PL2546192T3 - Urządzenie emitujące światło, zawierające nanokryształy półprzewodnikowe - Google Patents
Urządzenie emitujące światło, zawierające nanokryształy półprzewodnikoweInfo
- Publication number
- PL2546192T3 PL2546192T3 PL12187692T PL12187692T PL2546192T3 PL 2546192 T3 PL2546192 T3 PL 2546192T3 PL 12187692 T PL12187692 T PL 12187692T PL 12187692 T PL12187692 T PL 12187692T PL 2546192 T3 PL2546192 T3 PL 2546192T3
- Authority
- PL
- Poland
- Prior art keywords
- light emitting
- emitting device
- device including
- semiconductor nanocrystals
- including semiconductor
- Prior art date
Links
- 239000004054 semiconductor nanocrystal Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D71/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans or pop bottles; Bales of material
- B65D71/06—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers
- B65D71/12—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank
- B65D71/36—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank having a tubular shape, e.g. tubular wrappers, with end walls
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D81/00—Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents
- B65D81/24—Adaptations for preventing deterioration or decay of contents; Applications to the container or packaging material of food preservatives, fungicides, pesticides or animal repellants
- B65D81/26—Adaptations for preventing deterioration or decay of contents; Applications to the container or packaging material of food preservatives, fungicides, pesticides or animal repellants with provision for draining away, or absorbing, or removing by ventilation, fluids, e.g. exuded by contents; Applications of corrosion inhibitors or desiccators
- B65D81/261—Adaptations for preventing deterioration or decay of contents; Applications to the container or packaging material of food preservatives, fungicides, pesticides or animal repellants with provision for draining away, or absorbing, or removing by ventilation, fluids, e.g. exuded by contents; Applications of corrosion inhibitors or desiccators for draining or collecting liquids without absorbing them
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
- B65D2571/00123—Bundling wrappers or trays
- B65D2571/00129—Wrapper locking means
- B65D2571/00135—Wrapper locking means integral with the wrapper
- B65D2571/00141—Wrapper locking means integral with the wrapper glued
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
- B65D2571/00123—Bundling wrappers or trays
- B65D2571/00432—Handles or suspending means
- B65D2571/00438—Holes
- B65D2571/0045—Holes for hands
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
- B65D2571/00123—Bundling wrappers or trays
- B65D2571/00555—Wrapper opening devices
- B65D2571/00561—Lines of weakness
- B65D2571/00574—Lines of weakness whereby contents can still be carried after the line has been torn
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
- B65D2571/00123—Bundling wrappers or trays
- B65D2571/00648—Elements used to form the wrapper
- B65D2571/00654—Blanks
- B65D2571/0066—Blanks formed from one single sheet
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
- B65D2571/00123—Bundling wrappers or trays
- B65D2571/00709—Shape of the formed wrapper, i.e. shape of each formed element if the wrapper is made from more than one element
- B65D2571/00722—Shape of the formed wrapper, i.e. shape of each formed element if the wrapper is made from more than one element tubular with end walls, e.g. walls not extending on the whole end surface
- B65D2571/00728—Shape of the formed wrapper, i.e. shape of each formed element if the wrapper is made from more than one element tubular with end walls, e.g. walls not extending on the whole end surface the end walls being closed by gluing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Food Science & Technology (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65309405P | 2005-02-16 | 2005-02-16 | |
EP06735037.1A EP1864341B1 (en) | 2005-02-16 | 2006-02-15 | Light emitting device including semiconductor nanocrystals |
PCT/US2006/005184 WO2006088877A1 (en) | 2005-02-16 | 2006-02-15 | Light emitting device including semiconductor nanocrystals |
EP12187692.4A EP2546192B1 (en) | 2005-02-16 | 2006-02-15 | Light emitting device including semiconductor nanocrystals |
Publications (1)
Publication Number | Publication Date |
---|---|
PL2546192T3 true PL2546192T3 (pl) | 2020-05-18 |
Family
ID=36577480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL12187692T PL2546192T3 (pl) | 2005-02-16 | 2006-02-15 | Urządzenie emitujące światło, zawierające nanokryształy półprzewodnikowe |
Country Status (9)
Country | Link |
---|---|
US (4) | US8232722B2 (pl) |
EP (2) | EP2546192B1 (pl) |
JP (2) | JP5528672B2 (pl) |
KR (2) | KR101257780B1 (pl) |
CN (2) | CN101213681A (pl) |
MY (1) | MY168191A (pl) |
PL (1) | PL2546192T3 (pl) |
TW (1) | TWI440206B (pl) |
WO (1) | WO2006088877A1 (pl) |
Families Citing this family (124)
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US8349745B2 (en) * | 2004-03-15 | 2013-01-08 | Sharp Laboratory of America, Inc. | Fabrication of a semiconductor nanoparticle embedded insulating film luminescence device |
US8007332B2 (en) * | 2004-03-15 | 2011-08-30 | Sharp Laboratories Of America, Inc. | Fabrication of a semiconductor nanoparticle embedded insulating film electroluminescence device |
US10225906B2 (en) * | 2004-10-22 | 2019-03-05 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US20090039764A1 (en) * | 2005-03-17 | 2009-02-12 | Cho Kyung Sang | Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer |
US8718437B2 (en) | 2006-03-07 | 2014-05-06 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
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US7989290B2 (en) | 2005-08-04 | 2011-08-02 | Micron Technology, Inc. | Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps |
KR101304635B1 (ko) * | 2006-01-09 | 2013-09-05 | 삼성전자주식회사 | 무기물 발광 다이오드 및 그의 제조방법 |
WO2007095061A2 (en) * | 2006-02-09 | 2007-08-23 | Qd Vision, Inc. | Device including semiconductor nanocrystals and a layer including a doped organic material and methods |
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US9951438B2 (en) | 2006-03-07 | 2018-04-24 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
US9874674B2 (en) | 2006-03-07 | 2018-01-23 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
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ES2672791T3 (es) * | 2007-06-25 | 2018-06-18 | Massachusetts Institute Of Technology | Dispositivo fotovoltaico que incluye nanocristales semiconductores |
US10043993B2 (en) * | 2007-06-25 | 2018-08-07 | Massachusetts Institute Of Technology | Electro-optical device |
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- 2006-02-15 JP JP2007555341A patent/JP5528672B2/ja active Active
- 2006-02-15 PL PL12187692T patent/PL2546192T3/pl unknown
- 2006-02-15 MY MYPI20060650A patent/MY168191A/en unknown
- 2006-02-15 TW TW095105073A patent/TWI440206B/zh active
- 2006-02-15 WO PCT/US2006/005184 patent/WO2006088877A1/en active Application Filing
- 2006-02-15 CN CNA2006800125477A patent/CN101213681A/zh active Pending
- 2006-02-15 KR KR1020077018994A patent/KR101257780B1/ko active IP Right Grant
- 2006-02-15 EP EP06735037.1A patent/EP1864341B1/en active Active
- 2006-02-15 KR KR1020127029292A patent/KR20130007649A/ko not_active Application Discontinuation
- 2006-02-15 CN CN201710772330.6A patent/CN107507895B/zh active Active
-
2011
- 2011-09-20 JP JP2011204274A patent/JP5806895B2/ja active Active
-
2012
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2017
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Also Published As
Publication number | Publication date |
---|---|
CN101213681A (zh) | 2008-07-02 |
CN107507895B (zh) | 2020-12-01 |
KR101257780B1 (ko) | 2013-04-24 |
EP2546192A3 (en) | 2014-08-27 |
JP5528672B2 (ja) | 2014-06-25 |
WO2006088877A1 (en) | 2006-08-24 |
US20120238047A1 (en) | 2012-09-20 |
MY168191A (en) | 2018-10-15 |
JP2008530802A (ja) | 2008-08-07 |
EP1864341B1 (en) | 2019-11-13 |
CN107507895A (zh) | 2017-12-22 |
US9550614B2 (en) | 2017-01-24 |
US20070103068A1 (en) | 2007-05-10 |
US10014438B2 (en) | 2018-07-03 |
EP2546192B1 (en) | 2019-12-18 |
JP5806895B2 (ja) | 2015-11-10 |
KR20070107708A (ko) | 2007-11-07 |
EP2546192A2 (en) | 2013-01-16 |
TWI440206B (zh) | 2014-06-01 |
US8232722B2 (en) | 2012-07-31 |
TW200727514A (en) | 2007-07-16 |
US20170125635A1 (en) | 2017-05-04 |
JP2012023388A (ja) | 2012-02-02 |
KR20130007649A (ko) | 2013-01-18 |
US20120292595A1 (en) | 2012-11-22 |
EP1864341A1 (en) | 2007-12-12 |
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