JP2005117031A - Phase-change film for semiconductor nonvolatile memory, and sputtering target for forming the film - Google Patents
Phase-change film for semiconductor nonvolatile memory, and sputtering target for forming the film Download PDFInfo
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Abstract
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この発明は、半導体不揮発メモリー用相変化膜およびその相変化膜を形成するためのスパッタリングターゲットに関するものである。 The present invention relates to a phase change film for a semiconductor nonvolatile memory and a sputtering target for forming the phase change film.
半導体不揮発メモリー（Ｐｈａｓｅ Ｃｈａｎｇｅ ＲＡＭ（ＰＣＲＡＭ））の相変化膜は、記録層として用いられており、記録層には結晶状態の相変化材料を用い、書き換えは、その一部をヒーターで急加熱して溶融し、即急冷して部分的に非晶質化させるか、或いは非晶質部を結晶化温度以上、融点以下の温度で加熱保持して結晶状態に戻すことで行っている。一方、読み出しは結晶状態と一部非晶質化した状態の電気抵抗差を検出することによって行なっている。この相変化膜の一つとして、Ｇｅ：１０〜２５％、Ｓｂ：１０〜２５％を含有し、残部がＴｅおよび不可避不純物からなる組成を有する相変化膜が知られており、そしてこの相変化記録層はこの相変化記録層とほぼ同じ成分組成を有するターゲットを用いてスパッタリングすることにより形成することも知られている（例えば、特許文献１〜３、非特許文献１〜２参照）。
非特許文献１に示されるように、書き込み消去時、特に結晶状態を非晶質状態に変化（リセット動作）させるためには一度結晶を融点以上に上げて溶融する必要があるが、この時に６００℃以上の高い融点を持つＧｅ−Ｓｂ−Ｔｅ系材料では溶融する為に回路に流す電流値を大きくしなければならず、そのために消費電力が大きくなり、大電流を流すために周辺回路への負担が大きくなり、また回路の微細化の障害にもなっていた。 As shown in Non-Patent Document 1, in order to change the crystal state to an amorphous state (reset operation) at the time of writing and erasing, it is necessary to raise the crystal once to a melting point or more, but at this time 600 In a Ge—Sb—Te-based material having a high melting point of not lower than ° C., the current value flowing through the circuit has to be increased in order to melt, which increases the power consumption and causes a large current to flow to the peripheral circuit. This increased the burden and hindered circuit miniaturization.
そこで、本発明者らは、かかる課題を解決すべく研究を行なった結果、
（イ）通常のＧｅ：１０〜２５％、Ｓｂ：１０〜２５％を含有し、残部がＴｅおよび不可避不純物からなる組成を有する相変化材料にＳｎ、ＢｉおよびＰｂの内の１種または２種以上を合計で２〜７％含有させると融点を下げることができ、溶融のために必要な電流量を少なくすることができるので、消費電力を少なくすることができる、
（ロ）しかし、Ｓｎ、ＢｉおよびＰｂの内の１種または２種以上を合計で２〜７％含有させると融点は下がるものの、同時に結晶状態での電気抵抗も大きく低下することから、電流が流れすぎるようになる欠点があり、融点を低下させつつ電気抵抗の低下を防ぐためにはさらにＢ、Ａｌ、Ｃ、Ｓｉおよびランタノイド元素の内の１種又は２種以上を合計で２〜１０％含有せしめる必要がある、
（ハ）前記ランタノイド元素の内でもＤｙ，Ｔｂ，Ｎｄ，Ｓｍ，Ｇｄが特に有効である、などの研究結果が得られたのである。
Therefore, the present inventors conducted research to solve such problems,
(B) One or two of Sn, Bi, and Pb as a phase change material having a composition containing normal Ge: 10 to 25%, Sb: 10 to 25%, and the balance being Te and inevitable impurities When the total content is 2 to 7%, the melting point can be lowered, and the amount of current necessary for melting can be reduced, so that the power consumption can be reduced.
(B) However, if one or more of Sn, Bi and Pb are contained in a total of 2 to 7%, the melting point is lowered, but at the same time, the electrical resistance in the crystalline state is greatly reduced. In order to prevent the electric resistance from decreasing while lowering the melting point, it contains 2 to 10% in total of one or more of B, Al, C, Si and lanthanoid elements. It is necessary to
(C) Among the lanthanoid elements, research results such as Dy, Tb, Nd, Sm, and Gd are particularly effective were obtained.
この発明は、かかる研究結果に基づいて成されたものであって、
（１）原子％でＧｅ：１０〜２５％、Ｓｂ：１０〜２５％を含有し、さらにＳｎ、ＢｉおよびＰｂの内の１種または２種以上を合計で２〜７％を含有し、さらにＢ、Ａｌ、Ｃ、Ｓｉおよびランタノイド元素の内の１種または２種以上を合計で２〜１０％を含有し、残部がＴｅおよび不可避不純物からなる組成を有する半導体不揮発メモリー用相変化膜、
（２）前記ランタノイド元素は、Ｄｙ，Ｔｂ，Ｎｄ，Ｓｍ，Ｇｄの内の１種または２種以上である前記（１）記載の半導体不揮発メモリー用相変化膜、に特徴を有するものである。
The present invention has been made based on such research results,
(1) It contains Ge: 10 to 25% and Sb: 10 to 25% in atomic%, and further contains 1 to 2 or more of Sn, Bi and Pb in total 2 to 7%, and A phase change film for a semiconductor non-volatile memory, containing a total of 2 to 10% of one or more of B, Al, C, Si and lanthanoid elements, the balance being Te and inevitable impurities;
(2) The lanthanoid element is characterized in the phase change film for semiconductor nonvolatile memory according to (1), wherein the lanthanoid element is one or more of Dy, Tb, Nd, Sm, and Gd.
前記（１）〜（２）記載の半導体不揮発メモリー用相変化膜は、結晶化後に四探針法により測定した比抵抗値が５×１０−３〜５×１０Ω・ｃｍの範囲内にあり、かつ融点が６００℃以下であることが好ましい。したがって、この発明は、
（３）結晶化後に四探針法により測定した比抵抗値が５×１０−３〜５×１０Ω・ｃｍの範囲内にあり、かつ融点が６００℃以下である前記（１）〜（２）の内のいずれかに記載の半導体不揮発メモリー用相変化膜、に特徴を有するものである。
The phase change film for semiconductor nonvolatile memory according to the above (1) to (2) has a specific resistance value measured by a four-probe method after crystallization within a range of 5 × 10 −3 to 5 × 10 Ω · cm, And it is preferable that melting | fusing point is 600 degrees C or less. Therefore, the present invention
(3) The specific resistance value measured by the four-probe method after crystallization is in the range of 5 × 10 −3 to 5 × 10 Ω · cm, and the melting point is 600 ° C. or less (1) to (2) The phase change film for semiconductor nonvolatile memory according to any one of the above.
この発明のスパッタリングターゲットを用いて形成した相変化膜は、抵抗をさほど低下させること無く低い融点が得られることから書き込み消去動作時の電流値を低減し、低消費電力化、デバイスの微細化に寄与し、新しい半導体メモリー産業の発展に大いに貢献し得るものである。 The phase change film formed by using the sputtering target of the present invention can obtain a low melting point without reducing the resistance so much, so that the current value at the time of write / erase operation is reduced, and the power consumption is reduced and the device is miniaturized. It can contribute greatly to the development of the new semiconductor memory industry.
この発明の半導体不揮発メモリー用相変化膜の成分組成を前述のごとく限定した理由を説明する。
（ａ）Ｓｎ、Ｂｉ、Ｐｂ
これら成分は、Ｇｅ：１０〜２５％、Ｓｂ：１０〜２５％を含有し、残部がＴｅおよび不可避不純物からなる組成を有する相変化膜に含有せしめて相変化膜の融点を一層低下させる。しかし、Ｓｎ、ＢｉおよびＰｂの内の１種または２種以上を合計で２％未満含有しても融点を下げる効果が少ないので好ましくなく、一方、Ｓｎ、ＢｉおよびＰｂの内の１種または２種以上を合計で７％を越えて含有させると結晶状態での抵抗値が大きく低下してしまうために低電流化の効果が少なくなり、好ましくない。したがって、相変化膜に含有せしめるＳｎ、ＢｉおよびＰｂの量は、Ｓｎ、ＢｉおよびＰｂの内の１種または２種以上を合計で量を２〜７％（一層好ましくは、３〜６％）に定めた。
The reason why the component composition of the phase change film for semiconductor nonvolatile memory according to the present invention is limited as described above will be described.
(A) Sn, Bi, Pb
These components contain Ge: 10 to 25%, Sb: 10 to 25%, and the remainder is contained in a phase change film having a composition composed of Te and inevitable impurities to further lower the melting point of the phase change film. However, even if one or more of Sn, Bi and Pb is contained in less than 2% in total, it is not preferable because the effect of lowering the melting point is small, while one or two of Sn, Bi and Pb are not preferred. If more than 7% is included in total, the resistance value in the crystalline state is greatly reduced, so the effect of reducing current is reduced, which is not preferable. Therefore, the amount of Sn, Bi and Pb contained in the phase change film is 2 to 7% (more preferably 3 to 6%) in total of one or more of Sn, Bi and Pb. Determined.
（ｂ）Ｂ，Ａｌ，Ｃ，Ｓｉ，ランタノイド元素
これら成分は、Ｓｎ、ＢｉおよびＰｂの内の１種または２種以上を添加することにより相変化膜の結晶状態での抵抗値の低下を相殺する作用を有するが、その含有量が２％未満では低抵抗化を相殺する効果が少ないので好ましくなく、一方、１０％を越えて含有すると相変化膜の結晶化温度の上昇が大きくなりすぎるので好ましくない。適度な結晶化温度の上昇は非晶質状態の安定性を高め、保持特性の向上につながるが、必要以上に高くなると結晶化するために必要な電力が増加し、低電力化の観点から好ましくないのである。したがって、これら成分の含有量は２〜１０％に定めた。これらの含有量の一層好ましい範囲は３〜８％である。なお、ランタノイド元素の内でもＤｙ，Ｔｂ，Ｎｄ，Ｓｍ，Ｇｄが特に好ましい。
(B) B, Al, C, Si, lanthanoid elements These components offset the decrease in resistance value in the crystalline state of the phase change film by adding one or more of Sn, Bi and Pb. However, if the content is less than 2%, the effect of offsetting the low resistance is small, which is not preferable. On the other hand, if the content exceeds 10%, the increase in the crystallization temperature of the phase change film becomes too large. It is not preferable. A moderate increase in the crystallization temperature increases the stability of the amorphous state and leads to an improvement in retention characteristics, but if it becomes higher than necessary, the power required for crystallization increases, which is preferable from the viewpoint of lowering the power. There is no. Therefore, the content of these components is set to 2 to 10%. A more preferable range of these contents is 3 to 8%. Of the lanthanoid elements, Dy, Tb, Nd, Sm, and Gd are particularly preferable.
（ｃ） Ｇｅ、Ｓｂ：
この発明の電気抵抗が高い相変化膜に含まれるＧｅおよびＳｂは、Ｇｅ：１０〜２５％、Ｓｂ：１０〜２５％が好ましい。その理由は、Ｇｅ：１０％未満、Ｓｂ：１０％未満であっても、またＧｅ：２５％を越え、Ｓｂ：２５％を越えても抵抗値が低くなったり結晶化時間が長くなって好ましくないことによるものである。
(C) Ge, Sb:
Ge and Sb contained in the phase change film having a high electric resistance according to the present invention are preferably Ge: 10 to 25% and Sb: 10 to 25%. The reason is that even if Ge: less than 10%, Sb: less than 10%, Ge: more than 25%, and Sb: more than 25%, the resistance value is lowered or the crystallization time is preferably increased. This is due to the absence.
この発明の相変化膜は、結晶化後に四探針法により測定した比抵抗値が５×１０−３Ω・ｃｍ以上（一層好ましくは１×１０-2Ω・ｃｍ以上）であることが必要であり、その理由は比抵抗値が５×１０−３Ω・ｃｍ未満では相変化膜の一部を非晶質化する際、回路に大きな電流が流れ、そのために消費電力が大きくなり、また微細化時の障害になるので好ましくないことによるものである。また、非晶質状態のＧｅ−Ｓｂ−Ｆｅ合金の比抵抗は通常１×１０３Ω・ｃｍ程度であり、安定した読み出しのためには結晶時と非晶質時で少なくとも一桁半程度の抵抗差があることが好ましい。このため、結晶時の相変化膜の抵抗値を５×１０Ω・ｃｍ以下とすることが必要である。さらにこの発明の相変化膜の融点は低消費電力の観点から６００℃以下であることが必要である。 The phase change film of the present invention needs to have a specific resistance measured by a four-probe method after crystallization of 5 × 10 −3 Ω · cm or more (more preferably 1 × 10 −2 Ω · cm or more). The reason is that when the specific resistance value is less than 5 × 10 −3 Ω · cm, when a part of the phase change film is amorphized, a large current flows through the circuit, which increases power consumption. This is because it becomes an obstacle at the time of miniaturization. In addition, the specific resistance of the Ge—Sb—Fe alloy in an amorphous state is usually about 1 × 10 3 Ω · cm. It is preferable that there is a resistance difference. For this reason, the resistance value of the phase change film during crystallization needs to be 5 × 10 Ω · cm or less. Furthermore, the melting point of the phase change film of the present invention is required to be 600 ° C. or less from the viewpoint of low power consumption.
この発明の前記成分組成を有する半導体不揮発メモリー用相変化膜を形成するためのスパッタリングターゲットは、原子％でＧｅ：１０〜２６％、Ｓｂ：１０〜２６％を含有し、さらにＳｎ、ＢｉおよびＰｂの内の１種または２種以上を合計で２〜８％を含有し、さらにＢ、Ａｌ、Ｃ、Ｓｉおよびランタノイド元素の内の１種または２種以上を合計で２〜１１％を含有し、残部がＴｅおよび不可避不純物からなる成分組成を有することが必要である。 A sputtering target for forming a phase change film for a semiconductor nonvolatile memory having the above component composition according to the present invention contains Ge: 10 to 26%, Sb: 10 to 26% in atomic%, and Sn, Bi and Pb. 2 or 8% in total of one or more of these, and further 2 to 11% in total of one or more of B, Al, C, Si and lanthanoid elements It is necessary that the balance has a component composition consisting of Te and inevitable impurities.
したがって、この発明は、
（４）原子％でＧｅ：１０〜２６％、Ｓｂ：１０〜２６％を含有し、さらにＳｎ、ＢｉおよびＰｂの内の１種または２種以上を合計で２〜８％を含有し、さらにＢ、Ａｌ、Ｃ、Ｓｉおよびランタノイド元素の内の１種または２種以上を合計で２〜１１％を含有し、残部がＴｅおよび不可避不純物からなる組成を有する前記（１）記載の半導体不揮発メモリー用相変化膜を形成するためのスパッタリングターゲット。
（５）前記ランタノイド元素は、Ｄｙ，Ｔｂ，Ｎｄ，Ｓｍ，Ｇｄの内の１種または２種以上である前記（４）記載の半導体不揮発メモリー用相変化膜を形成するためのスパッタリングターゲット、に特徴を有するものである。
Therefore, the present invention
(4) It contains Ge: 10 to 26% and Sb: 10 to 26% in atomic%, and further contains one or more of Sn, Bi, and Pb in a total of 2 to 8%, and The semiconductor nonvolatile memory according to the above (1), which contains 2 to 11% in total of one or more of B, Al, C, Si and lanthanoid elements, and the balance is made of Te and inevitable impurities. Sputtering target for forming a phase change film for use.
(5) The sputtering target for forming the phase change film for semiconductor nonvolatile memory according to (4), wherein the lanthanoid element is one or more of Dy, Tb, Nd, Sm, and Gd. It has characteristics.
この発明の前記（１）記載の成分組成を有する半導体不揮発メモリー用相変化膜を形成するためのスパッタリングターゲットは、所定の成分組成を有するＧｅ−Ｓｂ−Ｔｅ系合金をＡｒガス雰囲気中で溶解した後、Ｓｎ、ＢｉおよびＰｂの内の１種または２種以上を添加し、鉄製モールドに出湯して合金インゴットを作製し、これら合金インゴットを不活性ガス雰囲気中で粉砕して２００μｍ以下の合金粉末を作製し、この合金粉末を真空ホットプレスすることにより作製する。前記真空ホットプレスは、圧力：１５〜１５５ＭＰａ、温度：３７０〜５８０℃、１〜２時間保持の条件で行なわれ、その後、モールドの温度が２７０〜３００℃まで下がった時点で冷却速度：１〜３℃／分で常温まで冷却することにより行われる。
さらに、この発明の前記（２）記載の成分組成を有する半導体不揮発メモリー用相変化膜を形成するためのスパッタリングターゲットは、Ｇｅ−Ｓｂ−Ｔｅ系合金にＳｎ、ＢｉおよびＰｂを添加し、この合金粉末と、別途作製した２００μｍ以下のＢ，Ａｌ，Ｃ，Ｓｉ，ランタノイド元素（好ましくは、Ｄｙ，Ｔｂ，Ｎｄ，Ｓｍ，Ｇｄ）の各粉末をこの発明の成分組成となるように混合して混合粉末を作製し、この混合粉末を真空ホットプレスすることにより作製する。前記真空ホットプレスは、圧力：１４６〜１５５ＭＰａ、温度：３７０〜４３０℃、１〜２時間保持の条件で行なわれ、その後、モールドの温度が２７０〜３００℃まで下がった時点で冷却速度：１〜３℃／分で常温まで冷却することにより行われる。
A sputtering target for forming a phase change film for a semiconductor nonvolatile memory having the component composition described in (1) of the present invention is obtained by dissolving a Ge—Sb—Te alloy having a predetermined component composition in an Ar gas atmosphere. Thereafter, one or more of Sn, Bi, and Pb are added, and an alloy ingot is produced by pouring out into an iron mold, and the alloy ingot is pulverized in an inert gas atmosphere to have an alloy powder of 200 μm or less. The alloy powder is produced by vacuum hot pressing. The vacuum hot press is performed under the conditions of a pressure of 15 to 155 MPa, a temperature of 370 to 580 ° C. and a holding time of 1 to 2 hours, and then a cooling rate of 1 to 3 when the temperature of the mold is lowered to 270 to 300 ° C. It is performed by cooling to room temperature at 3 ° C./min.
Furthermore, a sputtering target for forming a phase change film for a semiconductor nonvolatile memory having the component composition described in (2) of the present invention is obtained by adding Sn, Bi and Pb to a Ge—Sb—Te alloy, Powder and separately prepared powders of B, Al, C, Si, lanthanoid elements (preferably Dy, Tb, Nd, Sm, Gd) of 200 μm or less are mixed and mixed so as to have the component composition of the present invention. A powder is produced, and this mixed powder is produced by vacuum hot pressing. The vacuum hot press is performed under the conditions of pressure: 146 to 155 MPa, temperature: 370 to 430 ° C., holding for 1 to 2 hours, and then cooling rate: 1 to 1 when the temperature of the mold is lowered to 270 to 300 ° C. It is performed by cooling to room temperature at 3 ° C./min.
Ｇｅ、Ｓｂ、ＴｅをＡｒガス雰囲気中で溶解し、得られた溶湯にＳｎ、ＢｉおよびＰｂの内の１種または２種以上を添加し、このＳｎ、ＢｉおよびＰｂの内の１種または２種以上を添加して得られた溶湯を鋳造して合金インゴットを作製し、この合金インゴットをＡｒ雰囲気中で粉砕することにより、いずれも粒径：１００μｍ以下の合金粉末を作製した。この合金粉末と、粒径：１００μｍ以下のＢ，Ａｌ，Ｃ，Ｓｉ，Ｄｙ，Ｔｂ，Ｎｄ，Ｓｍ，Ｇｄの各要素粉末を混合して混合粉末を作製した。
このようにして得られた混合粉末をそれぞれ温度：４００℃、圧力：１４６ＭＰａで真空ホットプレスすることによりホットプレス体を作製し、これらホットプレス体を超硬バイトを使用し、旋盤回転数：２００ｒｐｍの条件で研削加工することにより直径：１２５ｍｍ、厚さ：５ｍｍの寸法を有する円盤状の表１〜３に示される成分組成を有する本発明ターゲット１〜２３、比較ターゲット１〜１０および従来ターゲット１を作製した。
Ge, Sb, Te are melted in an Ar gas atmosphere, and one or more of Sn, Bi, and Pb are added to the resulting molten metal, and one or two of Sn, Bi, and Pb are added. An alloy ingot was produced by casting a molten metal obtained by adding seeds or more, and the alloy ingot was pulverized in an Ar atmosphere, thereby producing alloy powders each having a particle size of 100 μm or less. This alloy powder was mixed with each element powder of B, Al, C, Si, Dy, Tb, Nd, Sm, and Gd having a particle size of 100 μm or less to prepare a mixed powder.
The mixed powders thus obtained were each hot-pressed by vacuum hot pressing at a temperature of 400 ° C. and a pressure of 146 MPa, and these hot-pressed bodies were manufactured using a carbide tool, with a lathe rotation speed of 200 rpm. The present invention targets 1 to 23, comparative targets 1 to 10 and conventional targets 1 having the component compositions shown in Tables 1 to 3 having a disk shape having a diameter of 125 mm and a thickness of 5 mm by grinding under the conditions of Was made.
次に、表１〜３に示される本発明ターゲット１〜２３、比較ターゲット１〜１０および従来ターゲット１をそれぞれ銅製の冷却用バッキングプレートに純度：９９．９９９重量％のインジウムろう材にてハンダ付けし、これを直流マグネトロンスパッタリング装置に装入し、ターゲットと基板（表面に厚さ：１００ｎｍのＳｉＯ２を形成したＳｉウエーハ）の間の距離を７０ｍｍになるようにセットした後、到達真空度：５×１０-5Ｐａ以下になるまで真空引きを行い、その後、全圧：１．０ＰａになるまでＡｒガスを供給し、
・基板温度：室温、
・投入電力：５０Ｗ（０．４Ｗ／ｃｍ２）、
の条件でスパッタリングを行い、基板の表面に厚さ：３００ｎｍを有し表４〜６に示される成分組成を有する本発明相変化膜１〜２３、比較相変化膜１〜１０および従来相変化膜１を形成した。
Next, the present invention targets 1 to 23, comparative targets 1 to 10 and the conventional target 1 shown in Tables 1 to 3 are each soldered to a copper cooling backing plate with an indium brazing material having a purity of 99.999% by weight. Then, this was inserted into a DC magnetron sputtering apparatus, and after setting the distance between the target and the substrate (Si wafer having a thickness of 100 nm of SiO 2 on the surface) to be 70 mm, the ultimate vacuum: Evacuate until 5 × 10 −5 Pa or less, and then supply Ar gas until the total pressure is 1.0 Pa,
-Substrate temperature: room temperature,
-Input power: 50 W (0.4 W / cm 2 ),
The present invention phase change films 1 to 23, comparative phase change films 1 to 10 and conventional phase change films having a thickness of 300 nm on the surface of the substrate and the component compositions shown in Tables 4 to 6 are used. 1 was formed.
このようにして得られた本発明相変化膜１〜２３、比較相変化膜１〜１０および従来相変化膜１の成分組成をＩＣＰ（誘導結合プラズマ法）により測定し、その結果を表４〜６示した。さらに、得られた本発明相変化膜１〜２３、比較相変化膜１〜１０および従来相変化膜１を窒素フロー中、２８０℃に５分間保持して結晶化した後、四探針法で比抵抗を測定し、その結果を表４〜６示した。また上記と同じ条件で直径：１２０ｍｍのポリカーボネート基板上に３μｍの厚さで成膜し、付いた膜を全量剥離して粉末化したものについてＤＴＡ（示差熱分析法）により毎分２００ｍｌのＡｒフロー中、昇温速度１０℃／分の条件で結晶化温度および融点を測定し、その結果を表４〜６に示した。なお、本測定に用いた試料は１５ｍｇで統一した。ここでは１６０〜３４０℃付近に現れる発熱ピークを結晶化温度とし、５４０〜６２０℃付近に現れる発熱ピークを融点とした。 The component compositions of the present invention phase change films 1 to 23, comparative phase change films 1 to 10 and the conventional phase change film 1 thus obtained were measured by ICP (inductively coupled plasma method), and the results are shown in Tables 4 to 4 below. 6 shown. Furthermore, after crystallizing the obtained phase change films 1 to 23, comparative phase change films 1 to 10 and the conventional phase change film 1 of the present invention at 280 ° C for 5 minutes in a nitrogen flow, The specific resistance was measured, and the results are shown in Tables 4-6. In addition, a film having a thickness of 3 μm was formed on a polycarbonate substrate having a diameter of 120 mm under the same conditions as described above, and the attached film was completely peeled and pulverized to 200 ml of Ar flow per minute by DTA (differential thermal analysis). Medium, the crystallization temperature and the melting point were measured under the condition of a heating rate of 10 ° C./min, and the results are shown in Tables 4-6. The sample used for this measurement was unified at 15 mg. Here, the exothermic peak that appears in the vicinity of 160 to 340 ° C. was defined as the crystallization temperature, and the exothermic peak that appeared in the vicinity of 540 to 620 ° C. was defined as the melting point.
表４〜６示される結果から、本発明ターゲット１〜２３を用いてスパッタリングすることにより得られた結晶化させた本発明相変化膜１〜２３は、従来ターゲット１を用いてスパッタリングすることにより得られた従来相変化膜１に比べて融点が低く、比抵抗の低下が少ないなど優れた相変化膜であることが分かる。しかし、この発明の範囲から外れて添加成分を含む比較相変化膜１〜１０は少なくとも一つの好ましくない特性が現れることが分かる。 From the results shown in Tables 4 to 6, crystallized present invention phase change films 1 to 23 obtained by sputtering using the present invention targets 1 to 23 are obtained by sputtering using the conventional target 1. It can be seen that the phase change film is excellent in that the melting point is lower than that of the conventional phase change film 1 and the specific resistance is less decreased. However, it can be seen that the comparative phase change films 1 to 10 including the additive component are out of the scope of the present invention and at least one undesirable characteristic appears.
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