CN111902772A - 掩模坯料、相移掩模及半导体器件的制造方法 - Google Patents

掩模坯料、相移掩模及半导体器件的制造方法 Download PDF

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Publication number
CN111902772A
CN111902772A CN201980022136.3A CN201980022136A CN111902772A CN 111902772 A CN111902772 A CN 111902772A CN 201980022136 A CN201980022136 A CN 201980022136A CN 111902772 A CN111902772 A CN 111902772A
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CN
China
Prior art keywords
phase shift
film
layer
upper layer
shift film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980022136.3A
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English (en)
Chinese (zh)
Inventor
前田仁
野泽顺
堀込康隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN111902772A publication Critical patent/CN111902772A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN201980022136.3A 2018-03-26 2019-03-15 掩模坯料、相移掩模及半导体器件的制造方法 Pending CN111902772A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018058004 2018-03-26
JP2018-058004 2018-03-26
PCT/JP2019/010772 WO2019188397A1 (ja) 2018-03-26 2019-03-15 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
CN111902772A true CN111902772A (zh) 2020-11-06

Family

ID=68058151

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980022136.3A Pending CN111902772A (zh) 2018-03-26 2019-03-15 掩模坯料、相移掩模及半导体器件的制造方法

Country Status (7)

Country Link
US (1) US20210026235A1 (https=)
JP (1) JP7201502B2 (https=)
KR (1) KR20200133377A (https=)
CN (1) CN111902772A (https=)
SG (1) SG11202009172VA (https=)
TW (1) TWI854972B (https=)
WO (1) WO2019188397A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7296927B2 (ja) * 2020-09-17 2023-06-23 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法、及び位相シフトマスク
JP7543116B2 (ja) * 2020-12-09 2024-09-02 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
JP7640293B2 (ja) * 2021-03-09 2025-03-05 テクセンドフォトマスク株式会社 位相シフトマスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び位相シフトマスクの修正方法
CN115202146A (zh) * 2021-04-14 2022-10-18 上海传芯半导体有限公司 移相掩膜版及其制作方法
JP7793450B2 (ja) * 2022-03-31 2026-01-05 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
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CN105334693A (zh) * 2014-08-04 2016-02-17 信越化学工业株式会社 半色调相移光掩模坯料及其制备方法
CN106019810A (zh) * 2015-03-31 2016-10-12 信越化学工业株式会社 半色调相移掩模坯和半色调相移掩模
CN106133599A (zh) * 2013-08-20 2016-11-16 大日本印刷株式会社 掩模坯料、相位位移掩模及其制造方法
US20170285458A1 (en) * 2014-12-26 2017-10-05 Hoya Corporation Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

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JP3115185B2 (ja) 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
US6274280B1 (en) 1999-01-14 2001-08-14 E.I. Du Pont De Nemours And Company Multilayer attenuating phase-shift masks
TWI227810B (en) * 2002-12-26 2005-02-11 Hoya Corp Lithography mask blank
JP2010217514A (ja) 2009-03-17 2010-09-30 Toppan Printing Co Ltd フォトマスクの製造方法
JP6005530B2 (ja) * 2013-01-15 2016-10-12 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
JP6264238B2 (ja) * 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
TW201537281A (zh) * 2014-03-18 2015-10-01 Hoya Corp 光罩基底、相偏移光罩及半導體裝置之製造方法
JP6477159B2 (ja) * 2015-03-31 2019-03-06 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクス及びハーフトーン位相シフトマスクブランクスの製造方法
JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP6058757B1 (ja) * 2015-07-15 2017-01-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6558326B2 (ja) * 2016-08-23 2019-08-14 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106133599A (zh) * 2013-08-20 2016-11-16 大日本印刷株式会社 掩模坯料、相位位移掩模及其制造方法
CN105334693A (zh) * 2014-08-04 2016-02-17 信越化学工业株式会社 半色调相移光掩模坯料及其制备方法
US20170285458A1 (en) * 2014-12-26 2017-10-05 Hoya Corporation Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
CN106019810A (zh) * 2015-03-31 2016-10-12 信越化学工业株式会社 半色调相移掩模坯和半色调相移掩模

Also Published As

Publication number Publication date
US20210026235A1 (en) 2021-01-28
SG11202009172VA (en) 2020-10-29
JP7201502B2 (ja) 2023-01-10
JP2019174806A (ja) 2019-10-10
WO2019188397A1 (ja) 2019-10-03
TW201940961A (zh) 2019-10-16
TWI854972B (zh) 2024-09-11
KR20200133377A (ko) 2020-11-27

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Application publication date: 20201106