SG11201706572YA - Constructions comprising stacked memory arrays - Google Patents

Constructions comprising stacked memory arrays

Info

Publication number
SG11201706572YA
SG11201706572YA SG11201706572YA SG11201706572YA SG11201706572YA SG 11201706572Y A SG11201706572Y A SG 11201706572YA SG 11201706572Y A SG11201706572Y A SG 11201706572YA SG 11201706572Y A SG11201706572Y A SG 11201706572YA SG 11201706572Y A SG11201706572Y A SG 11201706572YA
Authority
SG
Singapore
Prior art keywords
constructions
memory arrays
stacked memory
stacked
arrays
Prior art date
Application number
SG11201706572YA
Other languages
English (en)
Inventor
Andrea Redaelli
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11201706572YA publication Critical patent/SG11201706572YA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
SG11201706572YA 2015-03-19 2015-12-22 Constructions comprising stacked memory arrays SG11201706572YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/662,920 US9691475B2 (en) 2015-03-19 2015-03-19 Constructions comprising stacked memory arrays
PCT/US2015/067264 WO2016148757A1 (fr) 2015-03-19 2015-12-22 Constructions comprenant des réseaux de mémoires empilées

Publications (1)

Publication Number Publication Date
SG11201706572YA true SG11201706572YA (en) 2017-09-28

Family

ID=56919289

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201706572YA SG11201706572YA (en) 2015-03-19 2015-12-22 Constructions comprising stacked memory arrays

Country Status (8)

Country Link
US (4) US9691475B2 (fr)
EP (1) EP3281225B1 (fr)
JP (2) JP6518779B2 (fr)
KR (1) KR102013052B1 (fr)
CN (2) CN111653586B (fr)
SG (1) SG11201706572YA (fr)
TW (1) TWI596608B (fr)
WO (1) WO2016148757A1 (fr)

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KR102659033B1 (ko) 2019-10-14 2024-04-22 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3차원 상변화 메모리 디바이스들
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US11158787B2 (en) 2019-12-17 2021-10-26 Macronix International Co., Ltd. C—As—Se—Ge ovonic materials for selector devices and memory devices using same
US11282747B2 (en) 2020-02-24 2022-03-22 Micron Technology, Inc. Methods of forming microelectronic devices, and related microelectronic devices, and electronic systems
US11362276B2 (en) 2020-03-27 2022-06-14 Macronix International Co., Ltd. High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application
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Also Published As

Publication number Publication date
US20190006423A1 (en) 2019-01-03
CN107408570A (zh) 2017-11-28
US20160276022A1 (en) 2016-09-22
CN111653586B (zh) 2023-07-21
JP6518779B2 (ja) 2019-05-22
WO2016148757A1 (fr) 2016-09-22
EP3281225A4 (fr) 2018-12-05
JP2018512728A (ja) 2018-05-17
TWI596608B (zh) 2017-08-21
JP6812488B2 (ja) 2021-01-13
JP2019165231A (ja) 2019-09-26
US9691475B2 (en) 2017-06-27
US20180122860A1 (en) 2018-05-03
US20170263685A1 (en) 2017-09-14
KR20170109014A (ko) 2017-09-27
CN107408570B (zh) 2020-07-03
TW201703043A (zh) 2017-01-16
US9881973B2 (en) 2018-01-30
EP3281225B1 (fr) 2020-03-11
EP3281225A1 (fr) 2018-02-14
US10147764B2 (en) 2018-12-04
KR102013052B1 (ko) 2019-08-21
CN111653586A (zh) 2020-09-11
US10396127B2 (en) 2019-08-27

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