JP4873694B2 - 触媒支援型化学加工方法 - Google Patents
触媒支援型化学加工方法 Download PDFInfo
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- JP4873694B2 JP4873694B2 JP2006110200A JP2006110200A JP4873694B2 JP 4873694 B2 JP4873694 B2 JP 4873694B2 JP 2006110200 A JP2006110200 A JP 2006110200A JP 2006110200 A JP2006110200 A JP 2006110200A JP 4873694 B2 JP4873694 B2 JP 4873694B2
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- 239000003054 catalyst Substances 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 30
- 238000012993 chemical processing Methods 0.000 title claims description 20
- 238000012545 processing Methods 0.000 claims description 99
- 239000007800 oxidant agent Substances 0.000 claims description 21
- 230000001590 oxidative effect Effects 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000003672 processing method Methods 0.000 claims description 11
- 229910052723 transition metal Inorganic materials 0.000 claims description 10
- 150000003624 transition metals Chemical class 0.000 claims description 10
- 239000006061 abrasive grain Substances 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000010979 ruby Substances 0.000 claims description 3
- 229910001750 ruby Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000003082 abrasive agent Substances 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 22
- 238000003754 machining Methods 0.000 description 15
- 239000007788 liquid Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
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- 230000008569 process Effects 0.000 description 7
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- 230000003197 catalytic effect Effects 0.000 description 5
- 238000009499 grossing Methods 0.000 description 5
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- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- 230000010363 phase shift Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229940125898 compound 5 Drugs 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Catalysts (AREA)
Description
尚、処理液で満たされた容器22内に被加工物と触媒が配置された浸漬型の形態に限らず、定盤23上にノズル26(図7に破線で記載)から酸化剤からなる処理液を流下して、被加工物と触媒の間に処理液を供給するようにしてもよい。
また、図7とは、上下を逆にした形態でもよい。その場合には、被加工物の被加工面を上向きに配置し、それに対向するように上方に配置された全部又は一部が触媒作用を有する遷移金属材料で構成された定盤を、被加工物に軽く接触又は微小間隔を設けて近づけてもよい。
2 被加工物
3 活性種
4 表面原子
5 化合物
6 酸化剤分子
7 残余分子
11 加工容器
12 試料台
13 SiCウエハ
14 支持棒
15 ワイヤー
21 ポリッシング装置
22 加工容器
23 定盤
24 回転軸
25 ホルダー
26 ノズル
Claims (4)
- 結晶性SiC、焼結SiC、GaN、サファイヤ、ルビー、ダイヤモンドの内から選ばれた1種である被加工物を加工する加工方法であって、加工基準面に遷移金属のみからなる触媒を用い、砥粒や研磨材を含まずH 2 O 2 からなる酸化剤の溶液中に被加工物を配し,前記加工基準面を被加工物の被加工面に接触、もしくは極近接させて配し、前記酸化剤の溶液中で被加工物と前記加工基準面を相対運動させることにより、前記加工基準面の触媒表面上で酸化剤から生成した酸化力を持つ活性種と被加工物の表面原子との化学反応で生成した化合物を除去、あるいは溶出させることによって被加工物を加工することを特徴とする触媒支援型化学加工方法。
- 前記加工基準面を形成する触媒が、Fe、Ni、Co、Cu、Cr、Tiから選択した1種又は2種以上の組み合わせからなる請求項1記載の触媒支援型化学加工方法。
- 前記触媒がFe、被加工物がSiC又はGaNであり、フェントン反応を利用して加工する請求項1記載の触媒支援型化学加工方法。
- 前記触媒を表面に有し、加工基準面となる平坦な回転定盤及び該定盤の回転軸に対して偏心した回転軸を有するホルダーとを備え、
前記触媒の表面と前記ホルダーに保持した被加工物の被加工面の間に前記酸化剤の溶液を供給し、
前記ホルダーに保持した被加工物を前記定盤に所定の押圧力で押圧しながら回転させて、被加工物の被加工面を平坦化加工してなる請求項1〜3何れかに記載の触媒支援型化学加工方法。
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Cited By (3)
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WO2015008572A1 (ja) | 2013-07-19 | 2015-01-22 | 国立大学法人名古屋工業大学 | 金属製研磨パッドおよびその製造方法 |
CN109482188A (zh) * | 2018-12-19 | 2019-03-19 | 中国环境科学研究院 | 一种低价介孔铁钴类芬顿催化剂及其制备方法 |
WO2021129124A1 (zh) * | 2019-12-23 | 2021-07-01 | 广东工业大学 | 一种电芬顿集群磁流变复合研磨抛光装置及方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008136983A (ja) * | 2006-12-05 | 2008-06-19 | Osaka Univ | 触媒支援型化学加工方法及び加工装置 |
JP4982742B2 (ja) * | 2006-09-13 | 2012-07-25 | 国立大学法人 熊本大学 | 磁性微粒子を用いた触媒化学加工方法及び装置 |
JP5315573B2 (ja) * | 2007-10-12 | 2013-10-16 | 国立大学法人 熊本大学 | 加工装置および加工方法 |
JP4887266B2 (ja) * | 2007-10-15 | 2012-02-29 | 株式会社荏原製作所 | 平坦化方法 |
JP5343250B2 (ja) * | 2009-02-19 | 2013-11-13 | 国立大学法人 熊本大学 | 触媒支援型化学加工方法及びそれを用いた加工装置 |
JP5364959B2 (ja) | 2009-03-27 | 2013-12-11 | 国立大学法人大阪大学 | 研磨方法及び研磨装置 |
US10481488B2 (en) | 2012-12-27 | 2019-11-19 | Hoya Corporation | Mask blank substrate processing device, mask blank substrate processing method, mask blank substrate fabrication method, mask blank fabrication method, and transfer mask fabrication method |
TWI652541B (zh) | 2012-12-28 | 2019-03-01 | 日商Hoya股份有限公司 | Method for manufacturing substrate for mask material, method for manufacturing substrate with multilayer reflective film, method for producing reflective mask material, and method for manufacturing semiconductor device |
JP6016301B2 (ja) * | 2013-02-13 | 2016-10-26 | 昭和電工株式会社 | 単結晶SiC基板の表面加工方法、その製造方法及び単結晶SiC基板の表面加工用研削プレート |
US10199242B2 (en) | 2014-12-31 | 2019-02-05 | Osaka University | Planarizing processing method and planarizing processing device |
JP6548919B2 (ja) * | 2015-03-08 | 2019-07-24 | 東邦エンジニアリング株式会社 | パッドのクリーニング方法 |
CN104745095B (zh) * | 2015-04-03 | 2017-06-06 | 清华大学 | 一种GaN厚膜片CMP组合物及其制备方法 |
JP6187948B1 (ja) | 2016-03-11 | 2017-08-30 | 東邦エンジニアリング株式会社 | 平坦加工装置、その動作方法および加工物の製造方法 |
CN109126842A (zh) * | 2018-08-01 | 2019-01-04 | 广州大学 | 介孔钴系碳硅纳米球芬顿催化剂的制备方法、介孔钴系碳硅纳米球芬顿催化剂及其应用 |
WO2021199426A1 (ja) * | 2020-04-03 | 2021-10-07 | 三菱電機株式会社 | 研磨方法、半導体基板の製造方法 |
CN116494026B (zh) * | 2023-06-09 | 2024-05-31 | 浙江大学 | 一种面向硬脆元件的电化学催化原子级柔性抛光方法 |
Family Cites Families (3)
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JP2002299294A (ja) * | 2001-03-30 | 2002-10-11 | Toshiba Corp | 化学的機械的研磨処理システム及び半導体装置の製造方法 |
JP2002334856A (ja) * | 2001-05-09 | 2002-11-22 | Sumitomo Heavy Ind Ltd | 光触媒を用いた微細加工方法及び装置 |
JP4721320B2 (ja) * | 2004-09-13 | 2011-07-13 | オルガノ株式会社 | 有機汚染物質の分解方法 |
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Cited By (5)
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WO2015008572A1 (ja) | 2013-07-19 | 2015-01-22 | 国立大学法人名古屋工業大学 | 金属製研磨パッドおよびその製造方法 |
KR20160043962A (ko) | 2013-07-19 | 2016-04-22 | 국립대학법인 나고야공업대학 | 금속제 연마 패드 및 그 제조 방법 |
US9815170B2 (en) | 2013-07-19 | 2017-11-14 | Nagoya Institute Of Technology | Metallic abrasive pad and method for manufacturing same |
CN109482188A (zh) * | 2018-12-19 | 2019-03-19 | 中国环境科学研究院 | 一种低价介孔铁钴类芬顿催化剂及其制备方法 |
WO2021129124A1 (zh) * | 2019-12-23 | 2021-07-01 | 广东工业大学 | 一种电芬顿集群磁流变复合研磨抛光装置及方法 |
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