JP5146975B2 - 炭化珪素単結晶および単結晶ウェハ - Google Patents
炭化珪素単結晶および単結晶ウェハ Download PDFInfo
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- JP5146975B2 JP5146975B2 JP2004179382A JP2004179382A JP5146975B2 JP 5146975 B2 JP5146975 B2 JP 5146975B2 JP 2004179382 A JP2004179382 A JP 2004179382A JP 2004179382 A JP2004179382 A JP 2004179382A JP 5146975 B2 JP5146975 B2 JP 5146975B2
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- single crystal
- silicon carbide
- carbide single
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- 239000013078 crystal Substances 0.000 title claims description 106
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 78
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 77
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 58
- 229910052757 nitrogen Inorganic materials 0.000 claims description 29
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 24
- 229910052796 boron Inorganic materials 0.000 claims description 24
- 238000005259 measurement Methods 0.000 claims description 9
- 238000009835 boiling Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 31
- 239000012535 impurity Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 17
- 239000000370 acceptor Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000859 sublimation Methods 0.000 description 5
- 230000008022 sublimation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002500 ions Chemical group 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Yu. M. Tairov and V. F. Tsvetkov, Journal of Crystal Growth, Vol.52 (1981) pp.146
(1) 室温で1×108Ωcm以上の電気抵抗率と、液体窒素沸点温度(77K)以下において陽電子寿命測定での陽電子平均寿命が155psよりも長寿命となる結晶領域を含み、陽電子寿命で同定できる原子空孔が、複数集合した空孔クラスター、及び、空孔対(2重空孔)の内1種以上を含むことを特徴とする半絶縁性炭化珪素単結晶、
(2) 前記炭化珪素単結晶の窒素濃度が硼素濃度を上回る領域を有する上記(1)に記載の半絶縁性炭化珪素単結晶、
(3) 前記炭化珪素単結晶の窒素濃度が1×1017cm−3以下の領域を有する上記(2)に記載の半絶縁性炭化珪素単結晶、
(4) 前記炭化珪素単結晶の硼素濃度が5×1016cm−3以下の領域を有する上記(2)又は(3)に記載の半絶縁性炭化珪素単結晶、
(5) 前記炭化珪素単結晶の窒素濃度と硼素濃度の差が3×1016cm−3以下の領域を有する上記(2)〜(4)のいずれかに記載の半絶縁性炭化珪素単結晶、
(6) 前記炭化珪素単結晶のポリタイプが4H又は6Hである上記(1)〜(5)のいずれかに記載の半絶縁性炭化珪素単結晶、
(7) 上記(1)〜(6)のいずれかに記載の炭化珪素単結晶を加工、研磨してなる半絶縁性炭化珪素単結晶ウェハ、
(8) 前記単結晶ウェハの口径が50mm以上である上記(7)に記載の半絶縁性炭化珪素単結晶ウェハ、
である。
種結晶を用いる通常の昇華再結晶法によって、直径50mm、ポリタイプが4Hである単結晶(インゴットI、インゴットII)を作製した。図1に、使用した成長炉及び坩堝等の概略図を示す。黒鉛坩堝(3)中にSiC原料(2)を充填し、その上部対向面にポリタイプが4H型の単結晶種結晶基板(1)を据え付けてあり、黒鉛坩堝を高周波コイル(7)により加熱させて、原料粉末から昇華させ、種結晶基板上に結晶成長させる方法である。雰囲気ガスとして純度99.9999%以上のアルゴンガスを使用した。また、SiC原料(2)に含まれる窒素濃度及び硼素濃度を二次イオン質量分析装置(SIMS)によって測定したところ、それぞれ8×1015cm−3、1.5×1016cm−3であった。
2…SiC粉末原料、
3…グラファイト坩堝、
4…二重石英管(水冷式)、
5…断熱材、
6…真空排気装置、
7…高周波加熱コイル。
Claims (8)
- 室温で1×108Ωcm以上の電気抵抗率と、液体窒素沸点温度(77K)以下において陽電子寿命測定での陽電子平均寿命が155psよりも長寿命となる結晶領域を含み、陽電子寿命で同定できる原子空孔が、複数集合した空孔クラスター、及び、空孔対(2重空孔)の内1種以上を含むことを特徴とする半絶縁性炭化珪素単結晶。
- 前記炭化珪素単結晶の窒素濃度が硼素濃度を上回る領域を有する請求項1に記載の半絶縁性炭化珪素単結晶。
- 前記炭化珪素単結晶の窒素濃度が1×1017cm−3以下の領域を有する請求項2に記載の半絶縁性炭化珪素単結晶。
- 前記炭化珪素単結晶の硼素濃度が5×1016cm−3以下の領域を有する請求項2又は3に記載の半絶縁性炭化珪素単結晶。
- 前記炭化珪素単結晶の窒素濃度と硼素濃度の差が3×1016cm−3以下の領域を有する請求項2〜4のいずれかに記載の半絶縁性炭化珪素単結晶。
- 前記炭化珪素単結晶のポリタイプが4H又は6Hである請求項1〜5のいずれかに記載の半絶縁性炭化珪素単結晶。
- 請求項1〜6のいずれかに記載の炭化珪素単結晶を加工、研磨してなる半絶縁性炭化珪素単結晶ウェハ。
- 前記単結晶ウェハの口径が50mm以上である請求項7に記載の半絶縁性炭化珪素単結晶ウェハ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004179382A JP5146975B2 (ja) | 2004-06-17 | 2004-06-17 | 炭化珪素単結晶および単結晶ウェハ |
EP05752931A EP1772539B1 (en) | 2004-06-17 | 2005-06-15 | Silicon carbide single crystal and single crystal wafer |
PCT/JP2005/011390 WO2005123992A1 (ja) | 2004-06-17 | 2005-06-15 | 炭化珪素単結晶および単結晶ウェハ |
KR1020067025304A KR100846216B1 (ko) | 2004-06-17 | 2005-06-15 | 탄화규소 단결정 및 단결정 웨이퍼 |
US11/629,377 US7799305B2 (en) | 2004-06-17 | 2005-06-15 | Silicon carbide single crystal and single crystal wafer |
Applications Claiming Priority (1)
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---|---|---|---|
JP2004179382A JP5146975B2 (ja) | 2004-06-17 | 2004-06-17 | 炭化珪素単結晶および単結晶ウェハ |
Publications (2)
Publication Number | Publication Date |
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JP2006001784A JP2006001784A (ja) | 2006-01-05 |
JP5146975B2 true JP5146975B2 (ja) | 2013-02-20 |
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ID=35509694
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JP2004179382A Expired - Lifetime JP5146975B2 (ja) | 2004-06-17 | 2004-06-17 | 炭化珪素単結晶および単結晶ウェハ |
Country Status (5)
Country | Link |
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US (1) | US7799305B2 (ja) |
EP (1) | EP1772539B1 (ja) |
JP (1) | JP5146975B2 (ja) |
KR (1) | KR100846216B1 (ja) |
WO (1) | WO2005123992A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4470690B2 (ja) | 2004-10-29 | 2010-06-02 | 住友電気工業株式会社 | 炭化珪素単結晶、炭化珪素基板および炭化珪素単結晶の製造方法 |
US20070128068A1 (en) * | 2005-11-15 | 2007-06-07 | Hitachi Metals, Ltd. | Solder alloy, solder ball, and solder joint using the same |
JP2007320790A (ja) * | 2006-05-30 | 2007-12-13 | Nippon Steel Corp | 炭化珪素単結晶の製造方法、炭化珪素単結晶インゴット及び炭化珪素単結晶基板 |
JP4853527B2 (ja) * | 2009-02-19 | 2012-01-11 | トヨタ自動車株式会社 | n型SiC単結晶の製造方法、それによって得られるn型SiC単結晶およびその用途 |
US20110097380A1 (en) * | 2009-10-28 | 2011-04-28 | Warsaw Orthopedic, Inc. | Clonidine formulations having antimicrobial properties |
KR101227051B1 (ko) * | 2010-03-30 | 2013-01-29 | 동의대학교 산학협력단 | 단결정 성장 방법 및 단결정 원료 |
WO2012053081A1 (ja) * | 2010-10-20 | 2012-04-26 | 株式会社Nhvコーポレーション | 半絶縁性SiC結晶とその作製方法およびデバイス用基板、IC用基板 |
CN102560671B (zh) * | 2010-12-31 | 2015-05-27 | 中国科学院物理研究所 | 半绝缘碳化硅单晶 |
US9577045B2 (en) | 2014-08-04 | 2017-02-21 | Fairchild Semiconductor Corporation | Silicon carbide power bipolar devices with deep acceptor doping |
CN108977885A (zh) * | 2018-08-20 | 2018-12-11 | 孙月静 | 一种基于LPE法生产SiC的工艺 |
JP2021195301A (ja) * | 2020-06-18 | 2021-12-27 | 盛新材料科技股▲ふん▼有限公司Taisic Materials Corp. | 半絶縁性単結晶炭化ケイ素粉末の製造方法 |
TW202200498A (zh) * | 2020-06-18 | 2022-01-01 | 盛新材料科技股份有限公司 | 半絕緣單晶碳化矽塊材以及粉末 |
US20210395917A1 (en) * | 2020-06-18 | 2021-12-23 | Taisic Materials Corp. | Semi-insulating single-crystal silicon carbide bulk material and powder |
CN113818081A (zh) * | 2020-06-18 | 2021-12-21 | 盛新材料科技股份有限公司 | 半绝缘单晶碳化硅块材以及粉末 |
CN113981528B (zh) * | 2020-07-27 | 2024-06-21 | 环球晶圆股份有限公司 | 碳化硅晶片的制造方法以及半导体结构 |
Family Cites Families (7)
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JP3274246B2 (ja) * | 1993-08-23 | 2002-04-15 | コマツ電子金属株式会社 | エピタキシャルウェーハの製造方法 |
US6396080B2 (en) * | 1999-05-18 | 2002-05-28 | Cree, Inc | Semi-insulating silicon carbide without vanadium domination |
US6218680B1 (en) * | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
SE520968C2 (sv) * | 2001-10-29 | 2003-09-16 | Okmetic Oyj | Högresistiv monokristallin kiselkarbid och metod för dess framställning |
JP4054197B2 (ja) * | 2002-02-05 | 2008-02-27 | 新日本製鐵株式会社 | 炭化珪素単結晶育成用種結晶及びその製造方法並びに炭化珪素単結晶インゴットの製造方法 |
JP2004099340A (ja) * | 2002-09-05 | 2004-04-02 | Nippon Steel Corp | 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法 |
WO2004027122A1 (en) | 2002-09-19 | 2004-04-01 | Showa Denko K.K. | Silicon carbide single crystal and method and apparatus for producing the same |
-
2004
- 2004-06-17 JP JP2004179382A patent/JP5146975B2/ja not_active Expired - Lifetime
-
2005
- 2005-06-15 KR KR1020067025304A patent/KR100846216B1/ko active IP Right Grant
- 2005-06-15 WO PCT/JP2005/011390 patent/WO2005123992A1/ja not_active Application Discontinuation
- 2005-06-15 EP EP05752931A patent/EP1772539B1/en active Active
- 2005-06-15 US US11/629,377 patent/US7799305B2/en active Active
Also Published As
Publication number | Publication date |
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EP1772539A4 (en) | 2009-04-22 |
JP2006001784A (ja) | 2006-01-05 |
WO2005123992A1 (ja) | 2005-12-29 |
US7799305B2 (en) | 2010-09-21 |
KR100846216B1 (ko) | 2008-07-15 |
KR20070015447A (ko) | 2007-02-02 |
EP1772539B1 (en) | 2013-02-27 |
US20080038531A1 (en) | 2008-02-14 |
EP1772539A8 (en) | 2007-08-15 |
EP1772539A1 (en) | 2007-04-11 |
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