PL3172354T3 - Target do rozpylania na bazie stopu srebra - Google Patents

Target do rozpylania na bazie stopu srebra

Info

Publication number
PL3172354T3
PL3172354T3 PL15739216T PL15739216T PL3172354T3 PL 3172354 T3 PL3172354 T3 PL 3172354T3 PL 15739216 T PL15739216 T PL 15739216T PL 15739216 T PL15739216 T PL 15739216T PL 3172354 T3 PL3172354 T3 PL 3172354T3
Authority
PL
Poland
Prior art keywords
silver
sputtering target
alloy based
based sputtering
alloy
Prior art date
Application number
PL15739216T
Other languages
English (en)
Inventor
Martin Schlott
Andreas Herzog
Thomas Scholl
Uwe Konietzka
Original Assignee
Materion Advanced Materials Germany Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materion Advanced Materials Germany Gmbh filed Critical Materion Advanced Materials Germany Gmbh
Publication of PL3172354T3 publication Critical patent/PL3172354T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
PL15739216T 2014-07-25 2015-07-10 Target do rozpylania na bazie stopu srebra PL3172354T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014214683.6A DE102014214683A1 (de) 2014-07-25 2014-07-25 Sputtertarget auf der Basis einer Silberlegierung
EP15739216.8A EP3172354B1 (de) 2014-07-25 2015-07-10 Sputtertarget auf der basis einer silberlegierung
PCT/EP2015/065800 WO2016012268A1 (de) 2014-07-25 2015-07-10 Sputtertarget auf der basis einer silberlegierung

Publications (1)

Publication Number Publication Date
PL3172354T3 true PL3172354T3 (pl) 2018-11-30

Family

ID=53682664

Family Applications (1)

Application Number Title Priority Date Filing Date
PL15739216T PL3172354T3 (pl) 2014-07-25 2015-07-10 Target do rozpylania na bazie stopu srebra

Country Status (7)

Country Link
US (1) US20170166999A1 (pl)
EP (1) EP3172354B1 (pl)
CN (1) CN106661720B (pl)
DE (1) DE102014214683A1 (pl)
PL (1) PL3172354T3 (pl)
TW (1) TWI608108B (pl)
WO (1) WO2016012268A1 (pl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019131850A (ja) * 2018-01-30 2019-08-08 三菱マテリアル株式会社 積層膜、及び、Ａｇ合金スパッタリングターゲット
CN108531864B (zh) * 2018-06-26 2020-10-23 济源豫金靶材科技有限公司 一种银蒸镀材料及其制备方法
CN111215839A (zh) * 2018-11-23 2020-06-02 宁波江丰电子材料股份有限公司 镀膜材料的成型方法
CN115044877A (zh) * 2022-06-29 2022-09-13 烟台招金励福贵金属股份有限公司 一种银基三元合金靶材的制备方法
TWI842169B (zh) * 2022-10-31 2024-05-11 光洋應用材料科技股份有限公司 形成半導體接合結構的保護層薄膜、形成其之濺鍍靶材、半導體接合結構及半導體接合方法
CN116815089B (zh) * 2023-07-03 2026-03-17 福建阿石创新材料股份有限公司 一种超细纳米晶银合金及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6351446B1 (en) * 1998-10-02 2002-02-26 Unaxis Balzers Aktiengesellschaft Optical data storage disk
JP4007702B2 (ja) 1998-10-05 2007-11-14 株式会社フルヤ金属 薄膜形成用スパッタリングターゲット材およびそれを用いて形成されて成る薄膜、および光学記録媒体
JP4247863B2 (ja) * 1999-07-12 2009-04-02 ソニー株式会社 電子部品用金属材料、電子部品用配線材料、電子部品用電極材料、電子部品、電子機器、金属材料の加工方法及び電子光学部品
US6972076B1 (en) * 1999-10-29 2005-12-06 Sony Corporation Thin film formation use sputtering target material, thin film formed using same, and optical recording medium
WO2004001093A1 (ja) * 2002-06-24 2003-12-31 Kobelco Research Institute, Inc. 銀合金スパッタリングターゲットとその製造方法
US7514037B2 (en) * 2002-08-08 2009-04-07 Kobe Steel, Ltd. AG base alloy thin film and sputtering target for forming AG base alloy thin film
CN1197990C (zh) * 2002-09-03 2005-04-20 铼宝科技股份有限公司 导电薄膜用的合金靶材及制作方法
JP3993530B2 (ja) 2003-05-16 2007-10-17 株式会社神戸製鋼所 Ａｇ−Ｂｉ系合金スパッタリングターゲットおよびその製造方法
JP4384453B2 (ja) * 2003-07-16 2009-12-16 株式会社神戸製鋼所 Ａｇ系スパッタリングターゲット及びその製造方法
JP4309227B2 (ja) * 2003-10-16 2009-08-05 石福金属興業株式会社 スパッタリングターゲット材
JPWO2005056848A1 (ja) 2003-12-10 2007-07-05 田中貴金属工業株式会社 反射膜用の銀合金
DE102004040778B4 (de) * 2004-08-23 2011-11-24 Umicore Ag & Co. Kg Silberhartlotlegierungen
US20060115618A1 (en) * 2004-12-01 2006-06-01 Leesan Precious Metal Co., Ltd. Highly reflective and corrosion-resistant reflective layer film and its sputtering target
JP2009197342A (ja) * 2008-02-19 2009-09-03 Hopit:Kk 機能性シート材料
JP5287028B2 (ja) * 2008-08-20 2013-09-11 三菱マテリアル株式会社 光記録媒体の半透明反射膜形成用Ａｇ合金スパッタリングターゲット
JP4793502B2 (ja) 2009-10-06 2011-10-12 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
US9065418B2 (en) * 2009-12-25 2015-06-23 Nihon Dempa Kogyo Co. Ltd. Resonator electrode material excellent in aging property, piezoelectric resonator using the same material, and sputtering target made of the same material
JPWO2012077378A1 (ja) * 2010-12-09 2014-05-19 株式会社徳力本店 電気・電子用材
JP5472353B2 (ja) * 2012-03-27 2014-04-16 三菱マテリアル株式会社 銀系円筒ターゲット及びその製造方法
DE102012006718B3 (de) * 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben

Also Published As

Publication number Publication date
US20170166999A1 (en) 2017-06-15
CN106661720B (zh) 2019-05-28
EP3172354B1 (de) 2018-04-25
DE102014214683A1 (de) 2016-01-28
TW201606099A (zh) 2016-02-16
CN106661720A (zh) 2017-05-10
EP3172354A1 (de) 2017-05-31
TWI608108B (zh) 2017-12-11
WO2016012268A1 (de) 2016-01-28

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