JP7254663B2 - 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 - Google Patents
半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 Download PDFInfo
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- JP7254663B2 JP7254663B2 JP2019155034A JP2019155034A JP7254663B2 JP 7254663 B2 JP7254663 B2 JP 7254663B2 JP 2019155034 A JP2019155034 A JP 2019155034A JP 2019155034 A JP2019155034 A JP 2019155034A JP 7254663 B2 JP7254663 B2 JP 7254663B2
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- silicon carbide
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- 239000004065 semiconductor Substances 0.000 title claims description 76
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 129
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 123
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 54
- 229910052717 sulfur Inorganic materials 0.000 claims description 43
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 41
- 239000011593 sulfur Substances 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 24
- 125000004432 carbon atom Chemical group C* 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000011651 chromium Substances 0.000 claims description 12
- 239000010955 niobium Substances 0.000 claims description 12
- 239000011669 selenium Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052714 tellurium Inorganic materials 0.000 claims description 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 125000004429 atom Chemical group 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 229910052775 Thulium Inorganic materials 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- 150000002602 lanthanoids Chemical class 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 145
- 229910052799 carbon Inorganic materials 0.000 description 38
- 239000012535 impurity Substances 0.000 description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 35
- 239000000654 additive Substances 0.000 description 29
- 230000000996 additive effect Effects 0.000 description 29
- 238000000034 method Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- 125000004434 sulfur atom Chemical group 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 238000009826 distribution Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
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- 239000011229 interlayer Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910021334 nickel silicide Inorganic materials 0.000 description 5
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004566 IR spectroscopy Methods 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
第1の実施形態の半導体装置は、ゲート電極と、ゲート絶縁層と、第1の面と第1の面に対向する第2の面とを有する炭化珪素層であって、ゲート電極と炭化珪素層との間にゲート絶縁層が位置し、 硫黄(S)、セレン(Se)、テルル(Te)、チタン(Ti)、ジルコニウム(Zr)、ハフニウム(Hf)、バナジウム(V)、ニオブ(Nb)、タンタル(Ta)、クロム(Cr)、モリブデン(Mo)、及び、タングステン(W)から成る群から選ばれる少なくとも一つの第1の元素を含み、第1の元素の濃度が最大となる第1の位置と、ゲート絶縁層と炭化珪素層との界面との間の第1の距離が20nm以下であり、第1の元素の濃度が第1の位置の第1の元素の濃度の1/10であり、第1の位置より界面から遠い第2の位置と、界面との間の第2の距離が20nm以下である炭化珪素層と、を備える。
第2の実施形態の半導体装置は、炭化珪素層とゲート絶縁層は、窒素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、ビスマス(Bi)、スカンジウム(Sc)、イットリウム(Y)、及び、ランタノイド(La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)から成る群から選ばれる少なくとも一つの第2の元素を含み、第2の元素の濃度が最大となる第3の位置から界面までの距離が5nm以下である点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第3の実施形態の半導体装置は、炭化珪素層がトレンチを有し、ゲート電極はトレンチの中に位置する点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第4の実施形態のインバータ回路及び駆動装置は、第1の実施形態の半導体装置を備える駆動装置である。
第5の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第6の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第7の実施形態の昇降機は、第1の実施形態の半導体装置を備える昇降機である。
16 ゲート絶縁層
20 ゲート電極
100 MOSFET(半導体装置)
150 インバータ回路
200 MOSFET(半導体装置)
300 MOSFET(半導体装置)
700 駆動装置
800 車両
900 車両
1000 昇降機
P1 第1の面
P2 第2の面
Claims (13)
- ゲート電極と、
ゲート絶縁層と、
第1の面と前記第1の面に対向する第2の面とを有する炭化珪素層であって、
前記ゲート電極と前記炭化珪素層との間に前記ゲート絶縁層が位置し、
硫黄(S)、セレン(Se)、テルル(Te)、チタン(Ti)、ジルコニウム(Zr)、ハフニウム(Hf)、バナジウム(V)、ニオブ(Nb)、タンタル(Ta)、クロム(Cr)、モリブデン(Mo)、及び、タングステン(W)から成る群から選ばれる少なくとも一つの第1の元素を含み、
前記第1の元素の濃度が最大となる第1の位置と、前記ゲート絶縁層と前記炭化珪素層との界面との間の第1の距離が20nm以下であり、
前記第1の元素の濃度が前記第1の位置の前記第1の元素の濃度の1/10であり、前記第1の位置より前記界面から遠い第2の位置と、前記界面との間の第2の距離が20nm以下である炭化珪素層と、
を備え、
前記第1の元素の原子は炭化珪素の結晶構造における炭素原子の位置に存在する、半導体装置。 - 炭化珪素の結晶構造における炭素原子の位置に存在する前記第1の元素の原子の密度が、炭化珪素の結晶構造におけるシリコン原子の位置に存在する前記第1の元素の原子の密度よりも大きい請求項1記載の半導体装置。
- ゲート電極と、
ゲート絶縁層と、
第1の面と前記第1の面に対向する第2の面とを有する炭化珪素層であって、
前記ゲート電極と前記炭化珪素層との間に前記ゲート絶縁層が位置し、
硫黄(S)、セレン(Se)、テルル(Te)、チタン(Ti)、ジルコニウム(Zr)、ハフニウム(Hf)、バナジウム(V)、ニオブ(Nb)、タンタル(Ta)、クロム(Cr)、モリブデン(Mo)、及び、タングステン(W)から成る群から選ばれる少なくとも一つの第1の元素を含み、
前記第1の元素の濃度が最大となる第1の位置と、前記ゲート絶縁層と前記炭化珪素層との界面との間の第1の距離が20nm以下であり、
前記第1の元素の濃度が前記第1の位置の前記第1の元素の濃度の1/10であり、前記第1の位置より前記界面から遠い第2の位置と、前記界面との間の第2の距離が20nm以下である炭化珪素層と、
を備え、
前記炭化珪素層と前記ゲート絶縁層は、窒素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、ビスマス(Bi)、スカンジウム(Sc)、イットリウム(Y)、及び、ランタノイド(La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)から成る群から選ばれる少なくとも一つの第2の元素を含み、前記第2の元素の濃度が最大となる第3の位置から前記界面までの距離が5nm以下である、半導体装置。 - 前記第1の位置の前記第1の元素の濃度は、1×1017cm-3以上である請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1の位置の前記第1の元素の濃度は、3×1018cm-3以上である請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1の元素の原子は炭化珪素の結晶構造における炭素原子の位置に存在する請求項3記載の半導体装置。
- 前記第1の距離が5nm以下である請求項1ないし請求項6いずれか一項記載の半導体装置。
- 前記炭化珪素層がアルミニウムを含み、前記第1の位置の前記第1の元素の濃度が、前記第1の位置のアルミニウム濃度よりも高い請求項1ないし請求項7いずれか一項記載の半導体装置。
- 前記第1の位置のアルミニウム濃度は、1×1015cm-3以上である請求項8記載の半導体装置。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備えるインバータ回路。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備える駆動装置。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備える車両。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備える昇降機。
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