SE0103602D0 - High resistivity silicon carbide single crystal - Google Patents

High resistivity silicon carbide single crystal

Info

Publication number
SE0103602D0
SE0103602D0 SE0103602A SE0103602A SE0103602D0 SE 0103602 D0 SE0103602 D0 SE 0103602D0 SE 0103602 A SE0103602 A SE 0103602A SE 0103602 A SE0103602 A SE 0103602A SE 0103602 D0 SE0103602 D0 SE 0103602D0
Authority
SE
Sweden
Prior art keywords
silicon carbide
high resistivity
resistivity silicon
single crystal
carbide single
Prior art date
Application number
SE0103602A
Other languages
English (en)
Other versions
SE520968C2 (sv
SE0103602L (sv
Inventor
Alexandra Ellison
Son Nguyen Tien
Bjoern Magnusson
Erik Janzen
Original Assignee
Okmetic Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okmetic Ab filed Critical Okmetic Ab
Priority to SE0103602A priority Critical patent/SE520968C2/sv
Publication of SE0103602D0 publication Critical patent/SE0103602D0/sv
Priority to EP02783900.0A priority patent/EP1440461B1/en
Priority to CNB028215974A priority patent/CN1302518C/zh
Priority to US10/281,173 priority patent/US7018597B2/en
Priority to AU2002347705A priority patent/AU2002347705A1/en
Priority to JP2003541026A priority patent/JP4434736B2/ja
Priority to PCT/SE2002/001961 priority patent/WO2003038868A2/en
Publication of SE0103602L publication Critical patent/SE0103602L/sv
Publication of SE520968C2 publication Critical patent/SE520968C2/sv
Priority to JP2008256303A priority patent/JP4954959B2/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE0103602A 2001-10-29 2001-10-29 Högresistiv monokristallin kiselkarbid och metod för dess framställning SE520968C2 (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE0103602A SE520968C2 (sv) 2001-10-29 2001-10-29 Högresistiv monokristallin kiselkarbid och metod för dess framställning
EP02783900.0A EP1440461B1 (en) 2001-10-29 2002-10-28 High resistivity silicon carbide single crystal and method of producing it
CNB028215974A CN1302518C (zh) 2001-10-29 2002-10-28 高电阻率碳化硅单晶体及制造方法
US10/281,173 US7018597B2 (en) 2001-10-29 2002-10-28 High resistivity silicon carbide single crystal
AU2002347705A AU2002347705A1 (en) 2001-10-29 2002-10-28 High resistivity silicon carbide single crystal and method of producing it
JP2003541026A JP4434736B2 (ja) 2001-10-29 2002-10-28 高い抵抗率の炭化ケイ素単結晶
PCT/SE2002/001961 WO2003038868A2 (en) 2001-10-29 2002-10-28 High resistivity silicon carbide single crystal and method of producing it
JP2008256303A JP4954959B2 (ja) 2001-10-29 2008-10-01 高い抵抗率の炭化ケイ素単結晶

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0103602A SE520968C2 (sv) 2001-10-29 2001-10-29 Högresistiv monokristallin kiselkarbid och metod för dess framställning

Publications (3)

Publication Number Publication Date
SE0103602D0 true SE0103602D0 (sv) 2001-10-29
SE0103602L SE0103602L (sv) 2003-04-30
SE520968C2 SE520968C2 (sv) 2003-09-16

Family

ID=20285810

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0103602A SE520968C2 (sv) 2001-10-29 2001-10-29 Högresistiv monokristallin kiselkarbid och metod för dess framställning

Country Status (7)

Country Link
US (1) US7018597B2 (sv)
EP (1) EP1440461B1 (sv)
JP (2) JP4434736B2 (sv)
CN (1) CN1302518C (sv)
AU (1) AU2002347705A1 (sv)
SE (1) SE520968C2 (sv)
WO (1) WO2003038868A2 (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN113818082A (zh) * 2020-06-18 2021-12-21 盛新材料科技股份有限公司 高纯度半绝缘单晶碳化硅晶片与碳化硅晶体

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US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
SE525574C2 (sv) * 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
JP5146975B2 (ja) * 2004-06-17 2013-02-20 新日鐵住金株式会社 炭化珪素単結晶および単結晶ウェハ
EP1782454A4 (en) * 2004-07-07 2009-04-29 Ii Vi Inc LOW DOPED SEMI-INSULATING SILICON CARBIDE CRYSTALS AND METHOD
JP5068423B2 (ja) * 2004-10-13 2012-11-07 新日本製鐵株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
US7811943B2 (en) * 2004-12-22 2010-10-12 Cree, Inc. Process for producing silicon carbide crystals having increased minority carrier lifetimes
US7276117B2 (en) * 2005-02-09 2007-10-02 Cree Dulles, Inc. Method of forming semi-insulating silicon carbide single crystal
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
US20090053125A1 (en) * 2007-08-20 2009-02-26 Il-Vi Incorporated Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals
JP5521317B2 (ja) 2008-11-20 2014-06-11 トヨタ自動車株式会社 ｐ型ＳｉＣ半導体
EP2471981A4 (en) 2009-08-27 2013-04-17 Nippon Steel & Sumitomo Metal Corp SIC MONOCRYSTAL WAFER AND METHOD FOR MANUFACTURING THE SAME
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JP5839315B2 (ja) * 2010-07-30 2016-01-06 株式会社デンソー 炭化珪素単結晶およびその製造方法
US20130153836A1 (en) * 2010-09-02 2013-06-20 Bridgestone Corporation Method of producing silicon carbide single crystal, silicon carbide single crystal, and silicon carbide single crystal substrate
CN102560671B (zh) 2010-12-31 2015-05-27 中国科学院物理研究所 半绝缘碳化硅单晶
CN102560672A (zh) * 2010-12-31 2012-07-11 中国科学院物理研究所 半绝缘碳化硅单晶材料
JP5953712B2 (ja) * 2011-11-22 2016-07-20 富士通株式会社 化合物半導体装置の製造方法、基板評価装置及び基板評価方法
US8679863B2 (en) * 2012-03-15 2014-03-25 International Business Machines Corporation Fine tuning highly resistive substrate resistivity and structures thereof
JP5943509B2 (ja) * 2012-03-30 2016-07-05 国立研究開発法人産業技術総合研究所 炭化珪素基板への成膜方法
CN104364428B (zh) * 2012-05-24 2017-09-05 Ⅱ－Ⅵ公司 钒补偿的NU型和PI型SI SiC单晶及其晶体生长方法
JP6295537B2 (ja) * 2013-07-17 2018-03-20 住友金属鉱山株式会社 炭化珪素基板ならびに半導体素子
JP6178181B2 (ja) 2013-09-12 2017-08-09 株式会社東芝 半導体装置及びその製造方法
JP6671124B2 (ja) * 2015-08-10 2020-03-25 ローム株式会社 窒化物半導体デバイス
JP6706786B2 (ja) * 2015-10-30 2020-06-10 一般財団法人電力中央研究所 エピタキシャルウェハの製造方法、エピタキシャルウェハ、半導体装置の製造方法及び半導体装置
CN107190323A (zh) * 2017-06-06 2017-09-22 宝鸡文理学院 一种生长低缺陷碳化硅单晶的方法
WO2020077846A1 (zh) 2018-10-16 2020-04-23 山东天岳先进材料科技有限公司 掺杂少量钒的半绝缘碳化硅单晶、衬底、制备方法
WO2020255343A1 (ja) * 2019-06-20 2020-12-24 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
JPWO2021020574A1 (sv) 2019-08-01 2021-02-04
JP7254663B2 (ja) 2019-08-27 2023-04-10 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
TWI698397B (zh) 2019-11-11 2020-07-11 財團法人工業技術研究院 碳化矽粉體的純化方法
TW202200498A (zh) 2020-06-18 2022-01-01 盛新材料科技股份有限公司 半絕緣單晶碳化矽塊材以及粉末
JP2021195301A (ja) * 2020-06-18 2021-12-27 盛新材料科技股▲ふん▼有限公司Taisic Materials Corp. 半絶縁性単結晶炭化ケイ素粉末の製造方法
EP4206366A1 (en) * 2020-08-28 2023-07-05 Kyocera Corporation Sic polycrystal manufacturing method
CN113668064B (zh) * 2021-07-29 2022-12-23 山西烁科晶体有限公司 一种优化碳化硅晶片电阻率的辐照方法
CN114093765B (zh) * 2022-01-18 2023-02-28 浙江大学杭州国际科创中心 一种提高碳化硅薄膜少子寿命的方法
WO2024014246A1 (ja) * 2022-07-14 2024-01-18 住友電気工業株式会社 炭化珪素結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP7215630B1 (ja) 2022-08-22 2023-01-31 信越半導体株式会社 窒化物半導体基板及びその製造方法
WO2024100962A1 (ja) * 2022-11-10 2024-05-16 住友電気工業株式会社 炭化珪素基板、エピタキシャル基板の製造方法および半導体装置の製造方法
WO2024157718A1 (ja) * 2023-01-24 2024-08-02 住友電気工業株式会社 炭化珪素基板、エピタキシャル基板の製造方法および半導体装置の製造方法

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US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
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US6396080B2 (en) * 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
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Publication number Priority date Publication date Assignee Title
CN113818082A (zh) * 2020-06-18 2021-12-21 盛新材料科技股份有限公司 高纯度半绝缘单晶碳化硅晶片与碳化硅晶体

Also Published As

Publication number Publication date
JP4434736B2 (ja) 2010-03-17
US20030079676A1 (en) 2003-05-01
SE520968C2 (sv) 2003-09-16
JP2005507360A (ja) 2005-03-17
CN1592949A (zh) 2005-03-09
US7018597B2 (en) 2006-03-28
JP4954959B2 (ja) 2012-06-20
AU2002347705A1 (en) 2003-05-12
CN1302518C (zh) 2007-02-28
EP1440461B1 (en) 2019-07-17
WO2003038868A3 (en) 2003-11-27
WO2003038868A2 (en) 2003-05-08
EP1440461A2 (en) 2004-07-28
SE0103602L (sv) 2003-04-30
JP2009073734A (ja) 2009-04-09

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