GB773702A - Method of producing coatings from hard high-melting point nitrides - Google Patents

Method of producing coatings from hard high-melting point nitrides

Info

Publication number
GB773702A
GB773702A GB6372/55A GB637255A GB773702A GB 773702 A GB773702 A GB 773702A GB 6372/55 A GB6372/55 A GB 6372/55A GB 637255 A GB637255 A GB 637255A GB 773702 A GB773702 A GB 773702A
Authority
GB
United Kingdom
Prior art keywords
ammonia
halide
nitride
melting point
nitrides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6372/55A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GEA Group AG
Original Assignee
Metallgesellschaft AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metallgesellschaft AG filed Critical Metallgesellschaft AG
Publication of GB773702A publication Critical patent/GB773702A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

In a method of coating metallic or non-metallic surfaces with nitrides of metals of the fourth and fifth groups of the periodic system, a halide of the desired metal is caused to react with ammonia in the presence of the surface to be coated at a temperature above the decomposition temperature of the complex compounds formed between the halide and ammonia. The ammonia and the halide may be introduced separately into the reaction chamber, or the halide may be formed, as by passing hydrogen halide over the nitride of the nitride-forming metal, in the reaction chamber in a zone which has a lower temperature than the deposition zone and the ammonia introduced only into the deposition zone. The example describes the formation of a titanium nitride coating by reacting titanium tetrachloride with ammonia at a temperature above 650 DEG C. preferably 900 DEG -1200 DEG C., the titanium tetrachloride being introduced in a current of hydrogen. Reference has been directed by the comptroller to Specification 731,990.
GB6372/55A 1954-03-05 1955-03-03 Method of producing coatings from hard high-melting point nitrides Expired GB773702A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE773702X 1954-03-05

Publications (1)

Publication Number Publication Date
GB773702A true GB773702A (en) 1957-05-01

Family

ID=6685091

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6372/55A Expired GB773702A (en) 1954-03-05 1955-03-03 Method of producing coatings from hard high-melting point nitrides

Country Status (1)

Country Link
GB (1) GB773702A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4058579A (en) * 1975-02-27 1977-11-15 Union Carbide Corporation Process for producing an improved boron nitride crucible
US4151325A (en) * 1975-04-03 1979-04-24 The United States Of America As Represented By The United States Department Of Energy Titanium nitride thin films for minimizing multipactoring
US4209552A (en) * 1975-04-03 1980-06-24 The United States Of America As Represented By The United States Department Of Energy Thin film deposition by electric and magnetic crossed-field diode sputtering
US4279947A (en) * 1975-11-25 1981-07-21 Motorola, Inc. Deposition of silicon nitride
US4535000A (en) * 1982-11-22 1985-08-13 Gordon Roy G Chemical vapor deposition of titanium nitride and like films
US4699082A (en) * 1983-02-25 1987-10-13 Liburdi Engineering Limited Apparatus for chemical vapor deposition
US4803127A (en) * 1983-02-25 1989-02-07 Liburdi Engineering Limited Vapor deposition of metal compound coating utilizing metal sub-halides and coated metal article

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4058579A (en) * 1975-02-27 1977-11-15 Union Carbide Corporation Process for producing an improved boron nitride crucible
US4151325A (en) * 1975-04-03 1979-04-24 The United States Of America As Represented By The United States Department Of Energy Titanium nitride thin films for minimizing multipactoring
US4209552A (en) * 1975-04-03 1980-06-24 The United States Of America As Represented By The United States Department Of Energy Thin film deposition by electric and magnetic crossed-field diode sputtering
US4279947A (en) * 1975-11-25 1981-07-21 Motorola, Inc. Deposition of silicon nitride
US4535000A (en) * 1982-11-22 1985-08-13 Gordon Roy G Chemical vapor deposition of titanium nitride and like films
US4699082A (en) * 1983-02-25 1987-10-13 Liburdi Engineering Limited Apparatus for chemical vapor deposition
US4803127A (en) * 1983-02-25 1989-02-07 Liburdi Engineering Limited Vapor deposition of metal compound coating utilizing metal sub-halides and coated metal article

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