SG11201503321XA - Fluorocarbon molecules for high aspect ratio oxide etch - Google Patents
Fluorocarbon molecules for high aspect ratio oxide etchInfo
- Publication number
- SG11201503321XA SG11201503321XA SG11201503321XA SG11201503321XA SG11201503321XA SG 11201503321X A SG11201503321X A SG 11201503321XA SG 11201503321X A SG11201503321X A SG 11201503321XA SG 11201503321X A SG11201503321X A SG 11201503321XA SG 11201503321X A SG11201503321X A SG 11201503321XA
- Authority
- SG
- Singapore
- Prior art keywords
- aspect ratio
- high aspect
- oxide etch
- ratio oxide
- fluorocarbon molecules
- Prior art date
Links
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/26—Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton
- C07C17/263—Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C19/00—Acyclic saturated compounds containing halogen atoms
- C07C19/08—Acyclic saturated compounds containing halogen atoms containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C21/00—Acyclic unsaturated compounds containing halogen atoms
- C07C21/02—Acyclic unsaturated compounds containing halogen atoms containing carbon-to-carbon double bonds
- C07C21/18—Acyclic unsaturated compounds containing halogen atoms containing carbon-to-carbon double bonds containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C23/00—Compounds containing at least one halogen atom bound to a ring other than a six-membered aromatic ring
- C07C23/02—Monocyclic halogenated hydrocarbons
- C07C23/06—Monocyclic halogenated hydrocarbons with a four-membered ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2601/00—Systems containing only non-condensed rings
- C07C2601/04—Systems containing only non-condensed rings with a four-membered ring
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Plasma Technology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261720139P | 2012-10-30 | 2012-10-30 | |
PCT/US2013/067415 WO2014070838A1 (en) | 2012-10-30 | 2013-10-30 | Fluorocarbon molecules for high aspect ratio oxide etch |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201503321XA true SG11201503321XA (en) | 2015-05-28 |
Family
ID=50628017
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201503321XA SG11201503321XA (en) | 2012-10-30 | 2013-10-30 | Fluorocarbon molecules for high aspect ratio oxide etch |
SG10201703513WA SG10201703513WA (en) | 2012-10-30 | 2013-10-30 | Fluorocarbon molecules for high aspect ratio oxide etch |
SG10202113236SA SG10202113236SA (en) | 2012-10-30 | 2013-10-30 | Fluorocarbon molecules for high aspect ratio oxide etch |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201703513WA SG10201703513WA (en) | 2012-10-30 | 2013-10-30 | Fluorocarbon molecules for high aspect ratio oxide etch |
SG10202113236SA SG10202113236SA (en) | 2012-10-30 | 2013-10-30 | Fluorocarbon molecules for high aspect ratio oxide etch |
Country Status (7)
Country | Link |
---|---|
US (3) | US9514959B2 (ja) |
JP (3) | JP6257638B2 (ja) |
KR (3) | KR102153246B1 (ja) |
CN (2) | CN107275206B (ja) |
SG (3) | SG11201503321XA (ja) |
TW (2) | TWI588240B (ja) |
WO (1) | WO2014070838A1 (ja) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
US9295148B2 (en) | 2012-12-14 | 2016-03-22 | Lam Research Corporation | Computation of statistics for statistical data decimation |
US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
US9502216B2 (en) | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
US9155182B2 (en) | 2013-01-11 | 2015-10-06 | Lam Research Corporation | Tuning a parameter associated with plasma impedance |
US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
US9779196B2 (en) | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
JP2015170763A (ja) * | 2014-03-07 | 2015-09-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US11135417B2 (en) * | 2014-04-08 | 2021-10-05 | Nipro Corporation | Medical valve |
US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
JP6360770B2 (ja) * | 2014-06-02 | 2018-07-18 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
TWI695423B (zh) | 2014-06-18 | 2020-06-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用於tsv/mems/功率元件蝕刻的化學物質 |
KR102333443B1 (ko) * | 2014-10-24 | 2021-12-02 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
CN107112233A (zh) | 2015-01-22 | 2017-08-29 | 日本瑞翁株式会社 | 等离子体蚀刻方法 |
WO2016167892A1 (en) | 2015-04-13 | 2016-10-20 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
US9728421B2 (en) * | 2015-12-31 | 2017-08-08 | International Business Machines Corporation | High aspect ratio patterning of hard mask materials by organic soft masks |
JP6861802B2 (ja) * | 2016-09-14 | 2021-04-21 | マトソン テクノロジー インコーポレイテッドMattson Technology, Inc. | 高アスペクト比構造のためのストリッププロセス |
WO2018102088A1 (en) * | 2016-11-29 | 2018-06-07 | Lam Research Corporation | Method for generating vertical profiles in organic layer etches |
WO2018106955A1 (en) | 2016-12-09 | 2018-06-14 | Asm Ip Holding B.V. | Thermal atomic layer etching processes |
US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
US10607850B2 (en) * | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
EP3608945A4 (en) | 2017-04-06 | 2020-12-23 | Kanto Denka Kogyo Co., Ltd. | DRY ETCHING GAS COMPOSITION AND DRY ETCHING PROCESS |
JP6896522B2 (ja) * | 2017-06-27 | 2021-06-30 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | エッチング方法およびプラズマエッチング用材料 |
US11075084B2 (en) | 2017-08-31 | 2021-07-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Chemistries for etching multi-stacked layers |
US10410878B2 (en) * | 2017-10-31 | 2019-09-10 | American Air Liquide, Inc. | Hydrofluorocarbons containing —NH2 functional group for 3D NAND and DRAM applications |
JP7030648B2 (ja) | 2018-08-09 | 2022-03-07 | キオクシア株式会社 | 半導体装置の製造方法およびエッチングガス |
JP7173799B2 (ja) * | 2018-09-11 | 2022-11-16 | キオクシア株式会社 | 半導体装置の製造方法およびエッチングガス |
JP6666601B2 (ja) * | 2018-11-22 | 2020-03-18 | 東京エレクトロン株式会社 | 多孔質膜をエッチングする方法 |
JP6874778B2 (ja) * | 2019-01-09 | 2021-05-19 | ダイキン工業株式会社 | シクロブタンの製造方法 |
CN113646289A (zh) * | 2019-03-27 | 2021-11-12 | 大金工业株式会社 | 卤代环烷烃化合物的制造方法 |
CN114072881B (zh) * | 2019-06-21 | 2023-12-22 | 日立能源有限公司 | 介电绝缘或消弧流体 |
JP7493378B2 (ja) * | 2019-07-05 | 2024-05-31 | 東京エレクトロン株式会社 | エッチング処理方法及び基板処理装置 |
US11688650B2 (en) * | 2019-07-05 | 2023-06-27 | Tokyo Electron Limited | Etching method and substrate processing apparatus |
JP2021019201A (ja) | 2019-07-18 | 2021-02-15 | エーエスエム アイピー ホールディング ビー.ブイ. | 半導体処理システム用シャワーヘッドデバイス |
US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
CN113035706A (zh) * | 2019-12-25 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | 一种等离子体刻蚀方法和刻蚀装置 |
KR102461689B1 (ko) * | 2020-05-04 | 2022-10-31 | 아주대학교산학협력단 | 펜타플루오로프로판올(pentafluoropropanol)을 이용한 플라즈마 식각 방법 |
KR102244862B1 (ko) * | 2020-08-04 | 2021-04-27 | (주)원익머트리얼즈 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법 |
IL302057A (en) | 2020-10-15 | 2023-06-01 | Resonac Corp | Etching gas, etching method and method for manufacturing a semiconductor element |
JPWO2022080267A1 (ja) * | 2020-10-15 | 2022-04-21 | ||
US20230374381A1 (en) * | 2020-10-15 | 2023-11-23 | Resonac Corporation | Etching gas, method for producing same, etching method, and method for producing semiconductor device |
JPWO2022080273A1 (ja) * | 2020-10-15 | 2022-04-21 | ||
US20220223431A1 (en) * | 2020-12-28 | 2022-07-14 | American Air Liquide, Inc. | High conductive passivation layers and method of forming the same during high aspect ratio plasma etching |
KR102244885B1 (ko) * | 2021-02-03 | 2021-04-27 | (주)원익머트리얼즈 | 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정 |
KR20220133019A (ko) * | 2021-03-24 | 2022-10-04 | 삼성전자주식회사 | 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법 |
CN114566431A (zh) * | 2022-02-21 | 2022-05-31 | 中船(邯郸)派瑞特种气体股份有限公司 | 一种低损伤刻蚀多孔有机硅酸盐材料的方法 |
US20240096640A1 (en) * | 2022-09-20 | 2024-03-21 | Tokyo Electron Limited | High Aspect Ratio Contact (HARC) Etch |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4711698A (en) * | 1985-07-15 | 1987-12-08 | Texas Instruments Incorporated | Silicon oxide thin film etching process |
JP2570726B2 (ja) * | 1987-03-05 | 1997-01-16 | ミノルタ株式会社 | 摩擦帯電部材 |
JP3253215B2 (ja) | 1993-03-31 | 2002-02-04 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
JPH06329826A (ja) * | 1993-05-17 | 1994-11-29 | Daikin Ind Ltd | フルオロシクロブタン化合物からなる発泡剤 |
US5935877A (en) | 1995-09-01 | 1999-08-10 | Applied Materials, Inc. | Etch process for forming contacts over titanium silicide |
US6322715B1 (en) * | 1996-10-30 | 2001-11-27 | Japan As Represented By Director General Of The Agency Of Industrial Science And Technology | Gas composition for dry etching and process of dry etching |
US6051504A (en) * | 1997-08-15 | 2000-04-18 | International Business Machines Corporation | Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma |
US6183655B1 (en) * | 1997-09-19 | 2001-02-06 | Applied Materials, Inc. | Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon |
US6228775B1 (en) | 1998-02-24 | 2001-05-08 | Micron Technology, Inc. | Plasma etching method using low ionization potential gas |
US6387287B1 (en) | 1998-03-27 | 2002-05-14 | Applied Materials, Inc. | Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window |
US6412984B2 (en) * | 1998-05-14 | 2002-07-02 | Nsk Ltd. | Dynamic pressure bearing apparatus |
US6451703B1 (en) * | 2000-03-10 | 2002-09-17 | Applied Materials, Inc. | Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas |
JP4432230B2 (ja) * | 2000-07-27 | 2010-03-17 | 日本ゼオン株式会社 | フッ素化炭化水素の精製方法、溶剤、潤滑性重合体含有液および潤滑性重合体膜を有する物品 |
US6569774B1 (en) | 2000-08-31 | 2003-05-27 | Micron Technology, Inc. | Method to eliminate striations and surface roughness caused by dry etch |
US6972265B1 (en) | 2002-04-15 | 2005-12-06 | Silicon Magnetic Systems | Metal etch process selective to metallic insulating materials |
US6897532B1 (en) | 2002-04-15 | 2005-05-24 | Cypress Semiconductor Corp. | Magnetic tunneling junction configuration and a method for making the same |
US20050014383A1 (en) | 2003-07-15 | 2005-01-20 | Bing Ji | Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas |
US6972258B2 (en) | 2003-08-04 | 2005-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for selectively controlling damascene CD bias |
JP4629421B2 (ja) * | 2004-12-06 | 2011-02-09 | パナソニック株式会社 | ドライエッチング方法及びドライエッチング装置 |
US9175201B2 (en) | 2004-12-21 | 2015-11-03 | Honeywell International Inc. | Stabilized iodocarbon compositions |
MY176664A (en) | 2004-12-21 | 2020-08-19 | Honeywell Int Inc | Stabilized iodocarbon compositions |
JP4691702B2 (ja) * | 2005-02-16 | 2011-06-01 | 独立行政法人産業技術総合研究所 | トランス−1,1,2,2,3,4−ヘキサフルオロシクロブタンの製造方法 |
US20060243944A1 (en) | 2005-03-04 | 2006-11-02 | Minor Barbara H | Compositions comprising a fluoroolefin |
JP5131436B2 (ja) * | 2007-05-31 | 2013-01-30 | 日本ゼオン株式会社 | エッチング方法 |
US7972525B2 (en) | 2007-06-06 | 2011-07-05 | E. I. Du Pont De Nemours And Company | Azeotropic and azeotrope-like compositions of E-1,1,1,4,4,4-hexafluoro-2-butene |
WO2009019219A2 (en) | 2007-08-03 | 2009-02-12 | Solvay (Société Anonyme) | Methods of using a solvent or a foam blowing agent |
US8535551B2 (en) * | 2007-09-28 | 2013-09-17 | Zeon Corporation | Plasma etching method |
JP2009093869A (ja) * | 2007-10-05 | 2009-04-30 | Sunarrow Ltd | キーシートおよびその製造方法 |
US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
EP2399892A3 (en) | 2008-03-19 | 2012-06-13 | E.I. Du Pont De Nemours And Company | Process for making 1,1,1,4,4,4-hexafluoro-2-butene |
JP5266902B2 (ja) * | 2008-06-20 | 2013-08-21 | 日本ゼオン株式会社 | 含フッ素オレフィン化合物の製造方法 |
US8440048B2 (en) * | 2009-01-28 | 2013-05-14 | Asm America, Inc. | Load lock having secondary isolation chamber |
WO2010100254A1 (en) | 2009-03-06 | 2010-09-10 | Solvay Fluor Gmbh | Use of unsaturated hydrofluorocarbons |
JP2011060958A (ja) * | 2009-09-09 | 2011-03-24 | Toshiba Corp | 半導体装置及びその製造方法 |
KR101752212B1 (ko) * | 2009-11-20 | 2017-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101790365B1 (ko) | 2009-11-20 | 2017-10-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US20110144216A1 (en) * | 2009-12-16 | 2011-06-16 | Honeywell International Inc. | Compositions and uses of cis-1,1,1,4,4,4-hexafluoro-2-butene |
KR101660488B1 (ko) | 2010-01-22 | 2016-09-28 | 삼성전자주식회사 | 3차원 반도체 장치 및 그 제조 방법 |
US8435901B2 (en) * | 2010-06-11 | 2013-05-07 | Tokyo Electron Limited | Method of selectively etching an insulation stack for a metal interconnect |
TWI523900B (zh) | 2010-07-20 | 2016-03-01 | 首威索勒希斯股份有限公司 | 氟彈性體組合物 |
RU2010147004A (ru) | 2010-11-17 | 2012-05-27 | Е.И.Дюпон де Немур энд Компани (US) | Каталитический синтез внутренних фторбутенов и внутренних фторпентенов |
JP2012174961A (ja) * | 2011-02-23 | 2012-09-10 | Toshiba Corp | 半導体記憶装置の製造方法 |
JP5682381B2 (ja) | 2011-03-09 | 2015-03-11 | 日本ゼオン株式会社 | 含ハロゲノフッ素化シクロアルカン、及び含水素フッ素化シクロアルカンの製造方法 |
US20130098396A1 (en) | 2011-10-19 | 2013-04-25 | E I Du Pont De Nemours And Company | Novel 1,1,1,4,4,5,5,6,6,6-decafluorohex-2-ene isomer mixtures and uses thereof |
US20130122712A1 (en) * | 2011-11-14 | 2013-05-16 | Jong Mun Kim | Method of etching high aspect ratio features in a dielectric layer |
CA2864802A1 (en) | 2012-02-17 | 2013-08-22 | Mark L. Robin | Azeotrope-like compositions of z-1,1,1,4,4,4-hexafluoro-2-butene and e-1,1,1,4,4,4-hexafluoro-2-butene and uses thereof |
US20160284523A1 (en) | 2013-03-28 | 2016-09-29 | The Chemours Company Fc, Llc | Hydrofluoroolefin Etching Gas Mixtures |
US9748366B2 (en) | 2013-10-03 | 2017-08-29 | Applied Materials, Inc. | Etching oxide-nitride stacks using C4F6H2 |
-
2013
- 2013-10-30 SG SG11201503321XA patent/SG11201503321XA/en unknown
- 2013-10-30 KR KR1020197034193A patent/KR102153246B1/ko active IP Right Grant
- 2013-10-30 SG SG10201703513WA patent/SG10201703513WA/en unknown
- 2013-10-30 KR KR1020147015278A patent/KR101564182B1/ko active IP Right Grant
- 2013-10-30 TW TW102139056A patent/TWI588240B/zh active
- 2013-10-30 SG SG10202113236SA patent/SG10202113236SA/en unknown
- 2013-10-30 WO PCT/US2013/067415 patent/WO2014070838A1/en active Application Filing
- 2013-10-30 KR KR1020157029992A patent/KR102048959B1/ko active IP Right Grant
- 2013-10-30 JP JP2015539935A patent/JP6257638B2/ja active Active
- 2013-10-30 TW TW106115006A patent/TWI623510B/zh active
- 2013-10-30 CN CN201710540813.3A patent/CN107275206B/zh active Active
- 2013-10-30 CN CN201380068688.0A patent/CN104885203B/zh active Active
- 2013-10-30 US US14/439,831 patent/US9514959B2/en active Active
-
2016
- 2016-09-14 US US15/264,772 patent/US10381240B2/en active Active
-
2017
- 2017-12-05 JP JP2017233163A patent/JP6527214B2/ja active Active
-
2019
- 2019-05-09 JP JP2019088964A patent/JP6811284B2/ja active Active
- 2019-07-03 US US16/502,181 patent/US11152223B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP6811284B2 (ja) | 2021-01-13 |
TWI588240B (zh) | 2017-06-21 |
TW201422780A (zh) | 2014-06-16 |
KR20140090241A (ko) | 2014-07-16 |
CN104885203B (zh) | 2017-08-01 |
JP6527214B2 (ja) | 2019-06-05 |
TWI623510B (zh) | 2018-05-11 |
CN107275206B (zh) | 2021-03-26 |
KR102048959B1 (ko) | 2019-11-27 |
JP2019195062A (ja) | 2019-11-07 |
KR102153246B1 (ko) | 2020-09-07 |
CN107275206A (zh) | 2017-10-20 |
US20190326129A1 (en) | 2019-10-24 |
US11152223B2 (en) | 2021-10-19 |
WO2014070838A1 (en) | 2014-05-08 |
JP6257638B2 (ja) | 2018-01-10 |
US20170032976A1 (en) | 2017-02-02 |
US10381240B2 (en) | 2019-08-13 |
KR101564182B1 (ko) | 2015-10-28 |
US20150294880A1 (en) | 2015-10-15 |
JP2015533029A (ja) | 2015-11-16 |
KR20190132564A (ko) | 2019-11-27 |
CN104885203A (zh) | 2015-09-02 |
KR20150122266A (ko) | 2015-10-30 |
JP2018050074A (ja) | 2018-03-29 |
SG10201703513WA (en) | 2017-06-29 |
SG10202113236SA (en) | 2021-12-30 |
US9514959B2 (en) | 2016-12-06 |
TW201730142A (zh) | 2017-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10202113236SA (en) | Fluorocarbon molecules for high aspect ratio oxide etch | |
SG10201406081QA (en) | High aspect ratio etch with combination mask | |
GB2509391B (en) | Electrical wrench | |
SG10201505466TA (en) | Etch with increased mask selectivity | |
SG11201404918YA (en) | Etching composition | |
EP2910604A4 (en) | HIGH CONSTANT DIELECTRIC FILM | |
EP2716796A4 (en) | ELECTRICAL CONTACT COMPONENT | |
SG10201403735PA (en) | Fluorocarbon based aspect-ratio independent etching | |
HUE048913T2 (hu) | Elõre rajzoló funkció kémiai szerkezetet rajzoló alkalmazásokhoz | |
EP2899739A4 (en) | MINIATURE TYPE CIRCUIT BREAKER WITH HIGH STABILITY | |
SG2013059233A (en) | Etch with mixed mode pulsing | |
EP2900987A4 (en) | POWER SUPPLY REPORT | |
EP3058626A4 (en) | Push lock electrical connector | |
EP2827363A4 (en) | ACTION COMPOSITION AND METHODS OF PROCESSING | |
TWI560948B (en) | Electrical contact | |
EP2898106A4 (en) | PLASMA-INDUCED SMOKING | |
EP2903019A4 (en) | plasma etching | |
PL2653445T3 (pl) | Sposób chemicznej redukcji tlenku grafenu | |
SG11201503933RA (en) | Substrate etching method | |
EP2871725A4 (en) | MULTIPOOL CONNECTORS | |
EP2881718A4 (en) | SPECTROMETER | |
SG2013093034A (en) | Etch process with pre-etch transient conditioning | |
HK1189993A1 (zh) | 具有多腔體的氣相蝕刻設備 | |
GB2506149B (en) | High voltage coupler | |
GB2508994B (en) | Electrical wrench |