HK1189993A1 - 具有多腔體的氣相蝕刻設備 - Google Patents

具有多腔體的氣相蝕刻設備

Info

Publication number
HK1189993A1
HK1189993A1 HK14103085.4A HK14103085A HK1189993A1 HK 1189993 A1 HK1189993 A1 HK 1189993A1 HK 14103085 A HK14103085 A HK 14103085A HK 1189993 A1 HK1189993 A1 HK 1189993A1
Authority
HK
Hong Kong
Prior art keywords
etching apparatus
multiple chambers
vapor etching
vapor
chambers
Prior art date
Application number
HK14103085.4A
Other languages
English (en)
Inventor
陳亞理
Original Assignee
晶呈科技股份有限公司 樓之
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶呈科技股份有限公司 樓之 filed Critical 晶呈科技股份有限公司 樓之
Publication of HK1189993A1 publication Critical patent/HK1189993A1/zh

Links

HK14103085.4A 2012-08-17 2014-03-31 具有多腔體的氣相蝕刻設備 HK1189993A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210295616.7A CN103594314B (zh) 2012-08-17 2012-08-17 具有多腔体的气相蚀刻设备

Publications (1)

Publication Number Publication Date
HK1189993A1 true HK1189993A1 (zh) 2014-06-20

Family

ID=50084408

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14103085.4A HK1189993A1 (zh) 2012-08-17 2014-03-31 具有多腔體的氣相蝕刻設備

Country Status (2)

Country Link
CN (1) CN103594314B (zh)
HK (1) HK1189993A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3038169A1 (en) * 2014-12-22 2016-06-29 Solvay SA Process for the manufacture of solar cells
CN111668086B (zh) * 2020-07-14 2023-04-14 北京北方华创微电子装备有限公司 半导体设备及其供气控制方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105483A (en) * 1980-01-25 1981-08-21 Mitsubishi Electric Corp Dry etching device
US7189332B2 (en) * 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
CN100369192C (zh) * 2005-12-26 2008-02-13 北京北方微电子基地设备工艺研究中心有限责任公司 半导体加工系统反应腔室
CN100587904C (zh) * 2006-12-11 2010-02-03 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室内衬及包含该内衬的反应腔室
CN202712119U (zh) * 2012-08-17 2013-01-30 晶呈科技股份有限公司 具有多腔体的气相蚀刻设备

Also Published As

Publication number Publication date
CN103594314B (zh) 2015-11-18
CN103594314A (zh) 2014-02-19

Similar Documents

Publication Publication Date Title
EP3036248A4 (en) Nucleotide analogs
GB201213832D0 (en) Cathode
EP2864571A4 (en) HIGH TEMPERATURE SUPERCONDENSOR
IL230680A0 (en) A two-cell device
HK1208677A1 (zh) 具有咪唑-聯苯-咪唑核心之抗病毒化合物
SG11201404480TA (en) Hydrophilizing plasma coating
EP2910604A4 (en) HIGH CONSTANT DIELECTRIC FILM
GB201203699D0 (en) Multiple gas sensor
GB201202698D0 (en) Gas transfer vacuum pump
SG11201408802RA (en) Chambers with improved cooling devices
GB2498820B (en) Condensers
GB201207997D0 (en) Process
SG11201500381TA (en) Process
EP2892307A4 (en) PLASMA GENERATING DEVICE
SG11201504014TA (en) Physical vapor deposition apparatus
EP2898106A4 (en) PLASMA-INDUCED SMOKING
EP2921571A4 (en) VACUUM STEAM SEPARATION DEVICE
EP2903019A4 (en) plasma etching
SG11201502333VA (en) Substrate orienter chamber
EP2850214A4 (en) PURGE CAP
GB201205237D0 (en) Adjuvant
EP2881718A4 (en) SPECTROMETER
EP2824698A4 (en) SUSCEPTOR
EP2803080A4 (en) susceptor
AP00445S1 (en) Substrate

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200813