JP5343250B2 - 触媒支援型化学加工方法及びそれを用いた加工装置 - Google Patents
触媒支援型化学加工方法及びそれを用いた加工装置 Download PDFInfo
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- JP5343250B2 JP5343250B2 JP2009037182A JP2009037182A JP5343250B2 JP 5343250 B2 JP5343250 B2 JP 5343250B2 JP 2009037182 A JP2009037182 A JP 2009037182A JP 2009037182 A JP2009037182 A JP 2009037182A JP 5343250 B2 JP5343250 B2 JP 5343250B2
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- fine particles
- catalyst
- workpiece
- chemical processing
- transition metal
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- 239000003054 catalyst Substances 0.000 title claims description 47
- 238000000034 method Methods 0.000 title claims description 44
- 238000012993 chemical processing Methods 0.000 title claims description 25
- 238000012545 processing Methods 0.000 title description 45
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 90
- 239000010419 fine particle Substances 0.000 claims description 78
- 238000005498 polishing Methods 0.000 claims description 47
- 229910052742 iron Inorganic materials 0.000 claims description 34
- 229910052723 transition metal Inorganic materials 0.000 claims description 33
- 150000003624 transition metals Chemical class 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 11
- 238000003825 pressing Methods 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 8
- 239000010432 diamond Substances 0.000 claims description 8
- 229910017083 AlN Inorganic materials 0.000 claims description 5
- 239000010979 ruby Substances 0.000 claims description 5
- 229910001750 ruby Inorganic materials 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910020203 CeO Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000002923 metal particle Substances 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 description 27
- 239000000758 substrate Substances 0.000 description 24
- 238000007517 polishing process Methods 0.000 description 10
- 230000003197 catalytic effect Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000007800 oxidant agent Substances 0.000 description 9
- 238000003672 processing method Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000013329 compounding Methods 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- -1 first Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Description
2 鉄定盤、
3 回転軸、
4 ホルダー、
5 供給口、
6 遷移金属微粒子、
7 酸化物微粒子。
Claims (8)
- 触媒としての鉄定盤上に、遷移金属微粒子と酸化物微粒子の少なくとも一方と過酸化水素水をベースとした配合研磨液を供給しながら被加工物を所定の押圧力で接触させ、前記鉄定盤と被加工物を相対的に移動させて研磨することを特徴とする触媒支援型化学加工方法。
- 前記遷移金属微粒子が、Fe、Ni、Co、Cu、Cr、Tiから選択した1種又は2種以上の組み合わせからなり、前記酸化物微粒子が、SiO2、Al2O3、CeO2、Fe2O3、TiO2から選択した1種又は2種以上の組み合わせからなる請求項1記載の触媒支援型化学加工方法。
- 前記被加工物が、結晶性SiC、焼結SiC、GaN、Si3N4、AlN、サファイヤ、ルビー、ダイヤモンドの内から選ばれた1種である請求項1又は2記載の触媒支援型化学加工方法。
- 前記遷移金属微粒子がFe、前記酸化物微粒子がCeO2であり、前記被加工物が単結晶SiC又は単結晶GaNである請求項1記載の触媒支援型化学加工方法。
- 触媒としての平坦な回転鉄定盤と、該鉄定盤の回転軸に対して偏心した回転軸を有し且つ押圧手段を有するホルダーとを備え、遷移金属微粒子と酸化物微粒子の少なくとも一方と過酸化水素水をベースとした配合研磨液を、鉄定盤上に供給しながら被加工物を前記鉄定盤に所定の押圧力で押圧し、前記鉄定盤とホルダーを回転させて研磨することを特徴とする触媒支援型化学加工装置。
- 前記遷移金属微粒子が、Fe、Ni、Co、Cu、Cr、Tiから選択した1種又は2種以上の組み合わせからなり、前記酸化物微粒子が、SiO2、Al2O3、CeO2、Fe2O3、TiO2から選択した1種又は2種以上の組み合わせからなる請求項5記載の触媒支援型化学加工装置。
- 前記被加工物が、結晶性SiC、焼結SiC、GaN、Si3N4、AlN、サファイヤ、ルビー、ダイヤモンドの内から選ばれた1種である請求項5又は6記載の触媒支援型化学加工装置。
- 前記遷移金属微粒子がFe、前記酸化物微粒子がCeO2であり、前記被加工物が単結晶SiC又は単結晶GaNである請求項5記載の触媒支援型化学加工装置。
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103842131B (zh) * | 2011-08-31 | 2017-01-18 | 宁波晶钻工业科技有限公司 | 金刚石研磨机 |
SG11201505421SA (en) * | 2013-01-18 | 2015-08-28 | Hoya Corp | Method for manufacturing mask blank substrate, method for manufacturing mask blank and method for manufacturing transfer mask |
JP6016301B2 (ja) | 2013-02-13 | 2016-10-26 | 昭和電工株式会社 | 単結晶SiC基板の表面加工方法、その製造方法及び単結晶SiC基板の表面加工用研削プレート |
JP6270345B2 (ja) * | 2013-06-05 | 2018-01-31 | キヤノン株式会社 | 光学素子の製造方法 |
JP6328502B2 (ja) * | 2013-07-04 | 2018-05-23 | Hoya株式会社 | 基板の製造方法、マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板製造装置 |
JP6285775B2 (ja) * | 2014-03-31 | 2018-02-28 | 日揮触媒化成株式会社 | 研磨用金属担持金属酸化物粒子および研磨剤 |
JP6831541B2 (ja) * | 2018-03-06 | 2021-02-17 | 株式会社ジェイテックコーポレーション | 光学素子の製造方法 |
CN111805780B (zh) * | 2020-06-19 | 2022-03-22 | 郑州磨料磨具磨削研究所有限公司 | 一种单晶金刚石曲面精密加工方法及系统 |
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US5972792A (en) * | 1996-10-18 | 1999-10-26 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
JP3734722B2 (ja) * | 2001-05-23 | 2006-01-11 | 独立行政法人科学技術振興機構 | ダイヤモンド薄膜の化学機械研磨方法 |
JP2004358643A (ja) * | 2003-06-09 | 2004-12-24 | Roki Techno Co Ltd | 固定砥粒パッドを使用する研磨方法 |
JP4506399B2 (ja) * | 2004-10-13 | 2010-07-21 | 株式会社荏原製作所 | 触媒支援型化学加工方法 |
JP4873694B2 (ja) * | 2006-04-12 | 2012-02-08 | 国立大学法人 熊本大学 | 触媒支援型化学加工方法 |
JP2008136983A (ja) * | 2006-12-05 | 2008-06-19 | Osaka Univ | 触媒支援型化学加工方法及び加工装置 |
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