SG10201502437TA - Method to etch non-volatile metal materials - Google Patents

Method to etch non-volatile metal materials

Info

Publication number
SG10201502437TA
SG10201502437TA SG10201502437TA SG10201502437TA SG10201502437TA SG 10201502437T A SG10201502437T A SG 10201502437TA SG 10201502437T A SG10201502437T A SG 10201502437TA SG 10201502437T A SG10201502437T A SG 10201502437TA SG 10201502437T A SG10201502437T A SG 10201502437TA
Authority
SG
Singapore
Prior art keywords
metal materials
volatile metal
etch non
etch
volatile
Prior art date
Application number
SG10201502437TA
Other languages
English (en)
Inventor
Meihua Shen
Harmeet Singh
Samantha S H Tan
Jeffrey Marks
Thorsten Lill
Richard P Janek
Wenbing Yang
Prithu Sharma
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201502437TA publication Critical patent/SG10201502437TA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
SG10201502437TA 2014-03-27 2015-03-27 Method to etch non-volatile metal materials SG10201502437TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461971032P 2014-03-27 2014-03-27
US14/325,911 US9130158B1 (en) 2014-03-27 2014-07-08 Method to etch non-volatile metal materials

Publications (1)

Publication Number Publication Date
SG10201502437TA true SG10201502437TA (en) 2015-10-29

Family

ID=54012662

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201502437TA SG10201502437TA (en) 2014-03-27 2015-03-27 Method to etch non-volatile metal materials
SG10201502438RA SG10201502438RA (en) 2014-03-27 2015-03-27 Method to etch non-volatile metal materials

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201502438RA SG10201502438RA (en) 2014-03-27 2015-03-27 Method to etch non-volatile metal materials

Country Status (6)

Country Link
US (3) US9257638B2 (enrdf_load_stackoverflow)
JP (2) JP6789614B2 (enrdf_load_stackoverflow)
KR (2) KR102377668B1 (enrdf_load_stackoverflow)
CN (2) CN108682737A (enrdf_load_stackoverflow)
SG (2) SG10201502437TA (enrdf_load_stackoverflow)
TW (2) TWI651773B (enrdf_load_stackoverflow)

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Also Published As

Publication number Publication date
KR102377668B1 (ko) 2022-03-22
KR102318520B1 (ko) 2021-10-28
JP6557490B2 (ja) 2019-08-07
TWI651773B (zh) 2019-02-21
US20150340603A1 (en) 2015-11-26
TW201608748A (zh) 2016-03-01
TWI650886B (zh) 2019-02-11
CN104953027B (zh) 2018-05-22
US9130158B1 (en) 2015-09-08
JP6789614B2 (ja) 2020-11-25
US9257638B2 (en) 2016-02-09
JP2015192150A (ja) 2015-11-02
TW201603135A (zh) 2016-01-16
KR20150112757A (ko) 2015-10-07
SG10201502438RA (en) 2015-10-29
US20150280113A1 (en) 2015-10-01
CN108682737A (zh) 2018-10-19
JP2015216360A (ja) 2015-12-03
US20150280114A1 (en) 2015-10-01
CN104953027A (zh) 2015-09-30
KR20150112896A (ko) 2015-10-07
US9391267B2 (en) 2016-07-12

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