DE60009997D1 - Eine eine wässrige Dispersionszusammensetzung verwendende chemisch-mechanische Poliermethode zur Verwendung in der Herstellung von Halbleitervorrichtungen - Google Patents
Eine eine wässrige Dispersionszusammensetzung verwendende chemisch-mechanische Poliermethode zur Verwendung in der Herstellung von HalbleitervorrichtungenInfo
- Publication number
- DE60009997D1 DE60009997D1 DE60009997T DE60009997T DE60009997D1 DE 60009997 D1 DE60009997 D1 DE 60009997D1 DE 60009997 T DE60009997 T DE 60009997T DE 60009997 T DE60009997 T DE 60009997T DE 60009997 D1 DE60009997 D1 DE 60009997D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- semiconductor devices
- aqueous dispersion
- mechanical polishing
- chemical mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25175699 | 1999-09-06 | ||
JP25175699A JP4505891B2 (ja) | 1999-09-06 | 1999-09-06 | 半導体装置の製造に用いる化学機械研磨用水系分散体 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60009997D1 true DE60009997D1 (de) | 2004-05-27 |
DE60009997T2 DE60009997T2 (de) | 2005-04-28 |
Family
ID=17227466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60009997T Expired - Lifetime DE60009997T2 (de) | 1999-09-06 | 2000-09-05 | Eine eine wässrige Dispersionszusammensetzung verwendende chemisch-mechanische Poliermethode zur Verwendung in der Herstellung von Halbleitervorrichtungen |
Country Status (6)
Country | Link |
---|---|
US (1) | US6447695B1 (de) |
EP (1) | EP1081200B1 (de) |
JP (1) | JP4505891B2 (de) |
KR (1) | KR100611264B1 (de) |
DE (1) | DE60009997T2 (de) |
TW (1) | TWI257414B (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI254070B (en) | 1999-08-18 | 2006-05-01 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing |
JP2001269859A (ja) * | 2000-03-27 | 2001-10-02 | Jsr Corp | 化学機械研磨用水系分散体 |
JP4078787B2 (ja) * | 2000-03-31 | 2008-04-23 | Jsr株式会社 | 化学機械研磨用水系分散体 |
JP4123685B2 (ja) * | 2000-05-18 | 2008-07-23 | Jsr株式会社 | 化学機械研磨用水系分散体 |
WO2002061810A1 (en) * | 2001-01-16 | 2002-08-08 | Cabot Microelectronics Corporation | Ammonium oxalate-containing polishing system and method |
KR100444307B1 (ko) * | 2001-12-28 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 콘택플러그 형성방법 |
KR100451986B1 (ko) * | 2001-12-31 | 2004-10-08 | 주식회사 하이닉스반도체 | 반도체 소자의 저장전극 콘택 플러그 형성방법 |
US20040162011A1 (en) * | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
JP3692109B2 (ja) * | 2002-10-24 | 2005-09-07 | 株式会社東芝 | 半導体装置の製造方法 |
US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
US7300602B2 (en) * | 2003-01-23 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier metal polishing solution |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
US7037351B2 (en) | 2003-07-09 | 2006-05-02 | Dynea Chemicals Oy | Non-polymeric organic particles for chemical mechanical planarization |
US7300603B2 (en) * | 2003-08-05 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
US7241725B2 (en) | 2003-09-25 | 2007-07-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Barrier polishing fluid |
US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
KR100582771B1 (ko) * | 2004-03-29 | 2006-05-22 | 한화석유화학 주식회사 | 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리 |
US7253111B2 (en) | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
US20060000808A1 (en) * | 2004-07-01 | 2006-01-05 | Fuji Photo Film Co., Ltd. | Polishing solution of metal and chemical mechanical polishing method |
JP2006100538A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
US7988878B2 (en) * | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
KR100672941B1 (ko) * | 2004-10-06 | 2007-01-24 | 삼성전자주식회사 | 구리 부식 억제 세정 용액 및 이를 이용하는 씨엠피 공정 |
US7790618B2 (en) * | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
US20090215269A1 (en) * | 2005-06-06 | 2009-08-27 | Advanced Technology Materials Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
JP2007012679A (ja) * | 2005-06-28 | 2007-01-18 | Asahi Glass Co Ltd | 研磨剤および半導体集積回路装置の製造方法 |
JP2007088024A (ja) * | 2005-09-20 | 2007-04-05 | Fujifilm Corp | 研磨方法 |
JP2007088379A (ja) * | 2005-09-26 | 2007-04-05 | Fujifilm Corp | 水系研磨液、及び、化学機械的研磨方法 |
JP2007207983A (ja) * | 2006-02-01 | 2007-08-16 | Fujifilm Corp | 研磨方法 |
KR20070088245A (ko) * | 2006-02-24 | 2007-08-29 | 후지필름 가부시키가이샤 | 금속용 연마액 |
JP5080012B2 (ja) * | 2006-02-24 | 2012-11-21 | 富士フイルム株式会社 | 金属用研磨液 |
JP4990543B2 (ja) * | 2006-03-23 | 2012-08-01 | 富士フイルム株式会社 | 金属用研磨液 |
JP2007266077A (ja) * | 2006-03-27 | 2007-10-11 | Fujifilm Corp | 金属用研磨液 |
TW200916564A (en) * | 2007-01-31 | 2009-04-16 | Advanced Tech Materials | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
WO2008132983A1 (ja) | 2007-04-17 | 2008-11-06 | Asahi Glass Co., Ltd. | 研磨剤組成物および半導体集積回路装置の製造方法 |
KR20100020975A (ko) | 2007-06-20 | 2010-02-23 | 아사히 가라스 가부시키가이샤 | 연마용 조성물 및 반도체 집적 회로 장치의 제조 방법 |
JP4992826B2 (ja) * | 2008-06-02 | 2012-08-08 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
JP5141792B2 (ja) | 2010-06-29 | 2013-02-13 | 日立化成工業株式会社 | Cmp研磨液及び研磨方法 |
CN102477259B (zh) * | 2010-11-30 | 2015-05-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光浆料 |
US8728934B2 (en) | 2011-06-24 | 2014-05-20 | Tessera, Inc. | Systems and methods for producing flat surfaces in interconnect structures |
SG11201704287TA (en) * | 2014-12-22 | 2017-07-28 | Basf Se | Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates |
JP6908480B2 (ja) * | 2017-09-15 | 2021-07-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5332341B2 (de) * | 1973-03-27 | 1978-09-07 | ||
JP3394101B2 (ja) | 1993-11-02 | 2003-04-07 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
JPH0864594A (ja) * | 1994-08-18 | 1996-03-08 | Sumitomo Metal Ind Ltd | 配線の形成方法 |
US6309560B1 (en) * | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JPH10193510A (ja) * | 1996-12-27 | 1998-07-28 | Nippon Zeon Co Ltd | 樹脂被覆基板の製造方法およびパターン形成方法 |
JP3160545B2 (ja) * | 1997-01-28 | 2001-04-25 | 松下電器産業株式会社 | 埋め込み配線の形成方法 |
KR19990023544A (ko) | 1997-08-19 | 1999-03-25 | 마쯔모또 에이찌 | 무기 입자의 수성 분산체와 그의 제조 방법 |
US5897375A (en) * | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
JP4083342B2 (ja) * | 1999-04-09 | 2008-04-30 | 株式会社トクヤマ | 研磨方法 |
JP2000315666A (ja) * | 1999-04-28 | 2000-11-14 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2001023940A (ja) * | 1999-07-09 | 2001-01-26 | Seimi Chem Co Ltd | 半導体集積回路の平坦化方法及びそのための化学的機械研磨スラリ |
TW501197B (en) * | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
-
1999
- 1999-09-06 JP JP25175699A patent/JP4505891B2/ja not_active Expired - Fee Related
-
2000
- 2000-09-05 EP EP00119200A patent/EP1081200B1/de not_active Expired - Lifetime
- 2000-09-05 TW TW089118177A patent/TWI257414B/zh not_active IP Right Cessation
- 2000-09-05 KR KR1020000052318A patent/KR100611264B1/ko not_active IP Right Cessation
- 2000-09-05 DE DE60009997T patent/DE60009997T2/de not_active Expired - Lifetime
- 2000-09-05 US US09/655,305 patent/US6447695B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TWI257414B (en) | 2006-07-01 |
JP4505891B2 (ja) | 2010-07-21 |
EP1081200B1 (de) | 2004-04-21 |
DE60009997T2 (de) | 2005-04-28 |
US6447695B1 (en) | 2002-09-10 |
EP1081200A1 (de) | 2001-03-07 |
KR100611264B1 (ko) | 2006-08-10 |
KR20010039863A (ko) | 2001-05-15 |
JP2001077062A (ja) | 2001-03-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |