SG11201606086YA - Magnetron and magnetron sputtering device - Google Patents

Magnetron and magnetron sputtering device

Info

Publication number
SG11201606086YA
SG11201606086YA SG11201606086YA SG11201606086YA SG11201606086YA SG 11201606086Y A SG11201606086Y A SG 11201606086YA SG 11201606086Y A SG11201606086Y A SG 11201606086YA SG 11201606086Y A SG11201606086Y A SG 11201606086YA SG 11201606086Y A SG11201606086Y A SG 11201606086YA
Authority
SG
Singapore
Prior art keywords
magnetron
sputtering device
magnetron sputtering
sputtering
Prior art date
Application number
SG11201606086YA
Inventor
Yujie Yang
Qiang Li
Guoqing Qiu
Zhimin Bai
Hougong Wang
Peijun Ding
Feng Lv
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of SG11201606086YA publication Critical patent/SG11201606086YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/50—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
    • H01J25/52—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field with an electron space having a shape that does not prevent any electron from moving completely around the cathode or guide electrode
    • H01J25/58—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field with an electron space having a shape that does not prevent any electron from moving completely around the cathode or guide electrode having a number of resonators; having a composite resonator, e.g. a helix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SG11201606086YA 2014-01-23 2014-12-31 Magnetron and magnetron sputtering device SG11201606086YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410032274.9A CN104810228B (en) 2014-01-23 2014-01-23 Spiral magnetron and magnetron sputtering apparatus
PCT/CN2014/095758 WO2015109927A1 (en) 2014-01-23 2014-12-31 Magnetron and magnetron sputtering device

Publications (1)

Publication Number Publication Date
SG11201606086YA true SG11201606086YA (en) 2016-08-30

Family

ID=53680790

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606086YA SG11201606086YA (en) 2014-01-23 2014-12-31 Magnetron and magnetron sputtering device

Country Status (5)

Country Link
US (1) US10381202B2 (en)
KR (1) KR101824201B1 (en)
CN (1) CN104810228B (en)
SG (1) SG11201606086YA (en)
WO (1) WO2015109927A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106609352B (en) 2015-10-27 2019-04-23 北京北方华创微电子装备有限公司 Sputtering equipment and its operating method
CN107154330B (en) * 2016-03-04 2019-01-18 北京北方华创微电子装备有限公司 The magnetron sputtering apparatus of magnetron and the application magnetron
CN108950499B (en) * 2017-05-18 2023-10-13 北京北方华创微电子装备有限公司 Magnetron rotating structure, magnetron assembly and reaction chamber
CN111304620A (en) * 2020-04-24 2020-06-19 北京北方华创微电子装备有限公司 Semiconductor processing equipment and magnetron mechanism thereof
CN113699495B (en) * 2021-06-21 2023-12-22 北京北方华创微电子装备有限公司 Magnetron sputtering assembly, magnetron sputtering equipment and magnetron sputtering method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4892633A (en) * 1988-11-14 1990-01-09 Vac-Tec Systems, Inc. Magnetron sputtering cathode
US5705429A (en) * 1993-10-04 1998-01-06 Yamaha Corporation Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius
US6267851B1 (en) * 1999-10-28 2001-07-31 Applied Komatsu Technology, Inc. Tilted sputtering target with shield to block contaminants
US7223322B2 (en) 2002-07-22 2007-05-29 Angstrom Sciences, Inc. Moving magnetic/cathode arrangement and method
US7186319B2 (en) * 2005-01-05 2007-03-06 Applied Materials, Inc. Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry
JP4768689B2 (en) 2006-09-22 2011-09-07 株式会社東芝 Magnetron type sputtering apparatus and method for manufacturing semiconductor device
CN102789938B (en) * 2011-05-18 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 The manufacture method of a kind of magnetron, magnetron and physical deposition room
CN102938358B (en) * 2011-08-15 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 Magnetron, sputtering cavity device and sputtering device
WO2013190765A1 (en) * 2012-06-22 2013-12-27 株式会社アルバック Hard mask and process for producing hard mask

Also Published As

Publication number Publication date
US20170011894A1 (en) 2017-01-12
US10381202B2 (en) 2019-08-13
CN104810228B (en) 2017-10-13
CN104810228A (en) 2015-07-29
KR20160113185A (en) 2016-09-28
WO2015109927A1 (en) 2015-07-30
KR101824201B1 (en) 2018-01-31

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