ATE527683T1 - Verfahren zur dotierung von halbleitern - Google Patents

Verfahren zur dotierung von halbleitern

Info

Publication number
ATE527683T1
ATE527683T1 AT02759310T AT02759310T ATE527683T1 AT E527683 T1 ATE527683 T1 AT E527683T1 AT 02759310 T AT02759310 T AT 02759310T AT 02759310 T AT02759310 T AT 02759310T AT E527683 T1 ATE527683 T1 AT E527683T1
Authority
AT
Austria
Prior art keywords
solvent
dopping
semiconductors
particles
semiconductor material
Prior art date
Application number
AT02759310T
Other languages
English (en)
Inventor
Mary Cretella
Richard Wallace
Original Assignee
Evergreen Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evergreen Solar Inc filed Critical Evergreen Solar Inc
Application granted granted Critical
Publication of ATE527683T1 publication Critical patent/ATE527683T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/19—Diffusion sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
AT02759310T 2001-08-10 2002-08-08 Verfahren zur dotierung von halbleitern ATE527683T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31178201P 2001-08-10 2001-08-10
PCT/US2002/025259 WO2003015144A1 (en) 2001-08-10 2002-08-08 Method and apparatus for doping semiconductors

Publications (1)

Publication Number Publication Date
ATE527683T1 true ATE527683T1 (de) 2011-10-15

Family

ID=23208442

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02759310T ATE527683T1 (de) 2001-08-10 2002-08-08 Verfahren zur dotierung von halbleitern

Country Status (5)

Country Link
US (3) US7001455B2 (de)
EP (1) EP1417702B1 (de)
JP (1) JP2004538231A (de)
AT (1) ATE527683T1 (de)
WO (1) WO2003015144A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE527683T1 (de) * 2001-08-10 2011-10-15 Evergreen Solar Inc Verfahren zur dotierung von halbleitern
NL1026377C2 (nl) * 2004-06-10 2005-12-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn-siliciumfolies.
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
JP5193041B2 (ja) * 2005-08-23 2013-05-08 ピーエスティ・センサーズ・（プロプライエタリー）・リミテッド 粒状半導体材料のドーピング
US20080220544A1 (en) * 2007-03-10 2008-09-11 Bucher Charles E Method for utilizing heavily doped silicon feedstock to produce substrates for photovoltaic applications by dopant compensation during crystal growth
US20090039478A1 (en) * 2007-03-10 2009-02-12 Bucher Charles E Method For Utilizing Heavily Doped Silicon Feedstock To Produce Substrates For Photovoltaic Applications By Dopant Compensation During Crystal Growth
US7651566B2 (en) * 2007-06-27 2010-01-26 Fritz Kirscht Method and system for controlling resistivity in ingots made of compensated feedstock silicon
US8968467B2 (en) 2007-06-27 2015-03-03 Silicor Materials Inc. Method and system for controlling resistivity in ingots made of compensated feedstock silicon
US20100243963A1 (en) * 2009-03-31 2010-09-30 Integrated Photovoltaics, Incorporated Doping and milling of granular silicon
US9664448B2 (en) * 2012-07-30 2017-05-30 Solar World Industries America Inc. Melting apparatus
US20150284873A1 (en) * 2012-12-11 2015-10-08 Hemlock Semiconductor Corporation Methods of forming and analyzing doped silicon
CN103489932B (zh) * 2013-09-04 2016-03-30 苏州金瑞晨科技有限公司 一种纳米硅磷浆及其制备方法和应用
DE102014103013B4 (de) * 2014-03-06 2017-09-21 Infineon Technologies Ag Verfahren zum Erzeugen einer getrockneten Pastenschicht, Verfahren zum Erzeugen einer Sinterverbindung und Durchlaufanlage zur Durchführung der Verfahren
US10415149B2 (en) 2017-03-31 2019-09-17 Silfex, Inc. Growth of a shaped silicon ingot by feeding liquid onto a shaped ingot

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US3998659A (en) * 1974-01-28 1976-12-21 Texas Instruments Incorporated Solar cell with semiconductor particles and method of fabrication
DE2447204A1 (de) * 1974-10-03 1976-04-08 Licentia Gmbh Fluessiges dotierungsmittel und verfahren zu seiner herstellung
US4661200A (en) 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4689109A (en) 1980-12-11 1987-08-25 Sachs Emanuel M String stabilized ribbon growth a method for seeding same
US4627887A (en) 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4594229A (en) 1981-02-25 1986-06-10 Emanuel M. Sachs Apparatus for melt growth of crystalline semiconductor sheets
GB2114365B (en) * 1982-01-28 1986-08-06 Owens Illinois Inc Process for forming a doped oxide film and composite article
JPS59182293A (ja) * 1983-03-31 1984-10-17 Shinenerugii Sogo Kaihatsu Kiko シリコンリボン結晶連続成長方法
US5278097A (en) 1989-07-31 1994-01-11 Texas Instruments Incorporated Method of making doped silicon spheres
US5223452A (en) 1989-12-21 1993-06-29 Knepprath Vernon E Method and apparatus for doping silicon spheres
US5147841A (en) 1990-11-23 1992-09-15 The United States Of America As Represented By The United States Department Of Energy Method for the preparation of metal colloids in inverse micelles and product preferred by the method
US5926727A (en) * 1995-12-11 1999-07-20 Stevens; Gary Don Phosphorous doping a semiconductor particle
AU1743397A (en) 1995-12-28 1997-07-28 James R. Heath Organically-functionalized monodisperse nanocrystals of metals
US5620904A (en) 1996-03-15 1997-04-15 Evergreen Solar, Inc. Methods for forming wraparound electrical contacts on solar cells
US5762720A (en) 1996-06-27 1998-06-09 Evergreen Solar, Inc. Solar cell modules with integral mounting structure and methods for forming same
US5741370A (en) 1996-06-27 1998-04-21 Evergreen Solar, Inc. Solar cell modules with improved backskin and methods for forming same
US5986203A (en) 1996-06-27 1999-11-16 Evergreen Solar, Inc. Solar cell roof tile and method of forming same
US6278053B1 (en) 1997-03-25 2001-08-21 Evergreen Solar, Inc. Decals and methods for providing an antireflective coating and metallization on a solar cell
US6114046A (en) 1997-07-24 2000-09-05 Evergreen Solar, Inc. Encapsulant material for solar cell module and laminated glass applications
US6187448B1 (en) 1997-07-24 2001-02-13 Evergreen Solar, Inc. Encapsulant material for solar cell module and laminated glass applications
US6353042B1 (en) 1997-07-24 2002-03-05 Evergreen Solar, Inc. UV-light stabilization additive package for solar cell module and laminated glass applications
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US6200383B1 (en) 1999-05-03 2001-03-13 Evergreen Solar, Inc. Melt depth control for semiconductor materials grown from a melt
US6090199A (en) 1999-05-03 2000-07-18 Evergreen Solar, Inc. Continuous melt replenishment for crystal growth
WO2001014250A2 (en) 1999-08-23 2001-03-01 University Of Hawaii Synthesis of silicon nanoparticles and metal-centered silicon nanoparticles and applications thereof
US6585947B1 (en) 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles
US6426280B2 (en) * 2000-01-26 2002-07-30 Ball Semiconductor, Inc. Method for doping spherical semiconductors
ATE527683T1 (de) * 2001-08-10 2011-10-15 Evergreen Solar Inc Verfahren zur dotierung von halbleitern
US6740158B2 (en) 2002-05-09 2004-05-25 Rwe Schott Solar Inc. Process for coating silicon shot with dopant for addition of dopant in crystal growth

Also Published As

Publication number Publication date
US20050034654A1 (en) 2005-02-17
US7001455B2 (en) 2006-02-21
US7232484B2 (en) 2007-06-19
WO2003015144A1 (en) 2003-02-20
JP2004538231A (ja) 2004-12-24
EP1417702B1 (de) 2011-10-05
US20070254462A1 (en) 2007-11-01
US20050112855A1 (en) 2005-05-26
EP1417702A1 (de) 2004-05-12

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