SG11201503933RA - Substrate etching method - Google Patents
Substrate etching methodInfo
- Publication number
- SG11201503933RA SG11201503933RA SG11201503933RA SG11201503933RA SG11201503933RA SG 11201503933R A SG11201503933R A SG 11201503933RA SG 11201503933R A SG11201503933R A SG 11201503933RA SG 11201503933R A SG11201503933R A SG 11201503933RA SG 11201503933R A SG11201503933R A SG 11201503933RA
- Authority
- SG
- Singapore
- Prior art keywords
- etching method
- substrate etching
- substrate
- etching
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0112—Bosch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Geometry (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210482401.6A CN103832965B (en) | 2012-11-23 | 2012-11-23 | Substrate etching method |
PCT/CN2013/086420 WO2014079315A1 (en) | 2012-11-23 | 2013-11-01 | Substrate etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201503933RA true SG11201503933RA (en) | 2015-06-29 |
Family
ID=50775520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201503933RA SG11201503933RA (en) | 2012-11-23 | 2013-11-01 | Substrate etching method |
Country Status (7)
Country | Link |
---|---|
US (1) | US9478439B2 (en) |
EP (1) | EP2924000B1 (en) |
KR (1) | KR101735089B1 (en) |
CN (1) | CN103832965B (en) |
SG (1) | SG11201503933RA (en) |
TW (1) | TWI506692B (en) |
WO (1) | WO2014079315A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105261561B (en) * | 2014-07-16 | 2018-05-25 | 北京北方华创微电子装备有限公司 | Black silicon preparation method |
CN106548933B (en) * | 2015-09-23 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Etching process |
US9748389B1 (en) | 2016-03-25 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for semiconductor device fabrication with improved source drain epitaxy |
CN108364867B (en) * | 2018-02-28 | 2019-04-30 | 清华大学 | Deep silicon etching method |
CN113097062B (en) * | 2021-03-22 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Etching process method and device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5228949A (en) | 1991-11-07 | 1993-07-20 | Chemcut Corporation | Method and apparatus for controlled spray etching |
US6008139A (en) * | 1996-06-17 | 1999-12-28 | Applied Materials Inc. | Method of etching polycide structures |
US6299788B1 (en) * | 1999-03-29 | 2001-10-09 | Mosel Vitelic Inc. | Silicon etching process |
US7115520B2 (en) * | 2003-04-07 | 2006-10-03 | Unaxis Usa, Inc. | Method and apparatus for process control in time division multiplexed (TDM) etch process |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
FR2887073B1 (en) * | 2005-06-14 | 2007-08-10 | Alcatel Sa | METHOD FOR CONTROLLING PRESSURE IN A PROCESS CHAMBER |
CN100554514C (en) * | 2006-11-02 | 2009-10-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of apparatus and method of reaction chamber pressure control |
CN100521102C (en) * | 2006-12-14 | 2009-07-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for polysilicon etching |
CN101477096B (en) * | 2009-01-05 | 2012-11-21 | 大连理工大学 | Polymer plane nano-channel production method |
WO2011001778A1 (en) * | 2009-07-01 | 2011-01-06 | 住友精密工業株式会社 | Method for manufacturing silicon structure, device for manufacturing same, and program for manufacturing same |
CN101962773B (en) * | 2009-07-24 | 2012-12-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching method |
JP5357710B2 (en) * | 2009-11-16 | 2013-12-04 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing apparatus, and recording medium recording program |
JP5416280B2 (en) * | 2010-08-19 | 2014-02-12 | 株式会社アルバック | Dry etching method and semiconductor device manufacturing method |
CN102515089B (en) * | 2011-12-21 | 2014-10-15 | 北京大学 | MEMS integration method |
-
2012
- 2012-11-23 CN CN201210482401.6A patent/CN103832965B/en active Active
-
2013
- 2013-10-25 TW TW102138574A patent/TWI506692B/en active
- 2013-11-01 KR KR1020157016574A patent/KR101735089B1/en active IP Right Grant
- 2013-11-01 SG SG11201503933RA patent/SG11201503933RA/en unknown
- 2013-11-01 WO PCT/CN2013/086420 patent/WO2014079315A1/en active Application Filing
- 2013-11-01 EP EP13857651.7A patent/EP2924000B1/en active Active
- 2013-11-01 US US14/646,909 patent/US9478439B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR101735089B1 (en) | 2017-05-24 |
CN103832965B (en) | 2017-02-08 |
KR20150089044A (en) | 2015-08-04 |
EP2924000A4 (en) | 2016-07-06 |
TWI506692B (en) | 2015-11-01 |
CN103832965A (en) | 2014-06-04 |
EP2924000B1 (en) | 2020-06-17 |
EP2924000A1 (en) | 2015-09-30 |
US9478439B2 (en) | 2016-10-25 |
WO2014079315A1 (en) | 2014-05-30 |
TW201421578A (en) | 2014-06-01 |
US20150311091A1 (en) | 2015-10-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2978018A4 (en) | Method for manufacturing power-module substrate | |
EP2595180A4 (en) | Etching method | |
EP2966679A4 (en) | Method for manufacturing power-module substrate | |
TWI563540B (en) | Semiconductor device manufacturing method | |
GB2510468B (en) | Substrates for semiconductor devices | |
SG11201404918YA (en) | Etching composition | |
EP2782120A4 (en) | Etching method | |
EP2755229A4 (en) | Dry etching method | |
EP2698426A4 (en) | Cell-adhering light-controllable substrate | |
EP2913843A4 (en) | Semiconductor device manufacturing method | |
EP2699065A4 (en) | Circuit substrate | |
EP2755230A4 (en) | Plasma etching method | |
EP2850385A4 (en) | Substrate inspection | |
EP2927977A4 (en) | Conductive substrate and method for manufacturing same | |
EP2925089A4 (en) | Substrate for flexible devices and method for producing same | |
EP2940778A4 (en) | Sulfide-solid-electrolyte manufacturing method | |
EP2827363A4 (en) | Etching solution composition and etching method | |
SG11201601261SA (en) | Etching method | |
EP2887383A4 (en) | Soi wafer manufacturing method | |
SG11201600696PA (en) | Etching method | |
EP2916630A4 (en) | Substrate and method for producing substrate | |
EP2903019A4 (en) | Plasma etching device | |
SG11201503933RA (en) | Substrate etching method | |
GB2510248B (en) | Substrates for semiconductor devices | |
EP2763517A4 (en) | Substrate manufacturing method |