JP4687949B2 - Method for producing target for forming phase change recording film with short pre-sputtering time - Google Patents
Method for producing target for forming phase change recording film with short pre-sputtering time Download PDFInfo
- Publication number
- JP4687949B2 JP4687949B2 JP2004325844A JP2004325844A JP4687949B2 JP 4687949 B2 JP4687949 B2 JP 4687949B2 JP 2004325844 A JP2004325844 A JP 2004325844A JP 2004325844 A JP2004325844 A JP 2004325844A JP 4687949 B2 JP4687949 B2 JP 4687949B2
- Authority
- JP
- Japan
- Prior art keywords
- phase change
- target
- change recording
- recording film
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000843 powder Substances 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 22
- 239000002994 raw material Substances 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 17
- 239000000956 alloy Substances 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000002131 composite material Substances 0.000 description 6
- 150000001875 compounds Chemical group 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910005936 Ge—Sb Inorganic materials 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Description
この発明は、半導体不揮発メモリーの一種である相変化メモリー（Ｐｈａｓｅ Ｃｈａｎｇｅ ＲＡＭ）に用いられる相変化記録膜を形成するためのプレスパッタ時間の短いターゲットの製造方法に関するものである。 The present invention relates to a method for manufacturing a target with a short pre-sputter time for forming a phase change recording film used in a phase change memory (Phase Change RAM) which is a kind of semiconductor nonvolatile memory.
一般に、半導体不揮発メモリーの一種である相変化メモリー（Ｐｈａｓｅ Ｃｈａｎｇｅ ＲＡＭ）に用いられる相変化記録膜には結晶状態の相変化材料を用い、書き換えは、その一部をヒーターで急加熱して溶融し、即急冷して部分的に非晶質化させるか、或いは非晶質部を融点以下の温度で加熱保持して結晶状態に戻すことで行っている。そして読み出しは結晶状態と一部非晶質化した状態の電気抵抗差によって行なっている。この相変化記録膜は、相変化記録となる成分組成の合金からなるターゲットを用いてスパッタリングすることにより形成することも知られている。このターゲットの組成として、一般に、光ビーム照射による非晶質相と結晶相との可逆的な相変化を利用して情報の記録、再生および消去を行う記録媒体において用いられる記録膜は、Ｇａ−Ｓｂ二元共晶系相変化型記録膜が用いられており、その中でもＧａ１２Ｓｂ８８共晶組成を有するＧａ−Ｓｂ二元系相変化型記録膜は、結晶化速度が大きく高速記録に好適であるところから広く知られている（例えば、非特許文献１参照）。 In general, a phase change recording film used in a phase change memory (Phase Change RAM), which is a kind of semiconductor non-volatile memory, uses a phase change material in a crystalline state, and rewriting is rapidly heated by a heater and melted. It is performed by immediately cooling to make it partially amorphous or by heating and holding the amorphous part at a temperature below the melting point to return to the crystalline state. Reading is performed by the difference in electrical resistance between the crystalline state and the partially amorphous state. It is also known that this phase change recording film is formed by sputtering using a target made of an alloy having a component composition for phase change recording. As a composition of this target, in general, a recording film used in a recording medium for recording, reproducing, and erasing information using a reversible phase change between an amorphous phase and a crystalline phase by irradiation with a light beam is Ga- Sb binary eutectic phase change recording films are used, and Ga-Sb binary phase change recording films having a Ga 12 Sb 88 eutectic composition have a high crystallization speed and are suitable for high-speed recording. Therefore, it is widely known (for example, see Non-Patent Document 1).
さらに、Ｇａ：１〜１０％、Ｔｅ：５〜３９％を含有し、残部がＳｂおよび不可避不純物からなる組成を有するＧａ−Ｔｅ−Ｓｂ系ターゲットが知られており、その他、Ｇｅ−Ｔｅ−Ｓｂ系ターゲットが知られている（特許文献１参照） Furthermore, a Ga—Te—Sb-based target having a composition containing Ga: 1 to 10%, Te: 5 to 39%, and the balance consisting of Sb and inevitable impurities is known. In addition, Ge—Te—Sb System targets are known (see Patent Document 1)
そして、これらターゲットを作製するには、温度：６００〜８００℃、不活性ガス雰囲気中で溶解して相変化記録膜とほぼ同じ成分組成を有する溶湯を作製し、得られた溶湯を鉄製鋳型もしくは石英鋳型中に鋳造して所定の成分組成を有する合金インゴットを作製し、この合金インゴットを粉砕して原料粉末を作製し、この原料粉末を温度：４００〜６００℃で加圧焼結することにより作製する。
このようにして得られたターゲットはスパッタリング装置にセットされ、スパッタリングを行うことにより相変化記録膜を形成する。
The target thus obtained is set in a sputtering apparatus, and a phase change recording film is formed by sputtering.
前記従来の粉砕して得られた原料粉末を用いて作製した相変化記録膜形成用ターゲットは、原料粉末が複合化合物組織となっているために、その原料粉末で作製したそのターゲットも複合化合物組織になっている。例えば、Ｇｅ−Ｓｂ系相変化記録膜形成用ターゲットは、Ｇｅリッチ相とＳｂリッチ相が共存する複合化合物組織となっており、さらにＧａ−Ｓｂ系相変化記録膜形成用ターゲットは、Ｇａリッチ相とＳｂリッチ相が共存する複合化合物組織となっている。かかる複合組織を有するターゲットを用いて相変化記録膜を形成すると、各化合物のスパッタ率の相違により、スパッタ中の膜組成が経時変化し、所望するターゲットと同じ膜組成が得られるようにするには長時間のプレスパッタを行う必要がある。
また、Ｇｅ−Ｉｎ−Ｓｂ系合金からなるターゲットをスパッタリングして相変化記録膜を形成すると純Ｇｅに近いＧｅリッチ相とＩｎＳｂ相との複合化合物相となり、スパッタ率の高いＩｎＳｂ相が優先的にスパッタされる結果、スパッタリング初期に形成された膜組成は、目標とする組成と比べてＧｅ含有量の低い膜となる。そのため、膜組成が安定するためには長時間のプレスパッタを行う必要があり、長時間のプレスパッタを行い、一定の比率の成分組成を有する相変化記録膜が形成されることを確認したのちスパッタリングを行って相変化記録膜を生産している。
しかし、長時間のプレスパッタを行うことは、相変化記録膜の生産コストに大きく影響し、プレスパッタ時間の一層短いターゲットが求められている。
The target for forming a phase change recording film prepared using the conventional raw material powder obtained by pulverization has a composite compound structure because the raw material powder has a composite compound structure. It has become. For example, the Ge-Sb phase change recording film forming target has a composite compound structure in which a Ge rich phase and an Sb rich phase coexist, and the Ga-Sb phase change recording film forming target is a Ga rich phase. And a composite compound structure in which the Sb rich phase coexists. When a phase change recording film is formed using a target having such a composite structure, the film composition during sputtering changes over time due to the difference in the sputtering rate of each compound, and the same film composition as the desired target is obtained. Needs to be pre-sputtered for a long time.
Further, when a phase change recording film is formed by sputtering a target made of a Ge—In—Sb alloy, a composite compound phase of a Ge rich phase and an InSb phase close to pure Ge is formed, and an InSb phase having a high sputtering rate is preferentially used. As a result of sputtering, the film composition formed in the initial stage of sputtering becomes a film having a lower Ge content than the target composition. Therefore, in order to stabilize the film composition, it is necessary to perform pre-sputtering for a long time, and after confirming that a phase-change recording film having a certain component composition is formed by performing long-time pre-sputtering. Sputtering is used to produce phase change recording films.
However, performing pre-sputtering for a long time greatly affects the production cost of the phase change recording film, and a target with a shorter pre-sputtering time is required.
そこで、本発明者らは、プレスパッタ時間の一層短いターゲットを得るべく研究を行なった結果、成分組成は同じでも、ガスアトマイズ粉末を原料粉末としこれを加圧燒結して得られたターゲットは、従来の粉砕粉末を原料粉末としてこれを加圧燒結して得られたターゲットに比べて、格段にプレスパッタ時間が短くなり、またターゲットの密度も高密度となるという研究結果が得られたのである。
この発明は、かかる研究結果に基づいて成されたものであって、
原料粉末を加圧焼結することにより相変化記録膜形成用ターゲットを製造する方法において、原料粉末としてガスアトマイズ粉末を使用するプレスパッタ時間の短い相変化記録膜形成用ターゲットの製造方法、に特徴を有するものである。
Therefore, the present inventors conducted research to obtain a target having a shorter pre-sputtering time, and as a result, the target obtained by using a gas atomized powder as a raw material powder and pressurizing and sintering it was the same as the conventional composition, even though the component composition was the same. Compared to a target obtained by using this pulverized powder as a raw material powder and pressure-sintering it, the research results were obtained that the pre-sputtering time was significantly shortened and the density of the target was also high.
The present invention has been made based on such research results,
In the method for producing a target for forming a phase change recording film by pressure sintering the raw material powder, the method for producing a target for forming a phase change recording film with a short pre-sputter time using a gas atomized powder as the raw material powder is characterized. It is what you have.
前記記載の原料粉末としてのガスアトマイズ粉末は、原子％でＧａ：５〜２０％未満を含有し、さらに必要に応じてＩｎ、Ｔｅ、ＢｉおよびＳｎの内の１種または２種以上を合計で０．２〜２０％を含有し、残部がＳｂおよび不可避不純物からなる組成を有するガスアトマイズ粉末である。したがって、この発明は、
（１）原料粉末としてのガスアトマイズ粉末を加圧焼結することにより相変化記録膜形成用ターゲットを製造する方法において、
前記ガスアトマイズ粉末は、原子％でＧａ：５〜２０％未満を含有し、残部がＳｂおよび不可避不純物からなる組成を有し、前記加圧焼結は、温度：４００〜６００℃、１〜３時間保持の条件で行なわれるプレスパッタ時間の短い相変化記録膜形成用ターゲットの製造方法。
（２）前記ガスアトマイズ粉末は、原子％でＧａ：５〜２０％未満を含有し、さらにＩｎ、Ｔｅ、ＢｉおよびＳｎの内の１種または２種以上を合計で０．２〜２０％を含有し、残部がＳｂおよび不可避不純物からなる組成を有する前記（１）記載のプレスパッタ時間の短い相変化記録膜形成用ターゲットの製造方法、に特徴を有するものである。
The gas atomized powder as the raw material powder described above contains Ga: 5 to less than 20% in atomic%, and further, if necessary, one or more of In, Te, Bi, and Sn are 0 in total. A gas atomized powder containing 2 to 20%, with the balance being composed of Sb and inevitable impurities. Therefore, the present invention
(1) In a method for producing a target for forming a phase change recording film by pressure sintering a gas atomized powder as a raw material powder,
The gas atomized powder, Ga in atomic%: contains less than 5-20%, possess the balance consisting of Sb and inevitable impurities, wherein the pressure sintering, temperature: 400 to 600 ° C., 1 to 3 hours A method for producing a target for forming a phase change recording film having a short pre-sputtering time, which is carried out under holding conditions .
(2) The gas atomized powder contains Ga: 5 to less than 20% in atomic%, and further contains 0.2 to 20% in total of one or more of In, Te, Bi and Sn. In addition, the present invention is characterized in that the method for producing a target for forming a phase change recording film with a short pre-sputtering time described in the above (1) having a composition comprising the balance of Sb and inevitable impurities.
この発明のプレスパッタ時間の短い相変化記録膜形成用ターゲットは、所定の成分組成を有する合金を溶解した後、得られた溶湯をガスアトマイズすることによりガスアトマイズ合金粉末を作製し、このガスアトマイズ合金粉末を真空ホットプレスなどの加圧燒結することにより作製する。前記加圧焼結は、温度：４００〜６００℃、１〜３時間保持の条件で行なわれる。 The target for forming a phase change recording film having a short pre-sputtering time according to the present invention is prepared by dissolving an alloy having a predetermined component composition and then gas atomizing the obtained molten metal to produce a gas atomized alloy powder. It is produced by pressure sintering such as a vacuum hot press. The pressure sintering is performed under the conditions of temperature: 400 to 600 ° C. and holding for 1 to 3 hours.
この発明は、プレスパッタ時間を短くして効率良く相変化記録膜を形成することができるので、相変化型不揮発メモリー膜の形成コストを削減することができ、半導体メモリー産業の発展に大いに貢献し得るものである。 Since the present invention can efficiently form a phase change recording film by shortening the pre-sputtering time, the cost of forming the phase change type nonvolatile memory film can be reduced and greatly contributes to the development of the semiconductor memory industry. To get.
実施例
Ｇａ、Ｓｂ、Ｉｎ、Ｔｅ、ＢｉおよびＳｎをＡｒガス雰囲気中で溶解することにより合金溶湯を作製し、この合金溶湯をＡｒガスを用いてガスアトマイズすることにより、いずれも平均粒径：４μｍを有し、表１に示される成分組成を有するガスアトマイズ合金粉末を作製した。これらガスアトマイズ合金粉末を内径：１３０ｍｍのモールドに充填し、温度：５３０℃、圧力：２４．５ＭＰａ、保持時間：２時間の条件で真空ホットプレスし円板状ホットプレス体を作製することにより本発明相変化記録膜形成用ターゲットの製造方法（以下、本発明法という）１１〜２０を実施した。本発明法１１〜２０で得られたこれら円板状ホットプレス体の相対密度を測定し、その結果をターゲットの密度として表１に示した。
さらにこれら円板状ホットプレス体を超硬バイトを使用し、旋盤回転数：２００ｒｐｍの条件で研削加工することにより直径：１２５ｍｍ、厚さ：５ｍｍの寸法を有する円盤からなるターゲットを作製し、これらターゲットをそれぞれ無酸素銅製の冷却用バッキングプレートにろう付けし、これを直流マグネトロンスパッタリング装置に装入し、基板温度：室温、ターゲットと基板（表面に厚さ：１００ｎｍのＳｉＯ2を形成したＳｉウエーハ）の間の距離を７０ｍｍになるようにセットした後、スパッタガス圧：０．６７ｋＰａになるまでＡｒガスを供給し、いずれも電力：１．５ｋＷを投入し、成膜組成がターゲットの成分組成と同じ目標組成に対して±５％以内入るまでプレスパッタリングし、この範囲に入るまでのスパッタ時間をプレスパッタ時間として測定し、その結果を表１に示した。
Example
Ga, Sb , In, Te, Bi, and Sn are melted in an Ar gas atmosphere to produce a molten alloy, and the molten alloy is gas atomized using Ar gas, so that all have an average particle size of 4 μm. and, to prepare a gas-atomized alloy powder having a component composition is shown in Table 1. These gas atomized alloy powders are filled in a mold having an inner diameter of 130 mm and vacuum hot pressed under conditions of temperature: 530 ° C., pressure: 24.5 MPa, holding time: 2 hours to produce a disk-shaped hot press body. method of manufacturing a phase change recording film target (hereinafter, referred to as the present invention method) 11-20 were performed. The relative densities of these disk-like hot press bodies obtained by the inventive methods 11 to 20 were measured, and the results are shown in Table 1 as target densities.
Further, these disk-like hot press bodies are ground using a carbide tool under the condition of lathe rotation speed: 200 rpm to produce a target consisting of a disk having a diameter of 125 mm and a thickness of 5 mm. Each target was brazed to a cooling plate made of oxygen-free copper and loaded into a DC magnetron sputtering apparatus. The substrate temperature: room temperature, the target and the substrate (Si wafer having a surface of SiO 2 having a thickness of 100 nm formed thereon) ) Is set to be 70 mm, Ar gas is supplied until the sputtering gas pressure is 0.67 kPa, and power is applied to both of them: 1.5 kW. and pre-sputtering to enter within 5% ± the same target composition as the pre-sputter time to fall within this range The sputtering time was measured and the result is shown in Table 1 .
従来例
Ｇａ、Ｓｂ、Ｉｎ、Ｔｅ、ＢｉおよびＳｎをＡｒガス雰囲気中で溶解し鋳造して合金インゴットを作製し、この合金インゴットを液体窒素中に浸漬して急冷したのちＡｒ雰囲気中で粉砕することにより、いずれも平均粒径：２０μｍの実施例と同一成分組成を有する粉砕合金粉末を作製した。
これら粉砕合金粉末を内径：１３０ｍｍのモールドに充填し、温度：５３０℃、圧力：２４．５ＭＰａ、保持時間：２時間の条件で真空ホットプレスして円板状ホットプレス体を作製することにより従来相変化記録膜形成用ターゲットの製造方法（以下、従来法という）１１〜２０を実施した。従来法１１〜２０で得られたこれら円板状ホットプレス体の相対密度を測定し、その結果をターゲットの密度として表１に示した。
さらにこれら円板状ホットプレス体を超硬バイトを使用し、旋盤回転数：２００ｒｐｍの条件で研削加工することにより直径：１２５ｍｍ、厚さ：５ｍｍの寸法を有する円盤からなるターゲットを作製し、これらターゲットをそれぞれ無酸素銅製の冷却用バッキングプレートにろう付けし、これを直流マグネトロンスパッタリング装置に装入し、基板温度：室温、ターゲットと基板（表面に厚さ：１００ｎｍのＳｉＯ2を形成したＳｉウエーハ）の間の距離を７０ｍｍになるようにセットした後、スパッタガス圧：０．６７ｋＰａになるまでＡｒガスを供給し、いずれも電力：１．５ｋＷを投入し、成膜組成がターゲットの成分組成と同じ目標組成に対して±５％以内入るまでプレスパッタリングし、この範囲に入るまでのスパッタ時間をプレスパッタ時間として測定し、その結果を表１に示した。
Conventional example
By melting and casting Ga, Sb, In, Te, Bi and Sn in an Ar gas atmosphere to produce an alloy ingot, immersing the alloy ingot in liquid nitrogen, quenching, and then grinding in an Ar atmosphere In each case, a pulverized alloy powder having the same component composition as that of the example having an average particle diameter of 20 μm was prepared.
Conventionally, these crushed alloy powders are filled into a mold having an inner diameter of 130 mm, and vacuum hot pressing is performed under the conditions of temperature: 530 ° C., pressure: 24.5 MPa, holding time: 2 hours to produce a disk-shaped hot press body. method of manufacturing a phase change recording film-forming target were carried out (hereinafter, the conventional method referred to) 11-20. The relative densities of these disk-like hot press bodies obtained by the conventional methods 11 to 20 were measured, and the results are shown in Table 1 as target densities.
Further, these disk-like hot press bodies are ground using a carbide tool under the condition of lathe rotation speed: 200 rpm to produce a target consisting of a disk having a diameter of 125 mm and a thickness of 5 mm. Each target was brazed to a cooling plate made of oxygen-free copper and loaded into a DC magnetron sputtering apparatus. The substrate temperature: room temperature, the target and the substrate (Si wafer having a surface of SiO 2 having a thickness of 100 nm formed thereon) ) Is set to be 70 mm, Ar gas is supplied until the sputtering gas pressure is 0.67 kPa, and power is applied to both of them: 1.5 kW. Pre-sputtering until it falls within ± 5% of the same target composition, and the sputtering time until entering this range is pre-sputtered. The sputtering time was measured and the result is shown in Table 1 .
表１に示される結果から、本発明法１１により作製したターゲットと従来法１１により作製したターゲットを比べると、同一成分組成を有するにもかかわらず、本発明法１１により作製したターゲットは従来法１１により作製したターゲッに比べて密度が高く、さらにプレスパッタ時間が格段に短いことが分かる。
同様にして、本発明法１２〜２０により作製したターゲットは、従来法１２〜２０により作製したターゲッに比べて密度が高く、さらにプレスパッタ時間が格段に短いことが分かる。
From the results shown in Table 1, when comparing the target prepared by the target and conventional method 11 was prepared according to the process of the present invention 11, despite having identical chemical composition, the present invention method 11 prior art target produced by 11 It can be seen that the density is higher than that of the target produced by, and the pre-sputtering time is much shorter.
Similarly, it can be seen that the targets produced by the inventive methods 12 to 20 have a higher density and a significantly shorter pre-sputtering time than the targets produced by the conventional methods 12 to 20.
Claims (3)
前記ガスアトマイズ粉末は、原子％でＧａ：５〜２０％未満を含有し、残部がＳｂおよび不可避不純物からなる組成を有し、
前記加圧焼結は、温度：４００〜６００℃、１〜３時間保持の条件で行なわれることを特徴とするプレスパッタ時間の短い相変化記録膜形成用ターゲットの製造方法。 In a method for producing a target for forming a phase change recording film by pressure sintering a gas atomized powder as a raw material powder,
The gas atomized powder, Ga in atomic%: contains less than 5-20%, possess the balance consisting of Sb and inevitable impurities,
The method for producing a target for forming a phase change recording film having a short pre-sputtering time is characterized in that the pressure sintering is performed under conditions of temperature: 400 to 600 ° C. and holding for 1 to 3 hours .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004325844A JP4687949B2 (en) | 2004-11-10 | 2004-11-10 | Method for producing target for forming phase change recording film with short pre-sputtering time |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004325844A JP4687949B2 (en) | 2004-11-10 | 2004-11-10 | Method for producing target for forming phase change recording film with short pre-sputtering time |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006137962A JP2006137962A (en) | 2006-06-01 |
| JP4687949B2 true JP4687949B2 (en) | 2011-05-25 |
Family
ID=36618968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004325844A Expired - Fee Related JP4687949B2 (en) | 2004-11-10 | 2004-11-10 | Method for producing target for forming phase change recording film with short pre-sputtering time |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4687949B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101044369B1 (en) * | 2007-01-25 | 2011-06-29 | 가부시키가이샤 아루박 | Method for forming chalcogenide film and method for manufacturing recording element |
| SG11201704465WA (en) | 2015-03-04 | 2017-06-29 | Jx Nippon Mining & Metals Corp | Magnetic material sputtering target and method for producing same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11279752A (en) * | 1998-03-27 | 1999-10-12 | Sumitomo Metal Mining Co Ltd | Production of sputtering target for phase transition-type optical recording |
| JP2001098366A (en) * | 1999-07-26 | 2001-04-10 | Sanyo Special Steel Co Ltd | METHOD OF PRODUCING Ge-Sb-Te SPUTTERING TARGET MATERIAL |
| JP2002240432A (en) * | 2001-02-20 | 2002-08-28 | Ricoh Co Ltd | Optical recording medium, manufacturing method therefor, and optical recording reproducing apparatus |
| JP2004292895A (en) * | 2003-03-27 | 2004-10-21 | Mitsubishi Materials Corp | Method for manufacturing high-strength sputtering target for forming phase-change memory film |
-
2004
- 2004-11-10 JP JP2004325844A patent/JP4687949B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11279752A (en) * | 1998-03-27 | 1999-10-12 | Sumitomo Metal Mining Co Ltd | Production of sputtering target for phase transition-type optical recording |
| JP2001098366A (en) * | 1999-07-26 | 2001-04-10 | Sanyo Special Steel Co Ltd | METHOD OF PRODUCING Ge-Sb-Te SPUTTERING TARGET MATERIAL |
| JP2002240432A (en) * | 2001-02-20 | 2002-08-28 | Ricoh Co Ltd | Optical recording medium, manufacturing method therefor, and optical recording reproducing apparatus |
| JP2004292895A (en) * | 2003-03-27 | 2004-10-21 | Mitsubishi Materials Corp | Method for manufacturing high-strength sputtering target for forming phase-change memory film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006137962A (en) | 2006-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101157150B1 (en) | Phase change recording film having high electrical resistance and sputtering target for forming phase change recording film | |
| JP4061557B2 (en) | A sputtering target for forming a phase change film and a method for producing the same. | |
| US5896553A (en) | Single phase tungsten-titanium sputter targets and method of producing same | |
| JP4766441B2 (en) | Phase change film for semiconductor non-volatile memory and sputtering target for forming the phase change film | |
| JP2970813B2 (en) | SPUTTERING TARGET, METHOD FOR MANUFACTURING THE SAME, RECORDING THIN FILM FORMED USING THE TARGET, OPTICAL DISC | |
| JP2006245251A (en) | Phase change recording film with stable amorphous state, and sputtering target for forming it | |
| JP2003160826A (en) | Silver-alloy sputtering target for forming reflective layer on optical recording medium | |
| JP4687949B2 (en) | Method for producing target for forming phase change recording film with short pre-sputtering time | |
| JP2005117030A (en) | Phase-change film for semiconductor nonvolatile memory, and sputtering target for forming the film | |
| JP4606721B2 (en) | Phase change recording film with high electrical resistance | |
| CN113227444A (en) | Sputtering target | |
| JP4606720B2 (en) | Phase change recording film with high electrical resistance | |
| JP3903485B2 (en) | Method for producing high-strength sputtering target for phase change memory film formation | |
| JP2005117031A (en) | Phase-change film for semiconductor nonvolatile memory, and sputtering target for forming the film | |
| JP2005290404A (en) | High-strength sputtering target | |
| EP1603129A1 (en) | Silver alloy sputtering target for forming reflective layer of optical recording medium | |
| JP4454253B2 (en) | Phase change recording film having high electrical resistance and sputtering target for forming the phase change recording film | |
| JP4300328B2 (en) | Sputtering target for phase change recording film | |
| JP4172015B2 (en) | Sputtering target for phase change memory film formation with excellent spatter crack resistance | |
| JP3772971B2 (en) | Silver alloy sputtering target for reflection layer formation of optical recording media | |
| JP2000087228A (en) | Production of sputtering target | |
| JP2009249641A (en) | Sputtering target for forming phase change film with reduced generation of particle, and method for producing the same | |
| JP2006103075A (en) | Galliumantimony-base phase changing type recording film for producing phase changing type recording medium excellent in storage stability of recording mark and sputtering target for forming recording film | |
| KR100872772B1 (en) | Sputtering target and manufacturing method of the same | |
| JP2006181887A (en) | GaSb PHASE CHANGE TYPE RECORDING FILM EXCELLENT IN SHELF STABILITY OF RECORDING MARK AND SPUTTERING TARGET FOR FORMING THIS GaSb PHASE CHANGE TYPE RECORDING FILM |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070329 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090401 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100519 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100720 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100908 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101102 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110120 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110202 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4687949 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140225 Year of fee payment: 3 |
|
| LAPS | Cancellation because of no payment of annual fees |