SE7903031L - Forfarande for framstellning av metallnitridpulver - Google Patents

Forfarande for framstellning av metallnitridpulver

Info

Publication number
SE7903031L
SE7903031L SE7903031A SE7903031A SE7903031L SE 7903031 L SE7903031 L SE 7903031L SE 7903031 A SE7903031 A SE 7903031A SE 7903031 A SE7903031 A SE 7903031A SE 7903031 L SE7903031 L SE 7903031L
Authority
SE
Sweden
Prior art keywords
liquid ammonia
reaction
nitrid
powder
procedure
Prior art date
Application number
SE7903031A
Other languages
English (en)
Other versions
SE438146B (sv
Inventor
T Iwai
T Kawahito
T Yamada
Original Assignee
Ube Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries filed Critical Ube Industries
Publication of SE7903031L publication Critical patent/SE7903031L/sv
Publication of SE438146B publication Critical patent/SE438146B/sv

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
    • C01B21/0617—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with vanadium, niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0635—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with germanium, tin or lead
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C01B21/0643—Preparation from boron halides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
    • C01B21/0763—Preparation from titanium, zirconium or hafnium halides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Ceramic Products (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SE7903031A 1978-05-08 1979-04-05 Forfarande for framstellning av metallnitridpulver SE438146B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5371378A JPS54145400A (en) 1978-05-08 1978-05-08 Production of metal nitride powder

Publications (2)

Publication Number Publication Date
SE7903031L true SE7903031L (sv) 1979-11-09
SE438146B SE438146B (sv) 1985-04-01

Family

ID=12950464

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7903031A SE438146B (sv) 1978-05-08 1979-04-05 Forfarande for framstellning av metallnitridpulver

Country Status (6)

Country Link
US (1) US4196178A (sv)
JP (1) JPS54145400A (sv)
DE (1) DE2915023C2 (sv)
FR (1) FR2425291A1 (sv)
GB (1) GB2020264B (sv)
SE (1) SE438146B (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116119627A (zh) * 2023-02-08 2023-05-16 华瓷聚力(厦门)新材料有限公司 一种高α相氮化硅粉末合成方法

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321163A (en) * 1978-11-21 1982-03-23 Max-Planck-Gesellschaft Lithium nitride of increased conductivity, method for its preparation, and its use
JPS5595605A (en) * 1979-01-10 1980-07-21 Toyo Soda Mfg Co Ltd High purity silicon nitride and production thereof
JPS589764B2 (ja) * 1980-04-18 1983-02-22 宇部興産株式会社 金属炭窒化物の製法
JPS593925B2 (ja) * 1980-06-20 1984-01-26 宇部興産株式会社 金属炭窒化物の製法
US4396587A (en) * 1980-08-29 1983-08-02 Asahi-Dow Limited Method for manufacture of silicon nitride
US5445776A (en) * 1980-10-20 1995-08-29 Kabushiki Kaisha Kobe Seiko Sho Method for producing high density sintered silicon nitride (Si3 N.sub.4
DE3141590C2 (de) * 1980-10-20 1985-01-03 Kobe Steel, Ltd., Kobe, Hyogo Verfahren zur Herstellung von hochdichtem gesintertem Siliziumnitrid
JPS57175711A (en) * 1981-04-21 1982-10-28 Asahi Glass Co Ltd Synthesis of silicon nitride
US4851206A (en) * 1981-07-15 1989-07-25 The Board Of Trustees Of The Leland Stanford Junior University, Stanford University Methods and compostions involving high specific surface area carbides and nitrides
JPS5815013A (ja) * 1981-07-21 1983-01-28 Asahi Glass Co Ltd 珪素の窒化物の合成方法
JPS5888110A (ja) * 1981-11-17 1983-05-26 Ube Ind Ltd 窒化ケイ素質粉末の製法
JPS5891018A (ja) * 1981-11-26 1983-05-30 Denki Kagaku Kogyo Kk 窒化物微粉末の製造方法
JPS5921506A (ja) * 1982-07-27 1984-02-03 Ube Ind Ltd 結晶質窒化ケイ素粉末の製法
JPS60145903A (ja) * 1983-12-29 1985-08-01 Toa Nenryo Kogyo Kk 無機ポリシラザン及びその合成方法
DE3578581D1 (de) * 1985-12-09 1990-08-09 Toa Nenryo Kogyo Kk Verfahren zur herstellung von siliciumimid und dessen weiterberarbeitung zu siliciumnitrid.
US4686095A (en) * 1985-12-23 1987-08-11 Ford Motor Company Method of making ultrapure silicon nitride precursor
US4800183A (en) * 1986-04-09 1989-01-24 The United States Of America As Represented By The United States Department Of Energy Method for producing refractory nitrides
US4732746A (en) * 1986-04-18 1988-03-22 Ford Motor Company Method of making high purity silicon nitride precursor
US4746501A (en) * 1986-12-09 1988-05-24 United States Department Of Energy Process for preparing transition metal nitrides and transition metal carbonitrides and their reaction intermediates
US5023213A (en) * 1986-12-09 1991-06-11 United States Department Of Energy Precursors in the preparation of transition metal nitrides and transition metal carbonitrides and their reaction intermediates
DE3717284A1 (de) * 1987-05-22 1988-12-01 Basf Ag Verfahren zur herstellung von pulverfoermigem siliciumnitrid
DE3720572A1 (de) * 1987-06-22 1989-01-05 Basf Ag Amorphes pulverfoermiges siliciumnitrid
US4929433A (en) * 1987-10-22 1990-05-29 Alfred University Method for the preparation of sinterable nitrides
US4914063A (en) * 1988-04-04 1990-04-03 The United States Of America As Represented By The United States Department Of Energy Process for producing organic products containing silicon, hydrogen, nitrogen, and carbon by the direct reaction between elemental silicon and organic amines
DE3829503A1 (de) * 1988-08-31 1990-03-01 Bayer Ag Siliciumnitridpulver mit geringem sauerstoffgehalt
US4929432A (en) * 1988-10-19 1990-05-29 Union Carbide Corporation Process for producing crystalline silicon nitride powder
JP2659807B2 (ja) * 1989-01-26 1997-09-30 万鎔工業株式会社 直接製錬方法
US5244647A (en) * 1990-08-29 1993-09-14 Tanaka Kinkinzoku Kogyo K.K. Process of preparing hexaamminerhodium trihydroxide, hexaammineplatinum (IV) tetrahydroxide, tetraammineplatinum (II) dihydroxide and tetraamminepalladium dihydroxide
DE4031070A1 (de) * 1990-10-02 1992-04-09 Bayer Ag Siliciumdiimid, verfahren zu dessen herstellung sowie daraus erhaltenes siliciumnitrid
US5171557A (en) * 1991-05-28 1992-12-15 Ford Motor Company Method for silicon nitride precursor solids recovery
DE4241287A1 (de) * 1992-12-08 1994-06-09 Bayer Ag Siliciumaluminiumnitridkeramik und Vorläuferverbindungen, Verfahren zu ihrer Herstellung sowie deren Verwendung
US5618509A (en) * 1993-07-09 1997-04-08 Showa Denko K.K. Method for producing cubic boron nitride
DE19651731B4 (de) * 1995-12-12 2012-08-16 Ube Industries, Ltd. Verfahren zur Herstellung einer Stickstoff enthaltenden Silanverbindung
US5968594A (en) * 1996-06-28 1999-10-19 Lam Research Corporation Direct liquid injection of liquid ammonia solutions in chemical vapor deposition
JP2005097022A (ja) * 2003-09-22 2005-04-14 Japan Science & Technology Agency Ｉｉｉｂ族窒化物の合成方法
JP4585043B1 (ja) * 2009-11-12 2010-11-24 太平洋セメント株式会社 金属窒化物の製造方法
KR101746562B1 (ko) 2009-11-12 2017-06-13 다이헤이요 세멘토 가부시키가이샤 알칼리금속 질화물 또는 알칼리토금속 질화물의 제조방법
JP5627099B2 (ja) * 2010-02-08 2014-11-19 太平洋セメント株式会社 アルカリ金属窒化物の製造方法
JP5627105B2 (ja) * 2010-02-08 2014-11-19 太平洋セメント株式会社 アルカリ土類金属窒化物の製造方法
JP5651493B2 (ja) * 2010-02-08 2015-01-14 太平洋セメント株式会社 多種アルカリ土類金属窒化物複合体の製造方法
JP5567880B2 (ja) * 2010-03-30 2014-08-06 太平洋セメント株式会社 反応制御方法
JP5849961B2 (ja) * 2010-10-20 2016-02-03 三菱化学株式会社 共沈原料を用いた窒化物蛍光体の製造方法、窒化物蛍光体、及びその原料
KR20120061343A (ko) * 2010-12-03 2012-06-13 삼성엘이디 주식회사 형광체 제조방법 및 발광 장치
JP6089032B2 (ja) 2011-06-27 2017-03-01 シックスポイント マテリアルズ， インコーポレイテッド 遷移金属窒化物および遷移金属窒化物の合成方法
WO2013042721A1 (ja) * 2011-09-22 2013-03-28 戸田工業株式会社 強磁性窒化鉄粒子粉末の製造方法、異方性磁石、ボンド磁石及び圧粉磁石
CN105236363B (zh) * 2015-10-12 2018-01-16 陕西阳乐陶瓷材料科技有限公司 一种制备微米纳米级球形氮化硅粉的方法
WO2017169584A1 (ja) * 2016-03-31 2017-10-05 富士フイルム株式会社 組成物、硬化膜、カラーフィルタ、遮光膜、固体撮像素子および画像表示装置
CN115246632A (zh) * 2020-11-02 2022-10-28 刘辉 一种利用固态四氯化钛与低温液氨制备氮化钛型材的方法
CN113148966B (zh) * 2021-04-20 2022-04-29 安徽工业大学 氨解法制备高纯氮化硅粉体方法

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
US2207791A (en) * 1938-03-18 1940-07-16 Fernelius Willis Conard Manufacture of sulphur nitride
US3032397A (en) * 1957-01-25 1962-05-01 Du Pont Preparation of metal nitride pigment flakes
US3591338A (en) * 1968-06-05 1971-07-06 Du Pont Preparation of metal nitrides
US3959446A (en) * 1974-03-01 1976-05-25 The United States Of America As Represented By The Secretary Of The Air Force Synthesis of high purity, alpha phase silicon nitride powder
DE2635167C2 (de) * 1976-08-05 1978-06-01 Rosenthal Ag, 8672 Selb Verfahren zur Verminderung der Gasdurchlässigkeit von porösen Körpern aus reaktionsgesintertem Siliziumnitrid

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116119627A (zh) * 2023-02-08 2023-05-16 华瓷聚力(厦门)新材料有限公司 一种高α相氮化硅粉末合成方法

Also Published As

Publication number Publication date
JPS5644006B2 (sv) 1981-10-16
FR2425291B1 (sv) 1982-11-26
FR2425291A1 (fr) 1979-12-07
DE2915023C2 (de) 1984-11-08
JPS54145400A (en) 1979-11-13
SE438146B (sv) 1985-04-01
DE2915023A1 (de) 1979-11-22
US4196178A (en) 1980-04-01
GB2020264B (en) 1982-09-08
GB2020264A (en) 1979-11-14

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