WO2022064810A1 - ターゲットおよび成膜装置 - Google Patents
ターゲットおよび成膜装置 Download PDFInfo
- Publication number
- WO2022064810A1 WO2022064810A1 PCT/JP2021/025512 JP2021025512W WO2022064810A1 WO 2022064810 A1 WO2022064810 A1 WO 2022064810A1 JP 2021025512 W JP2021025512 W JP 2021025512W WO 2022064810 A1 WO2022064810 A1 WO 2022064810A1
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- WIPO (PCT)
- Prior art keywords
- target
- film forming
- shield member
- forming apparatus
- inner diameter
- Prior art date
Links
- 238000012856 packing Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 17
- 239000002245 particle Substances 0.000 description 15
- 238000000926 separation method Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000001687 destabilization Effects 0.000 description 5
- -1 argon ions Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Definitions
- the present invention relates to a technique for manufacturing a target, a film forming apparatus, and a film forming object, for example, a technique for forming a film on a film forming object by using plasma.
- Patent Document 1 describes a target member by colliding an ion contained in a plasma generated by using an electron cyclotron resonance phenomenon (ECR) with the target member. Describes a technique for forming a film on a film-forming object by adhering the target particles jumping out of the film onto the film-forming object.
- ECR electron cyclotron resonance phenomenon
- ions contained in the plasma are made to collide with the target member, and the target particles ejected from the target member are adhered to the film-forming object to form a film on the film-forming object.
- shield members are arranged to prevent the support member supporting the target member from being irradiated with plasma.
- the shield member is arranged so as to be separated from the target member in order to suppress a short circuit with the target member.
- the film forming apparatus in one embodiment includes a work holding section for holding a film forming object, a plasma generating section for generating plasma, a target provided between the work holding section and the plasma generating section, and a target. It includes a ring-shaped first shield member provided between the target and the plasma generating portion, and a ring-shaped second shield member provided between the target and the work holding portion.
- the target has a cylindrical target member and a support member arranged around the target member and supporting the target member.
- Each of the first shield member, the second shield member, and the target member is laminated in the first direction with the first axis extending in the first direction as a central axis, and in the first direction, the first shield member.
- the target member and the second shield member are arranged so as to be separated from each other, and the inner diameter of the first shield member is smaller than the inner diameter of the target member.
- the inner diameter of the first shield member included in the film forming apparatus according to another embodiment is smaller than the inner diameter of the second shield member.
- the first shield member included in the film forming apparatus includes a first portion that overlaps with the support member of the target in the first direction, and a second portion that does not overlap with the target in the first direction. , Have.
- the thickness of the second portion is thinner than the thickness of the first portion. Assuming that the surface of the target member including the surface facing the first shield member is used as the reference surface, the shortest distance from the second portion to the reference surface is the shortest distance from the first portion to the reference surface. Greater.
- the first shield member has a stepped portion between the first portion and the second portion.
- the thickness of the portion outside the step portion is equal to the thickness of the first portion.
- the thickness of the portion inside the step portion is equal to the thickness of the second portion.
- the step portion provided in the film forming apparatus according to another embodiment overlaps with the target member in the first direction.
- the surface on the target side of the second portion of the film forming apparatus is an inclined surface inclined with respect to the second direction orthogonal to the first direction.
- the inner diameter of the first shield member is 90% or more with respect to the inner diameter of the target member.
- the inner diameter of the first shield member of the film forming apparatus is 99% or less with respect to the inner diameter of the target member.
- sputtering can be stabilized even when deposits are formed on the shield member.
- FIG. 1 shows the schematic structure of the film forming apparatus. It is a flowchart which shows each process of the film-forming method performed using the film-forming apparatus shown in FIG. It is a perspective view which shows the appearance structure of the target used in the film forming apparatus of FIG. It is a perspective view which shows the appearance structure of the shield member used in the film forming apparatus of FIG. It is sectional drawing which shows the positional relationship between a shield member and a target in a film forming apparatus. It is sectional drawing which shows the positional relationship between a shield member and a target in a film forming apparatus which is an example of examination with respect to FIG. FIG.
- FIG. 6 is an enlarged cross-sectional view showing a state in which the target member is sputtered in a part of the target and the shield member shown in FIG.
- FIG. 5 is an enlarged cross-sectional view showing a state in which the target member is sputtered in a part of the target and the shield member shown in FIG.
- It is an enlarged sectional view which shows the modification with respect to the film forming apparatus shown in FIG.
- FIG. 3 is an enlarged cross-sectional view showing a modification of the film forming apparatus shown in FIG. 9.
- FIG. 1 is a diagram showing a schematic configuration of a film forming apparatus.
- the film forming apparatus 1 has a chamber 10 which is a film forming chamber.
- a work holding portion 11 is arranged in the chamber 10, and the work holding portion 11 holds, for example, a film forming object SUB represented by a substrate.
- the chamber 10 is provided with a gas introduction port 10a and a gas exhaust port 10b.
- the chamber 10 is provided with a plasma generation unit 13 at a position facing the film forming object SUB held by the work holding unit 11.
- the plasma generation unit 13 is configured to generate plasma, and a magnetic field generation unit 14 composed of, for example, a coil is arranged around the plasma generation unit 13.
- a waveguide 15 is connected to the plasma generation unit 13, and microwaves propagating through the waveguide 15 are introduced into the plasma generation unit 13.
- a target TA having a cylindrical shape is arranged between the work holding unit 11 and the plasma generation unit 13 at a position close to the plasma generation unit 13, and the target TA is a high-frequency power supply and a direct current. It is electrically connected to a power source and a power source 16 capable of supplying pulse power.
- the target TA is configured so that a high frequency voltage from the power supply 16 is applied.
- This target TA is fixed by the fixing portion 17.
- the film forming apparatus 1 has a ring-shaped shield member (first shield member) 30 and a ring-shaped shield member (second shield member) 40.
- first shield member the shield member 30
- second shield member the shield member 40
- the shield member 30 is provided between the target TA and the plasma generation unit 13 in the Z direction.
- the shield member 40 is provided between the target TA and the work holding portion 11.
- FIG. 2 is a flowchart showing each step of the film forming method performed by using the film forming apparatus shown in FIG.
- a gas typified by, for example, argon gas is introduced into the plasma generation unit 13.
- a magnetic field is generated from the magnetic field generation unit 14 arranged around the plasma generation unit 13
- the electrons contained in the gas introduced into the plasma generation unit 13 receive Lorentz force and make a circular motion.
- a microwave electromagnettic wave
- the energy of the microwave is efficiently supplied to the circularly moving electrons (electron cyclotron resonance phenomenon) (step S101 in FIG. 2).
- the kinetic energy of the electrons contained in the gas increases, and the gas separates into positive ions and electrons.
- a plasma composed of positive ions and electrons is generated (step S102 in FIG. 2).
- a high frequency voltage is supplied from the power supply 16 to the target TA.
- the positive potential and the negative potential are alternately applied to the target TA to which the high frequency voltage is supplied.
- the electrons having a light mass can follow the high frequency voltage applied to the target TA, while the positive ions having a heavy mass follow the high frequency voltage. Can not do it.
- the positive potential that attracts the following electrons is canceled by the negative charge of the electrons, while the negative potential remains, so that the average value of the high frequency power shifts from 0V to the negative potential.
- the target particles constituting the target TA receive a part of the kinetic energy of the positive ions and jump out from the target TA into the internal space of the chamber 10 (step S104 in FIG. 2). .. After that, a part of the target particles that have jumped out into the internal space of the chamber 10 adheres to the surface of the film-forming object SUB held by the work holding portion 11 (step S105 in FIG. 2). By repeating such a phenomenon, a large number of target particles adhere to the surface of the film-forming object SUB, and as a result, a film is formed on the surface of the film-forming object SUB (step S106 in FIG. 2). ..
- the target TA is made of aluminum
- the target particles are aluminum atoms
- the film formed on the film-forming object SUB is an aluminum film.
- the film forming operation is performed while introducing oxygen gas or nitrogen gas from the gas introduction port 10a provided in the chamber 10 of the film forming apparatus 1 shown in FIG. 1, the film forming object SUB is exposed to the surface of the film forming object SUB.
- the target TA is composed of silicon
- the target particles are silicon atoms
- the film formed on the film-forming object SUB is a silicon film.
- the film forming object SUB is exposed to the surface of the film forming object SUB.
- the film forming apparatus 1 described above irradiates the SUB of the film forming object with a plasma flow created by utilizing the electron cyclotron resonance phenomenon (ECR) and the divergent magnetic field, and at the same time, applies a high frequency voltage between the target TA and the ground.
- ECR electron cyclotron resonance phenomenon
- This is a method of forming a film on the film-forming object SUB by colliding the ions in the plasma with the target TA. If this film forming method is called an ECR sputtering method, this ECR sputtering method has the following advantages.
- the ECR plasma flow and the particles sputtered are irradiated on the SUB of the film-forming object.
- the ions of the ECR plasma flow have an energy of 10 eV to several tens of eV, and because of the low pressure, the ion current density of the ions reaching the film-forming object SUB can be increased. Therefore, the ions of the ECR plasma flow give energy to the raw material particles that are sputtered and fly onto the film forming object SUB, and promote the bonding reaction between the raw material particles and oxygen.
- the film quality of the film deposited on the object SUB is improved.
- it is particularly advantageous that a high-quality film can be formed on the film-forming object at a low substrate temperature (the temperature of the film-forming object SUB).
- the film forming apparatus 1 is excellent in that it can form a high-quality film.
- the film forming apparatus 1 is extremely excellent in that a high-quality film can be formed on the surface of the film-forming object without exposing the film-forming object SUB to a high temperature. That is, it can be said that the film forming apparatus 1 is extremely excellent in that a high-quality film can be formed on the surface of the film forming object SUB while reducing the damage given to the film forming object SUB.
- FIG. 3 is a perspective view showing an external configuration of a target used in the film forming apparatus of FIG.
- the target TA has a cylindrical shape.
- the target TA has, for example, a cylindrical backing tube (support member) 20 made of a copper material, and a bonding material (adhesive) (not shown) on the inner wall of the backing tube 20 has a cylindrical shape made of, for example, aluminum.
- the target member 21 is adhered.
- the film forming object SUB shown in FIG. 1 is compared with the case of using the generally used disk-shaped target.
- the damage done can be reduced.
- ions for example, argon ions
- ions that bounce back after colliding with the target member 21 are the objects to be formed. The probability of colliding with the SUB is reduced.
- FIG. 4 is a perspective view showing an external configuration of a shield member used in the film forming apparatus of FIG.
- FIG. 5 is a cross-sectional view showing the positional relationship between the shield member and the target in the film forming apparatus. As shown in FIG. 4, each of the shield members 30 and 40 has a ring shape.
- each of the shield member 30, the shield member 40, and the target member 21 is laminated in the Z direction with the axis (virtual line) VL1 extending in the Z direction as the central axis.
- the shield member 30, the target member 21, and the shield member 40 are laminated in this order from the plasma generation unit 13 (see FIG. 1) side so as to be separated from each other.
- the shield members 30 and 40 are protective members for suppressing the collision of plasma with the backing tube 20 holding the target member 21. By arranging the shield members 30 and 40 at positions overlapping the target member 21 in the Z direction, it is possible to reduce the frequency of plasma collisions with the backing tube 20 arranged outside the target member 21. As a result, sputtering due to plasma to the backing tube 20 can be suppressed.
- the shield members 30 and 40 are arranged so as to face each other with the target member 21 sandwiched in the Z direction. As a result, it is possible to prevent the high frequency voltage supplied to the target TA from diffusing around the target member 21.
- the shield members 30 and 40 have a function as a diffusion prevention member that prevents the diffusion of the high frequency voltage supplied to the target TA.
- each of the shield members 30 and 40 is preferably made of a metal material.
- the metal material constituting the shield members 30 and 40 include stainless steel.
- each of the shield members 30 and 40 is arranged apart from the target member 21. In other words, each of the shield members 30 and 40 is electrically separated from the target member 21.
- the separation distance is preferably small.
- the separation distance G1 between the target member 21 and the shield member 30 and the separation distance G2 between the target member 21 and the shield member 30 are preferably 5 mm or less, preferably 3 mm or less. It is particularly preferable to have. However, each of the separation distances G1 and G2 needs to be larger than 0 mm.
- the plasma generated by the plasma generation unit 13 passes through the opening 30H of the ring-shaped shield member 30 and collides with the target member 21. Therefore, in order to efficiently collide the plasma ions with the target member 21, it is considered preferable that the inner diameter D1 of the opening 30H of the shield 30 is the same as the inner diameter D2 of the cylindrical target member 21. Was there.
- FIG. 6 is a cross-sectional view showing the positional relationship between the shield member and the target in the film forming apparatus which is an example of examination with respect to FIG.
- FIG. 7 is an enlarged cross-sectional view showing a state in which the target member is sputtered in a part of the target and the shield member shown in FIG.
- the inner diameter D2 of the target member 21 described in the present specification means the inner diameter D2 of the target member 21 in a new state before the plasma irradiation treatment, unless it is clearly stated that the meaning is different. ..
- the thickness of the target member 21 gradually decreases, so that the value of the inner diameter D2 also changes. Therefore, in the present specification, as a general rule, the value of the inner diameter D2 of the new target member 21 is used as an index.
- the film forming apparatus 100 shown in FIG. 6 is different from the film forming apparatus 100 shown in FIG. 5 in that the inner diameter D2 of the target member 21 and the inner diameter D1 of the shield member 30 are the same. Other points are the same as those of the film forming apparatus 1 shown in FIG.
- Each of the target member 21 and the shield member 30 is arranged with the axis VL1 as the central axis. Therefore, each of the inner wall surface 21a of the target member 21 and the inner wall surface 30a of the shield member 30 are arranged flush with each other in the Z direction (in other words, they are arranged in the same plane). In such a configuration, by setting the value of the separation distance G1 to 5 mm or less, it is possible to suppress the collision of plasma ions with the backing tube 20. Further, since the entire target member 21 is superimposed on the shield member 30 in the Z direction, it is possible to prevent the high frequency voltage supplied to the target TA from diffusing around the target member 21.
- the film forming apparatus 100 has the following problems due to the deposit 50 (see FIG. 7) deposited on the shield member 30.
- the deposit 50 is conductive.
- the target member 21 deposits with the shield member 30 due to the bias voltage generated at the time of discharge and the electric power supplied from the power source. An abnormal discharge may occur between the object 50 and the object 50, and the film formation may become unstable.
- each of the deposits 50 and 51 shown in FIG. 7 is a substance formed by adhering a part of the target particles to the shield member 30 or 40. Therefore, if the film formation treatment is performed, the deposits 50 and 51 grow.
- FIG. 8 is an enlarged cross-sectional view showing a state in which the target member is sputtered in a part of the target and the shield member shown in FIG.
- the inner diameter D1 of the opening 30H of the shield 30 is the inner diameter D2 of the cylindrical target member 21 (as described above, the target member 21 in a new state before the film forming process is performed). It is smaller than the inner diameter D2) of.
- the cylindrical target TA is arranged between the plasma generation unit 13 and the film-forming object SUB.
- the plasma density on the plasma generation unit 13 side of the target TA is higher than the plasma density on the SUB side of the film forming object of the target TA.
- the plasma density on the SUB side of the film-forming object of the target TA is lower than the plasma density on the plasma generation unit 13 side of the target TA.
- the distribution of plasma density in the Z direction in the vicinity of the target member 21 is higher on the shield member 30 side than on the shield member 40 side, so that the shield member 30 of the target member 21 On the side, the frequency of the sputtering phenomenon is higher than that on the shield member 40 side.
- the degree of consumption of the target member 21 the consumption of the target member 21 on the shield member 30 side of the target TA is larger than that on the shield member 40 side of the target TA.
- the deposits 50 and 51 are deposits composed of target particles ejected by the target member 21 being sputtered, the deposit 50 formed on the shield member 30 having a relatively high frequency of sputtering phenomenon is the shield member 40.
- the growth rate is faster than the deposit 51 formed in.
- the inner wall surface 30a of the shield member 30 is larger than the inner wall surface 21a of the target member 21. Also protrudes inward. In other words, in the Z direction, the target member 21 is covered with the inner hiss portion (visor portion) 31 of the shield member 30. Since the plasma ions reach the target member 21 via the opening inside the shield member 30, when the shield member 30 includes the hiss portion 31, the plasma is generated in the vicinity of the shield member 30 among the target members 21. It is possible to suppress the increase in density.
- the deposit 50 is mainly formed near the boundary with the opening 30H (see FIG. 5) of the shield member 30. Therefore, as shown in FIG. 8, even if the deposit 50 grows by increasing the length L31 in which the hisashi portion 31 protrudes in the X direction orthogonal to the Z direction, the target member 21 and the deposit 50 It is difficult for the separation distance to be small. Therefore, it is possible to prevent the destabilization of the film formation applied to the target member 21 or the occurrence of a short circuit between the target member 21 and the shield member 30. In other words, it can be used without replacing the shield member 30 until the target member 21 is consumed, while suppressing the destabilization of the film formation and the short circuit of the shield member 30. In other words, the sputtering can be stabilized even when the deposit 50 is formed.
- the length L31 at which the hiss portion 31 protrudes in the X direction orthogonal to the Z direction is defined as follows. That is, the surface of the backing tube 20 facing the target member 21 is referred to as the target holding surface 20a. At this time, the length L31 is defined as the length L31 with the position of the shield member 30 overlapping the extension surface of the target holding surface 20a as the reference position and the distance from this reference position to the inner wall surface 30a of the shield member 30. .. According to this definition, the length L31 is at least larger than the thickness of the target member 21 in a new state.
- the inner diameter D1 of the shield member 30 is preferably 99% or less with respect to the inner diameter D2.
- the inner diameter D1 is preferably 96% or less with respect to the inner diameter D2.
- each of the separation distances G1 and G2 is, for example, 3 mm.
- the thickness of the target member 21 in a new state is, for example, 3 mm.
- the inner diameter D2 (see FIG. 5) of the target member 21 is, for example, 120 mm.
- the inner diameter D1 (see FIG. 5) of the shield member 30 is 114 mm. In this case, the inner diameter D1 is 96% of the inner diameter D2.
- the length L31 at which the hiss portion 31 protrudes is 3.0 mm.
- the thickness (length in the Z direction) of the shield member 30 is, for example, 2 mm.
- the deposit 51 formed in the shield layer 40 shown in FIG. 5 is even smaller than the deposit 50. Therefore, each of the inner wall surface 21a of the target member 21 and the inner wall surface 40a of the shield member 40 are arranged flush with each other in the Z direction (in other words, they are arranged in the same plane). Therefore, when the inner diameter D1 of the shield member 30 and the inner diameter D3 of the shield member 40 are compared, it can be expressed as follows. That is, the inner diameter D1 of the shield member 30 is smaller than the inner diameter D3 of the shield member 40.
- the inner diameter D3 of the shield member 40 is smaller than the inner diameter D2 of the target member 21 as a modification with respect to FIG.
- this modification it is possible to suppress the destabilization of the high frequency voltage due to the influence of the deposit 51.
- the deposit 51 since the deposit 51 is harder to grow than the deposit 50, even with the structure shown in FIG. 5, the deposit 51 may grow to the extent that the high frequency voltage becomes unstable. Is low.
- the opening 40H is large.
- the inner diameter D1 of the shield member 30 is smaller than the inner diameter D3 of the shield member 40, the target particles can be efficiently reached to the film forming object SUB.
- FIG. 9 is an enlarged cross-sectional view showing a modified example of the film forming apparatus shown in FIG.
- the film forming apparatus 101 shown in FIG. 9 is the same as the film forming apparatus 1 shown in FIG. 1, except for the differences described below.
- the shield member 30A of the film forming apparatus 101 has a ring shape like the shield member 30 shown in FIG.
- the ring-shaped shield member 30A has a structure similar to the enlarged cross section shown in FIG. 9 over the entire circumference.
- FIG. 9 in order to clearly show the positional relationship between the target member 21 in a new state and the portion 34, unlike FIG. 8, the target member 21 in a new state before being consumed is shown.
- the film forming apparatus 101 shown in FIG. 9 is different from the film forming apparatus 1 shown in FIG. 8 in the following points. That is, the shield member 30A of the film forming apparatus 101 has a portion (first portion) 33 that overlaps with the backing tube 20 of the target TA in the Z direction and a portion (second portion) 34 that does not overlap with the target TA in the Z direction. Have.
- the portion 34 is a portion that does not overlap with the target TA even in a new state before the target member 21 is consumed.
- the thickness T2 of the portion 34 is thinner than the thickness T1 of the portion 33.
- the shortest distance from the portion 34 to the reference surface 21b is larger than the shortest distance from the portion 33 to the reference surface 21b. In other words, in the portion 34 that does not overlap with the target TA, the surface on the target TA side is scraped and the portion 34 is thinned.
- the space between the portion 34 and the target member 21 can be increased. Since the deposit 50 is formed on the portion 34, the thinner the thickness of the portion 34, the farther the distance between the deposit 50 and the target member 21 can be.
- the separation distance between the deposit 50 and the target member 21 can be secured in the Z direction. Therefore, as compared with the case of the film forming apparatus 1 described with reference to FIG. 8, the high frequency voltage becomes unstable even when the length L31 is shortened, or the shield member 30A and the target member 21 are short-circuited. Can be suppressed.
- the thickness T2 of the portion 34 needs to be thick enough not to deform the portion 34, but it is preferably as thin as possible.
- the thickness T1 is 2 mm and the thickness T2 is 1 mm.
- the portion 34 has a uniform thickness. That is, the shield member 30A has a stepped portion 35 between the portion 33 and the portion 34.
- the thickness of the portion outside the step portion 35 is equal to the thickness of the portion 33, and the thickness of the portion inside the step portion 35 (on the opening side of the shield member 30A) is Equal to the thickness of portion 34. In this way, when the thickness T2 of the portion 34 is uniform, it is possible to secure the separation distance between the target member 21 and the deposit 50 regardless of the position of the deposit 50 formed in the portion 34. can.
- the step portion 35 overlaps with the target member 21 in the Z direction.
- the position of the step portion 35 may be a position overlapping with the backing tube 20 or a position overlapping with the fixing portion 17.
- the distance between the backing tube 20 and the shield member 30A is short.
- FIG. 10 is an enlarged cross-sectional view showing another modification with respect to FIG.
- the film forming apparatus 102 shown in FIG. 10 is the same as the film forming apparatus 101 described with reference to FIG. 9, except for the differences described below. Hereinafter, the differences from the film forming apparatus 101 will be described, and overlapping description will be omitted in principle.
- the shield member 30B of the film forming apparatus 102 has a ring shape like the shield member 30 shown in FIG.
- the ring-shaped shield member 30B has a structure similar to the enlarged cross section shown in FIG. 10 over the entire circumference.
- FIG. 10 in order to clearly show the positional relationship between the target member 21 in a new state and the portion 34, unlike FIG. 8, the target member 21 in a new state before being consumed is shown.
- the film forming apparatus 102 shown in FIG. 10 is different from the film forming apparatus 101 shown in FIG. 9 in that the surface of the portion 34 on the target TA side is an inclined surface inclined with respect to the X direction orthogonal to the Z direction. It's different.
- the step portion 35 shown in FIG. 9 does not exist.
- the thickness T2 of the portion 34 becomes smaller as it approaches the inner tip of the shield member 30B.
- the starting point 36 of the inclined surface is at a position overlapping with the target member 21.
- the inclination angle of the inclined surface with respect to the X direction is uniform. Therefore, even in the place where the thickness T2 of the portion 34 is the thickest, the thickness T2 is thinner than the thickness T1 of the portion 33.
- the tip portion (the portion closer to the opening 30H shown in FIG. 5) than the shield member 30A.
- the thickness can be reduced.
- the shield member 30B shown in FIG. 10 is more advantageous than the shield member 30A shown in FIG.
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Abstract
Description
図1は、成膜装置の模式的な構成を示す図である。図1において、成膜装置1は、成膜室であるチャンバ10を有する。このチャンバ10には、ワーク保持部11が配置されており、このワーク保持部11によって、例えば、基板に代表される成膜対象物SUBが保持されている。このチャンバ10には、ガス導入口10aとガス排気口10bとが設けられている。
続いて、成膜装置1を用いた成膜方法について説明する。図2は、図1に示す成膜装置を用いて行う成膜方法の各工程を示すフローチャートである。
上述した成膜装置1は、電子サイクロトロン共鳴現象(ECR)と発散磁場を利用して作られたプラズマ流を成膜対象物SUBに照射し、同時に、ターゲットTAとグランドとの間に高周波電圧を加えることにより、プラズマ中のイオンをターゲットTAに衝突させて成膜対象物SUBに膜を形成する方法である。この成膜方法をECRスパッタリング法と呼ぶことにすると、このECRスパッタリング法には、以下に示す利点がある。
図3は、図1の成膜装置で使用されるターゲットの外観構成を示す斜視図である。図3に示すように、ターゲットTAは、円筒形状から成る。ターゲットTAは、例えば、銅材からなる円筒形状のバッキングチューブ(支持部材)20を有し、このバッキングチューブ20の内壁に、図示しないボンディング材(接着材)によって、例えば、アルミニウムからなる円筒形状のターゲット部材21が接着されている。
図4は、図1の成膜装置で使用されるシールド部材の外観構成を示す斜視図である。図5は、成膜装置内におけるシールド部材とターゲットとの位置関係を示す断面図である。図4に示すように、シールド部材30および40のそれぞれは、リング形状から成る。
次に、図5および図8に示す成膜装置に対する変形例について説明する。図9は、図8に示す成膜装置に対する変形例を示す拡大断面図である。なお、図9に示す成膜装置101は、以下で説明する相違点を除き、図1に示す成膜装置1と同様である。以下では成膜装置1との相違点について説明し、重複する説明は原則として省略する。また、成膜装置101のシールド部材30Aは、図4に示すシールド部材30と同様にリング形状を成す。リング状のシールド部材30Aは全周に亘って図9に示す拡大断面と同様の構造を備える。また、図9では、新品状態のターゲット部材21と部分34との位置関係を明示するため、図8とは異なり、消費される前の新品状態のターゲット部材21を図示している。
10 チャンバ
10a ガス導入口
10b ガス排気口
11 ワーク保持部
13 プラズマ生成部
14 磁場発生部
15 導波管
16 電源
17 固定部
20 バッキングチューブ(支持部材)
20a 内壁面
20a ターゲット保持面
21 ターゲット部材
21a 内壁面
21b 基準面
30,30A,30B シールド部材(第1シールド部材)
30a 内壁面
30H,40H 開口部
31 ヒサシ部分(バイザー部分)
33 部分(第1部分)
34 部分(第2部分)
35 段差部
36 起点
40 シールド部材(第2シールド部材)
40a 内壁面
50,51 堆積物
D1,D2,D3 内径
G1,G2 離間距離
S101~S106 ステップ
SUB 成膜対象物
TA ターゲット
VL1 軸(仮想線)
Claims (8)
- 成膜対象物を保持するワーク保持部と、
プラズマを生成するプラズマ生成部と、
前記ワーク保持部と前記プラズマ生成部との間に設けられたターゲットと、
前記ターゲットと前記プラズマ生成部との間に設けられたリング形状の第1シールド部材と、
前記ターゲットと前記ワーク保持部との間に設けられたリング形状の第2シールド部材と、
を備え、
前記ターゲットは、
円筒形状のターゲット部材と、
前記ターゲット部材の周囲に配置され、前記ターゲット部材を支持する支持部材と、
を有し、
前記第1シールド部材、前記第2シールド部材、および前記ターゲット部材のそれぞれは、第1方向に延びる第1軸を中心軸として第1方向に積層され、
前記第1方向において、前記第1シールド部材、前記ターゲット部材、および前記第2シールド部材のそれぞれは、互いに離間するように配置され、
前記第1シールド部材の内径は、前記ターゲット部材の内径より小さい、成膜装置。 - 請求項1に記載の成膜装置において、
前記第1シールド部材の内径は、前記第2シールド部材の内径より小さい、成膜装置。 - 請求項1に記載の成膜装置において、
前記第1シールド部材は、前記第1方向において前記ターゲットの前記支持部材と重なる第1部分と、前記第1方向において前記ターゲットと重ならない第2部分と、を有し、
前記第2部分の厚さは、前記第1部分の厚さより薄く、
前記ターゲット部材のうち、前記第1シールド部材と対向する面を含む面を基準面とすると、前記第2部分から前記基準面までの最短距離は、前記第1部分から前記基準面までの最短距離より大きい、成膜装置。 - 請求項3に記載の成膜装置において、
前記第1シールド部材は、前記第1部分と前記第2部分との間に段差部を有し、
前記段差部よりも外側の部分の厚さは、前記第1部分の厚さと等しく、
前記段差部よりも内側の部分の厚さは、前記第2部分の厚さと等しい、成膜装置。 - 請求項4に記載の成膜装置において、
前記段差部は、前記第1方向において前記ターゲット部材と重なる、成膜装置。 - 請求項3に記載の成膜装置において、
前記第2部分の前記ターゲット側の面は、前記第1方向に直交する第2方向に対して傾斜する傾斜面になっている、成膜装置。 - 請求項1に記載の成膜装置において、
前記第1シールド部材の内径は、前記ターゲット部材の内径に対して90%以上である。 - 請求項1に記載の成膜装置において、
前記第1シールド部材の内径は、前記ターゲット部材の内径に対して99%以下である。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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GB2301812.0A GB2613711A (en) | 2020-09-25 | 2021-07-06 | Target and film forming device |
DE112021003752.8T DE112021003752T5 (de) | 2020-09-25 | 2021-07-06 | Target und filmbildungsvorrichtung |
CN202180065387.7A CN116194614A (zh) | 2020-09-25 | 2021-07-06 | 靶及成膜装置 |
KR1020237008737A KR20230050435A (ko) | 2020-09-25 | 2021-07-06 | 타깃 및 성막 장치 |
US18/044,887 US20230369034A1 (en) | 2020-09-25 | 2021-07-06 | Target and film forming apparatus |
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JP2020160577A JP7488166B2 (ja) | 2020-09-25 | 2020-09-25 | ターゲットおよび成膜装置 |
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JP (1) | JP7488166B2 (ja) |
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Citations (4)
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JPH07221021A (ja) * | 1994-06-01 | 1995-08-18 | Nippon Telegr & Teleph Corp <Ntt> | プラズマ付着方法 |
JP2005171328A (ja) * | 2003-12-11 | 2005-06-30 | Ntt Afty Corp | プラズマ成膜装置及び該装置を用いた膜形成方法 |
JP2018111886A (ja) * | 2018-04-10 | 2018-07-19 | 京浜ラムテック株式会社 | デバイスの製造方法およびフィルムの製造方法 |
JP2020122178A (ja) * | 2019-01-30 | 2020-08-13 | Jswアフティ株式会社 | ターゲットおよび成膜装置並びに成膜対象物の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947728A (ja) | 1982-09-10 | 1984-03-17 | Nippon Telegr & Teleph Corp <Ntt> | プラズマ付着方法および装置 |
KR102243169B1 (ko) | 2013-01-23 | 2021-04-22 | 알데이라 테라퓨틱스, 아이엔씨. | 독성 알데히드 관련된 질병 및 치료 |
-
2020
- 2020-09-25 JP JP2020160577A patent/JP7488166B2/ja active Active
-
2021
- 2021-06-29 TW TW110123873A patent/TW202214889A/zh unknown
- 2021-07-06 WO PCT/JP2021/025512 patent/WO2022064810A1/ja active Application Filing
- 2021-07-06 GB GB2301812.0A patent/GB2613711A/en active Pending
- 2021-07-06 CN CN202180065387.7A patent/CN116194614A/zh active Pending
- 2021-07-06 KR KR1020237008737A patent/KR20230050435A/ko unknown
- 2021-07-06 US US18/044,887 patent/US20230369034A1/en active Pending
- 2021-07-06 DE DE112021003752.8T patent/DE112021003752T5/de active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07221021A (ja) * | 1994-06-01 | 1995-08-18 | Nippon Telegr & Teleph Corp <Ntt> | プラズマ付着方法 |
JP2005171328A (ja) * | 2003-12-11 | 2005-06-30 | Ntt Afty Corp | プラズマ成膜装置及び該装置を用いた膜形成方法 |
JP2018111886A (ja) * | 2018-04-10 | 2018-07-19 | 京浜ラムテック株式会社 | デバイスの製造方法およびフィルムの製造方法 |
JP2020122178A (ja) * | 2019-01-30 | 2020-08-13 | Jswアフティ株式会社 | ターゲットおよび成膜装置並びに成膜対象物の製造方法 |
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JP2022053772A (ja) | 2022-04-06 |
GB2613711A (en) | 2023-06-14 |
TW202214889A (zh) | 2022-04-16 |
KR20230050435A (ko) | 2023-04-14 |
US20230369034A1 (en) | 2023-11-16 |
GB202301812D0 (en) | 2023-03-29 |
JP7488166B2 (ja) | 2024-05-21 |
CN116194614A (zh) | 2023-05-30 |
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