SG10202103395QA - Mask blank, method for producing transfer mask and method for producing semiconductor device - Google Patents

Mask blank, method for producing transfer mask and method for producing semiconductor device

Info

Publication number
SG10202103395QA
SG10202103395QA SG10202103395QA SG10202103395QA SG10202103395QA SG 10202103395Q A SG10202103395Q A SG 10202103395QA SG 10202103395Q A SG10202103395Q A SG 10202103395QA SG 10202103395Q A SG10202103395Q A SG 10202103395QA SG 10202103395Q A SG10202103395Q A SG 10202103395QA
Authority
SG
Singapore
Prior art keywords
producing
mask
semiconductor device
mask blank
transfer mask
Prior art date
Application number
SG10202103395QA
Other languages
English (en)
Inventor
Masahiro Hashimoto
Hiroaki Shishido
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG10202103395QA publication Critical patent/SG10202103395QA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
SG10202103395QA 2017-06-14 2018-05-16 Mask blank, method for producing transfer mask and method for producing semiconductor device SG10202103395QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017116510 2017-06-14

Publications (1)

Publication Number Publication Date
SG10202103395QA true SG10202103395QA (en) 2021-05-28

Family

ID=64660555

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201912030PA SG11201912030PA (en) 2017-06-14 2018-05-16 Mask blank, phase shift mask and method for manufacturing semiconductor device
SG10202103395QA SG10202103395QA (en) 2017-06-14 2018-05-16 Mask blank, method for producing transfer mask and method for producing semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201912030PA SG11201912030PA (en) 2017-06-14 2018-05-16 Mask blank, phase shift mask and method for manufacturing semiconductor device

Country Status (7)

Country Link
US (2) US11048160B2 (zh)
JP (2) JP6506449B2 (zh)
KR (1) KR102592274B1 (zh)
CN (1) CN110770652B (zh)
SG (2) SG11201912030PA (zh)
TW (2) TWI744533B (zh)
WO (1) WO2018230233A1 (zh)

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JP7303077B2 (ja) * 2019-09-10 2023-07-04 アルバック成膜株式会社 マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク
TWI707195B (zh) * 2020-02-14 2020-10-11 力晶積成電子製造股份有限公司 相位轉移光罩的製造方法
JP7354032B2 (ja) * 2020-03-19 2023-10-02 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
CN112666789B (zh) * 2020-12-02 2024-05-24 湖南普照信息材料有限公司 一种衰减型高均匀的相移光掩膜坯料及其制备方法
JP7375065B2 (ja) * 2022-02-24 2023-11-07 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び表示装置の製造方法

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JP3445329B2 (ja) 1993-11-02 2003-09-08 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク
KR101511926B1 (ko) 2003-04-09 2015-04-13 호야 가부시키가이샤 포토 마스크의 제조방법 및 포토 마스크 블랭크
JP4405443B2 (ja) 2004-10-22 2010-01-27 信越化学工業株式会社 フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
TWI375114B (en) 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
DE602006021102D1 (de) * 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomaskenrohling, Photomaske und deren Herstellungsverfahren
JP4764214B2 (ja) 2006-03-10 2011-08-31 凸版印刷株式会社 ハーフトーン型位相シフトマスク及びその製造方法
JP4509050B2 (ja) 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
KR100972860B1 (ko) 2007-09-18 2010-07-28 주식회사 하이닉스반도체 포토마스크의 제조 방법
JP2009265508A (ja) * 2008-04-28 2009-11-12 Sharp Corp フォトマスク、フォトマスクの修正方法、レジストパターン形状の修正方法、フォトマスクの製造方法及び露光転写方法
JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
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JP6229466B2 (ja) 2013-12-06 2017-11-15 信越化学工業株式会社 フォトマスクブランク
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JP5779290B1 (ja) * 2014-03-28 2015-09-16 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法
JP6544943B2 (ja) * 2014-03-28 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法
JP6292581B2 (ja) * 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
JP6150299B2 (ja) * 2014-03-30 2017-06-21 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
JP6104852B2 (ja) * 2014-07-14 2017-03-29 Hoya株式会社 マスクブランクの製造方法、位相シフトマスクの製造方法および半導体デバイスの製造方法
KR102261621B1 (ko) * 2014-12-26 2021-06-04 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6477159B2 (ja) 2015-03-31 2019-03-06 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクス及びハーフトーン位相シフトマスクブランクスの製造方法
JP6544964B2 (ja) * 2015-03-31 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
JP6087401B2 (ja) * 2015-08-14 2017-03-01 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
TWI684822B (zh) 2015-09-30 2020-02-11 日商Ｈｏｙａ股份有限公司 空白遮罩、相位移轉遮罩及半導體元件之製造方法
JP6271780B2 (ja) 2017-02-01 2018-01-31 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Also Published As

Publication number Publication date
TW202205006A (zh) 2022-02-01
JP2019003178A (ja) 2019-01-10
KR102592274B1 (ko) 2023-10-23
CN110770652B (zh) 2023-03-21
US20210286254A1 (en) 2021-09-16
JP2019133178A (ja) 2019-08-08
TWI744533B (zh) 2021-11-01
KR20200017399A (ko) 2020-02-18
JP7029423B2 (ja) 2022-03-03
SG11201912030PA (en) 2020-01-30
TW201921090A (zh) 2019-06-01
TWI784733B (zh) 2022-11-21
JP6506449B2 (ja) 2019-04-24
CN110770652A (zh) 2020-02-07
US11048160B2 (en) 2021-06-29
US20210149293A1 (en) 2021-05-20
WO2018230233A1 (ja) 2018-12-20

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