SG144781A1 - Amplifier and communication apparatus - Google Patents

Amplifier and communication apparatus

Info

Publication number
SG144781A1
SG144781A1 SG200700818-8A SG2007008188A SG144781A1 SG 144781 A1 SG144781 A1 SG 144781A1 SG 2007008188 A SG2007008188 A SG 2007008188A SG 144781 A1 SG144781 A1 SG 144781A1
Authority
SG
Singapore
Prior art keywords
amplifier
band
output terminal
wide
resonant circuit
Prior art date
Application number
SG200700818-8A
Other languages
English (en)
Inventor
Sachio Iida
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SG144781A1 publication Critical patent/SG144781A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/306—Indexing scheme relating to amplifiers the loading circuit of an amplifying stage being a parallel resonance circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
SG200700818-8A 2003-12-10 2004-11-15 Amplifier and communication apparatus SG144781A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003412310A JP2005175819A (ja) 2003-12-10 2003-12-10 増幅器並びに通信装置

Publications (1)

Publication Number Publication Date
SG144781A1 true SG144781A1 (en) 2008-08-28

Family

ID=34675021

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200700818-8A SG144781A1 (en) 2003-12-10 2004-11-15 Amplifier and communication apparatus

Country Status (7)

Country Link
US (1) US8019306B2 (zh)
EP (1) EP1693956B1 (zh)
JP (1) JP2005175819A (zh)
KR (1) KR101091431B1 (zh)
CN (1) CN1886892B (zh)
SG (1) SG144781A1 (zh)
WO (1) WO2005057780A1 (zh)

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EP1833162A1 (en) * 2006-03-06 2007-09-12 Seiko Epson Corporation Low noise amplifiers for low-power impulse radio ultra-wideband receivers
WO2008035480A1 (fr) * 2006-09-20 2008-03-27 Panasonic Corporation Amplificateur à faible bruit et système de communication sans fil
JP2008103889A (ja) * 2006-10-18 2008-05-01 Niigata Seimitsu Kk 低雑音増幅器
US7949322B2 (en) * 2007-03-09 2011-05-24 Qualcomm, Incorporated Frequency selective amplifier with wide-band impedance and noise matching
EP1993201A1 (en) * 2007-05-18 2008-11-19 Interuniversitair Microelektronica Centrum Vzw Switchable multiband LNA design
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US8340223B2 (en) 2007-10-05 2012-12-25 Nec Corporation Receiver and wireless communication system equipped with the same
JP5246257B2 (ja) * 2008-04-24 2013-07-24 日本電気株式会社 増幅器
JP5245887B2 (ja) * 2009-02-09 2013-07-24 富士通セミコンダクター株式会社 増幅器
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US8319562B2 (en) * 2009-08-26 2012-11-27 Qualcomm Incorporated System and method for amplifying a signal using multiple amplification stages sharing a common bias current
JP5267407B2 (ja) 2009-10-02 2013-08-21 富士通株式会社 増幅回路及び通信装置
JP2012054685A (ja) * 2010-08-31 2012-03-15 Asahi Kasei Electronics Co Ltd 広帯域増幅器
CN102594353B (zh) * 2011-01-13 2015-04-01 中兴通讯股份有限公司 一种数模转换器及逐次逼近存储转换器
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JP5808699B2 (ja) * 2012-03-05 2015-11-10 ルネサスエレクトロニクス株式会社 高周波増幅器
CN103178797A (zh) * 2013-03-18 2013-06-26 成都龙腾中远信息技术有限公司 组合型功率放大器
WO2014190062A1 (en) * 2013-05-21 2014-11-27 The Regents Of The University Of Michigan Negative group delay circuit
WO2014207499A1 (en) * 2013-06-27 2014-12-31 Freescale Semiconductor, Inc. Integrated matching circuit for a high frequency amplifier
CA2906268C (en) 2014-09-29 2020-04-14 The Governors Of The University Of Alberta Apparatus and method for high resolution complex permittivity sensing using high q microwave sensors for lossy or non-lossy mediums and samples
RU2571579C1 (ru) * 2014-11-11 2015-12-20 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Донской Государственный Технический Университет" (Дгту) Прецизионный операционный усилитель для радиационно-стойкого биполярно-полевого техпроцесса
CN115208333A (zh) 2016-05-02 2022-10-18 瑞典爱立信有限公司 放大器
US10014844B1 (en) * 2016-12-30 2018-07-03 Texas Instruments Incorporated Band pass filter utilizing parallel resonance of BAW resonator
JP7325956B2 (ja) * 2018-12-25 2023-08-15 ヌヴォトンテクノロジージャパン株式会社 高周波電力増幅器
CN111682859A (zh) * 2020-07-09 2020-09-18 西安电子科技大学 一种低功耗ab类cmos的功率放大器
CN112543003B (zh) * 2020-11-20 2023-07-25 北京昂瑞微电子技术股份有限公司 一种低噪声系数超宽带的低噪声放大器
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Also Published As

Publication number Publication date
CN1886892A (zh) 2006-12-27
EP1693956A1 (en) 2006-08-23
JP2005175819A (ja) 2005-06-30
KR20060121156A (ko) 2006-11-28
EP1693956B1 (en) 2013-01-23
EP1693956A4 (en) 2008-10-29
CN1886892B (zh) 2010-10-13
US8019306B2 (en) 2011-09-13
WO2005057780A1 (ja) 2005-06-23
US20070139117A1 (en) 2007-06-21
KR101091431B1 (ko) 2011-12-07

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