SG11201408802RA - Chambers with improved cooling devices - Google Patents

Chambers with improved cooling devices

Info

Publication number
SG11201408802RA
SG11201408802RA SG11201408802RA SG11201408802RA SG11201408802RA SG 11201408802R A SG11201408802R A SG 11201408802RA SG 11201408802R A SG11201408802R A SG 11201408802RA SG 11201408802R A SG11201408802R A SG 11201408802RA SG 11201408802R A SG11201408802R A SG 11201408802RA
Authority
SG
Singapore
Prior art keywords
chambers
cooling devices
improved cooling
improved
devices
Prior art date
Application number
SG11201408802RA
Inventor
Joseph M Ranish
Aaron Muir Hunter
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201408802RA publication Critical patent/SG11201408802RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B29/00—Combined heating and refrigeration systems, e.g. operating alternately or simultaneously
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201408802RA 2012-07-26 2013-06-26 Chambers with improved cooling devices SG11201408802RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261675951P 2012-07-26 2012-07-26
US13/787,960 US8901518B2 (en) 2012-07-26 2013-03-07 Chambers with improved cooling devices
PCT/US2013/047970 WO2014018212A1 (en) 2012-07-26 2013-06-26 Chambers with improved cooling devices

Publications (1)

Publication Number Publication Date
SG11201408802RA true SG11201408802RA (en) 2015-02-27

Family

ID=49993732

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201408802RA SG11201408802RA (en) 2012-07-26 2013-06-26 Chambers with improved cooling devices

Country Status (6)

Country Link
US (1) US8901518B2 (en)
KR (1) KR101569327B1 (en)
CN (1) CN104471673B (en)
SG (1) SG11201408802RA (en)
TW (1) TWI525704B (en)
WO (1) WO2014018212A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101503117B1 (en) * 2012-08-31 2015-03-16 엘지디스플레이 주식회사 Curing apparatus
JP2014192372A (en) * 2013-03-27 2014-10-06 Tokyo Electron Ltd Microwave heating apparatus
US10410890B2 (en) * 2013-06-21 2019-09-10 Applied Materials, Inc. Light pipe window structure for thermal chamber applications and processes
US10699922B2 (en) 2014-07-25 2020-06-30 Applied Materials, Inc. Light pipe arrays for thermal chamber applications and thermal processes
FR3050978B1 (en) * 2016-05-03 2019-09-06 Dassault Aviation DEVICE FOR SUPPORTING RADIOELECTRIC EQUIPMENT OF AN AIRCRAFT, RADIOELECTRIC SYSTEM AND AIRCRAFT
US20180366354A1 (en) * 2017-06-19 2018-12-20 Applied Materials, Inc. In-situ semiconductor processing chamber temperature apparatus
US11538666B2 (en) 2017-11-15 2022-12-27 Lam Research Corporation Multi-zone cooling of plasma heated window
WO2020112764A1 (en) * 2018-11-28 2020-06-04 Lam Research Corporation Pedestal including vapor chamber for substrate processing systems
EP3982398A1 (en) * 2020-10-06 2022-04-13 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Controlled local heating of substrates
CN115161764B (en) * 2022-06-23 2024-02-06 江苏天芯微半导体设备有限公司 Temperature control device and epitaxial equipment thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
JPH0917770A (en) * 1995-06-28 1997-01-17 Sony Corp Plasma treatment method and plasma apparatus used for it
US5536322A (en) 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including a heated and cooled support platen and an electrostatic clamping device
US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
KR100317829B1 (en) 1999-03-05 2001-12-22 윤종용 Thermoelectric-cooling temperature control apparatus for semiconductor manufacturing process facilities
JP4209057B2 (en) 1999-12-01 2009-01-14 東京エレクトロン株式会社 Ceramic heater, substrate processing apparatus and substrate processing method using the same
US6679318B2 (en) 2002-01-19 2004-01-20 Allan P Bakke Light weight rigid flat heat pipe utilizing copper foil container laminated to heat treated aluminum plates for structural stability
US7049612B2 (en) 2004-03-02 2006-05-23 Applied Materials Electron beam treatment apparatus
CN101478882B (en) * 2006-06-26 2013-07-10 Tp太阳能公司 Rapid thermal firing ir conveyor furnace having high intensity heating section
US7805064B2 (en) * 2006-06-26 2010-09-28 TP Solar, Inc. (Corporation of CA, USA) Rapid thermal firing IR conveyor furnace having high intensity heating section
US8222574B2 (en) * 2007-01-15 2012-07-17 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
US8314368B2 (en) * 2008-02-22 2012-11-20 Applied Materials, Inc. Silver reflectors for semiconductor processing chambers
JP2009277868A (en) * 2008-05-14 2009-11-26 Sumitomo Electric Ind Ltd Heating device and method of manufacturing semiconductor substrate
US8294068B2 (en) * 2008-09-10 2012-10-23 Applied Materials, Inc. Rapid thermal processing lamphead with improved cooling
US9155134B2 (en) 2008-10-17 2015-10-06 Applied Materials, Inc. Methods and apparatus for rapidly responsive heat control in plasma processing devices

Also Published As

Publication number Publication date
TW201407686A (en) 2014-02-16
KR20150039788A (en) 2015-04-13
TWI525704B (en) 2016-03-11
US20140027092A1 (en) 2014-01-30
US8901518B2 (en) 2014-12-02
WO2014018212A1 (en) 2014-01-30
CN104471673B (en) 2017-08-25
KR101569327B1 (en) 2015-11-13
CN104471673A (en) 2015-03-25

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