SG11201504505XA - Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device - Google Patents
Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor deviceInfo
- Publication number
- SG11201504505XA SG11201504505XA SG11201504505XA SG11201504505XA SG11201504505XA SG 11201504505X A SG11201504505X A SG 11201504505XA SG 11201504505X A SG11201504505X A SG 11201504505XA SG 11201504505X A SG11201504505X A SG 11201504505XA SG 11201504505X A SG11201504505X A SG 11201504505XA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- manufacturing
- oxide semiconductor
- film
- semiconductor film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 3
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011152143 | 2011-07-08 | ||
JP2011237087 | 2011-10-28 | ||
PCT/JP2012/004336 WO2013008419A1 (en) | 2011-07-08 | 2012-07-04 | Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201504505XA true SG11201504505XA (en) | 2015-07-30 |
Family
ID=47438096
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201600065TA SG10201600065TA (en) | 2011-07-08 | 2012-07-04 | Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device |
SG11201504505XA SG11201504505XA (en) | 2011-07-08 | 2012-07-04 | Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201600065TA SG10201600065TA (en) | 2011-07-08 | 2012-07-04 | Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US9496138B2 (en) |
JP (1) | JP6059895B2 (en) |
KR (1) | KR20140046442A (en) |
SG (2) | SG10201600065TA (en) |
TW (1) | TWI545624B (en) |
WO (1) | WO2013008419A1 (en) |
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US9202822B2 (en) * | 2010-12-17 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI584383B (en) | 2011-12-27 | 2017-05-21 | 半導體能源研究所股份有限公司 | Semiconductor device and method for manufacturing the same |
US8981370B2 (en) | 2012-03-08 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9577107B2 (en) * | 2013-03-19 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and method for forming oxide semiconductor film |
KR20140126439A (en) * | 2013-04-23 | 2014-10-31 | 삼성디스플레이 주식회사 | Method of manufacturing transparent flexible display apparatus and transparent flexible display apparatus using the method |
KR20140129770A (en) * | 2013-04-30 | 2014-11-07 | 삼성디스플레이 주식회사 | Tablet for plasma coating system, manufacturing method of the same, and manufacturing method of thin film using the same |
JP6284140B2 (en) * | 2013-06-17 | 2018-02-28 | 株式会社タムラ製作所 | Ga2O3 semiconductor device |
US9244025B2 (en) * | 2013-07-05 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Transmission electron diffraction measurement apparatus and method for measuring transmission electron diffraction pattern |
CN105849929B (en) * | 2013-12-26 | 2018-03-02 | 国立研究开发法人科学技术振兴机构 | The film of metal oxide, the organic electroluminescent device for possessing the film, solar cell and organic solar batteries |
KR102135932B1 (en) * | 2013-12-31 | 2020-07-20 | 엘지디스플레이 주식회사 | Thin film transistor array substrate for display device and method for fabricating the same |
KR102164941B1 (en) | 2014-01-13 | 2020-10-14 | 삼성디스플레이 주식회사 | Thin film transistor substrate, display apparatus including the same, and manufacturing method of the thin film transistor substrate |
JP2015176965A (en) * | 2014-03-14 | 2015-10-05 | 株式会社日本製鋼所 | Method for producing oxide-based material |
US9337030B2 (en) | 2014-03-26 | 2016-05-10 | Intermolecular, Inc. | Method to grow in-situ crystalline IGZO using co-sputtering targets |
US9976230B2 (en) * | 2014-09-19 | 2018-05-22 | Corning Incorporated | Method for forming a scratch resistant crystallized layer on a substrate and article formed therefrom |
TWI652362B (en) | 2014-10-28 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | Oxide and manufacturing method thereof |
JP6647841B2 (en) | 2014-12-01 | 2020-02-14 | 株式会社半導体エネルギー研究所 | Preparation method of oxide |
WO2016139551A1 (en) * | 2015-03-03 | 2016-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
TWI593024B (en) | 2015-07-24 | 2017-07-21 | 友達光電股份有限公司 | Method of fabricating thin film transistor |
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DE112016004928B4 (en) * | 2015-10-29 | 2020-08-06 | Mitsubishi Electric Corporation | Thin film transistor substrate |
KR102330089B1 (en) * | 2016-01-18 | 2021-12-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Metal oxide film, semiconductor device, and display device |
TWI651848B (en) | 2016-12-13 | 2019-02-21 | 友達光電股份有限公司 | Crystallization method of metal oxide semiconductor layer, semiconductor structure, active array substrate, and indium gallium zinc oxide crystal |
WO2020157589A1 (en) * | 2019-01-31 | 2020-08-06 | King Abdullah University Of Science And Technology | Semiconductor device with a group-iii oxide active layer |
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-
2012
- 2012-06-28 US US13/535,523 patent/US9496138B2/en active Active
- 2012-07-03 JP JP2012149428A patent/JP6059895B2/en not_active Expired - Fee Related
- 2012-07-04 KR KR1020147001695A patent/KR20140046442A/en not_active Application Discontinuation
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- 2012-07-04 WO PCT/JP2012/004336 patent/WO2013008419A1/en active Application Filing
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TW201318035A (en) | 2013-05-01 |
WO2013008419A1 (en) | 2013-01-17 |
SG10201600065TA (en) | 2016-02-26 |
JP2013110380A (en) | 2013-06-06 |
US9496138B2 (en) | 2016-11-15 |
JP6059895B2 (en) | 2017-01-11 |
TWI545624B (en) | 2016-08-11 |
US20130009147A1 (en) | 2013-01-10 |
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