HK1223195A1 - 反熔絲存儲器單元 - Google Patents
反熔絲存儲器單元Info
- Publication number
- HK1223195A1 HK1223195A1 HK16111337.1A HK16111337A HK1223195A1 HK 1223195 A1 HK1223195 A1 HK 1223195A1 HK 16111337 A HK16111337 A HK 16111337A HK 1223195 A1 HK1223195 A1 HK 1223195A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- memory cell
- fuse memory
- fuse
- cell
- memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/244,499 US9123572B2 (en) | 2004-05-06 | 2014-04-03 | Anti-fuse memory cell |
PCT/CA2015/050266 WO2015149182A1 (en) | 2014-04-03 | 2015-04-02 | Anti-fuse memory cell |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1223195A1 true HK1223195A1 (zh) | 2017-07-21 |
Family
ID=54239181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK16111337.1A HK1223195A1 (zh) | 2014-04-03 | 2016-09-28 | 反熔絲存儲器單元 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP3108497A4 (zh) |
KR (1) | KR101873281B1 (zh) |
CN (1) | CN105849861B (zh) |
CA (1) | CA2887223C (zh) |
HK (1) | HK1223195A1 (zh) |
TW (1) | TWI511144B (zh) |
WO (1) | WO2015149182A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10566253B2 (en) * | 2017-11-30 | 2020-02-18 | Nanya Technology Corporation | Electronic device and electrical testing method thereof |
CN108039345B (zh) * | 2017-12-29 | 2018-12-11 | 长鑫存储技术有限公司 | 反熔丝结构及其形成方法、半导体器件 |
US10833206B2 (en) | 2018-12-11 | 2020-11-10 | Micron Technology, Inc. | Microelectronic devices including capacitor structures and methods of forming microelectronic devices |
US11563015B2 (en) | 2020-02-11 | 2023-01-24 | Taiwan Semiconductor Manufacturing Company Limited | Memory devices and methods of manufacturing thereof |
CN113948144B (zh) * | 2020-07-16 | 2023-09-12 | 长鑫存储技术有限公司 | 反熔丝存储单元状态检测电路及存储器 |
TWI744130B (zh) * | 2020-12-09 | 2021-10-21 | 億而得微電子股份有限公司 | 低成本低電壓反熔絲陣列 |
CN113345506B (zh) | 2021-08-04 | 2021-11-05 | 南京沁恒微电子股份有限公司 | 一种反熔丝存储单元及其数据读写电路 |
TWI769095B (zh) * | 2021-10-08 | 2022-06-21 | 億而得微電子股份有限公司 | 高寫入效率的反熔絲陣列 |
CN115332257B (zh) * | 2022-10-13 | 2023-01-06 | 长鑫存储技术有限公司 | 一种反熔丝单元及反熔丝阵列 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6777757B2 (en) | 2002-04-26 | 2004-08-17 | Kilopass Technologies, Inc. | High density semiconductor memory cell and memory array using a single transistor |
US6933557B2 (en) * | 2003-08-11 | 2005-08-23 | Atmel Corporation | Fowler-Nordheim block alterable EEPROM memory cell |
US7755162B2 (en) * | 2004-05-06 | 2010-07-13 | Sidense Corp. | Anti-fuse memory cell |
TW200629543A (en) * | 2004-12-27 | 2006-08-16 | St Microelectronics Crolles 2 | An anti-fuse cell and its manufacturing process |
US7528015B2 (en) * | 2005-06-28 | 2009-05-05 | Freescale Semiconductor, Inc. | Tunable antifuse element and method of manufacture |
US8933492B2 (en) * | 2008-04-04 | 2015-01-13 | Sidense Corp. | Low VT antifuse device |
JP2011100823A (ja) * | 2009-11-05 | 2011-05-19 | Renesas Electronics Corp | 半導体記憶装置及び半導体記憶装置の製造方法 |
CA2682092C (en) * | 2009-10-30 | 2010-11-02 | Sidense Corp. | And-type one time programmable memory cell |
US8164125B2 (en) * | 2010-05-07 | 2012-04-24 | Power Integrations, Inc. | Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuit |
US9224496B2 (en) * | 2010-08-11 | 2015-12-29 | Shine C. Chung | Circuit and system of aggregated area anti-fuse in CMOS processes |
JP5723483B2 (ja) * | 2012-03-08 | 2015-05-27 | 旭化成エレクトロニクス株式会社 | 半導体装置の製造方法 |
CA2815989C (en) * | 2012-05-16 | 2014-06-10 | Sidense Corp. | A power up detection system for a memory device |
WO2013170387A1 (en) * | 2012-05-18 | 2013-11-21 | Sidense Corp. | Circuit and method for reducing write disturb in a non-volatile memory device |
-
2015
- 2015-04-02 WO PCT/CA2015/050266 patent/WO2015149182A1/en active Application Filing
- 2015-04-02 KR KR1020167020381A patent/KR101873281B1/ko active IP Right Grant
- 2015-04-02 TW TW104111003A patent/TWI511144B/zh active
- 2015-04-02 CN CN201580002116.1A patent/CN105849861B/zh active Active
- 2015-04-02 EP EP15773817.0A patent/EP3108497A4/en active Pending
- 2015-04-02 CA CA2887223A patent/CA2887223C/en active Active
-
2016
- 2016-09-28 HK HK16111337.1A patent/HK1223195A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2015149182A1 (en) | 2015-10-08 |
CA2887223A1 (en) | 2015-09-24 |
EP3108497A4 (en) | 2017-04-19 |
EP3108497A1 (en) | 2016-12-28 |
TW201543492A (zh) | 2015-11-16 |
CN105849861A (zh) | 2016-08-10 |
TWI511144B (zh) | 2015-12-01 |
KR101873281B1 (ko) | 2018-09-21 |
CN105849861B (zh) | 2018-08-10 |
CA2887223C (en) | 2016-02-09 |
KR20160127721A (ko) | 2016-11-04 |
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