SG11201604727UA - Sputtering target of sintered sb-te-based alloy - Google Patents
Sputtering target of sintered sb-te-based alloyInfo
- Publication number
- SG11201604727UA SG11201604727UA SG11201604727UA SG11201604727UA SG11201604727UA SG 11201604727U A SG11201604727U A SG 11201604727UA SG 11201604727U A SG11201604727U A SG 11201604727UA SG 11201604727U A SG11201604727U A SG 11201604727UA SG 11201604727U A SG11201604727U A SG 11201604727UA
- Authority
- SG
- Singapore
- Prior art keywords
- sintered
- based alloy
- sputtering target
- sputtering
- alloy
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
- B22F2009/044—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling by jet milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
- B22F2009/0848—Melting process before atomisation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014061966 | 2014-03-25 | ||
| JP2014061965 | 2014-03-25 | ||
| PCT/JP2015/054712 WO2015146394A1 (en) | 2014-03-25 | 2015-02-20 | Sputtering target of sintered sb-te-based alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201604727UA true SG11201604727UA (en) | 2016-07-28 |
Family
ID=54194929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201604727UA SG11201604727UA (en) | 2014-03-25 | 2015-02-20 | Sputtering target of sintered sb-te-based alloy |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10854435B2 (en) |
| EP (1) | EP3048184B1 (en) |
| JP (1) | JP6037421B2 (en) |
| KR (2) | KR20160078478A (en) |
| CN (1) | CN105917021B (en) |
| SG (1) | SG11201604727UA (en) |
| TW (1) | TWI626316B (en) |
| WO (1) | WO2015146394A1 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2673870C1 (en) * | 2018-03-06 | 2018-11-30 | Федеральное государственное учреждение "Федеральный научно-исследовательский центр "Кристаллография и фотоника" Российской академии наук" | Magnetoresistive alloy based on bismuth |
| TWI727322B (en) * | 2018-08-09 | 2021-05-11 | 日商Ｊｘ金屬股份有限公司 | Sputtering target and magnetic film |
| CN109226768A (en) * | 2018-10-09 | 2019-01-18 | 北京航空航天大学 | A kind of preparation method of transient metal doped antimony telluride alloy target material |
| WO2020105676A1 (en) * | 2018-11-20 | 2020-05-28 | 三菱マテリアル株式会社 | Sputtering target |
| JP6801768B2 (en) * | 2018-11-20 | 2020-12-16 | 三菱マテリアル株式会社 | Sputtering target |
| JP2020132996A (en) * | 2019-02-20 | 2020-08-31 | 三菱マテリアル株式会社 | Sputtering target |
| US20220136097A1 (en) * | 2019-02-20 | 2022-05-05 | Mitsubishi Materials Corporation | Sputtering target |
| JP2020158846A (en) | 2019-03-27 | 2020-10-01 | 三菱マテリアル株式会社 | Sputtering target |
| CN110396665A (en) * | 2019-06-18 | 2019-11-01 | 有研新材料股份有限公司 | A kind of sulphur system multicomponent alloy target and its manufacturing method |
| EP3789235A1 (en) | 2019-09-06 | 2021-03-10 | ODU GmbH & Co KG. | Plug-in connector with a locking mechanism |
| TWI836206B (en) * | 2020-04-06 | 2024-03-21 | 日商Ｊｘ金屬股份有限公司 | Target, manufacturing method thereof, and sintered body |
| CN112719278A (en) * | 2020-12-29 | 2021-04-30 | 先导薄膜材料（广东）有限公司 | Preparation method of germanium-antimony-tellurium alloy powder |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0570937A (en) | 1991-04-08 | 1993-03-23 | Mitsubishi Materials Corp | Sputtering target for optical disk and production thereof |
| JP2001098366A (en) * | 1999-07-26 | 2001-04-10 | Sanyo Special Steel Co Ltd | METHOD OF PRODUCING Ge-Sb-Te SPUTTERING TARGET MATERIAL |
| JP4172015B2 (en) | 2003-04-25 | 2008-10-29 | 三菱マテリアル株式会社 | Sputtering target for phase change memory film formation with excellent spatter crack resistance |
| JP4582457B2 (en) | 2003-07-15 | 2010-11-17 | Ｊｘ日鉱日石金属株式会社 | Sputtering target and optical recording medium |
| JP2005117031A (en) | 2003-09-17 | 2005-04-28 | Mitsubishi Materials Corp | Phase-change film for semiconductor nonvolatile memory, and sputtering target for forming the film |
| EP1826291B1 (en) | 2004-11-30 | 2014-10-29 | JX Nippon Mining & Metals Corporation | Sb-Te BASE ALLOY SINTERED SPATTERING TARGET |
| EP1829985B1 (en) | 2004-12-24 | 2013-10-16 | JX Nippon Mining & Metals Corporation | Sb-Te ALLOY SINTERING PRODUCT TARGET |
| US7947106B2 (en) * | 2005-01-18 | 2011-05-24 | Jx Nippon Mining & Metals Corporation | Sb-Te alloy powder for sintering, sintered compact sputtering target obtained by sintering said powder, and manufacturing method of Sb-Te alloy powder for sintering |
| KR20090051260A (en) * | 2006-10-13 | 2009-05-21 | 닛코 킨조쿠 가부시키가이샤 | Sb-te base alloy sinter sputtering target |
| KR20120068967A (en) * | 2007-09-13 | 2012-06-27 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Method for producing sintered body, sintered body, sputtering target composed of the sintered body, and sputtering target-backing plate assembly |
| KR101475133B1 (en) | 2008-02-26 | 2014-12-22 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Sb-Te ALLOY POWDER FOR SINTERING, PROCESS FOR PRODUCTION OF THE POWDER, AND SINTERED TARGET |
| US20110017590A1 (en) * | 2008-03-17 | 2011-01-27 | Jx Nippon Mining & Metals Corporation | Sintered Compact Target and Method of Producing Sintered Compact |
| KR20190112857A (en) | 2009-05-27 | 2019-10-07 | 제이엑스금속주식회사 | Sintered body target and method for producing sintered body |
| JP5377142B2 (en) | 2009-07-28 | 2013-12-25 | ソニー株式会社 | Target manufacturing method, memory manufacturing method |
| US20120286219A1 (en) | 2010-01-07 | 2012-11-15 | Jx Nippon Mining & Metals Corporation | Sputtering target, semiconducting compound film, solar cell comprising semiconducting compound film, and method of producing semiconducting compound film |
| KR20170020541A (en) | 2010-04-26 | 2017-02-22 | 제이엑스금속주식회사 | Sb-te based alloy sintered compact sputtering target |
-
2015
- 2015-02-20 WO PCT/JP2015/054712 patent/WO2015146394A1/en active Application Filing
- 2015-02-20 JP JP2016510132A patent/JP6037421B2/en active Active
- 2015-02-20 SG SG11201604727UA patent/SG11201604727UA/en unknown
- 2015-02-20 CN CN201580004783.3A patent/CN105917021B/en active Active
- 2015-02-20 KR KR1020167014355A patent/KR20160078478A/en active Search and Examination
- 2015-02-20 KR KR1020187012857A patent/KR20180052775A/en not_active Application Discontinuation
- 2015-02-20 US US15/102,305 patent/US10854435B2/en active Active
- 2015-02-20 EP EP15769919.0A patent/EP3048184B1/en active Active
- 2015-03-04 TW TW104106804A patent/TWI626316B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6037421B2 (en) | 2016-12-07 |
| EP3048184A4 (en) | 2017-07-05 |
| EP3048184B1 (en) | 2020-03-25 |
| KR20160078478A (en) | 2016-07-04 |
| EP3048184A1 (en) | 2016-07-27 |
| KR20180052775A (en) | 2018-05-18 |
| TWI626316B (en) | 2018-06-11 |
| CN105917021A (en) | 2016-08-31 |
| TW201546293A (en) | 2015-12-16 |
| US20160314945A1 (en) | 2016-10-27 |
| JPWO2015146394A1 (en) | 2017-04-13 |
| CN105917021B (en) | 2018-04-17 |
| WO2015146394A1 (en) | 2015-10-01 |
| US10854435B2 (en) | 2020-12-01 |
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