SG11201404918YA - Etching composition - Google Patents
Etching compositionInfo
- Publication number
- SG11201404918YA SG11201404918YA SG11201404918YA SG11201404918YA SG11201404918YA SG 11201404918Y A SG11201404918Y A SG 11201404918YA SG 11201404918Y A SG11201404918Y A SG 11201404918YA SG 11201404918Y A SG11201404918Y A SG 11201404918YA SG 11201404918Y A SG11201404918Y A SG 11201404918YA
- Authority
- SG
- Singapore
- Prior art keywords
- etching composition
- etching
- composition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261698830P | 2012-09-10 | 2012-09-10 | |
US13/827,861 US8709277B2 (en) | 2012-09-10 | 2013-03-14 | Etching composition |
PCT/US2013/052863 WO2014039186A1 (en) | 2012-09-10 | 2013-07-31 | Etching composition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201404918YA true SG11201404918YA (en) | 2014-09-26 |
Family
ID=50233686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201404918YA SG11201404918YA (en) | 2012-09-10 | 2013-07-31 | Etching composition |
Country Status (8)
Country | Link |
---|---|
US (1) | US8709277B2 (en) |
EP (1) | EP2807289B1 (en) |
JP (1) | JP6086982B2 (en) |
KR (1) | KR102150134B1 (en) |
CN (1) | CN104395502B (en) |
SG (1) | SG11201404918YA (en) |
TW (1) | TWI577833B (en) |
WO (1) | WO2014039186A1 (en) |
Families Citing this family (15)
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TWI577834B (en) * | 2011-10-21 | 2017-04-11 | 富士軟片電子材料美國股份有限公司 | Novel passivation composition and process |
US9680027B2 (en) * | 2012-03-07 | 2017-06-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Nickelide source/drain structures for CMOS transistors |
US20150162213A1 (en) * | 2012-05-11 | 2015-06-11 | Advanced Technology Materials, Inc. | Formulations for wet etching nipt during silicide fabrication |
WO2014124006A1 (en) | 2013-02-05 | 2014-08-14 | The Johns Hopkins University | Nanoparticles for magnetic resonance imaging tracking and methods of making and using thereof |
JP6776125B2 (en) * | 2013-12-20 | 2020-10-28 | インテグリス・インコーポレーテッド | Use of non-oxidizing strong acids for removal of ion-implanted resists |
US20160319444A1 (en) | 2013-12-20 | 2016-11-03 | Greene Lyon Group, Inc. | Method and apparatus for recovery of noble metals, including recovery of noble metals from plated and/or filled scrap |
WO2016210051A1 (en) | 2015-06-24 | 2016-12-29 | Greene Lyon Group, Inc. | Selective removal of noble metals using acidic fluids, including fluids containing nitrate ions |
JP6846351B2 (en) | 2015-01-27 | 2021-03-24 | ザ・ジョンズ・ホプキンス・ユニバーシティー | Hypotonic hydrogel formulation for enhanced transport of active agents on mucosal surfaces |
US11649558B2 (en) | 2015-03-13 | 2023-05-16 | Okuno Chemical Industries Co., Ltd. | Electrolytic stripping agent for jig |
EP3159432B1 (en) * | 2015-10-23 | 2020-08-05 | ATOTECH Deutschland GmbH | Surface treatment agent for copper and copper alloy surfaces |
CN109594079B (en) * | 2017-09-30 | 2021-02-12 | 深圳新宙邦科技股份有限公司 | Molybdenum-aluminum common etching solution and etching method |
KR102503788B1 (en) * | 2017-11-21 | 2023-02-27 | 삼성디스플레이 주식회사 | Etchant and manufacturing method of display device using the same |
US10858544B2 (en) * | 2018-05-24 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical mechanical polishing slurry and chemical mechanical polishing process using the same |
KR20220159054A (en) * | 2021-05-25 | 2022-12-02 | 주식회사 이엔에프테크놀로지 | Etching composition |
KR20220160796A (en) * | 2021-05-28 | 2022-12-06 | 주식회사 이엔에프테크놀로지 | Etching composition |
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KR101938022B1 (en) * | 2011-03-11 | 2019-01-11 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | Novel etching composition |
-
2013
- 2013-03-14 US US13/827,861 patent/US8709277B2/en active Active
- 2013-07-31 CN CN201380016216.0A patent/CN104395502B/en active Active
- 2013-07-31 EP EP13834612.7A patent/EP2807289B1/en active Active
- 2013-07-31 JP JP2015531084A patent/JP6086982B2/en active Active
- 2013-07-31 WO PCT/US2013/052863 patent/WO2014039186A1/en active Application Filing
- 2013-07-31 KR KR1020147028194A patent/KR102150134B1/en active IP Right Grant
- 2013-07-31 SG SG11201404918YA patent/SG11201404918YA/en unknown
- 2013-08-06 TW TW102128083A patent/TWI577833B/en active
Also Published As
Publication number | Publication date |
---|---|
KR20150054708A (en) | 2015-05-20 |
US8709277B2 (en) | 2014-04-29 |
EP2807289A1 (en) | 2014-12-03 |
KR102150134B1 (en) | 2020-09-01 |
CN104395502B (en) | 2017-08-08 |
EP2807289B1 (en) | 2016-09-21 |
TWI577833B (en) | 2017-04-11 |
CN104395502A (en) | 2015-03-04 |
TW201413057A (en) | 2014-04-01 |
EP2807289A4 (en) | 2015-10-28 |
US20140073140A1 (en) | 2014-03-13 |
JP6086982B2 (en) | 2017-03-01 |
WO2014039186A1 (en) | 2014-03-13 |
JP2015529981A (en) | 2015-10-08 |
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