CN110438464A - 用于pvd溅射腔室的可偏压式通量优化器/准直器 - Google Patents

用于pvd溅射腔室的可偏压式通量优化器/准直器 Download PDF

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Publication number
CN110438464A
CN110438464A CN201910698016.7A CN201910698016A CN110438464A CN 110438464 A CN110438464 A CN 110438464A CN 201910698016 A CN201910698016 A CN 201910698016A CN 110438464 A CN110438464 A CN 110438464A
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CN
China
Prior art keywords
collimator
apertures
aspect ratio
hexagonal
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910698016.7A
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English (en)
Chinese (zh)
Inventor
马丁·李·里克
张富宏
安东尼·因凡特
王征
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Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN110438464A publication Critical patent/CN110438464A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
CN201910698016.7A 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器 Pending CN110438464A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562246967P 2015-10-27 2015-10-27
US62/246,967 2015-10-27
CN201610958470.8A CN106987815A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201610958470.8A Division CN106987815A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器

Publications (1)

Publication Number Publication Date
CN110438464A true CN110438464A (zh) 2019-11-12

Family

ID=58562020

Family Applications (6)

Application Number Title Priority Date Filing Date
CN202410177120.2A Pending CN118127471A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器
CN201621180242.4U Active CN206418192U (zh) 2015-10-27 2016-10-27 准直器、准直器组件和基板处理腔室
CN202010731212.2A Pending CN112030123A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器
CN201910698016.7A Pending CN110438464A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器
CN202410177114.7A Pending CN118127470A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器
CN201610958470.8A Pending CN106987815A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器

Family Applications Before (3)

Application Number Title Priority Date Filing Date
CN202410177120.2A Pending CN118127471A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器
CN201621180242.4U Active CN206418192U (zh) 2015-10-27 2016-10-27 准直器、准直器组件和基板处理腔室
CN202010731212.2A Pending CN112030123A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN202410177114.7A Pending CN118127470A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器
CN201610958470.8A Pending CN106987815A (zh) 2015-10-27 2016-10-27 用于pvd溅射腔室的可偏压式通量优化器/准直器

Country Status (8)

Country Link
US (4) US9960024B2 (enExample)
EP (3) EP3369108B1 (enExample)
JP (3) JP7034912B2 (enExample)
KR (2) KR20240127488A (enExample)
CN (6) CN118127471A (enExample)
SG (2) SG11201802667PA (enExample)
TW (4) TWI669752B (enExample)
WO (1) WO2017074633A1 (enExample)

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CN109390222B (zh) * 2017-08-08 2021-01-05 宁波江丰电子材料股份有限公司 准直器检具及其使用方法
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WO2020088415A1 (zh) * 2018-10-31 2020-05-07 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
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CN112011776B (zh) * 2020-08-28 2022-10-21 北京北方华创微电子装备有限公司 半导体工艺设备及其工艺腔室
US11851751B2 (en) * 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) * 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
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USD1025935S1 (en) * 2022-11-03 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1024149S1 (en) * 2022-12-16 2024-04-23 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
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CN119020736A (zh) * 2023-05-24 2024-11-26 北京北方华创微电子装备有限公司 物理气相沉积设备的准直装置及物理气相沉积设备
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Also Published As

Publication number Publication date
TWI839710B (zh) 2024-04-21
CN118127470A (zh) 2024-06-04
KR20240127488A (ko) 2024-08-22
TWI669752B (zh) 2019-08-21
US20190279851A1 (en) 2019-09-12
TW202305885A (zh) 2023-02-01
JP2022079472A (ja) 2022-05-26
EP3369108A4 (en) 2019-06-19
SG11201802667PA (en) 2018-05-30
KR102695398B1 (ko) 2024-08-13
US20170117121A1 (en) 2017-04-27
CN206418192U (zh) 2017-08-18
KR20180063347A (ko) 2018-06-11
US20200357617A1 (en) 2020-11-12
EP3369108A1 (en) 2018-09-05
US20180218889A1 (en) 2018-08-02
JP7504938B2 (ja) 2024-06-24
EP3920210A1 (en) 2021-12-08
EP3369108B1 (en) 2021-08-04
EP4235744A2 (en) 2023-08-30
TWI702636B (zh) 2020-08-21
EP4235744A3 (en) 2023-10-11
US11309169B2 (en) 2022-04-19
JP7034912B2 (ja) 2022-03-14
CN112030123A (zh) 2020-12-04
JP2024127896A (ja) 2024-09-20
CN106987815A (zh) 2017-07-28
TW201724196A (zh) 2017-07-01
US10727033B2 (en) 2020-07-28
WO2017074633A1 (en) 2017-05-04
JP2018533673A (ja) 2018-11-15
EP3920210B1 (en) 2023-05-31
US9960024B2 (en) 2018-05-01
TW202501569A (zh) 2025-01-01
TWI761889B (zh) 2022-04-21
US10347474B2 (en) 2019-07-09
CN118127471A (zh) 2024-06-04
TW201944465A (zh) 2019-11-16
TW202111779A (zh) 2021-03-16
SG10202003396PA (en) 2020-06-29

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