WO2020088415A1 - 反应腔室及半导体加工设备 - Google Patents

反应腔室及半导体加工设备 Download PDF

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Publication number
WO2020088415A1
WO2020088415A1 PCT/CN2019/113726 CN2019113726W WO2020088415A1 WO 2020088415 A1 WO2020088415 A1 WO 2020088415A1 CN 2019113726 W CN2019113726 W CN 2019113726W WO 2020088415 A1 WO2020088415 A1 WO 2020088415A1
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Prior art keywords
reaction chamber
hole corresponding
aspect ratio
region
hole
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PCT/CN2019/113726
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English (en)
French (fr)
Inventor
侯珏
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北京北方华创微电子装备有限公司
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Priority claimed from CN201821792352.5U external-priority patent/CN209071271U/zh
Priority claimed from CN201811292310.XA external-priority patent/CN109300764A/zh
Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Publication of WO2020088415A1 publication Critical patent/WO2020088415A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Definitions

  • the present disclosure relates to the technical field of semiconductor manufacturing, in particular to a reaction chamber and semiconductor processing equipment.
  • the magnetron sputtering physical vapor deposition method has been widely used in the field of semiconductor manufacturing.
  • the existing magnetron sputtering physical vapor deposition equipment is shown in FIG. 1, the reaction chamber includes a grounded chamber body 1, and a base 8 is provided in the chamber body 1 to carry the workpiece 10 to be processed.
  • a snap ring 9 is also provided around the base 8.
  • a target 4 is also provided, which is electrically connected to the excitation source 12.
  • the excitation source 12 is used to apply a negative bias to the target 4 to excite the process gas inside the chamber body 1 to form a plasma and attract positively charged ions in the plasma to bombard the target 4 so that metal atoms escape the target
  • the surface is deposited on the workpiece 10 to be processed.
  • a support assembly 2 is also provided on the side of the target 4 facing away from the interior of the chamber body 1, which forms a sealed cavity with the target 4 and is filled with deionized water 3.
  • a magnetron 5 is also provided in the sealed cavity, and a driving device 6 is also installed on the support assembly 2 to drive the magnetron 5 to rotate, while making the magnetron 5 in the center area of the target 4 and The reciprocating movement between the edge regions enables the magnetron 5 to scan the entire surface of the target 4.
  • a liner 7 is provided in the chamber body 1 to prevent the chamber wall from being contaminated. In order to improve the film coverage of the deep hole of the workpiece to be processed, RF power is applied to the base 8 through the RF power supply 11.
  • a reaction chamber including:
  • the base is arranged in the body of the chamber and used for carrying the workpiece to be processed
  • a target material which is arranged in the body of the chamber and above the base;
  • a collimator is provided in the chamber body and is located between the target and the base to improve the film coverage of the bottom of the deep hole and the side wall of the deep hole on the workpiece to be processed Film coverage symmetry.
  • the collimator includes a collimating body, and the collimating body corresponds to a central region, an intermediate region, and an edge region divided on the plane where the target is located
  • Each of the areas includes a plurality of through holes extending in the axial direction of the chamber body, wherein the aspect ratio of each through hole corresponding to the middle region is greater than the depth to width ratio of each through hole corresponding to the central region At least one of the aspect ratios of the through holes corresponding to the edge area.
  • the aspect ratio of each through hole corresponding to the middle region is greater than the aspect ratio of each through hole corresponding to the center region, and the aspect ratio of each through hole corresponding to the middle region It is larger than the aspect ratio of each through hole corresponding to the edge area.
  • the aspect ratios of the through holes corresponding to the central area and the aspect ratio of the through holes corresponding to the edge area are the same.
  • the depth-to-width ratio of each through hole corresponding to the middle region is more than 15% greater than the depth-to-width ratio of each through hole corresponding to the center region;
  • the aspect ratio is greater than the aspect ratio of each through hole corresponding to the edge region by more than 15%.
  • the value of the aspect ratio of each through hole corresponding to the central region and the aspect ratio of each through hole corresponding to the edge region are both greater than 2.
  • the radial cross-sectional area of each through hole corresponding to the central region, the radial cross-sectional area of each through hole corresponding to the middle region, and each corresponding to the edge region are the same, and the depth of each through hole corresponding to the middle region is greater than the depth of each through hole corresponding to the center region, and the depth of each through hole corresponding to the middle region is greater than the corresponding Describe the depth of each through hole in the edge area.
  • the depth of each through hole corresponding to the center region, the depth of each through hole corresponding to the middle region, and the depth of each through hole corresponding to the edge region are the same, and correspond to the The radial cross-sectional area of each through hole in the middle region is smaller than the radial cross-sectional area of each through hole corresponding to the center region, and the radial cross-sectional area of each through hole corresponding to the central region is smaller than the corresponding The radial cross-sectional area of each of the through holes in the edge area.
  • the sum of the areas of the radial sections of the collimating body corresponding to the central region and the edge region accounts for more than 60% of the total radial cross-sectional area of the collimating body .
  • the reaction chamber further includes:
  • the coil is arranged around the side wall of the chamber body and is located between the collimator and the base;
  • a radio frequency power supply is electrically connected to the coil.
  • the side wall of the chamber body includes an upper side wall and a lower side wall spaced along its axis; the reaction chamber further includes:
  • a Faraday shield is placed around the inside of the insulating cylinder.
  • the reaction chamber further includes:
  • An upper lining is provided around the inner side of the upper side wall, and the collimator is fixedly connected to the upper lining;
  • a lower inner lining is circumferentially arranged between the lower side wall and the base.
  • the potential of the Faraday shield is suspended.
  • the Faraday shield is provided with at least one slit, and the slit is provided along the axial direction of the Faraday shield.
  • the width of the slit in the circumferential direction of the Faraday shield is less than 10 mm.
  • the material used by the collimator includes aluminum or stainless steel.
  • a semiconductor processing apparatus including the reaction chamber described in any one of the above.
  • the reaction chamber provided by the present invention through the collimator located in the chamber body and between the target and the base, can make the metal atoms escaping from the target have good directivity after passing through the collimator, It can be more easily deposited to the bottom of the deep hole when incident on the workpiece to be processed, and can be more uniformly deposited to the two sidewalls of the deep hole, thereby improving the film coverage of the bottom of the deep hole and the film of the sidewall of the deep hole Coverage symmetry.
  • the collimator can also filter metal atoms generated in various areas of the target material to different degrees to reduce the deposition rate, so that the film growth can be more accurately controlled in the thinner film deposition process.
  • the semiconductor processing equipment provided by the present invention can improve the symmetry of the film coverage of the bottom of the deep hole and the film coverage of the side wall of the deep hole by using the reaction chamber provided by the present invention.
  • FIG. 1 is a schematic structural diagram of a prior art magnetron sputtering physical vapor deposition equipment
  • FIG. 2 is a schematic structural diagram of a reaction chamber according to an embodiment of the present disclosure
  • FIG. 3 is a top view of a collimator according to an embodiment of the present disclosure.
  • FIG. 4 is a diagram of a region division of a plane where a target material is located according to an embodiment of the present disclosure
  • FIG. 5 is a schematic structural diagram of a Faraday shield according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of a second plasma bombarding the bottom of a deep hole according to an embodiment of the present disclosure.
  • 1-chamber body 11-upper side wall; 12-lower side wall; 13-bottom wall; 112-insulating cylinder; 131-upper lining; 132-Faraday shield; 133-lower lining; 1321-open Seam; 14, 15-adapter; 16-insulation post;
  • the reaction chamber includes: a chamber body 1, a base 2, a target 3, and a collimator 4.
  • the base 2 is disposed in the cavity body 1, which may be specifically disposed at the bottom of the chamber body 1, used to carry the workpiece X to be processed, and electrically connected to the radio frequency power supply 22, and the radio frequency power supply 22 is used to apply radio frequency to the base 2 Power, the bias voltage is formed on the base 2, so that the film coverage of the deep hole of the workpiece to be processed can be improved.
  • a pressure ring 21 is also provided around the base 2 for fixing the position of the workpiece X to be processed on the base 2.
  • the target 3 is disposed in the cavity body 1 and above the base 2, specifically, it may be disposed on the top of the chamber body 1.
  • the collimator 4 is disposed in the chamber body 1 and is located between the target 3 and the base 2, and the material used by the collimator 4 includes metal materials such as Al or stainless steel.
  • the upper part of the chamber body 1 may be provided with an upper electrode assembly 5.
  • the upper electrode assembly 5 includes: a magnetron 501, a driving device 502, a support assembly 503 and a plasma excitation source 504.
  • the plasma excitation source 504 is electrically connected to the target 3 for applying a negative bias voltage to the target 3 to excite the process gas inside the chamber body 1 to form a plasma and attract the positively charged ions in the plasma to bombard
  • the target 3 allows metal atoms to escape from the surface of the target and deposit on the workpiece X to be processed.
  • the supporting assembly 503 is disposed on the side of the target 3 facing away from the chamber body 1, and forms a sealed chamber suitable for containing deionized water 505 with the target 3.
  • the deionized water 505 is used to cool the target 3.
  • the magnetron 501 is located in the sealed chamber and connected to the driving device 502 outside the sealed chamber. The magnetron 501 scans the target 3 under the drive of the driving device 502 to generate a magnetic field near the surface of the target 3.
  • the plasma excitation source 504 applies a bias voltage to the target 3 so that it forms a negative pressure with respect to the grounded chamber body 1, thereby discharging a process gas such as argon gas in the chamber body 1 to generate argon ions And electronics.
  • the magnetic field generated by the magnetron 501 can prolong the movement trajectory of electrons. During the movement of the electrons, it continuously collides with argon atoms, ionizing a large amount of argon ions, which can increase the ionization rate of the target. The positively charged argon ions are attracted to the target 3 with negative bias. When the energy of the argon ions is high enough, impacting the target 3 will cause the metal atoms to escape the surface of the target 3 and move down to be deposited on the workpiece X to be processed.
  • the collimator 4 provided in this embodiment is disposed in the chamber body 1 and is located between the target 3 and the base 2.
  • the collimator 4 can make the metal atoms escaping from the target 3 have good directivity after passing through the collimator 4, so that it can be deposited more easily to the bottom of the deep hole when incident on the workpiece X to be processed, and can be more It is evenly deposited on the two side walls of the deep hole, thereby improving the symmetry of the film coverage at the bottom of the deep hole and the film coverage of the side wall of the deep hole.
  • the collimator 4 can also filter metal atoms generated in various regions of the target 3 to different degrees to reduce the deposition rate, so that the film growth can be controlled more accurately in the thinner film deposition process.
  • the collimator 4 also increases the negative bias of the base 2, which is beneficial to improve the film coverage.
  • the collimator 4 includes a collimating body 41 in the collimating body 41 and in the plane of the target 3 (ie, the chamber body 1).
  • the through holes 42 of the collimator 4 corresponding to different areas of the chamber body 1 in the radial direction have different aspect ratios.
  • the so-called aspect ratio refers to the ratio of the depth of the through-hole 42 to the width D, where the depth refers to the axial length of the through-hole 41, and the width D refers to the two opposite sides of the radial cross-section of the through-hole 42 The distance between the sides.
  • the collimating body 41 is coaxial with the chamber body 1, that is, the axis of the collimating body 41 coincides with the axis of the chamber body 1.
  • the radial cross-sectional shape of the through-hole 42 is not limited, and may be, for example, polygonal or circular.
  • the radial cross-sectional shape of the through holes 42 is a regular hexagon, and each through hole 42 is arranged in the collimating body 41 to form a honeycomb structure.
  • the aspect ratios of the through holes 42 in the same area on the radial section of the corresponding chamber body 1 are the same.
  • the aspect ratio of each through hole 42 corresponding to the central region C is referred to as the center aspect ratio
  • the aspect ratio of each through hole 42 corresponding to the intermediate region B is referred to as the intermediate aspect ratio
  • the corresponding edge region A The aspect ratio of each through hole 42 is called the edge aspect ratio.
  • the middle aspect ratio is greater than the center aspect ratio, and the middle aspect ratio is greater than the edge aspect ratio, that is, the middle aspect ratio is greater than both the center aspect ratio and the edge aspect ratio.
  • the number of metal atoms corresponding to the middle region B after passing through the collimator 4 will also be basically the same as the number of metal atoms in the other two regions after passing through the collimator 4. There will be significant differences.
  • the collimator 4 is equivalent to a filter, which plays a filtering role, so that the number of metal atoms passing through corresponding different regions tends to be uniform, thereby improving the uniformity of film deposition.
  • the central aspect ratio and the edge aspect ratio have the same value, that is, the central area C and the edge area A have the same aspect ratio. In this way, it can be ensured that the number of metal atoms corresponding to the central region C and the edge region A after passing through the collimator 4 is the same.
  • the middle aspect ratio is more than 15% greater than the center aspect ratio, and the middle aspect ratio is more than 15% greater than the edge aspect ratio. Within this range, it can be ensured that the number of metal atoms corresponding to each region after passing through the collimator 4 is substantially the same.
  • the values of the center aspect ratio and the edge aspect ratio are both greater than 2. Within this range, it can effectively play a filtering role.
  • each through-hole 42 corresponding to the central region C the radial cross-sectional area of each through-hole 42 of the intermediate region B, and the radial cross-sectional area of each through-hole 42 of the edge region A are the same.
  • the depth of each through hole 42 in the middle region B should be greater than the depth of each through hole 42 in the center region C and the edge region A, wherein the depth of the through holes 42 in the center region C and the edge region A is 50 mm or more.
  • the central area C, the intermediate area B, and the edge area A may have the same depth of the through hole.
  • the radial cross-sectional area of each through hole in the middle region B should be smaller than the radial cross-sectional area of each through hole in the central region C and the edge region A.
  • the radial cross-sections of the collimating body 1 correspond to the central region C, the middle region B, and the edge regions.
  • the sizes of the regions can be set according to specific needs.
  • the radial cross-sections of the collimating body 1 correspond to The sum of the areas of the central area C and the edge area A should account for more than 60% of the total radial cross-sectional area of the collimating body 1. In this way, it can be ensured that the number of metal atoms corresponding to the central region C and the edge region A after passing through the collimator 4 is the same.
  • the middle aspect ratio can be greater than one of the center aspect ratio and the edge aspect ratio, and the middle aspect ratio is more than 15% greater than the center aspect ratio or the edge aspect ratio, which can also play a role in improving the film deposition The effects of uniformity, film coverage at the bottom of the deep hole and symmetry of the film coverage at the side wall of the deep hole.
  • the middle aspect ratio is greater than the center aspect ratio and the edge aspect ratio
  • the values of the center aspect ratio and the edge aspect ratio can also be different, but it still needs to meet the middle aspect ratio than the center aspect ratio and the edge aspect ratio.
  • the ratio is greater than 15% to ensure that the number of metal atoms corresponding to each region after passing through the collimator 4 is basically the same.
  • the reaction chamber further includes: a coil 6 and a radio frequency power supply 7, wherein the coil 6 is circumferentially arranged along the side wall of the chamber body 1 and is located between the collimator 4 and the base 2
  • the coil 6 may be formed by winding one or more turns of a spiral coil.
  • the radio frequency power supply 7 is electrically connected to the coil 6 to load the coil 6 with radio frequency power.
  • the side wall of the chamber body 1 includes an upper side wall 11 and a lower side wall 12 spaced apart along its axis (ie, the Z direction in FIG. 2).
  • the reaction chamber further includes an insulating cylinder 112 and a Faraday shield 132, wherein the insulating cylinder 112 is connected between the upper side wall 11 and the lower side wall 12, and the coil 6 is disposed around the outer side of the insulating cylinder 112.
  • the Faraday shield 132 is disposed around the inside of the insulating cylinder 112.
  • the radio frequency power supply 7 supplies radio frequency power to the coil 6 so that the coil 6 generates an electromagnetic field, and the electromagnetic field is coupled into the chamber body 1 via the insulating cylinder 112.
  • the above-mentioned coil 6 and RF power supply 7 constitute an auxiliary plasma excitation source.
  • a process gas such as argon gas is introduced into the chamber body 1.
  • the energy emitted by the coil 6 can be coupled Into the chamber body 1, argon gas is excited to generate a second plasma Ar + 101.
  • the second plasma Ar + 101 accelerates bombardment of the thin film at the bottom of the deep hole on the workpiece X to be processed, so that a part of the metal M102 that has been deposited at the bottom of the deep hole is deposited on both sides of the deep hole Wall, thereby increasing the coverage of the side wall of the deep hole.
  • the upper side wall 11 and the lower side wall 12 are made of metal materials and grounded, and the insulating cylinder 112 is made of insulating materials such as ceramics and quartz.
  • the reaction chamber further includes an upper liner 131 and a lower liner 133.
  • the upper inner liner 131 surrounds the inner side of the upper side wall 11 to protect the upper side wall 11 from contamination.
  • the collimator 4 is fixedly connected to the upper liner 131.
  • the collimator 4 may be integrally processed with the upper inner lining 131, or may be suspended on the upper inner lining 131 through a connecting member.
  • the top end of the upper lining 131 is fixed to the upper side wall 11 by the adapter 14, the lower lining 33 is circumferentially disposed between the lower side wall 12 and the base 2, and one end of the lower lining 33 is fixed to the lower side wall 12 by the adapter 15 ⁇ , the other end extends to the base 2.
  • the lower liner 33 serves to protect the lower side wall 12 and the bottom wall 13 from contamination.
  • the Faraday shield 132 is used to protect the insulating cylinder 112 from contamination, increase the service life of the insulating cylinder 112, and reduce the cost of use.
  • the upper lining 131 and the lower lining 133 are grounded through an adapter, the Faraday shield 132 is set to a floating potential, and is insulated from the grounded upper lining 131 and the lower lining 133 by an insulating material such as ceramic or quartz.
  • the Faraday shield 132 can be fixed to the adapter 14 through an insulating post 16 of ceramic material to be suspended from the chamber body 1 to suspend its potential.
  • the Faraday shield 132 can also be grounded or connected with electrical components to make them at different potentials.
  • the Faraday shield 132 is provided with at least one slit 1321 along the axis of the Faraday shield 132 To set, that is, extend in the Z direction shown in FIG. 2.
  • the Faraday shield 132 may be arranged at intervals in the circumferential direction.
  • the Faraday shield 132 is completely broken at the slit 1321, that is, each slit 1321 divides the Faraday shield 132 into plates that do not contact each other. In this way, eddy current loss and heat generation can be effectively prevented, so that the energy of the coil 6 can be effectively coupled into the chamber body 1.
  • the number of slits of the Faraday shield 132 may also be less than or more than four.
  • each slit 1321 in the circumferential direction of the Faraday shield 132 is less than 10 mm.
  • the reaction chamber provided by the embodiments of the present disclosure can pass through the collimator through the collimator in the chamber body and between the target and the susceptor It has good directivity, so that when it is incident on the workpiece to be processed, it can be more easily deposited to the bottom of the deep hole, and can be deposited more uniformly on the two sidewalls of the deep hole, thereby improving the film coverage of the bottom of the deep hole And the symmetry of the film coverage of the side wall of the deep hole.
  • the collimator can also filter metal atoms generated in various areas of the target material to different degrees to reduce the deposition rate, so that the film growth can be more accurately controlled in the thinner film deposition process.
  • Another embodiment of the present disclosure provides a semiconductor processing device, which is a magnetron sputtering physical vapor deposition device, which can be used for the preparation of sputtering materials and thin films such as Cu, Ta, Ti, and Al.
  • the semiconductor processing apparatus includes the reaction chamber of the previous embodiment.
  • the semiconductor processing equipment provided by the embodiment of the present disclosure can improve the symmetry of the film coverage of the bottom of the deep hole and the film coverage of the side wall of the deep hole by adopting the above reaction chamber provided by the embodiment of the present disclosure.

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Abstract

本公开提供了一种反应腔室及半导体加工设备，该反应腔室包括：腔室本体；基座，设置在腔室本体内，用于承载待加工工件；靶材，设置在腔室本体内，且位于基座的上方；以及准直器，设置在腔室本体内，且位于靶材与基座之间，用以提高待加工工件上的深孔底部的薄膜覆盖率以及深孔侧壁的薄膜覆盖率对称性。本公开提供的反应腔室，可以提高深孔底部的薄膜覆盖率以及深孔侧壁的薄膜覆盖率对称性，还可以在更薄的薄膜沉积工艺中更加精确地控制薄膜生长。

Description

反应腔室及半导体加工设备 技术领域
本公开涉及半导体制造技术领域，尤其涉及一种反应腔室及半导体加工设备。
背景技术
目前，磁控溅射物理气相沉积方法已广泛应用在半导体制造领域中。现有的磁控溅射物理气相沉积设备如图1所示，其反应腔室包括接地的腔室本体1，且在腔室本体1内设置有基座8，用以承载待加工工件10。在基座8的周围还设置有卡环9。并且，在腔室本体1内，且位于基座8的上方还设置有靶材4，其与激励源12电连接。激励源12用于向靶材4施加负偏压，以激发腔室本体1内部的工艺气体形成等离子体，并吸引等离子体中带正电的离子轰击靶材4，使金属原子逸出靶材表面并沉积在待加工工件10上。在靶材4背离腔室本体1内部的一侧还设置有支撑组件2，其与靶材4构成密封腔，其中充满去离子水3。此外，在密封腔中还设置有磁控管5，且在支撑组件2上还安装有驱动装置6，用以驱动磁控管5旋转，同时使磁控管5在靶材4的中心区域和边缘区域之间作往复运动，以使磁控管5能够扫描靶材4的整个表面。腔室本体1内设置有内衬7，以防止腔壁被污染。为了提高待加工工件深孔的薄膜覆盖率，通过射频电源11向基座8施加射频功率。
在工艺过程中，由于靶材逸出的金属原子缺乏良好的方向性，对于待加工工件的深孔尤其是其边缘区域的深孔，只有部分方向的金属原子可以沉积于深孔侧壁，影响了深孔侧壁的覆盖率，并且部分深孔侧壁更难以被金属离子沉积，导致深孔侧壁覆盖率的对称性较差。尤其接近深孔底部的侧壁位置，由于该位置深宽比较高，导致该位置的薄膜沉积效果难以令人满意。
发明内容
根据本公开的一个方面，提供了一种反应腔室，包括：
腔室本体；
基座，设置在所述腔室本体内，用于承载待加工工件；
靶材，设置在所述腔室本体内，且位于所述基座的上方；以及
准直器，设置在所述腔室本体内，且位于所述靶材与所述基座之间，用以提高所述待加工工件上的深孔底部的薄膜覆盖率以及深孔侧壁的薄膜覆盖率对称性。
在本公开的一些实施例中，所述准直器包括准直主体，在所述准直主体中，且分别与在所述靶材所在平面上划分的中心区域、中间区域及边缘区域相对应的区域，均包括多个沿所述腔室本体的轴向延伸的通孔，其中，对应所述中间区域的各通孔的深宽比大于对应所述中心区域的各通孔的深宽比和对应所述边缘区域的各通孔的深宽比二者中的至少一者。
在本公开的一些实施例中，对应所述中间区域的各通孔的深宽比大于对应所述中心区域的各通孔的深宽比，对应所述中间区域的各通孔的深宽比大于对应所述边缘区域的各通孔的深宽比。
在本公开的一些实施例中，对应所述中心区域的各通孔的深宽比和对应所述边缘区域的各通孔的深宽比相同。
在本公开的一些实施例中，对应所述中间区域的各通孔的深宽比比对应所述中心区域的各通孔的深宽比大15％以上；对应所述中间区域的各通孔的深宽比比对应所述边缘区域的各通孔的深宽比大15％以上。
在本公开的一些实施例中，对应所述中心区域的各通孔的深宽比与对应所述边缘区域的各通孔的深宽比的数值均大于2。
在本公开的一些实施例中，对应所述中心区域的各所述通孔的径向截面 面积、对应所述中间区域的各所述通孔的径向截面面积及对应所述边缘区域的各所述通孔的径向截面面积相同，且对应所述中间区域的各通孔的深度大于对应所述中心区域的各通孔的深度，对应所述中间区域的各通孔的深度大于对应所述边缘区域的各通孔的深度。
在本公开的一些实施例中，对应所述中心区域的各通孔的深度、对应所述中间区域的各通孔的深度及对应所述边缘区域的各通孔的深度相同，且对应所述中间区域的各所述通孔的径向截面面积小于对应所述中心区域的各所述通孔的径向截面面积，对应所述中间区域的各所述通孔的径向截面面积小于对应所述边缘区域的各所述通孔的径向截面面积。
在本公开的一些实施例中，所述准直主体的径向截面的分别对应中心区域和所述边缘区域的区域的面积之和占所述准直主体的径向截面总面积的60％以上。
在本公开的一些实施例中，所述反应腔室还包括：
线圈，沿所述腔室本体的侧壁环绕设置，且位于所述准直器与所述基座之间；
射频电源，与所述线圈电连接。
在本公开的一些实施例中，所述腔室本体的侧壁包括沿其轴线间隔设置的上侧壁和下侧壁；所述反应腔室还包括：
绝缘筒体，连接在所述上侧壁和下侧壁之间，所述线圈环绕设置在所述绝缘筒体的外侧；
法拉第屏蔽件，环绕设置在所述绝缘筒体的内侧。
在本公开的一些实施例中，所述反应腔室还包括：
上内衬，环绕设置在所述上侧壁的内侧，所述准直器与所述上内衬固定连接；
下内衬，环绕设置在所述下侧壁与所述基座之间。
在本公开的一些实施例中，所述法拉第屏蔽件的电位悬浮。
在本公开的一些实施例中，所述法拉第屏蔽件上设置有至少一个开缝，所述开缝沿所述法拉第屏蔽件的轴向设置。
在本公开的一些实施例中，所述开缝在所述法拉第屏蔽件的圆周方向上的宽度小于10mm。
在本公开的一些实施例中，所述准直器所采用的材料包括铝或者不锈钢。
根据本公开的另一个方面，提供了一种半导体加工设备，包括上述任一项所述的反应腔室。
本发明的有益效果：
本发明提供的反应腔室，其通过在腔室本体内，且位于靶材与基座之间准直器，可以使自靶材逸出的金属原子经过准直器后具有良好的方向性，以能够在入射到待加工工件上时更容易沉积至深孔底部，并且能够更均匀地沉积至深孔的两个侧壁，从而提高了深孔底部的薄膜覆盖率以及深孔侧壁的薄膜覆盖率对称性。同时，准直器还能够对靶材各区域产生的金属原子进行不同程度的过滤，以起到降低沉积速率的作用，从而可以在更薄的薄膜沉积工艺中更加精确地控制薄膜生长。
本发明提供的半导体加工设备，其通过采用本发明提供的上述反应腔室，可以提高深孔底部的薄膜覆盖率以及深孔侧壁的薄膜覆盖率对称性。
附图说明
图1是现有技术的磁控溅射物理气相沉积设备的结构示意图；
图2是本公开一实施例的反应腔室的结构示意图；
图3是本公开一实施例的准直器的俯视图；
图4是本公开一实施例的靶材所在平面的区域划分图；
图5是本公开一实施例的法拉第屏蔽件的结构示意图；
图6是本公开一实施例的第二等离子体轰击深孔底部的原理图。
符号说明
【现有技术】
1-腔室本体；2-支撑组件；3-去离子水；4-靶材；5-磁控管；6-驱动装置；7-内衬；8-基座；9-卡环；10-待加工工件；11-射频电源；12-激励源。
【本公开】
1-腔室本体；11-上侧壁；12-下侧壁；13-底壁；112-绝缘筒体；131-上内衬；132-法拉第屏蔽件；133-下内衬；1321-开缝；14、15-适配器；16-绝缘柱；
2-基座；21-压环；22-射频电源；
3-靶材；A-中心区域；B-中间区域；C-边缘区域；
4-准直器；41-准直主体；42-通孔；
5-上电极组件；501-磁控管；502-驱动装置；503-支撑组件；504-等离子体激励源；505-去离子水；
6-线圈；
7-射频电源；
X-待加工工件；
101-第二等离子体；102-金属M。
具体实施方式
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本公开作进一步的详细说明。
本公开一实施例提供了一种反应腔室，如图2所示，反应腔室包括：腔室本体1、基座2、靶材3和准直器4。
基座2设置于腔体本体1内，具体可以是设置在腔室本体1的底部，用于承载待加工工件X，并与射频电源22电连接，射频电源22用于向基座2施加射频功率，以基座2上形成偏压，从而能够提高待加工工件深孔的薄膜覆盖率。在基座2的四周还设置有压环21，用于固定待加工工件X在基座2上的位置。
靶材3设置在腔体本体1内，且位于基座2的上方，具体可以是设置在腔室本体1的顶部。
准直器4设置在腔室本体1内，且位于靶材3与基座2之间，并且准直器4所采用的材料包括诸如Al或者不锈钢等金属材料。
腔体本体1的上部可以设置有上电极组件5，上电极组件5包括：磁控管501，驱动装置502、支撑组件503和等离子体激励源504。
其中，等离子体激励源504与靶材3电连接，用于向靶材3施加负偏压，以激发腔室本体1内部的工艺气体形成等离子体，并吸引等离子体中带正电的离子轰击靶材3，使金属原子逸出靶材表面并沉积在待加工工件X上。支撑组件503设置在靶材3的背离腔室本体1的一侧，且与靶材3构成适于容纳去离子水505的密封腔室，去离子水505用于对靶材3进行冷却。磁控管501位于该密封腔室中，并连接密封腔室外的驱动装置502。磁控管501在驱动装置502的驱动下扫描靶材3，以在靶材3表面附近产生磁场。
在工艺过程中，等离子体激励源504施加偏压至靶材3，使其相对于接地的腔室本体1形成负压，从而使腔室本体1内例如氩气的工艺气体放电而产生氩离子和电子。磁控管501所产生的磁场可以延长电子的运动轨迹，电子运动过程中不断与氩原子发生碰撞，电离出大量的氩离子，可增加靶材的离化率。带正电的氩离子被吸引至负偏压的靶材3处。当氩离子的能量足够高时，撞击靶材3，会使金属原子逸出靶材3表面并向下运动沉积在待加工工件X上。
结合图2和图3所示，本实施例提供的准直器4设置于腔室本体1内，且位于靶材3与基座2之间。该准直器4可以使自靶材3逸出的金属原子经过准直器4后具有良好的方向性，以能够在入射到待加工工件X上时更容易沉积至深孔底部，并且能够更均匀地沉积至深孔的两个侧壁，从而提高了深孔底部的薄膜覆盖率以及深孔侧壁的薄膜覆盖率对称性。同时，准直器4还能够对靶材3各区域产生的金属原子进行不同程度的过滤，以起到降低沉积速率的作用，从而可以在更薄的薄膜沉积工艺中更加精确地控制薄膜生长。另外，准直器4还使基座2的负偏压增加，有利于提高薄膜覆盖率。
在本实施例中，如图3和图4所示，准直器4包括准直主体41，在该准直主体41中，且分别与在靶材3所在平面(即，与腔室本体1内部相对的表面，与图3中X方向和Y方向所在平面相互平行)上划分的中心区域C、依次环绕在该中心区域C的周围的中间区域B及边缘区域A相对应的区域，均包括多个沿腔室本体1的轴向(图1中示出的Z方向)延伸的通孔42，其中，对应中间区域B的各通孔42的深宽比大于对应中心区域C的各通孔42的深宽比和对应边缘区域A的各通孔42的深宽比中的至少一者。也就是说，准直器4的对应腔室本体1径向上的不同区域的通孔42具有不同的深宽比。所谓深宽比，是指通孔42的深度与宽度D的比值，其中，深度是指通孔41的轴向长度，而宽度D是指在通孔42的径向截面上，相对的两个侧边之间的距离。
可选的，准直主体41与腔室本体1同轴，即，准直主体41的轴线与腔室本体1的轴线相重合。
在实际应用中，通孔42的径向截面形状不做限定，例如可以是多边形或圆形等形状。在图3中，通孔42的径向截面形状为正六边形，且各通孔42在准直主体41中排布形成蜂窝状结构。并且，对应腔室本体1的径向截面上同一区域内的各通孔42的深宽比是相同的。
在下文中，将对应中心区域C的各通孔42的深宽比称为中心深宽比，将对应中间区域B的各通孔42的深宽比称为中间深宽比，将对应边缘区域A的各通孔42的深宽比称为边缘深宽比。
在本实施例中，中间深宽比大于中心深宽比，且中间深宽比大于边缘深宽比，即中间深宽比既大于中心深宽比，又大于边缘深宽比。这样，当靶材3产生的金属原子经过准直器4时，对应靶材3的中间区域B，会有更多的金属原子沉积在准直器4上，从而即使自中间区域B产生的金属原子比中心区域C和边缘区域A多，对应中间区域B的金属原子在经过准直器4之后的数量也会与其他两个区域的金属原子在经过准直器4之后的数量基本相同，不会有明显差别。准直器4相当于一个过滤器，其起到过滤作用，使对应不同区域经过的金属原子的数量趋于一致，从而提高了薄膜沉积的均匀性。
可选的，中心深宽比与边缘深宽比的数值相同，即中心区域C和边缘区域A具有相同的深宽比。这样，可以保证对应中心区域C和边缘区域A的金属原子在经过准直器4之后的数量相同。
进一步可选的，中间深宽比比中心深宽比大15％以上，中间深宽比比边缘深宽比大15％以上。在该范围内，可以保证对应各区域的金属原子在经过准直器4之后的数量基本相同。
另外，可选的，中心深宽比与边缘深宽比的数值均大于2。在该范围内，可以有效起到过滤作用。
在本实施例中，对应中心区域C的各通孔42的径向截面面积、中间区域B的各通孔42的径向截面面积、边缘区域A的各通孔42的径向截面面积相同。并且，中间区域B的各通孔42的深度应大于中心区域C及边缘区域A的各通孔42的深度，其中，中心区域C和边缘区域A的通孔42深度均为50mm及以上。
或者，中心区域C、中间区域B和边缘区域A也可以具有相同的通孔深 度。在这种情况下，中间区域B的各通孔的径向截面面积应小于中心区域C及边缘区域A的各通孔的径向截面面积。
在实际应用中，准直主体1的径向截面分别对应中心区域C、中间区域B和边缘区域的区域各自的大小可根据具体需要而设定，但是，准直主体1的径向截面分别对应中心区域C和边缘区域A的区域的面积之和应占准直主体1的径向横截总面积的60％以上。这样，可以保证对应中心区域C和边缘区域A的金属原子在经过准直器4之后的数量相同。
以上只是示例性说明，本实施例并不限于此。例如，中间深宽比可以大于中心深宽比和边缘深宽比中的其中一个，且中间深宽比比中心深宽比或边缘深宽比大15％以上，这样也可以起到提高薄膜沉积的均匀性、深孔底部的薄膜覆盖率以及深孔侧壁的薄膜覆盖率对称性的效果。另外，当中间深宽比大于中心深宽比和边缘深宽比时，中心深宽比与边缘深宽比的数值也可以不同，但仍然需要满足中间深宽比比中心深宽比和边缘深宽比大15％以上，以保证对应各区域的金属原子在经过准直器4之后的数量基本相同。
继续参见图2，在本实施例中，反应腔室还包括：线圈6和射频电源7，其中，线圈6沿腔体本体1的侧壁环绕设置，且位于准直器4与基座2之间，线圈6可以由一匝或多匝螺旋形线圈缠绕形成。射频电源7与线圈6电连接，用以向线圈6加载射频功率。
可选的，腔室本体1的侧壁包括沿其轴线(即，图2中的Z方向)间隔设置的上侧壁11和下侧壁12。并且，反应腔室还包括绝缘筒体112和法拉第屏蔽件132，其中，绝缘筒体112连接在上侧壁11和下侧壁12之间，线圈6环绕设置在绝缘筒体112的外侧。法拉第屏蔽件132环绕设置在绝缘筒体112的内侧。具体来说，射频电源7向线圈6提供射频功率，以使线圈6产生电磁场，该电磁场经绝缘筒体112耦合至腔室本体1内。
上述线圈6和射频电源7构成一辅助等离子体激励源。如图5所示，在 工艺时，腔室本体1内通入例如氩气的工艺气体，除上电极组件5的等离子体激励源504可激励工艺气体产生等离子体外，线圈6发出的能量能够耦合至腔室本体1内，激励氩气产生第二等离子体Ar+101。在基座2的负偏压作用下，第二等离子体Ar+101加速轰击待加工工件X上的深孔底部的薄膜，使深孔底部已经沉积的一部分金属M102沉积到深孔的两个侧壁，由此提高了深孔侧壁的覆盖率。
另外，由于使线圈6位于等离子体环境外部，不会被污染，因此，不需要对线圈6单独进行更换，减少了使用成本。
在本实施例中，上侧壁11和下侧壁12采用金属材料制作并接地，绝缘筒体112采用陶瓷、石英等绝缘材料制成。
在本实施例中，反应腔室还包括上内衬131和下内衬133。其中，上内衬131环绕设置在上侧壁11的内侧，用以保护上侧壁11不被污染。准直器4与上内衬131固定连接。可选的，准直器4可以与上内衬131一体加工而成，也可以通过连接件悬挂在上内衬131上。
上内衬131的顶端通过适配器14固定于上侧壁11上，下内衬33环绕设置在下侧壁12与基座2之间，且下内衬33的一端通过适配器15固定于下侧壁12上，另一端延伸至基座2。下内衬33用于保护下侧壁12和底壁13不被污染。
法拉第屏蔽件132用于保护绝缘筒体112不被污染，提高了绝缘筒体112的使用寿命，降低了使用成本。
上内衬131和下内衬133通过适配器接地，法拉第屏蔽件132设置为悬浮电位，并通过陶瓷或石英等绝缘材料与接地的上内衬131和下内衬133进行隔绝。如图5所示，法拉第屏蔽件132可通过陶瓷材料的绝缘柱16固定于适配器14上，以悬挂在腔室本体1，使其电位悬浮。通过将法拉第屏蔽件132的电位设置为悬浮，可以使线圈6产生的更多的射频能量通过法拉第屏蔽件 132耦合进腔室本体1内，进一步提高了能量耦合效率。当然，在实际应用中，法拉第屏蔽件132也可以接地或者连接电气元件使其处于不同电位。
可选的，为了防止法拉第屏蔽件132对线圈6发出的能量产生涡流损耗和发热，如图5所示，法拉第屏蔽件132上设置有至少一个开缝1321，该开缝沿法拉第屏蔽件132轴向设置，即，沿图2所示Z方向延伸。开缝1321为多个时，可以沿法拉第屏蔽件132的周向间隔排布。
在本实施例中，法拉第屏蔽件132在开缝1321处完全断开，即，各开缝1321将法拉第屏蔽件132分为互不接触的板材。这样，可以有效防止涡流损耗和发热，使线圈6的能量可以有效耦合至腔室本体1内。
在实际应用中，法拉第屏蔽件132的开缝数量也可以少于或多于四个。
可选的，各开缝1321在法拉第屏蔽件132的圆周方向上的宽度小于10mm。
综上所述，本公开实施例提供的反应腔室，其通过在腔室本体内，且位于靶材与基座之间准直器，可以使自靶材逸出的金属原子经过准直器后具有良好的方向性，以能够在入射到待加工工件上时更容易沉积至深孔底部，并且能够更均匀地沉积至深孔的两个侧壁，从而提高了深孔底部的薄膜覆盖率以及深孔侧壁的薄膜覆盖率对称性。同时，准直器还能够对靶材各区域产生的金属原子进行不同程度的过滤，以起到降低沉积速率的作用，从而可以在更薄的薄膜沉积工艺中更加精确地控制薄膜生长。
本公开另一实施例提供了一种半导体加工设备，该半导体加工设备为磁控溅射物理气相沉积设备，可以用于Cu、Ta、Ti、Al等溅射材料及薄膜的制备。半导体加工设备包括上一实施例的反应腔室。
本公开实施例提供的半导体加工设备，其通过采用本公开实施例提供的上述反应腔室，可以提高深孔底部的薄膜覆盖率以及深孔侧壁的薄膜覆盖率对称性。
需要说明的是，实施例中提到的方向用语，例如“上”、“下”、“前”、“后”、“左”、“右”等，仅是参考附图的方向，并非用来限制本公开的保护范围。贯穿附图，相同的元素由相同或相近的附图标记来表示。在可能导致对本公开的理解造成混淆时，将省略常规结构或构造。
并且图中各部件的形状和尺寸不反映真实大小和比例，而仅示意本公开实施例的内容。另外，在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。
除非有所知名为相反之意，本说明书及所附权利要求中的数值参数是近似值，能够根据通过本公开的内容所得的所需特性改变。具体而言，所有使用于说明书及权利要求中表示组成的含量、反应条件等等的数字，应理解为在所有情况中是受到「约」的用语所修饰。一般情况下，其表达的含义是指包含由特定数量在一些实施例中±10％的变化、在一些实施例中±5％的变化、在一些实施例中±1％的变化、在一些实施例中±0.5％的变化。
再者，单词“包含”不排除存在未列在权利要求中的元件或步骤。位于元件之前的单词“一”或“一个”不排除存在多个这样的元件。
此外，除非特别描述或必须依序发生的步骤，上述步骤的顺序并无限制于以上所列，且可根据所需设计而变化或重新安排。并且上述实施例可基于设计及可靠度的考虑，彼此混合搭配使用或与其他实施例混合搭配使用，即不同实施例中的技术特征可以自由组合形成更多的实施例。
类似地，应当理解，为了精简本公开并帮助理解各个公开方面中的一个或多个，在上面对本公开的示例性实施例的描述中，本公开的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而，并不应将该公开的方法解释成反映如下意图：即所要求保护的本公开要求比在每个权利要求中所明确记载的特征更多的特征。更确切地说，如下面的权利要求书所反映的那样，公开方面在于少于前面公开的单个实施例的所有特征。因此，遵循 具体实施方式的权利要求书由此明确地并入该具体实施方式，其中每个权利要求本身都作为本公开的单独实施例。
以上所述的具体实施例，对本公开的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本公开的具体实施例而已，并不用于限制本公开，凡在本公开的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (17)

  1. 一种反应腔室，其特征在于，包括：
    腔室本体；
    基座，设置在所述腔室本体内，用于承载待加工工件；
    靶材，设置在所述腔室本体内，且位于所述基座的上方；以及
    准直器，设置在所述腔室本体内，且位于所述靶材与所述基座之间，用以提高所述待加工工件上的深孔底部的薄膜覆盖率以及深孔侧壁的薄膜覆盖率对称性。
  2. 根据权利要求1所述的反应腔室，其特征在于，所述准直器包括准直主体，在所述准直主体中，且分别与在所述靶材所在平面上划分的中心区域、中间区域及边缘区域相对应的区域，均包括多个沿所述腔室本体的轴向延伸的通孔，其中，对应所述中间区域的各通孔的深宽比大于对应所述中心区域的各通孔的深宽比和对应所述边缘区域的各通孔的深宽比二者中的至少一者。
  3. 如权利要求2所述的反应腔室，其特征在于，对应所述中间区域的各通孔的深宽比大于对应所述中心区域的各通孔的深宽比，对应所述中间区域的各通孔的深宽比大于对应所述边缘区域的各通孔的深宽比。
  4. 如权利要求3所述的反应腔室，其特征在于，对应所述中心区域的各通孔的深宽比和对应所述边缘区域的各通孔的深宽比相同。
  5. 如权利要求2-4任意一项所述的反应腔室，其特征在于，对应所述中间区域的各通孔的深宽比比对应所述中心区域的各通孔的深宽比大15％以上；对应所述中间区域的各通孔的深宽比比对应所述边缘区域的各通孔的 深宽比大15％以上。
  6. 如权利要求2或3所述的反应腔室，其特征在于，对应所述中心区域的各通孔的深宽比与对应所述边缘区域的各通孔的深宽比的数值均大于2。
  7. 如权利要求2或3所述的反应腔室，其特征在于，对应所述中心区域的各所述通孔的径向截面面积、对应所述中间区域的各所述通孔的径向截面面积及对应所述边缘区域的各所述通孔的径向截面面积相同，且对应所述中间区域的各通孔的深度大于对应所述中心区域的各通孔的深度，对应所述中间区域的各通孔的深度大于对应所述边缘区域的各通孔的深度。
  8. 如权利要求2或3所述的反应腔室，其特征在于，对应所述中心区域的各通孔的深度、对应所述中间区域的各通孔的深度及对应所述边缘区域的各通孔的深度相同，且对应所述中间区域的各所述通孔的径向截面面积小于对应所述中心区域的各所述通孔的径向截面面积，对应所述中间区域的各所述通孔的径向截面面积小于对应所述边缘区域的各所述通孔的径向截面面积。
  9. 如权利要求2所述的反应腔室，其中，所述准直主体的径向截面的分别对应中心区域和所述边缘区域的区域的面积之和占所述准直主体的径向截面总面积的60％以上。
  10. 如权利要求1所述的反应腔室，其特征在于，所述反应腔室还包括：
    线圈，沿所述腔室本体的侧壁环绕设置，且位于所述准直器与所述基座之间；
    射频电源，与所述线圈电连接。
  11. 如权利要求10所述的反应腔室，其特征在于，所述腔室本体的侧壁包括沿其轴线间隔设置的上侧壁和下侧壁；所述反应腔室还包括：
    绝缘筒体，连接在所述上侧壁和下侧壁之间，所述线圈环绕设置在所述绝缘筒体的外侧；
    法拉第屏蔽件，环绕设置在所述绝缘筒体的内侧。
  12. 如权利要求11所述的反应腔室，其特征在于，所述反应腔室还包括：
    上内衬，环绕设置在所述上侧壁的内侧，所述准直器与所述上内衬固定连接；
    下内衬，环绕设置在所述下侧壁与所述基座之间。
  13. 如权利要求11所述的反应腔室，其特征在于，所述法拉第屏蔽件的电位悬浮。
  14. 如权利要求11所述的反应腔室，其特征在于，所述法拉第屏蔽件上设置有至少一个开缝，所述开缝沿所述法拉第屏蔽件的轴向设置。
  15. 如权利要求14所述的反应腔室，其特征在于，所述开缝在所述法拉第屏蔽件的圆周方向上的宽度小于10mm。
  16. 如权利要求1所述的反应腔室，其特征在于，所述准直器所采用的材料包括铝或者不锈钢。
  17. 一种半导体加工设备，包括如权利要求1-16任一项所述的反应腔室。
PCT/CN2019/113726 2018-10-31 2019-10-28 反应腔室及半导体加工设备 WO2020088415A1 (zh)

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