SG11201604690QA - Ag ALLOY FILM AND SPUTTERING TARGET FOR FORMING Ag ALLOY FILM - Google Patents

Ag ALLOY FILM AND SPUTTERING TARGET FOR FORMING Ag ALLOY FILM

Info

Publication number
SG11201604690QA
SG11201604690QA SG11201604690QA SG11201604690QA SG11201604690QA SG 11201604690Q A SG11201604690Q A SG 11201604690QA SG 11201604690Q A SG11201604690Q A SG 11201604690QA SG 11201604690Q A SG11201604690Q A SG 11201604690QA SG 11201604690Q A SG11201604690Q A SG 11201604690QA
Authority
SG
Singapore
Prior art keywords
alloy film
forming
sputtering target
alloy
film
Prior art date
Application number
SG11201604690QA
Inventor
Sohei Nonaka
Shozo Komiyama
Yuto TOSHIMORI
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of SG11201604690QA publication Critical patent/SG11201604690QA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
SG11201604690QA 2014-04-09 2015-03-18 Ag ALLOY FILM AND SPUTTERING TARGET FOR FORMING Ag ALLOY FILM SG11201604690QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014080354A JP5850077B2 (en) 2014-04-09 2014-04-09 Ag alloy film and sputtering target for forming Ag alloy film
PCT/JP2015/058051 WO2015156093A1 (en) 2014-04-09 2015-03-18 Ag ALLOY FILM, AND SPUTTERING TARGET FOR FORMING Ag ALLOY FILM

Publications (1)

Publication Number Publication Date
SG11201604690QA true SG11201604690QA (en) 2016-07-28

Family

ID=54287674

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201604690QA SG11201604690QA (en) 2014-04-09 2015-03-18 Ag ALLOY FILM AND SPUTTERING TARGET FOR FORMING Ag ALLOY FILM

Country Status (7)

Country Link
EP (2) EP3428296A1 (en)
JP (1) JP5850077B2 (en)
KR (1) KR101686778B1 (en)
CN (1) CN105793449B (en)
SG (1) SG11201604690QA (en)
TW (1) TWI645052B (en)
WO (1) WO2015156093A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101710196B1 (en) * 2016-11-04 2017-02-24 희성금속 주식회사 Silver alloy composition forming conductive membrane and manufacturing method of it
JP2021075762A (en) * 2019-11-08 2021-05-20 三菱マテリアル株式会社 Ag alloy sputtering target and Ag alloy film

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003242423A1 (en) * 2002-05-28 2003-12-12 Ishifuku Metal Industry Co., Ltd. Sputtering target material
JP2004192702A (en) * 2002-12-10 2004-07-08 Tanaka Kikinzoku Kogyo Kk Silver alloy for reflection film of optical recording medium
KR100677805B1 (en) * 2003-07-23 2007-02-02 샤프 가부시키가이샤 Silver alloy material, circuit substrate, electronic device and method of manufacturing circuit substrate
JP4379602B2 (en) * 2003-08-20 2009-12-09 三菱マテリアル株式会社 Optical recording medium having translucent reflective film or reflective film as constituent layer, and Ag alloy sputtering target used for forming said reflective film
JP3968662B2 (en) * 2004-01-15 2007-08-29 三菱マテリアル株式会社 Silver alloy sputtering target for reflection film formation of optical recording media
JP4951865B2 (en) 2005-03-02 2012-06-13 日亜化学工業株式会社 Semiconductor light emitting device
JP5088545B2 (en) 2007-07-05 2012-12-05 ソニー株式会社 Electronics
JP2012059576A (en) 2010-09-09 2012-03-22 Nitto Denko Corp Organic electroluminescent element
JP5669014B2 (en) * 2011-04-06 2015-02-12 三菱マテリアル株式会社 Silver alloy sputtering target for forming conductive film and method for producing the same
KR20140015432A (en) * 2011-04-06 2014-02-06 미쓰비시 마테리알 가부시키가이샤 Silver alloy sputtering target for forming electroconductive film, and method for manufacture same
JP5488849B2 (en) * 2011-06-24 2014-05-14 三菱マテリアル株式会社 Conductive film, method for producing the same, and sputtering target used therefor
US9165750B2 (en) * 2012-01-23 2015-10-20 Jx Nippon Mining & Metals Corporation High purity copper—manganese alloy sputtering target
JP2013177667A (en) * 2012-02-02 2013-09-09 Kobe Steel Ltd Ag ALLOY FILM USED FOR REFLECTIVE FILM AND/OR PENETRATION FILM, OR ELECTRICAL WIRING AND/OR ELECTRODE, AND AG ALLOY SPUTTERING TARGET AND AG ALLOY FILLER
DE102012006718B3 (en) 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planar or tubular sputtering target and method of making the same
JP5927744B2 (en) 2012-06-25 2016-06-01 三菱マテリアル株式会社 Ag alloy conductive film and sputtering target for film formation
JP5928218B2 (en) * 2012-07-20 2016-06-01 三菱マテリアル株式会社 Ag alloy film and manufacturing method thereof
JP6198177B2 (en) * 2013-07-19 2017-09-20 三菱マテリアル株式会社 Ag alloy sputtering target

Also Published As

Publication number Publication date
EP3064603A4 (en) 2017-03-29
JP2015199996A (en) 2015-11-12
WO2015156093A1 (en) 2015-10-15
CN105793449A (en) 2016-07-20
EP3428296A1 (en) 2019-01-16
TWI645052B (en) 2018-12-21
KR20160071476A (en) 2016-06-21
EP3064603A1 (en) 2016-09-07
EP3064603B1 (en) 2018-11-28
TW201602363A (en) 2016-01-16
KR101686778B1 (en) 2016-12-14
JP5850077B2 (en) 2016-02-03
CN105793449B (en) 2017-09-29

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