KR102695398B1 - Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 - Google Patents

Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 Download PDF

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KR102695398B1
KR102695398B1 KR1020187014899A KR20187014899A KR102695398B1 KR 102695398 B1 KR102695398 B1 KR 102695398B1 KR 1020187014899 A KR1020187014899 A KR 1020187014899A KR 20187014899 A KR20187014899 A KR 20187014899A KR 102695398 B1 KR102695398 B1 KR 102695398B1
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apertures
collimator
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hexagonal
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KR20180063347A (ko
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마틴 리 리커
푸홍 창
안토니 인판테
청 왕
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020187014899A 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 Active KR102695398B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020247026805A KR20240127488A (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562246967P 2015-10-27 2015-10-27
US62/246,967 2015-10-27
PCT/US2016/053970 WO2017074633A1 (en) 2015-10-27 2016-09-27 Biasable flux optimizer/collimator for pvd sputter chamber

Related Child Applications (1)

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KR1020247026805A Division KR20240127488A (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

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KR102695398B1 true KR102695398B1 (ko) 2024-08-13

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KR1020247026805A Pending KR20240127488A (ko) 2015-10-27 2016-09-27 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터

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US (4) US9960024B2 (enExample)
EP (3) EP3920210B1 (enExample)
JP (3) JP7034912B2 (enExample)
KR (2) KR102695398B1 (enExample)
CN (6) CN106987815A (enExample)
SG (2) SG11201802667PA (enExample)
TW (4) TWI761889B (enExample)
WO (1) WO2017074633A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201802667PA (en) 2015-10-27 2018-05-30 Applied Materials Inc Biasable flux optimizer/collimator for pvd sputter chamber
CN109390222B (zh) * 2017-08-08 2021-01-05 宁波江丰电子材料股份有限公司 准直器检具及其使用方法
USD859333S1 (en) 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD858468S1 (en) 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
US20190353919A1 (en) * 2018-05-21 2019-11-21 Applied Materials, Inc. Multi-zone collimator for selective pvd
WO2020088415A1 (zh) * 2018-10-31 2020-05-07 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN109300764A (zh) * 2018-10-31 2019-02-01 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
CN112011776B (zh) * 2020-08-28 2022-10-21 北京北方华创微电子装备有限公司 半导体工艺设备及其工艺腔室
US11851751B2 (en) * 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD1026054S1 (en) 2022-04-22 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
CN115449762A (zh) * 2022-08-22 2022-12-09 无锡尚积半导体科技有限公司 一种用于磁控溅射设备的准直器及磁控溅射设备
USD1025935S1 (en) * 2022-11-03 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1024149S1 (en) * 2022-12-16 2024-04-23 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1026839S1 (en) * 2022-12-16 2024-05-14 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1025936S1 (en) * 2022-12-16 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
CN119020736A (zh) * 2023-05-24 2024-11-26 北京北方华创微电子装备有限公司 物理气相沉积设备的准直装置及物理气相沉积设备
US20250146119A1 (en) * 2023-11-07 2025-05-08 Applied Materials, Inc. Dual collimator physical vapor depositions processing chamber
WO2025181241A1 (en) * 2024-02-28 2025-09-04 Université De Namur A method for manufacturing coated articles
USD1103950S1 (en) * 2024-03-21 2025-12-02 Applied Materials, Inc. Process chamber collimator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100260663B1 (ko) * 1991-12-30 2000-07-01 히가시 데츠로 연장된 수명의 시준기

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06295903A (ja) * 1993-02-09 1994-10-21 Matsushita Electron Corp スパッタリング装置
US5362372A (en) 1993-06-11 1994-11-08 Applied Materials, Inc. Self cleaning collimator
US5380414A (en) 1993-06-11 1995-01-10 Applied Materials, Inc. Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor
US5415753A (en) 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5431799A (en) 1993-10-29 1995-07-11 Applied Materials, Inc. Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency
KR970009828B1 (en) 1994-02-23 1997-06-18 Sansung Electronics Co Ltd Fabrication method of collimator
EP0703598A1 (en) * 1994-09-26 1996-03-27 Applied Materials, Inc. Electrode between sputtering target and workpiece
JPH08260139A (ja) * 1995-03-23 1996-10-08 Sony Corp 成膜用コリメータ、成膜装置及び電子装置の製造方法
KR970017999A (ko) * 1995-09-29 1997-04-30 김광호 개선된 구조의 콜리메이터를 갖는 스퍼터링장치
US5650052A (en) * 1995-10-04 1997-07-22 Edelstein; Sergio Variable cell size collimator
KR970017999U (ko) 1995-10-23 1997-05-23 전자동세탁기
US5658442A (en) 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
US6482301B1 (en) 1998-06-04 2002-11-19 Seagate Technology, Inc. Target shields for improved magnetic properties of a recording medium
US6362097B1 (en) 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
US6149776A (en) 1998-11-12 2000-11-21 Applied Materials, Inc. Copper sputtering target
US20030015421A1 (en) 2001-07-20 2003-01-23 Applied Materials, Inc. Collimated sputtering of cobalt
JP2005504885A (ja) 2001-07-25 2005-02-17 アプライド　マテリアルズ　インコーポレイテッド 新規なスパッタ堆積方法を使用したバリア形成
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US7048837B2 (en) 2002-09-13 2006-05-23 Applied Materials, Inc. End point detection for sputtering and resputtering
TW200416838A (en) * 2002-11-20 2004-09-01 Renesas Tech Corp Method of fabricating semiconductor device
JP2007273490A (ja) 2004-03-30 2007-10-18 Renesas Technology Corp 半導体集積回路装置の製造方法
EP1710324B1 (en) 2005-04-08 2008-12-03 STMicroelectronics S.r.l. PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device
US7355192B2 (en) * 2006-03-30 2008-04-08 Intel Corporation Adjustable suspension assembly for a collimating lattice
KR102025330B1 (ko) * 2008-04-16 2019-09-25 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
US9062379B2 (en) 2008-04-16 2015-06-23 Applied Materials, Inc. Wafer processing deposition shielding components
US9316413B2 (en) 2008-06-11 2016-04-19 Honeywell International Inc. Selectable efficiency versus comfort for modulating furnace
US20090308739A1 (en) * 2008-06-17 2009-12-17 Applied Materials, Inc. Wafer processing deposition shielding components
KR20160145849A (ko) * 2008-06-17 2016-12-20 어플라이드 머티어리얼스, 인코포레이티드 균일한 증착을 위한 장치 및 방법
CN107039230A (zh) * 2009-04-24 2017-08-11 应用材料公司 晶圆处理沉积屏蔽部件
JP5865483B2 (ja) * 2012-03-14 2016-02-17 キヤノンアネルバ株式会社 締結部材および真空装置
US9831074B2 (en) * 2013-10-24 2017-11-28 Applied Materials, Inc. Bipolar collimator utilized in a physical vapor deposition chamber
US9543126B2 (en) * 2014-11-26 2017-01-10 Applied Materials, Inc. Collimator for use in substrate processing chambers
SG11201802667PA (en) * 2015-10-27 2018-05-30 Applied Materials Inc Biasable flux optimizer/collimator for pvd sputter chamber

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100260663B1 (ko) * 1991-12-30 2000-07-01 히가시 데츠로 연장된 수명의 시준기

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CN118127471A (zh) 2024-06-04
TW201944465A (zh) 2019-11-16
TWI702636B (zh) 2020-08-21
US20170117121A1 (en) 2017-04-27
TW202305885A (zh) 2023-02-01
JP2022079472A (ja) 2022-05-26
US10727033B2 (en) 2020-07-28
JP7034912B2 (ja) 2022-03-14
EP3920210B1 (en) 2023-05-31
US20200357617A1 (en) 2020-11-12
JP7504938B2 (ja) 2024-06-24
TWI761889B (zh) 2022-04-21
KR20180063347A (ko) 2018-06-11
KR20240127488A (ko) 2024-08-22
SG11201802667PA (en) 2018-05-30
CN118127470A (zh) 2024-06-04
US9960024B2 (en) 2018-05-01
US11309169B2 (en) 2022-04-19
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EP3369108A1 (en) 2018-09-05
EP3369108A4 (en) 2019-06-19
JP2018533673A (ja) 2018-11-15
WO2017074633A1 (en) 2017-05-04
CN110438464A (zh) 2019-11-12
TW201724196A (zh) 2017-07-01
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US20180218889A1 (en) 2018-08-02
EP4235744A3 (en) 2023-10-11
CN206418192U (zh) 2017-08-18
TW202111779A (zh) 2021-03-16
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US20190279851A1 (en) 2019-09-12
TWI669752B (zh) 2019-08-21
CN106987815A (zh) 2017-07-28
EP3920210A1 (en) 2021-12-08
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US10347474B2 (en) 2019-07-09

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