SG11201802667PA - Biasable flux optimizer/collimator for pvd sputter chamber - Google Patents
Biasable flux optimizer/collimator for pvd sputter chamberInfo
- Publication number
- SG11201802667PA SG11201802667PA SG11201802667PA SG11201802667PA SG11201802667PA SG 11201802667P A SG11201802667P A SG 11201802667PA SG 11201802667P A SG11201802667P A SG 11201802667PA SG 11201802667P A SG11201802667P A SG 11201802667PA SG 11201802667P A SG11201802667P A SG 11201802667PA
- Authority
- SG
- Singapore
- Prior art keywords
- biasable
- collimator
- sputter chamber
- pvd sputter
- flux optimizer
- Prior art date
Links
- 230000004907 flux Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562246967P | 2015-10-27 | 2015-10-27 | |
| PCT/US2016/053970 WO2017074633A1 (en) | 2015-10-27 | 2016-09-27 | Biasable flux optimizer/collimator for pvd sputter chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201802667PA true SG11201802667PA (en) | 2018-05-30 |
Family
ID=58562020
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201802667PA SG11201802667PA (en) | 2015-10-27 | 2016-09-27 | Biasable flux optimizer/collimator for pvd sputter chamber |
| SG10202003396PA SG10202003396PA (en) | 2015-10-27 | 2016-09-27 | Biasable flux optimizer/collimator for pvd sputter chamber |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202003396PA SG10202003396PA (en) | 2015-10-27 | 2016-09-27 | Biasable flux optimizer/collimator for pvd sputter chamber |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9960024B2 (enExample) |
| EP (3) | EP3369108B1 (enExample) |
| JP (3) | JP7034912B2 (enExample) |
| KR (2) | KR20240127488A (enExample) |
| CN (6) | CN118127471A (enExample) |
| SG (2) | SG11201802667PA (enExample) |
| TW (4) | TWI669752B (enExample) |
| WO (1) | WO2017074633A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240127488A (ko) | 2015-10-27 | 2024-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 |
| CN109390222B (zh) * | 2017-08-08 | 2021-01-05 | 宁波江丰电子材料股份有限公司 | 准直器检具及其使用方法 |
| USD859333S1 (en) | 2018-03-16 | 2019-09-10 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| USD858468S1 (en) | 2018-03-16 | 2019-09-03 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| US20190353919A1 (en) * | 2018-05-21 | 2019-11-21 | Applied Materials, Inc. | Multi-zone collimator for selective pvd |
| CN109300764A (zh) * | 2018-10-31 | 2019-02-01 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
| WO2020088415A1 (zh) * | 2018-10-31 | 2020-05-07 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
| USD937329S1 (en) | 2020-03-23 | 2021-11-30 | Applied Materials, Inc. | Sputter target for a physical vapor deposition chamber |
| USD998575S1 (en) | 2020-04-07 | 2023-09-12 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition (PVD) chamber |
| CN112011776B (zh) * | 2020-08-28 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其工艺腔室 |
| US11851751B2 (en) * | 2021-07-23 | 2023-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
| USD1009816S1 (en) | 2021-08-29 | 2024-01-02 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| USD997111S1 (en) | 2021-12-15 | 2023-08-29 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition (PVD) chamber |
| USD1038901S1 (en) * | 2022-01-12 | 2024-08-13 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| USD1026054S1 (en) * | 2022-04-22 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| CN115449762A (zh) * | 2022-08-22 | 2022-12-09 | 无锡尚积半导体科技有限公司 | 一种用于磁控溅射设备的准直器及磁控溅射设备 |
| USD1025935S1 (en) * | 2022-11-03 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1024149S1 (en) * | 2022-12-16 | 2024-04-23 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1026839S1 (en) * | 2022-12-16 | 2024-05-14 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| USD1025936S1 (en) * | 2022-12-16 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
| CN119020736A (zh) * | 2023-05-24 | 2024-11-26 | 北京北方华创微电子装备有限公司 | 物理气相沉积设备的准直装置及物理气相沉积设备 |
| US20250146119A1 (en) * | 2023-11-07 | 2025-05-08 | Applied Materials, Inc. | Dual collimator physical vapor depositions processing chamber |
| WO2025181241A1 (en) * | 2024-02-28 | 2025-09-04 | Université De Namur | A method for manufacturing coated articles |
| USD1103950S1 (en) * | 2024-03-21 | 2025-12-02 | Applied Materials, Inc. | Process chamber collimator |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
| JPH06295903A (ja) * | 1993-02-09 | 1994-10-21 | Matsushita Electron Corp | スパッタリング装置 |
| US5362372A (en) | 1993-06-11 | 1994-11-08 | Applied Materials, Inc. | Self cleaning collimator |
| US5380414A (en) | 1993-06-11 | 1995-01-10 | Applied Materials, Inc. | Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor |
| US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
| US5431799A (en) | 1993-10-29 | 1995-07-11 | Applied Materials, Inc. | Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency |
| KR970009828B1 (en) | 1994-02-23 | 1997-06-18 | Sansung Electronics Co Ltd | Fabrication method of collimator |
| EP0703598A1 (en) * | 1994-09-26 | 1996-03-27 | Applied Materials, Inc. | Electrode between sputtering target and workpiece |
| JPH08260139A (ja) * | 1995-03-23 | 1996-10-08 | Sony Corp | 成膜用コリメータ、成膜装置及び電子装置の製造方法 |
| KR970017999A (ko) * | 1995-09-29 | 1997-04-30 | 김광호 | 개선된 구조의 콜리메이터를 갖는 스퍼터링장치 |
| US5650052A (en) | 1995-10-04 | 1997-07-22 | Edelstein; Sergio | Variable cell size collimator |
| KR970017999U (ko) | 1995-10-23 | 1997-05-23 | 전자동세탁기 | |
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| JPWO2004047160A1 (ja) | 2002-11-20 | 2006-03-23 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP2007273490A (ja) | 2004-03-30 | 2007-10-18 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| EP1710324B1 (en) * | 2005-04-08 | 2008-12-03 | STMicroelectronics S.r.l. | PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device |
| US7355192B2 (en) * | 2006-03-30 | 2008-04-08 | Intel Corporation | Adjustable suspension assembly for a collimating lattice |
| KR101571558B1 (ko) | 2008-04-16 | 2015-11-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 프로세싱 증착 차폐 컴포넌트들 |
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| US9316413B2 (en) | 2008-06-11 | 2016-04-19 | Honeywell International Inc. | Selectable efficiency versus comfort for modulating furnace |
| KR20160134873A (ko) | 2008-06-17 | 2016-11-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 균일한 증착을 위한 장치 및 방법 |
| US20090308739A1 (en) * | 2008-06-17 | 2009-12-17 | Applied Materials, Inc. | Wafer processing deposition shielding components |
| CN102301451A (zh) * | 2009-04-24 | 2011-12-28 | 应用材料公司 | 晶圆处理沉积屏蔽部件 |
| WO2013136384A1 (ja) * | 2012-03-14 | 2013-09-19 | キヤノンアネルバ株式会社 | 締結部材および真空装置 |
| US9831074B2 (en) | 2013-10-24 | 2017-11-28 | Applied Materials, Inc. | Bipolar collimator utilized in a physical vapor deposition chamber |
| US9543126B2 (en) * | 2014-11-26 | 2017-01-10 | Applied Materials, Inc. | Collimator for use in substrate processing chambers |
| KR20240127488A (ko) * | 2015-10-27 | 2024-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 |
-
2016
- 2016-09-27 KR KR1020247026805A patent/KR20240127488A/ko active Pending
- 2016-09-27 EP EP16860473.4A patent/EP3369108B1/en active Active
- 2016-09-27 EP EP21188409.3A patent/EP3920210B1/en active Active
- 2016-09-27 SG SG11201802667PA patent/SG11201802667PA/en unknown
- 2016-09-27 US US15/277,674 patent/US9960024B2/en active Active
- 2016-09-27 WO PCT/US2016/053970 patent/WO2017074633A1/en not_active Ceased
- 2016-09-27 KR KR1020187014899A patent/KR102695398B1/ko active Active
- 2016-09-27 SG SG10202003396PA patent/SG10202003396PA/en unknown
- 2016-09-27 EP EP23175161.1A patent/EP4235744A3/en active Pending
- 2016-09-27 JP JP2018521365A patent/JP7034912B2/ja active Active
- 2016-10-27 CN CN202410177120.2A patent/CN118127471A/zh active Pending
- 2016-10-27 CN CN201621180242.4U patent/CN206418192U/zh active Active
- 2016-10-27 TW TW105134741A patent/TWI669752B/zh active
- 2016-10-27 TW TW108124712A patent/TWI702636B/zh active
- 2016-10-27 CN CN202010731212.2A patent/CN112030123A/zh active Pending
- 2016-10-27 CN CN201910698016.7A patent/CN110438464A/zh active Pending
- 2016-10-27 TW TW109124539A patent/TWI761889B/zh active
- 2016-10-27 CN CN202410177114.7A patent/CN118127470A/zh active Pending
- 2016-10-27 TW TW111114403A patent/TWI839710B/zh active
- 2016-10-27 CN CN201610958470.8A patent/CN106987815A/zh active Pending
-
2018
- 2018-03-29 US US15/940,398 patent/US10347474B2/en active Active
-
2019
- 2019-05-30 US US16/426,964 patent/US10727033B2/en active Active
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2020
- 2020-06-24 US US16/910,151 patent/US11309169B2/en active Active
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2022
- 2022-03-02 JP JP2022031654A patent/JP7504938B2/ja active Active
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2024
- 2024-06-12 JP JP2024095005A patent/JP2024127896A/ja active Pending
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