SG11201706572YA - Constructions comprising stacked memory arrays - Google Patents
Constructions comprising stacked memory arraysInfo
- Publication number
- SG11201706572YA SG11201706572YA SG11201706572YA SG11201706572YA SG11201706572YA SG 11201706572Y A SG11201706572Y A SG 11201706572YA SG 11201706572Y A SG11201706572Y A SG 11201706572YA SG 11201706572Y A SG11201706572Y A SG 11201706572YA SG 11201706572Y A SG11201706572Y A SG 11201706572YA
- Authority
- SG
- Singapore
- Prior art keywords
- constructions
- memory arrays
- stacked memory
- stacked
- arrays
- Prior art date
Links
- 238000003491 array Methods 0.000 title 1
- 238000010276 construction Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/662,920 US9691475B2 (en) | 2015-03-19 | 2015-03-19 | Constructions comprising stacked memory arrays |
| PCT/US2015/067264 WO2016148757A1 (en) | 2015-03-19 | 2015-12-22 | Constructions comprising stacked memory arrays |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201706572YA true SG11201706572YA (en) | 2017-09-28 |
Family
ID=56919289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201706572YA SG11201706572YA (en) | 2015-03-19 | 2015-12-22 | Constructions comprising stacked memory arrays |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9691475B2 (en) |
| EP (1) | EP3281225B1 (en) |
| JP (2) | JP6518779B2 (en) |
| KR (1) | KR102013052B1 (en) |
| CN (2) | CN111653586B (en) |
| SG (1) | SG11201706572YA (en) |
| TW (1) | TWI596608B (en) |
| WO (1) | WO2016148757A1 (en) |
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| US9691475B2 (en) * | 2015-03-19 | 2017-06-27 | Micron Technology, Inc. | Constructions comprising stacked memory arrays |
| KR102375591B1 (en) * | 2015-10-27 | 2022-03-16 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
| US10276555B2 (en) * | 2016-10-01 | 2019-04-30 | Samsung Electronics Co., Ltd. | Method and system for providing a magnetic cell usable in spin transfer torque applications and including a switchable shunting layer |
| KR102673120B1 (en) * | 2016-12-05 | 2024-06-05 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
| US10103325B2 (en) * | 2016-12-15 | 2018-10-16 | Winbond Electronics Corp. | Resistance change memory device and fabrication method thereof |
| US10157667B2 (en) | 2017-04-28 | 2018-12-18 | Micron Technology, Inc. | Mixed cross point memory |
| KR20190142335A (en) * | 2017-05-01 | 2019-12-26 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | Selective element and memory |
| KR102307058B1 (en) * | 2017-07-06 | 2021-10-01 | 삼성전자주식회사 | Semiconductor device including data storage pattern between separation lines |
| US10541271B2 (en) | 2017-10-18 | 2020-01-21 | Macronix International Co., Ltd. | Superlattice-like switching devices |
| KR20190056867A (en) | 2017-11-17 | 2019-05-27 | 에스케이하이닉스 주식회사 | Electronic device and method for fabricating the same |
| CN110660822A (en) | 2018-06-29 | 2020-01-07 | 三星电子株式会社 | Variable resistance memory device |
| US10374009B1 (en) | 2018-07-17 | 2019-08-06 | Macronix International Co., Ltd. | Te-free AsSeGe chalcogenides for selector devices and memory devices using same |
| KR102557911B1 (en) * | 2018-08-31 | 2023-07-19 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
| US10903216B2 (en) | 2018-09-07 | 2021-01-26 | Samsung Electronics Co., Ltd. | Semiconductor memory device and method of fabricating the same |
| KR20200127746A (en) * | 2019-05-03 | 2020-11-11 | 에스케이하이닉스 주식회사 | Electronic device |
| KR20210001262A (en) | 2019-06-27 | 2021-01-06 | 에스케이하이닉스 주식회사 | Electronic device |
| CN110914907B (en) | 2019-10-14 | 2021-08-31 | 长江存储科技有限责任公司 | Three-dimensional phase change memory device |
| JP7394881B2 (en) * | 2019-10-14 | 2023-12-08 | 長江存儲科技有限責任公司 | Method for forming three-dimensional phase change memory devices |
| US11289540B2 (en) | 2019-10-15 | 2022-03-29 | Macronix International Co., Ltd. | Semiconductor device and memory cell |
| KR20210069164A (en) | 2019-12-02 | 2021-06-11 | 삼성전자주식회사 | Variable resistance memory device and method of forming the same |
| US11158787B2 (en) | 2019-12-17 | 2021-10-26 | Macronix International Co., Ltd. | C—As—Se—Ge ovonic materials for selector devices and memory devices using same |
| US11282747B2 (en) * | 2020-02-24 | 2022-03-22 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, and electronic systems |
| US11362276B2 (en) | 2020-03-27 | 2022-06-14 | Macronix International Co., Ltd. | High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application |
| EP3890024B1 (en) * | 2020-03-30 | 2024-05-01 | STMicroelectronics (Crolles 2) SAS | Electronic chip with two phase change memories and method of fabrication |
| KR102610966B1 (en) * | 2022-05-10 | 2023-12-06 | 고려대학교 산학협력단 | Multilevel phase change random access memory device via conductive filament nanoheater formation |
| CN117596898B (en) * | 2023-11-29 | 2024-05-31 | 新存科技(武汉)有限责任公司 | Phase change memory, forming method thereof and leakage testing method |
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-
2015
- 2015-03-19 US US14/662,920 patent/US9691475B2/en active Active
- 2015-12-22 SG SG11201706572YA patent/SG11201706572YA/en unknown
- 2015-12-22 CN CN202010516766.0A patent/CN111653586B/en active Active
- 2015-12-22 CN CN201580077081.8A patent/CN107408570B/en active Active
- 2015-12-22 WO PCT/US2015/067264 patent/WO2016148757A1/en active Application Filing
- 2015-12-22 EP EP15885764.9A patent/EP3281225B1/en active Active
- 2015-12-22 KR KR1020177024085A patent/KR102013052B1/en active IP Right Grant
- 2015-12-22 JP JP2017544894A patent/JP6518779B2/en active Active
-
2016
- 2016-01-07 TW TW105100427A patent/TWI596608B/en active
-
2017
- 2017-05-30 US US15/607,786 patent/US9881973B2/en active Active
- 2017-12-18 US US15/845,938 patent/US10147764B2/en active Active
-
2018
- 2018-08-14 US US16/103,032 patent/US10396127B2/en active Active
-
2019
- 2019-04-22 JP JP2019080605A patent/JP6812488B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6812488B2 (en) | 2021-01-13 |
| EP3281225A1 (en) | 2018-02-14 |
| EP3281225A4 (en) | 2018-12-05 |
| EP3281225B1 (en) | 2020-03-11 |
| US10396127B2 (en) | 2019-08-27 |
| US20190006423A1 (en) | 2019-01-03 |
| WO2016148757A1 (en) | 2016-09-22 |
| JP6518779B2 (en) | 2019-05-22 |
| US10147764B2 (en) | 2018-12-04 |
| KR20170109014A (en) | 2017-09-27 |
| TWI596608B (en) | 2017-08-21 |
| US20180122860A1 (en) | 2018-05-03 |
| CN107408570B (en) | 2020-07-03 |
| US9881973B2 (en) | 2018-01-30 |
| US20160276022A1 (en) | 2016-09-22 |
| TW201703043A (en) | 2017-01-16 |
| JP2018512728A (en) | 2018-05-17 |
| KR102013052B1 (en) | 2019-08-21 |
| US20170263685A1 (en) | 2017-09-14 |
| CN111653586B (en) | 2023-07-21 |
| CN107408570A (en) | 2017-11-28 |
| JP2019165231A (en) | 2019-09-26 |
| CN111653586A (en) | 2020-09-11 |
| US9691475B2 (en) | 2017-06-27 |
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