 | |
JP6420121B2 (ja) | 半導体接着用樹脂組成物及び半導体装置 | |
JP6111535B2 (ja) | 熱硬化性樹脂組成物、半導体装置および半導体装置の製造方法 | |
JP2012253088A (ja) | 半導体装置 | |
JP5375067B2 (ja) | 樹脂組成物および樹脂組成物を使用して作製した半導体装置 | |
JP6119094B2 (ja) | 半導体装置 | |
JP2017119880A (ja) | 熱硬化性樹脂組成物および半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12792349 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013518095 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14119259 Country of ref document: US Ref document number: 2012792349 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20137031019 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |