HK1189993A1 - 具有多腔體的氣相蝕刻設備 - Google Patents

具有多腔體的氣相蝕刻設備

Info

Publication number
HK1189993A1
HK1189993A1 HK14103085.4A HK14103085A HK1189993A1 HK 1189993 A1 HK1189993 A1 HK 1189993A1 HK 14103085 A HK14103085 A HK 14103085A HK 1189993 A1 HK1189993 A1 HK 1189993A1
Authority
HK
Hong Kong
Prior art keywords
etching apparatus
multiple chambers
vapor etching
vapor
chambers
Prior art date
Application number
HK14103085.4A
Other languages
English (en)
Inventor
陳亞理
Original Assignee
晶呈科技股份有限公司 樓之
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶呈科技股份有限公司 樓之 filed Critical 晶呈科技股份有限公司 樓之
Publication of HK1189993A1 publication Critical patent/HK1189993A1/zh

Links

HK14103085.4A 2012-08-17 2014-03-31 具有多腔體的氣相蝕刻設備 HK1189993A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210295616.7A CN103594314B (zh) 2012-08-17 2012-08-17 具有多腔体的气相蚀刻设备

Publications (1)

Publication Number Publication Date
HK1189993A1 true HK1189993A1 (zh) 2014-06-20

Family

ID=50084408

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14103085.4A HK1189993A1 (zh) 2012-08-17 2014-03-31 具有多腔體的氣相蝕刻設備

Country Status (2)

Country Link
CN (1) CN103594314B (zh)
HK (1) HK1189993A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3038169A1 (en) * 2014-12-22 2016-06-29 Solvay SA Process for the manufacture of solar cells
CN111668086B (zh) * 2020-07-14 2023-04-14 北京北方华创微电子装备有限公司 半导体设备及其供气控制方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105483A (en) * 1980-01-25 1981-08-21 Mitsubishi Electric Corp Dry etching device
US7189332B2 (en) * 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
CN100369192C (zh) * 2005-12-26 2008-02-13 北京北方微电子基地设备工艺研究中心有限责任公司 半导体加工系统反应腔室
CN100587904C (zh) * 2006-12-11 2010-02-03 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室内衬及包含该内衬的反应腔室
CN202712119U (zh) * 2012-08-17 2013-01-30 晶呈科技股份有限公司 具有多腔体的气相蚀刻设备

Also Published As

Publication number Publication date
CN103594314B (zh) 2015-11-18
CN103594314A (zh) 2014-02-19

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200813