SG11201505056WA - Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device - Google Patents

Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device

Info

Publication number
SG11201505056WA
SG11201505056WA SG11201505056WA SG11201505056WA SG11201505056WA SG 11201505056W A SG11201505056W A SG 11201505056WA SG 11201505056W A SG11201505056W A SG 11201505056WA SG 11201505056W A SG11201505056W A SG 11201505056WA SG 11201505056W A SG11201505056W A SG 11201505056WA
Authority
SG
Singapore
Prior art keywords
substrate
manufacturing
mask blank
reflective film
mask
Prior art date
Application number
SG11201505056WA
Other languages
English (en)
Inventor
Kazuhiro Hamamoto
Toshihiko Orihara
Tsutomu Shoki
Junichi Horikawa
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201505056WA publication Critical patent/SG11201505056WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Surface Treatment Of Glass (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201505056WA 2012-12-28 2013-12-27 Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device SG11201505056WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012287376 2012-12-28
PCT/JP2013/085049 WO2014104276A1 (ja) 2012-12-28 2013-12-27 マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、マスクブランク用基板の製造方法及び多層反射膜付き基板の製造方法並びに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG11201505056WA true SG11201505056WA (en) 2015-08-28

Family

ID=51021347

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201505056WA SG11201505056WA (en) 2012-12-28 2013-12-27 Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device
SG10201605473TA SG10201605473TA (en) 2012-12-28 2013-12-27 Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201605473TA SG10201605473TA (en) 2012-12-28 2013-12-27 Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (2) US9581895B2 (ja)
JP (2) JP5712336B2 (ja)
KR (2) KR101995879B1 (ja)
SG (2) SG11201505056WA (ja)
TW (2) TWI652541B (ja)
WO (1) WO2014104276A1 (ja)

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JP6372007B2 (ja) * 2015-02-03 2018-08-15 Ａｇｃ株式会社 マスクブランク用ガラス基板
JP6665571B2 (ja) * 2015-02-16 2020-03-13 大日本印刷株式会社 フォトマスク、フォトマスクブランクス、およびフォトマスクの製造方法
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JP6717211B2 (ja) * 2017-01-16 2020-07-01 Ａｇｃ株式会社 マスクブランク用基板、マスクブランク、およびフォトマスク
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Also Published As

Publication number Publication date
KR20170118981A (ko) 2017-10-25
KR20150103142A (ko) 2015-09-09
KR101878164B1 (ko) 2018-07-13
JP5712336B2 (ja) 2015-05-07
JP6262165B2 (ja) 2018-01-17
US9581895B2 (en) 2017-02-28
US20150331312A1 (en) 2015-11-19
SG10201605473TA (en) 2016-09-29
US10025176B2 (en) 2018-07-17
TWI652541B (zh) 2019-03-01
WO2014104276A1 (ja) 2014-07-03
TWI625592B (zh) 2018-06-01
JPWO2014104276A1 (ja) 2017-01-19
US20170131629A1 (en) 2017-05-11
JP2015148807A (ja) 2015-08-20
TW201432369A (zh) 2014-08-16
TW201823850A (zh) 2018-07-01
KR101995879B1 (ko) 2019-07-03

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