JPWO2013133198A1 - 研磨用組成物、及び当該研磨用組成物を用いた化合物半導体基板の製造方法 - Google Patents
研磨用組成物、及び当該研磨用組成物を用いた化合物半導体基板の製造方法 Download PDFInfo
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- JPWO2013133198A1 JPWO2013133198A1 JP2014503829A JP2014503829A JPWO2013133198A1 JP WO2013133198 A1 JPWO2013133198 A1 JP WO2013133198A1 JP 2014503829 A JP2014503829 A JP 2014503829A JP 2014503829 A JP2014503829 A JP 2014503829A JP WO2013133198 A1 JPWO2013133198 A1 JP WO2013133198A1
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- Prior art keywords
- polishing
- polishing composition
- abrasive grains
- acid
- compound semiconductor
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 190
- 239000000203 mixture Substances 0.000 title claims abstract description 95
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 150000001875 compounds Chemical class 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000002245 particle Substances 0.000 claims abstract description 72
- 239000006061 abrasive grain Substances 0.000 claims abstract description 62
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000007800 oxidant agent Substances 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003002 pH adjusting agent Substances 0.000 claims description 10
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
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- 229910002601 GaN Inorganic materials 0.000 description 6
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- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
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- 239000003814 drug Substances 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
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- CHTHALBTIRVDBM-UHFFFAOYSA-N furan-2,5-dicarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)O1 CHTHALBTIRVDBM-UHFFFAOYSA-N 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
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- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
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- 238000001000 micrograph Methods 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
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- 230000000704 physical effect Effects 0.000 description 2
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- 238000003860 storage Methods 0.000 description 2
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- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
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- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
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- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
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- DIWVBIXQCNRCFE-UHFFFAOYSA-N DL-alpha-Methoxyphenylacetic acid Chemical compound COC(C(O)=O)C1=CC=CC=C1 DIWVBIXQCNRCFE-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
Description
砥粒は化合物半導体基板の表面を物理的に研磨する働きをする。砥粒としては、例えば、酸化ケイ素、酸化アルミニウム、酸化ジルコニウム、酸化セリウム、酸化チタン、酸化マンガン、酸化鉄、酸化クロム、ダイヤモンド等からなる粒子が挙げられる。これらの粒子のなかでも、研磨速度の向上の観点から、酸化ケイ素や酸化アルミニウムからなる粒子が好ましく、酸化ケイ素からなる粒子が特に好ましい。酸化ケイ素からなる粒子としては、例えば、コロイダルシリカ、フュームドシリカ、ゾルゲル法シリカから選ばれるシリカ粒子が挙げられる。これらの粒子のなかでも、コロイダルシリカが特に好ましい。これら砥粒のうち一種を単独で用いてもよく、二種以上を組み合わせて用いてもよい。
水は他の成分の分散媒又は溶媒となる。水は、研磨用組成物に含有される他の成分の働きを阻害しないことが好ましい。このような水の例として、例えば遷移金属イオンの合計含有量が100ppb以下の水が挙げられる。水の純度は、例えば、イオン交換樹脂を用いる不純物イオンの除去、フィルターによる異物の除去、蒸留等によって高めることができる。具体的には、例えば、イオン交換水、純水、超純水、蒸留水等を用いることが好ましい。
研磨用組成物は酸化剤を含有してもよい。酸化剤は化合物半導体基板の表面を化学的に研磨する働きをする。酸化剤としては、例えば、過マンガン酸塩、過ヨウ素酸、過ヨウ素酸塩、過硫酸塩、バナジン酸塩、過酸化水素水、次亜塩素酸塩、酸化鉄、過酢酸、オゾン等が挙げられる。これらの酸化剤のなかでも、研磨速度の向上の観点から、過マンガン酸塩やバナジン酸塩が好ましい。これらの酸化剤のうち一種を単独で用いてもよく、二種以上を組み合わせて用いてもよい。更に、酸化剤は、例えば過酸化物やオキソ酸等の酸素供与剤と混合して用いることもできる。
研磨用組成物のpHの範囲は、1.0以上11.0未満であることが好ましく、より好ましくは2.0以上8.0未満である。研磨用組成物のpHが上記の範囲内にある場合、研磨速度が向上する。
研磨用組成物中には、必要に応じて研磨用組成物に一般に含有されている公知の添加剤等のその他成分を含有させることができる。その他成分としては、例えば、防腐剤、防黴剤、防錆剤のほか、錯化剤やエッチング剤等の研磨速度をさらに高める作用を有する添加剤、砥粒の分散性を向上させる分散剤、凝集体の再分散を容易にする分散助剤が挙げられる。
実施例1〜2及び比較例1〜8の研磨用組成物を用いて、炭化ケイ素基板の表面を表2に示す条件で研磨した。使用した炭化ケイ素基板は、Si面のオフ角0°、直径50mm(2インチ)の円形状、ビッカース硬度2200Hvのものである。そして、各研磨用組成物について研磨速度を評価した。研磨速度は、研磨前後における炭化ケイ素基板の質量差を測定し、得られた質量差を炭化ケイ素基板の密度、面積、及び研磨時間で除することにより算出した。その結果を表3の“研磨速度”欄に示す。また、算出した研磨速度に基づいて、各研磨用組成物の判定を行った。その結果を表3の“判定”欄に示す。なお、判定基準は以下のとおりである。
実施例1及び比較例4の研磨用組成物を用いて、化合物半導体基板以外の半導体基板であるサファイア基板の表面を表2に示す条件で研磨した。使用したサファイア基板は、直径50mm(2インチ)の円形状のC面基板である。そして、各研磨用組成物について、上記試験1と同様にして研磨速度を算出した。その結果を表4の“研磨速度”欄に示す。
Claims (5)
- 化合物半導体基板の研磨に用いられる研磨用組成物であって、
砥粒と水とを含有し、砥粒のうち50質量%以上が粒子径40nm以上80nm以下の粒子Aからなり、且つ砥粒のうち10質量%以上が粒子径150nm以上300nm以下の粒子Bからなることを特徴とする研磨用組成物。 - 前記砥粒は、酸化ケイ素、酸化アルミニウム、酸化ジルコニウム、酸化チタン、酸化マンガン、酸化鉄、酸化クロム及びダイヤモンドから選ばれる少なくとも1種であることを特徴とする請求項1に記載の研磨用組成物。
- 酸化剤を更に含有することを特徴とする請求項1又は2に記載の研磨用組成物。
- pH調整剤を更に含有することを特徴とする請求項1〜3のいずれか1項に記載の研磨用組成物。
- 請求項1〜4のいずれか1項に記載の研磨用組成物を用いて化合物半導体基板を研磨する研磨工程を含む化合物半導体基板の製造方法。
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