SG133600A1 - Multiple frequency plasma etch reactor - Google Patents

Multiple frequency plasma etch reactor

Info

Publication number
SG133600A1
SG133600A1 SG200704527-1A SG2007045271A SG133600A1 SG 133600 A1 SG133600 A1 SG 133600A1 SG 2007045271 A SG2007045271 A SG 2007045271A SG 133600 A1 SG133600 A1 SG 133600A1
Authority
SG
Singapore
Prior art keywords
multiple frequency
plasma etch
frequency plasma
etch reactor
reactor
Prior art date
Application number
SG200704527-1A
Other languages
English (en)
Inventor
Rajinder Dhindsa
Reza S M Sadjadi
Felix Kozakevich
Dave Trussell
Lumin Li
Eric Lenz
Camelia Rusu
Mukund Srinivasan
Aaron Eppler
Jim Tietz
Jeffrey Marks
Original Assignee
Lam Res Corp Us
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34194363&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG133600(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lam Res Corp Us filed Critical Lam Res Corp Us
Publication of SG133600A1 publication Critical patent/SG133600A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)
SG200704527-1A 2003-08-22 2004-08-20 Multiple frequency plasma etch reactor SG133600A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/645,665 US7405521B2 (en) 2003-08-22 2003-08-22 Multiple frequency plasma processor method and apparatus

Publications (1)

Publication Number Publication Date
SG133600A1 true SG133600A1 (en) 2007-07-30

Family

ID=34194363

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200704527-1A SG133600A1 (en) 2003-08-22 2004-08-20 Multiple frequency plasma etch reactor

Country Status (8)

Country Link
US (1) US7405521B2 (ko)
EP (2) EP2533268B1 (ko)
JP (2) JP5265871B2 (ko)
KR (1) KR101322552B1 (ko)
CN (3) CN1871695B (ko)
SG (1) SG133600A1 (ko)
TW (1) TWI390583B (ko)
WO (1) WO2005020264A2 (ko)

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CN1973364A (zh) 2007-05-30
EP2533268B1 (en) 2014-03-26
JP2012015534A (ja) 2012-01-19
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WO2005020264A3 (en) 2006-03-23
US7405521B2 (en) 2008-07-29
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TW200520012A (en) 2005-06-16
CN1871695B (zh) 2010-12-29
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WO2005020264A2 (en) 2005-03-03
US20050039682A1 (en) 2005-02-24
TWI390583B (zh) 2013-03-21
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CN101656200A (zh) 2010-02-24
CN101656200B (zh) 2012-06-13

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