SG11202009172VA - Mask blank, phase shift mask, and method for manufacturing semiconductor device - Google Patents

Mask blank, phase shift mask, and method for manufacturing semiconductor device

Info

Publication number
SG11202009172VA
SG11202009172VA SG11202009172VA SG11202009172VA SG11202009172VA SG 11202009172V A SG11202009172V A SG 11202009172VA SG 11202009172V A SG11202009172V A SG 11202009172VA SG 11202009172V A SG11202009172V A SG 11202009172VA SG 11202009172V A SG11202009172V A SG 11202009172VA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
phase shift
manufacturing semiconductor
mask blank
Prior art date
Application number
SG11202009172VA
Other languages
English (en)
Inventor
Hitoshi Maeda
Osamu Nozawa
Yasutaka Horigome
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202009172VA publication Critical patent/SG11202009172VA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG11202009172VA 2018-03-26 2019-03-15 Mask blank, phase shift mask, and method for manufacturing semiconductor device SG11202009172VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018058004 2018-03-26
PCT/JP2019/010772 WO2019188397A1 (ja) 2018-03-26 2019-03-15 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
SG11202009172VA true SG11202009172VA (en) 2020-10-29

Family

ID=68058151

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009172VA SG11202009172VA (en) 2018-03-26 2019-03-15 Mask blank, phase shift mask, and method for manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US20210026235A1 (https=)
JP (1) JP7201502B2 (https=)
KR (1) KR20200133377A (https=)
CN (1) CN111902772A (https=)
SG (1) SG11202009172VA (https=)
TW (1) TWI854972B (https=)
WO (1) WO2019188397A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7296927B2 (ja) * 2020-09-17 2023-06-23 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法、及び位相シフトマスク
JP7543116B2 (ja) * 2020-12-09 2024-09-02 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
JP7640293B2 (ja) * 2021-03-09 2025-03-05 テクセンドフォトマスク株式会社 位相シフトマスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び位相シフトマスクの修正方法
CN115202146A (zh) * 2021-04-14 2022-10-18 上海传芯半导体有限公司 移相掩膜版及其制作方法
JP7793450B2 (ja) * 2022-03-31 2026-01-05 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3115185B2 (ja) 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
US6274280B1 (en) 1999-01-14 2001-08-14 E.I. Du Pont De Nemours And Company Multilayer attenuating phase-shift masks
TWI227810B (en) * 2002-12-26 2005-02-11 Hoya Corp Lithography mask blank
JP2010217514A (ja) 2009-03-17 2010-09-30 Toppan Printing Co Ltd フォトマスクの製造方法
JP6005530B2 (ja) * 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
JP5686216B1 (ja) * 2013-08-20 2015-03-18 大日本印刷株式会社 マスクブランクス、位相シフトマスク及びその製造方法
JP6264238B2 (ja) * 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
TW201537281A (zh) * 2014-03-18 2015-10-01 Hoya Corp 光罩基底、相偏移光罩及半導體裝置之製造方法
JP2016035559A (ja) * 2014-08-04 2016-03-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
KR101810805B1 (ko) * 2014-12-26 2017-12-19 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6477159B2 (ja) * 2015-03-31 2019-03-06 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクス及びハーフトーン位相シフトマスクブランクスの製造方法
JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP6341129B2 (ja) * 2015-03-31 2018-06-13 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
JP6058757B1 (ja) * 2015-07-15 2017-01-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6558326B2 (ja) * 2016-08-23 2019-08-14 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置

Also Published As

Publication number Publication date
CN111902772A (zh) 2020-11-06
US20210026235A1 (en) 2021-01-28
JP7201502B2 (ja) 2023-01-10
JP2019174806A (ja) 2019-10-10
WO2019188397A1 (ja) 2019-10-03
TW201940961A (zh) 2019-10-16
TWI854972B (zh) 2024-09-11
KR20200133377A (ko) 2020-11-27

Similar Documents

Publication Publication Date Title
SG11202007975QA (en) Mask blank, phase shift mask, and method for manufacturing semiconductor device
SG11202106508PA (en) Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
SG11202011370VA (en) Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
SG11201912030PA (en) Mask blank, phase shift mask and method for manufacturing semiconductor device
SG10201911774WA (en) Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
SG11201800548TA (en) Mask blank, phase shift mask, and method for manufacturing semiconductor device
SG11202011373SA (en) Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
SG11202007994YA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202007542WA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG10201911903XA (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG11201807251SA (en) Reflective mask blank, reflective mask and method of manufacturing semiconductor device
SG11202009172VA (en) Mask blank, phase shift mask, and method for manufacturing semiconductor device
SG11202010535YA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202109059SA (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG11202002928WA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202107980SA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG11202101338UA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG11202004856XA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG10202000604QA (en) Mask blank, transfer mask, and method of manufacturing semiconductor device
SG11202010537VA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202110115VA (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG11202109240PA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG11202002544SA (en) Mask blank, transfer mask, and method for manufacturing semiconductor device
SG10201602448YA (en) Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Pattern Exposure Method
SG11202102270QA (en) Mask blank, transfer mask, and method of manufacturing semiconductor device