SE8403834D0 - Kemisk angavsettning av titannitrid och liknande filmer - Google Patents

Kemisk angavsettning av titannitrid och liknande filmer

Info

Publication number
SE8403834D0
SE8403834D0 SE8403834A SE8403834A SE8403834D0 SE 8403834 D0 SE8403834 D0 SE 8403834D0 SE 8403834 A SE8403834 A SE 8403834A SE 8403834 A SE8403834 A SE 8403834A SE 8403834 D0 SE8403834 D0 SE 8403834D0
Authority
SE
Sweden
Prior art keywords
nitrid
titan
statement
chemical
similar movies
Prior art date
Application number
SE8403834A
Other languages
English (en)
Other versions
SE8403834L (sv
SE453491B (sv
Inventor
Roy Gerald Gordon
Original Assignee
Roy Gerald Gordon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roy Gerald Gordon filed Critical Roy Gerald Gordon
Publication of SE8403834L publication Critical patent/SE8403834L/sv
Publication of SE8403834D0 publication Critical patent/SE8403834D0/sv
Publication of SE453491B publication Critical patent/SE453491B/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/225—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/281—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Ceramic Products (AREA)
SE8403834A 1982-11-22 1984-07-23 Forfarande for avsettning av en transparent, solstralningsreglerande film bestaende huvudsakligen av titannitrid pa ett transparent upphettat bandformigt glassubstrat SE453491B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44334082A 1982-11-22 1982-11-22

Publications (3)

Publication Number Publication Date
SE8403834L SE8403834L (sv) 1984-07-23
SE8403834D0 true SE8403834D0 (sv) 1984-07-23
SE453491B SE453491B (sv) 1988-02-08

Family

ID=23760404

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8403834A SE453491B (sv) 1982-11-22 1984-07-23 Forfarande for avsettning av en transparent, solstralningsreglerande film bestaende huvudsakligen av titannitrid pa ett transparent upphettat bandformigt glassubstrat

Country Status (13)

Country Link
US (3) US4524718A (sv)
EP (1) EP0128169B1 (sv)
AU (1) AU565957B2 (sv)
CA (1) CA1222912A (sv)
CH (1) CH662808A5 (sv)
DE (1) DE3390341T1 (sv)
DK (1) DK162938C (sv)
ES (1) ES8500874A1 (sv)
GB (1) GB2141444B (sv)
IT (1) IT1203683B (sv)
MX (1) MX160808A (sv)
SE (1) SE453491B (sv)
WO (1) WO1984002128A1 (sv)

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JP2637804B2 (ja) * 1988-12-20 1997-08-06 日本碍子株式会社 メッキ付き基材
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DE4117258A1 (de) * 1989-12-19 1992-12-03 Leybold Ag Optisch wirkende schicht fuer substrate, die insbesondere eine hohe antireflexwirkung aufweist
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US5407733A (en) * 1990-08-10 1995-04-18 Viratec Thin Films, Inc. Electrically-conductive, light-attenuating antireflection coating
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US5378501A (en) * 1993-10-05 1995-01-03 Foster; Robert F. Method for chemical vapor deposition of titanium nitride films at low temperatures
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
AU1745695A (en) * 1994-06-03 1996-01-04 Materials Research Corporation A method of nitridization of titanium thin films
AU4001395A (en) * 1994-10-11 1996-05-06 Gelest, Inc. Conformal titanium-based films and method for their preparation
US5656338A (en) * 1994-12-13 1997-08-12 Gordon; Roy G. Liquid solution of TiBr4 in Br2 used as a precursor for the chemical vapor deposition of titanium or titanium nitride
US5691044A (en) * 1994-12-13 1997-11-25 Asahi Glass Company, Ltd. Light absorptive antireflector
US6231999B1 (en) * 1996-06-21 2001-05-15 Cardinal Ig Company Heat temperable transparent coated glass article
US5968594A (en) * 1996-06-28 1999-10-19 Lam Research Corporation Direct liquid injection of liquid ammonia solutions in chemical vapor deposition
US5980977A (en) * 1996-12-09 1999-11-09 Pinnacle Research Institute, Inc. Method of producing high surface area metal oxynitrides as substrates in electrical energy storage
US5989652A (en) * 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
FR2766817B1 (fr) * 1997-07-31 1999-08-27 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche reflechissante et son procede d'obtention
WO2000047404A1 (en) * 1999-02-12 2000-08-17 Gelest, Inc. Chemical vapor deposition of tungsten nitride
US6265311B1 (en) 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
US6413860B1 (en) 1999-04-27 2002-07-02 Tokyo Electron Limited PECVD of Ta films from tanatalum halide precursors
US6410432B1 (en) 1999-04-27 2002-06-25 Tokyo Electron Limited CVD of integrated Ta and TaNx films from tantalum halide precursors
US6268288B1 (en) 1999-04-27 2001-07-31 Tokyo Electron Limited Plasma treated thermal CVD of TaN films from tantalum halide precursors
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US6854487B2 (en) * 2003-06-26 2005-02-15 General Electric Company Fluid conduit wall inhibiting heat transfer and method for making
WO2005073428A1 (en) * 2004-01-23 2005-08-11 Arkema Inc. Method of depositing film stacks on a substrate
US7966969B2 (en) 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
KR100681274B1 (ko) 2004-11-25 2007-02-09 삼성전자주식회사 커패시터 및 그 제조 방법
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7629256B2 (en) * 2007-05-14 2009-12-08 Asm International N.V. In situ silicon and titanium nitride deposition
JP5062144B2 (ja) * 2008-11-10 2012-10-31 東京エレクトロン株式会社 ガスインジェクター
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
CA2803928C (en) 2010-06-22 2018-05-01 Line Travel Automated Coating Inc. Plural component coating application system with a compressed gas flushing system and spray tip flip mechanism
RU2534150C2 (ru) * 2012-05-22 2014-11-27 Николай Евгеньевич Староверов Способ получения нитридной наноплёнки или нанонити
US10139520B2 (en) * 2015-01-30 2018-11-27 Cpfilms Inc. Method of using a heat-treated titanium nitride film
JP6851173B2 (ja) * 2016-10-21 2021-03-31 東京エレクトロン株式会社 成膜装置および成膜方法

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Also Published As

Publication number Publication date
SE8403834L (sv) 1984-07-23
GB2141444A (en) 1984-12-19
DK162938B (da) 1991-12-30
EP0128169B1 (en) 1990-07-11
DK353284D0 (da) 1984-07-19
DK353284A (da) 1984-07-19
US4535000A (en) 1985-08-13
DK162938C (da) 1992-05-25
GB2141444B (en) 1986-06-11
DE3390341C2 (sv) 1992-10-22
AU565957B2 (en) 1987-10-01
DE3390341T1 (de) 1985-01-10
EP0128169A4 (en) 1985-08-27
GB8417560D0 (en) 1984-08-15
AU2269883A (en) 1984-06-18
US4585674A (en) 1986-04-29
EP0128169A1 (en) 1984-12-19
CA1222912A (en) 1987-06-16
IT8368218A0 (it) 1983-11-21
ES527422A0 (es) 1984-11-01
ES8500874A1 (es) 1984-11-01
SE453491B (sv) 1988-02-08
CH662808A5 (fr) 1987-10-30
US4524718A (en) 1985-06-25
WO1984002128A1 (en) 1984-06-07
IT1203683B (it) 1989-02-15
MX160808A (es) 1990-05-25

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