JP7034912B2 - Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ - Google Patents

Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ Download PDF

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Publication number
JP7034912B2
JP7034912B2 JP2018521365A JP2018521365A JP7034912B2 JP 7034912 B2 JP7034912 B2 JP 7034912B2 JP 2018521365 A JP2018521365 A JP 2018521365A JP 2018521365 A JP2018521365 A JP 2018521365A JP 7034912 B2 JP7034912 B2 JP 7034912B2
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openings
collimator
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extending
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JP2018533673A5 (enExample
JP2018533673A (ja
Inventor
マーティン リー ライカー
フーホン ジャン
アンソニー インファンテ
ジェン ワン
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Applied Materials Inc
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Applied Materials Inc
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Priority to JP2022031654A priority Critical patent/JP7504938B2/ja
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Priority to JP2024095005A priority patent/JP2024127896A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2018521365A 2015-10-27 2016-09-27 Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ Active JP7034912B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022031654A JP7504938B2 (ja) 2015-10-27 2022-03-02 Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ
JP2024095005A JP2024127896A (ja) 2015-10-27 2024-06-12 Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562246967P 2015-10-27 2015-10-27
US62/246,967 2015-10-27
PCT/US2016/053970 WO2017074633A1 (en) 2015-10-27 2016-09-27 Biasable flux optimizer/collimator for pvd sputter chamber

Related Child Applications (1)

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JP2022031654A Division JP7504938B2 (ja) 2015-10-27 2022-03-02 Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ

Publications (3)

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JP2018533673A JP2018533673A (ja) 2018-11-15
JP2018533673A5 JP2018533673A5 (enExample) 2019-11-07
JP7034912B2 true JP7034912B2 (ja) 2022-03-14

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JP2022031654A Active JP7504938B2 (ja) 2015-10-27 2022-03-02 Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ
JP2024095005A Pending JP2024127896A (ja) 2015-10-27 2024-06-12 Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ

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JP2024095005A Pending JP2024127896A (ja) 2015-10-27 2024-06-12 Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ

Country Status (8)

Country Link
US (4) US9960024B2 (enExample)
EP (3) EP3920210B1 (enExample)
JP (3) JP7034912B2 (enExample)
KR (2) KR20240127488A (enExample)
CN (6) CN110438464A (enExample)
SG (2) SG10202003396PA (enExample)
TW (5) TWI669752B (enExample)
WO (1) WO2017074633A1 (enExample)

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KR20240127488A (ko) * 2015-10-27 2024-08-22 어플라이드 머티어리얼스, 인코포레이티드 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
CN109390222B (zh) * 2017-08-08 2021-01-05 宁波江丰电子材料股份有限公司 准直器检具及其使用方法
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
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US20190353919A1 (en) * 2018-05-21 2019-11-21 Applied Materials, Inc. Multi-zone collimator for selective pvd
WO2020088415A1 (zh) * 2018-10-31 2020-05-07 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN109300764A (zh) * 2018-10-31 2019-02-01 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
CN112011776B (zh) * 2020-08-28 2022-10-21 北京北方华创微电子装备有限公司 半导体工艺设备及其工艺腔室
US11851751B2 (en) * 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD1026054S1 (en) 2022-04-22 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
CN115449762A (zh) * 2022-08-22 2022-12-09 无锡尚积半导体科技有限公司 一种用于磁控溅射设备的准直器及磁控溅射设备
USD1025935S1 (en) * 2022-11-03 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1024149S1 (en) * 2022-12-16 2024-04-23 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1026839S1 (en) * 2022-12-16 2024-05-14 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1025936S1 (en) * 2022-12-16 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
CN119020736A (zh) * 2023-05-24 2024-11-26 北京北方华创微电子装备有限公司 物理气相沉积设备的准直装置及物理气相沉积设备
US20250146119A1 (en) * 2023-11-07 2025-05-08 Applied Materials, Inc. Dual collimator physical vapor depositions processing chamber
WO2025181241A1 (en) * 2024-02-28 2025-09-04 Université De Namur A method for manufacturing coated articles
USD1103950S1 (en) * 2024-03-21 2025-12-02 Applied Materials, Inc. Process chamber collimator

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US20170117121A1 (en) 2017-04-27
EP4235744A3 (en) 2023-10-11
JP2022079472A (ja) 2022-05-26
EP3369108B1 (en) 2021-08-04
KR102695398B1 (ko) 2024-08-13
US9960024B2 (en) 2018-05-01
US10727033B2 (en) 2020-07-28
JP2024127896A (ja) 2024-09-20
EP4235744A2 (en) 2023-08-30
SG10202003396PA (en) 2020-06-29
TW202305885A (zh) 2023-02-01
CN110438464A (zh) 2019-11-12
TW201724196A (zh) 2017-07-01
US20190279851A1 (en) 2019-09-12
SG11201802667PA (en) 2018-05-30
EP3369108A1 (en) 2018-09-05
CN106987815A (zh) 2017-07-28
US11309169B2 (en) 2022-04-19
TWI669752B (zh) 2019-08-21
EP3920210B1 (en) 2023-05-31
CN112030123A (zh) 2020-12-04
TW202501569A (zh) 2025-01-01
JP7504938B2 (ja) 2024-06-24
TWI761889B (zh) 2022-04-21
EP3920210A1 (en) 2021-12-08
CN118127471A (zh) 2024-06-04
WO2017074633A1 (en) 2017-05-04
TWI839710B (zh) 2024-04-21
CN206418192U (zh) 2017-08-18
KR20180063347A (ko) 2018-06-11
US20180218889A1 (en) 2018-08-02
JP2018533673A (ja) 2018-11-15
TWI702636B (zh) 2020-08-21
KR20240127488A (ko) 2024-08-22
US10347474B2 (en) 2019-07-09
CN118127470A (zh) 2024-06-04
US20200357617A1 (en) 2020-11-12
TW201944465A (zh) 2019-11-16
EP3369108A4 (en) 2019-06-19
TW202111779A (zh) 2021-03-16

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