RU2006110512A - Теплопроводный материал, использующий электронные наночастицы - Google Patents

Теплопроводный материал, использующий электронные наночастицы Download PDF

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RU2006110512A
RU2006110512A RU2006110512/28A RU2006110512A RU2006110512A RU 2006110512 A RU2006110512 A RU 2006110512A RU 2006110512/28 A RU2006110512/28 A RU 2006110512/28A RU 2006110512 A RU2006110512 A RU 2006110512A RU 2006110512 A RU2006110512 A RU 2006110512A
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Russia
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composition
thermal
conjugation
circuit board
printed circuit
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RU2006110512/28A
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English (en)
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Сандип Шрикант ТОНАПИ (US)
Сандип Шрикант ТОНАПИ
Хун ЧЖУН (US)
Хун ЧЖУН
Давиде Луис СИМОНЕ (US)
Давиде Луис СИМОНЕ
Реймонд Алберт ФИЛЛИОН (US)
Реймонд Алберт ФИЛЛИОН
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Дженерал Электрик Компани (US)
Дженерал Электрик Компани
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Publication of RU2006110512A publication Critical patent/RU2006110512A/ru

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Claims (10)

1. Композиция (10) для термического сопряжения, содержащая смесь из полимерной матрицы (16), по меньшей мере одного наполнителя (18) микронного размера и электропроводных наночастиц (20), где композиция (10) для термического сопряжения является неэлектропроводной.
2. Композиция (10) для термического сопряжения по п.1, в которой наполнитель (18) микронного размера выбирают из группы, состоящей из коллоидальной двуокиси кремния, плавленой двуокиси кремния, тонкоизмельченного порошка кварца, аморфной двуокиси кремния, сажи, графита, алмаза, гидратов алюминия, нитридов металлов, оксидов металлов и их комбинаций.
3. Композиция (10) для термического сопряжения по п.1, в которой электропроводные наночастицы (20) выбирают из группы, состоящей из меди, серебра, платины, палладия, золота, графита, алюминия, легированного кремния и карбида кремния.
4. Способ увеличения теплопередачи, включающий
размещение компоненты (12), создающей тепло, в контакте с неэлектропроводной композицией (10) для термического сопряжения, содержащей смесь из полимерной матрицы (16), по меньшей мере одного наполнителя (18) микронного размера и электропроводных наночастиц (20); и
размещение теплоотвода (14) в контакте с композицией (10) для термического сопряжения.
5. Электронная компонента, содержащая
компоненту (12), создающую тепло;
теплоотвод (14); и
неэлектропроводную композицию (10) для термического сопряжения, помещенную между компонентой (12), создающей тепло, и теплоотводом (14), причем неэлектропроводная композиция (10) для термического сопряжения содержит смесь из полимерной матрицы (16), по меньшей мере одного наполнителя (18) микронного размера и электропроводных наночастиц (20).
6. Способ увеличения теплопередачи, включающий
размещение компоненты (30), создающей тепло, в контакте с печатной платой (34);
контактирование компоненты (30) по меньшей мере с одним электрическим контактом печатной платы (34) с образованием электрического соединения; и
нанесение композиции (10) для термического сопряжения, содержащей смесь из полимерной матрицы (16), по меньшей мере одного наполнителя (18) микронного размера и электропроводных наночастиц (20), между компонентой (30) и печатной платой (34),
где композиция (10) для термического сопряжения инкапсулирует по меньшей мере одно электрическое соединение.
7. Способ увеличения теплопередачи, включающий
нанесение композиции (10) для термического сопряжения, содержащей смесь из полимерной матрицы (16), по меньшей мере одного наполнителя (18) микронного размера и электропроводных наночастиц (20), для полупроводниковой пластины, содержащей множество посадочных мест для кристаллов, причем посадочные места для кристаллов содержат множество электрических контактов;
размещение по меньшей мере одной паяной сферы (32) на множестве контактов;
частичное отверждение композиции (10) для термического сопряжения, так что открывается верхняя часть по меньшей мере одной паяной сферы (32);
нарезание пластины на отдельные полупроводниковые микросхемы;
размещение по меньшей мере одной полупроводниковой микросхемы на печатной плате (34), так что по меньшей мере одна паяная сфера (32) ориентирована для формирования по меньшей мере одного электрического соединения по меньшей мере с одним электрическим контактом печатной платы (34);
нагревание по меньшей мере одной полупроводниковой микросхемы и платы (34) для одновременного расплавления паяной сферы (32) и отверждения композиции (10) для термического сопряжения; и
охлаждение по меньшей мере одной полупроводниковой схемы и платы (34) для отвердевания паяной сферы (32) и схватывания композиции (10) для термического сопряжения, так что композиция (10) для термического сопряжения инкапсулирует по меньшей мере одно электрическое соединение.
8. Способ увеличения теплопередачи, включающий
нанесение композиции (10) для термического сопряжения, содержащей смесь из полимерной матрицы (16) и электропроводных наночастиц (20), для печатной платы (34);
размещение компоненты (30), создающей тепло, содержащей по меньшей мере один электрический контакт, по меньшей мере с одной паяной сферой (32), на печатной плате (34), так что по меньшей мере одна паяная сфера (32) ориентирована по меньшей мере на один электрический контакт печатной платы (34), образуя по меньшей мере одно электрическое соединение;
нагревание компоненты (30) и платы (34) для одновременного расплавления паяной сферы (32) и отверждения композиции (10) для термического сопряжения; и
охлаждение компоненты (30) и платы (34) для отвердевания паяной сферы (32) и схватывания композиции (10) для термического сопряжения, так что композиция (10) для термического сопряжения инкапсулирует по меньшей мере одно электрическое соединение.
9. Электронная компонента, содержащая
компоненту (30), создающую тепло;
печатную плату (34); и
композицию (10) для термического сопряжения, помещенную между компонентой (30), создающей тепло, и печатной платой (34), причем композиция (10) для термического сопряжения содержит смесь из полимерной матрицы (16), и электропроводных наночастиц (20).
10. Композиция с нижним заполнением, содержащая смесь из полимерной матрицы и электропроводных наночастиц (20), где композиция с нижним заполнением является неэлектропроводной.
RU2006110512/28A 2003-09-03 2004-08-05 Теплопроводный материал, использующий электронные наночастицы RU2006110512A (ru)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD249Z (ru) * 2009-04-29 2011-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Способ изготовления термоэлектрического охладителя для подложки ЧИПа

Families Citing this family (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078109B2 (en) * 2000-02-25 2006-07-18 Thermagon Inc. Heat spreading thermal interface structure
US7416922B2 (en) * 2003-03-31 2008-08-26 Intel Corporation Heat sink with preattached thermal interface material and method of making same
US7256491B2 (en) * 2003-06-06 2007-08-14 Honeywell International Inc. Thermal interconnect systems methods of production and uses thereof
US7014093B2 (en) * 2003-06-26 2006-03-21 Intel Corporation Multi-layer polymer-solder hybrid thermal interface material for integrated heat spreader and method of making same
US7527090B2 (en) * 2003-06-30 2009-05-05 Intel Corporation Heat dissipating device with preselected designed interface for thermal interface materials
US7224039B1 (en) * 2003-09-09 2007-05-29 International Technology Center Polymer nanocomposite structures for integrated circuits
US8070988B2 (en) 2003-09-09 2011-12-06 International Technology Center Nano-carbon hybrid structures
US7794629B2 (en) * 2003-11-25 2010-09-14 Qinetiq Limited Composite materials
US7351606B2 (en) * 2004-06-24 2008-04-01 Palo Alto Research Center Incorporated Method for forming a bottom gate thin film transistor using a blend solution to form a semiconducting layer and an insulating layer
US7300861B2 (en) * 2004-06-24 2007-11-27 Palo Alto Research Center Incorporated Method for interconnecting electronic components using a blend solution to form a conducting layer and an insulating layer
US20050286234A1 (en) * 2004-06-29 2005-12-29 International Business Machines Corporation Thermally conductive composite interface and methods of fabrication thereof for an electronic assembly
US20060199059A1 (en) * 2005-03-01 2006-09-07 Xu Helen X Ion conductive polymer electrolyte and its membrane electrode assembly
US20060270106A1 (en) * 2005-05-31 2006-11-30 Tz-Cheng Chiu System and method for polymer encapsulated solder lid attach
US20060275608A1 (en) * 2005-06-07 2006-12-07 General Electric Company B-stageable film, electronic device, and associated process
DE102005028704B4 (de) 2005-06-20 2016-09-08 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten
US20070131912A1 (en) * 2005-07-08 2007-06-14 Simone Davide L Electrically conductive adhesives
US20070158611A1 (en) * 2005-11-08 2007-07-12 Oldenburg Steven J Compositions comprising nanorods and methods of making and using them
DE102005060860A1 (de) * 2005-12-20 2007-06-28 Robert Bosch Gmbh Elektronikkomponente mit Vergussmasse
US20080023665A1 (en) * 2006-07-25 2008-01-31 Weiser Martin W Thermal interconnect and interface materials, methods of production and uses thereof
US7632425B1 (en) * 2006-10-06 2009-12-15 General Electric Company Composition and associated method
TW200833752A (en) * 2006-10-23 2008-08-16 Lord Corp Highly filled polymer materials
US20100073882A1 (en) * 2006-11-01 2010-03-25 Tooru Yoshikawa Thermally conductive sheet, process for producing the same, and radiator utilizing thermally conductive sheet
JP2008153430A (ja) * 2006-12-18 2008-07-03 Mitsubishi Electric Corp 放熱基板並びに熱伝導性シートおよびこれらを用いたパワーモジュール
US20100249309A1 (en) * 2007-04-05 2010-09-30 Menachem Lewin Nanocomposites and their surfaces
EP2167577A1 (en) * 2007-07-18 2010-03-31 Lord Corporation Thermally conductive underfill formulations
KR20100075894A (ko) * 2007-09-11 2010-07-05 다우 코닝 코포레이션 복합재, 복합재를 포함하는 열계면재료, 그리고 이들의 제조방법 및 용도
EP2188836A2 (en) * 2007-09-11 2010-05-26 Dow Corning Corporation Thermal interface material, electronic device containing the thermal interface material, and methods for their preparation and use
US7723419B1 (en) 2007-09-17 2010-05-25 Ovation Polymer Technology & Engineered Materials, Inc. Composition providing through plane thermal conductivity
US7760507B2 (en) * 2007-12-26 2010-07-20 The Bergquist Company Thermally and electrically conductive interconnect structures
US9027633B2 (en) * 2008-03-24 2015-05-12 Auburn University Nanoparticle-enhanced phase change materials (NEPCM) with improved thermal energy storage
CN102066488A (zh) * 2008-04-21 2011-05-18 霍尼韦尔国际公司 热互连和界面材料、它们的制造方法和用途
DE112009000979B4 (de) * 2008-04-23 2014-12-11 Brewer Science, Inc. Photoempfindliche Hartmaske für die Mikrolithographie
FR2934705B1 (fr) * 2008-07-29 2015-10-02 Univ Toulouse 3 Paul Sabatier Materiau solide composite electriquement conducteur et procede d'obtention d'un tel materiau
JP5039662B2 (ja) * 2008-08-19 2012-10-03 ゼネラル株式会社 転写具
JP5632850B2 (ja) * 2008-10-22 2014-11-26 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 導電性ポリマー組成物、コンタクト、組立品、および方法
US8481103B1 (en) * 2008-12-01 2013-07-09 The Research Foundation Of State University Of New York Method and pattern of dispensing thermal interface materials
US8493746B2 (en) * 2009-02-12 2013-07-23 International Business Machines Corporation Additives for grain fragmentation in Pb-free Sn-based solder
US8128868B2 (en) 2009-02-12 2012-03-06 International Business Machines Corporation Grain refinement by precipitate formation in PB-free alloys of tin
KR101104224B1 (ko) 2009-06-15 2012-01-10 주식회사 이그잭스 유-무기 하이브리드 접착제
US8344053B2 (en) * 2009-09-10 2013-01-01 Pixelligent Technologies, Llc Highly conductive composites
KR101403846B1 (ko) * 2009-11-05 2014-06-03 히타치가세이가부시끼가이샤 열 중합계 개시제 시스템 및 접착제 조성물
US8177878B2 (en) 2009-11-30 2012-05-15 Infineon Technologies Ag Bonding material with exothermically reactive heterostructures
WO2011085224A1 (en) 2010-01-08 2011-07-14 Abs Materials, Inc. Modified sol-gel derived sorbent material and method for using same
WO2011085235A1 (en) 2010-01-08 2011-07-14 Abs Materials, Inc. Porous, swellable, sol-gel derived sensor material and method for using same
WO2011100532A1 (en) 2010-02-12 2011-08-18 Abs Materials, Inc. Sol-gel derived sorbent material containing a sorbate interactive material and method for using the same
WO2011162836A1 (en) 2010-02-17 2011-12-29 Abs Materials, Inc Method for extracting a metal particulate from an aqueous solution using a sol-gel derived sorbent
WO2011156663A1 (en) 2010-06-10 2011-12-15 Abs Materials,Inc Method of treating a material using a sol-gel derived composition
US20110309481A1 (en) * 2010-06-18 2011-12-22 Rui Huang Integrated circuit packaging system with flip chip mounting and method of manufacture thereof
US9177692B2 (en) * 2010-09-30 2015-11-03 Ube Industries, Ltd. Polyamide resin composition and molded article comprising the same
US20120080639A1 (en) * 2010-10-04 2012-04-05 Laird Technologies, Inc. Potato shaped graphite filler, thermal interface materials and emi shielding
WO2012074558A2 (en) 2010-12-03 2012-06-07 Michael Colburn Mixture of graphite and dielectric particles for heat generation and exchange devices
US9045674B2 (en) * 2011-01-25 2015-06-02 International Business Machines Corporation High thermal conductance thermal interface materials based on nanostructured metallic network-polymer composites
US8741998B2 (en) 2011-02-25 2014-06-03 Sabic Innovative Plastics Ip B.V. Thermally conductive and electrically insulative polymer compositions containing a thermally insulative filler and uses thereof
US8552101B2 (en) 2011-02-25 2013-10-08 Sabic Innovative Plastics Ip B.V. Thermally conductive and electrically insulative polymer compositions containing a low thermally conductive filler and uses thereof
US9005485B2 (en) 2011-03-22 2015-04-14 Nano And Advanced Materials Institute Limited High performance die attach adhesives (DAAs) nanomaterials for high brightness LED
NL1038892C2 (en) * 2011-06-24 2013-01-02 Holding B V Ges Heat sinking coating.
US8915617B2 (en) 2011-10-14 2014-12-23 Ovation Polymer Technology And Engineered Materials, Inc. Thermally conductive thermoplastic for light emitting diode fixture assembly
TWI468504B (zh) * 2011-11-15 2015-01-11 Yen Hao Huang Enhance the efficiency of heat transfer agent
US8587945B1 (en) 2012-07-27 2013-11-19 Outlast Technologies Llc Systems structures and materials for electronic device cooling
US9303507B2 (en) 2013-01-31 2016-04-05 Saudi Arabian Oil Company Down hole wireless data and power transmission system
EP2763142A1 (de) * 2013-02-04 2014-08-06 Siemens Aktiengesellschaft Imprägnierharz für einen Elektroisolationskörper, Elektroisolationskörper und Verfahren zum Herstellen des Elektroisolationskörpers
US9227347B2 (en) 2013-02-25 2016-01-05 Sabic Global Technologies B.V. Method of making a heat sink assembly, heat sink assemblies made therefrom, and illumants using the heat sink assembly
US10125298B2 (en) * 2013-03-14 2018-11-13 Case Western Reserve University High thermal conductivity graphite and graphene-containing composites
US8987876B2 (en) 2013-03-14 2015-03-24 General Electric Company Power overlay structure and method of making same
US10269688B2 (en) * 2013-03-14 2019-04-23 General Electric Company Power overlay structure and method of making same
KR102265643B1 (ko) * 2013-05-21 2021-06-17 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오 화학 변환 공정
EP3011591A4 (en) * 2013-06-21 2016-11-02 Lockheed Corp ADAPTABLE ADHESIVE COMPOSITIONS OF METAL NANOPARTICLES AND PROCESS FOR THEIR PREPARATION AND USE
US20150027132A1 (en) * 2013-07-23 2015-01-29 Qiming Zhang Cooling device including an electrocaloric composite
WO2015027230A1 (en) * 2013-08-23 2015-02-26 Lockheed Martin Corporation High-power electronic devices containing metal nanoparticle-based thermal interface materials and related methods
KR20160094385A (ko) 2013-12-05 2016-08-09 허니웰 인터내셔날 인코포레이티드 조절된 pH를 갖는 주석(II) 메탄술포네이트 용액
JP5563175B1 (ja) * 2014-03-05 2014-07-30 清二 加川 高熱伝導率の放熱シート及びその製造方法
US20150279431A1 (en) 2014-04-01 2015-10-01 Micron Technology, Inc. Stacked semiconductor die assemblies with partitioned logic and associated systems and methods
JP5582553B1 (ja) * 2014-05-02 2014-09-03 清二 加川 高熱伝導率の放熱シート及びその製造方法
MX2016016984A (es) 2014-07-07 2017-05-03 Honeywell Int Inc Material de interconexion termica con depurador ionico.
TWI656653B (zh) 2014-07-10 2019-04-11 日商住友電氣工業股份有限公司 Solar power generation module and solar power generation device
US9841391B2 (en) * 2014-09-09 2017-12-12 LifeSan Scotland Limited Hand-held test meter with integrated thermal channel
CN112080258A (zh) 2014-12-05 2020-12-15 霍尼韦尔国际公司 具有低热阻的高性能热界面材料
US20160223269A1 (en) * 2015-02-04 2016-08-04 Outlast Technologies, LLC Thermal management films containing phase change materials
US11229147B2 (en) 2015-02-06 2022-01-18 Laird Technologies, Inc. Thermally-conductive electromagnetic interference (EMI) absorbers with silicon carbide
DE102016015994B3 (de) 2015-02-16 2022-12-01 Mitsubishi Electric Corporation Halbleiter-Vorrichtung
CN106158790B (zh) * 2015-04-10 2018-11-16 台达电子工业股份有限公司 功率模块及其热界面结构
TWI563615B (en) * 2015-05-05 2016-12-21 Siliconware Precision Industries Co Ltd Electronic package structure and the manufacture thereof
CN105355610B (zh) 2015-08-27 2019-01-18 华为技术有限公司 一种电路装置及制造方法
CN107922800B (zh) * 2015-08-28 2020-02-28 杜邦公司 经涂覆的铜颗粒及其用途
WO2017035694A1 (en) 2015-08-28 2017-03-09 E.I. Du Pont De Nemours And Company Electrically conductive adhesives
KR102467418B1 (ko) * 2015-10-20 2022-11-15 주식회사 아모그린텍 그라파이트 복합재료, 이의 제조방법, 및 이를 포함하는 차량용 전자제어 어셈블리
WO2017073010A1 (ja) * 2015-10-27 2017-05-04 ソニー株式会社 電子機器
US10312177B2 (en) 2015-11-17 2019-06-04 Honeywell International Inc. Thermal interface materials including a coloring agent
US9691675B1 (en) * 2015-12-22 2017-06-27 Intel Corporation Method for forming an electrical device and electrical devices
CN109072051B (zh) 2016-03-08 2023-12-26 霍尼韦尔国际公司 相变材料
CN113817264A (zh) * 2016-04-04 2021-12-21 积水化学工业株式会社 树脂成型体
KR102716321B1 (ko) * 2016-05-24 2024-10-14 주식회사 아모그린텍 절연성 방열 코팅조성물 및 이를 통해 형성된 절연성 방열유닛
KR102010256B1 (ko) * 2016-05-24 2019-08-13 주식회사 아모그린텍 코일부품
US10501671B2 (en) 2016-07-26 2019-12-10 Honeywell International Inc. Gel-type thermal interface material
KR102172399B1 (ko) * 2016-11-22 2020-10-30 전남대학교산학협력단 축열 마이크로캡슐 및 그의 제조방법
US10529641B2 (en) * 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
US20180199461A1 (en) * 2017-01-09 2018-07-12 Hamilton Sundstrand Corporation Electronics thermal management
CN110177830A (zh) * 2017-01-19 2019-08-27 索尼公司 复合材料、电子设备和制造电子设备的方法
JP6258538B1 (ja) * 2017-03-14 2018-01-10 有限会社 ナプラ 半導体装置およびその製造方法
US10457001B2 (en) 2017-04-13 2019-10-29 Infineon Technologies Ag Method for forming a matrix composite layer and workpiece with a matrix composite layer
US10121723B1 (en) * 2017-04-13 2018-11-06 Infineon Technologies Austria Ag Semiconductor component and method for producing a semiconductor component
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
CN111164415A (zh) 2017-09-29 2020-05-15 苹果公司 路径解析的光学采样架构
US10428256B2 (en) * 2017-10-23 2019-10-01 Honeywell International Inc. Releasable thermal gel
CN111566154A (zh) * 2017-12-01 2020-08-21 阿科玛股份有限公司 可发泡丙烯酸类组合物
US11773254B2 (en) 2017-12-27 2023-10-03 3M Innovative Properties Company Cured epoxy resin composition suitable for electronic device enclosure, articles, and methods
TWI654218B (zh) 2018-01-08 2019-03-21 財團法人工業技術研究院 樹脂組合物與導熱材料的形成方法
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material
JP7119528B2 (ja) * 2018-04-18 2022-08-17 富士電機株式会社 半導体装置
US10903184B2 (en) * 2018-08-22 2021-01-26 International Business Machines Corporation Filler particle position and density manipulation with applications in thermal interface materials
JP7320603B2 (ja) * 2018-10-10 2023-08-03 ロード コーポレーション 沈降を低減するための高伝導性添加剤
KR102603421B1 (ko) * 2019-01-22 2023-11-17 양쯔 메모리 테크놀로지스 씨오., 엘티디. 집적 회로 패키징 구조 및 그 제조 방법
WO2020176095A1 (en) * 2019-02-28 2020-09-03 Bae Systems Information And Electronic Systems Integration Inc. Optically induced phase change materials
CN111669956B (zh) 2019-03-06 2024-04-02 天津莱尔德电子材料有限公司 热管理和/或电磁干扰减轻材料以及相关装置和方法
US11373921B2 (en) 2019-04-23 2022-06-28 Honeywell International Inc. Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing
CN112447634B (zh) * 2019-09-02 2024-03-19 清华大学 一种低杨氏模量高导热率的热界面材料及其制备方法与应用
US11398446B2 (en) * 2019-09-16 2022-07-26 Lumentum Operations Llc Method and material for attaching a chip to a submount
US11198807B2 (en) * 2019-09-23 2021-12-14 International Business Machines Corporation Thermal interface materials with radiative coupling heat transfer
US11430711B2 (en) 2019-11-26 2022-08-30 Aegis Technology Inc. Carbon nanotube enhanced silver paste thermal interface material
JP2021172763A (ja) * 2020-04-28 2021-11-01 ウシオ電機株式会社 炭素繊維強化プラスチック構造体およびその製造方法
JP2021178926A (ja) * 2020-05-14 2021-11-18 共同技研化学株式会社 両面粘着フィルム
US20220025239A1 (en) * 2020-07-27 2022-01-27 Google Llc Thermal interface material and method for making the same
US20220025241A1 (en) * 2020-07-27 2022-01-27 Google Llc Thermal interface material and method for making the same
KR102542423B1 (ko) 2020-09-23 2023-06-12 라이르드 테크놀로지스, 아이엔씨 열전도성 전자파 장해(emi) 흡수체
CN116285564A (zh) * 2022-12-27 2023-06-23 深圳市鸿合创新信息技术有限责任公司 一种涂料及其制备方法和电子器件
CN116536027B (zh) * 2023-05-23 2023-10-17 江西天永诚高分子材料有限公司 一种低应力有机硅双组份灌封胶及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5026748A (en) * 1990-05-07 1991-06-25 E. I. Du Pont De Nemours And Company Thermally conductive adhesive
JP2865496B2 (ja) * 1992-08-24 1999-03-08 株式会社日立製作所 マルチチップモジュール
DE4401608C1 (de) * 1994-01-20 1995-07-27 Siemens Ag Thermisch leitende, elektrisch isolierende Klebeverbindung, Verfahren zu deren Herstellung und deren Verwendung
KR100196754B1 (ko) * 1995-07-19 1999-06-15 글렌 에이치. 렌젠 주니어 실온 안정성, 일성분계, 열전도성의 가요성 에폭시 접착제
US5781412A (en) * 1996-11-22 1998-07-14 Parker-Hannifin Corporation Conductive cooling of a heat-generating electronic component using a cured-in-place, thermally-conductive interlayer having a filler of controlled particle size
US6265471B1 (en) * 1997-03-03 2001-07-24 Diemat, Inc. High thermally conductive polymeric adhesive
JP3176325B2 (ja) * 1997-09-05 2001-06-18 松下電器産業株式会社 実装構造体とその製造方法
JP3948642B2 (ja) * 1998-08-21 2007-07-25 信越化学工業株式会社 熱伝導性グリース組成物及びそれを使用した半導体装置
US6228681B1 (en) 1999-03-10 2001-05-08 Fry's Metals, Inc. Flip chip having integral mask and underfill providing two-stage bump formation
TWI257410B (en) * 1999-03-25 2006-07-01 Shinetsu Chemical Co Conductive silicone rubber composition and low-resistance connector
US6500891B1 (en) * 2000-05-19 2002-12-31 Loctite Corporation Low viscosity thermally conductive compositions containing spherical thermally conductive particles
JP2002155110A (ja) * 2000-11-22 2002-05-28 Sekisui Chem Co Ltd 重合性組成物及び熱伝導性シート
US20030151030A1 (en) * 2000-11-22 2003-08-14 Gurin Michael H. Enhanced conductivity nanocomposites and method of use thereof
JP2002270732A (ja) * 2001-03-13 2002-09-20 Sharp Corp アンダーフィル材付き電子部品
US7311967B2 (en) 2001-10-18 2007-12-25 Intel Corporation Thermal interface material and electronic assembly having such a thermal interface material
US6761813B2 (en) * 2002-01-31 2004-07-13 Intel Corporation Heat transfer through covalent bonding of thermal interface material
US7013965B2 (en) * 2003-04-29 2006-03-21 General Electric Company Organic matrices containing nanomaterials to enhance bulk thermal conductivity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD249Z (ru) * 2009-04-29 2011-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Способ изготовления термоэлектрического охладителя для подложки ЧИПа

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