ES2672791T3 - Dispositivo fotovoltaico que incluye nanocristales semiconductores - Google Patents

Dispositivo fotovoltaico que incluye nanocristales semiconductores Download PDF

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ES2672791T3
ES2672791T3 ES07796437.7T ES07796437T ES2672791T3 ES 2672791 T3 ES2672791 T3 ES 2672791T3 ES 07796437 T ES07796437 T ES 07796437T ES 2672791 T3 ES2672791 T3 ES 2672791T3
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semiconductor nanocrystals
electrode
transport layer
load
nanocrystals
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Alexi Arango
Vladimir Bulovic
Vanessa Wood
Moungi G. Bawendi
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Massachusetts Institute of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Un dispositivo fotovoltaico que comprende: una primera capa de transporte de carga que incluye un primer material inorgánico en contacto con un primer electrodo dispuesto para introducir carga en la primera capa de transporte de carga; una segunda capa de transporte de carga en contacto con un segundo electrodo, en donde el segundo electrodo está dispuesto para introducir carga en la segunda capa de transporte de carga; y una capa de absorción que comprende una pluralidad de nanocristales semiconductores dispuestos entre la primera capa de transporte de carga y la segunda capa de transporte de carga; en donde la pluralidad de nanocristales semiconductores es una población de nanocristales semiconductores que tienen una desviación de no más del 15 % de media cuadrática en diámetro medio; en donde la pluralidad de nanocristales semiconductores y al menos un electrodo tienen un desplazamiento de banda prohibida suficiente para transferir un portador de carga desde la pluralidad de nanocristales semiconductores hasta el primer electrodo o el segundo electrodo; y caracterizado por que la pluralidad de nanocristales semiconductores forman una multicapa de nanocristales.

Description

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estructura. Una capa de bloqueo puede incluir 3-(4-bifenililo)-4-fenilo-5-terc-butilfenilo-1,2,4-triazol (TAZ), 3,4,5trifenilo-l,2,4-triazol, 3,5-bis(4-terc-butilfenilo)-4-fenilo-1,2,4-triazol, batocuproína (BCP), 4,4',4"-tris{N-(3-metilfenilo)N-fenilamino}trifenilamina (m-MTDATA), dioxitiofeno de polietileno (PEDOT), 1,3-bis(5-(4-difenilamino)fenilo-1,3,4oxadiazol-2-ilo)benceno, 2-(4-bifenililo)-5-(4-terc-butilfenilo)-1,3,4-oxadiazol, 1,3-bis[5-(4-( 1,1 -dimetiletilo)fenilo)1,3,4-oxadiazol-2-ilo]benceno, 1,4-bis(5-(4-difenilamino)fenilo-1,3,4-oxadiazol-2-ilo}benceno o 1,3,5-tris[5-(4-(1,1dimetiletil}fenilo)-1,3,4-oxadiazol-2-ilo]obenceno.
El rendimiento de los dispositivos fotovoltaicos puede mejorarse aumentando su eficiencia. Véanse, por ejemplo, Bulovic y col., Semiconductors and Semimetals 64, 255 (2000), Adachi y col., Appl. Phys. Lett. 78, 1622 (2001), Yamasaki y col., Appl. Phys. Lett. 76, 1243 (2000), Dirr y col., Jpn. J. Appl. Phys. 37, 1457 (1998) y D’Andrade y col., MRS Fall Meeting, BB6.2 (2001). Los nanocristales pueden incluirse en dispositivos emisores de luz eficientes, híbridos y orgánicos/inorgánicos.
Los dispositivos individuales pueden formarse en múltiples localizaciones en un único sustrato para formar una pantalla de visualización. La pantalla de visualización puede incluir dispositivos que emitan a longitudes de onda diferentes. Al definir un patrón en el sustrato con conjuntos de diferentes nanocristales semiconductores emisores de color, puede formarse una pantalla de visualización que incluya píxeles de diferentes colores.
Para formar un dispositivo, un semiconductor de tipo p tal como, por ejemplo, NiO, puede depositarse en un electrodo transparente tal como un óxido de indio y estaño (ITO). El electrodo transparente puede disponerse en un sustrato transparente. Después, los nanocristales semiconductores se depositan usando una técnica de deposición de monocapa simple compatible con áreas grandes tal como la impresión por microcontacto o una técnica de Langmuir-Blodgett (LB). En consecuencia, se aplica un semiconductor de tipo n (por ejemplo, ZnO o TiO2), por ejemplo, por pulverización catódica, encima de esta capa. Un electrodo semiconductor o de metal puede aplicarse sobre esta para completar el dispositivo. También son posibles estructuras de dispositivo más complicadas. Por ejemplo, puede incluirse una capa ligeramente dopada próxima a la capa de nanocristal.
El dispositivo puede ensamblarse haciendo crecer por separado las dos capas de transporte y aplicando físicamente los contactos eléctricos usando un elastómero tal como polidimetilsiloxano (PDMS). Esto evita la necesidad de una deposición directa del material en la capa de nanocristal.
El dispositivo puede tratarse térmicamente después de la aplicación de todas las capas de transporte. El tratamiento térmico puede potenciar, además, la separación de cargas de los nanocristales, así como eliminar los grupos terminales orgánicos en los nanocristales. La inestabilidad de los grupos terminales puede contribuir a la inestabilidad del dispositivo.
Las capas de transporte inorgánicas usadas, en particular, los materiales de metal-óxido pueden actuar como capas de barrera para evitar que el O2 y H2O entren en la capa de absorción del dispositivo (la capa de nanocristal semiconductor). La naturaleza protectora de la capa inorgánica puede proporcionar alternativas de diseño al acondicionamiento. Por ejemplo, puesto que la capa inorgánica puede ser una barrera al agua y/u oxígeno, el dispositivo puede construirse sin la necesidad de componentes adicionales para bloquear tales contaminantes y evitar que alcancen el material de absorción. Los recubrimientos de encapsulado tales como BARIX (fabricado por Vitex) se fabrican usando capas alternas de óxidos de metal y polímeros. En tales barreras, los óxidos de metal son las barreras al O2 y H2O y las capas de polímero aleatorizan las ocurrencias de defectos de burbujas de gas en las capas de óxido de metal. De este modo, usando los óxidos de metal como capas de transporte, el propio dispositivo funciona como una capa protectora para los nanocristales semiconductores.
Las FIG. 3A-3E muestran posibles estructuras del dispositivo. Estas suponen un diseño convencional de diodo p-n (FIG. 3A), un diseño de diodo p-i-n (FIG. 3B), un dispositivo transparente (FIG. 3C), un dispositivo invertido (FIG. 3D) y un dispositivo flexible (FIG. 3E). Debido a la sencillez del dispositivo flexible, es posible incorporar capas de deslizamiento, es decir, estructuras de tres capas de tipo óxido de metal/metal/óxido de metal, para cada capa de óxido de metal de capa simple. Esto ha demostrado aumentar la flexibilidad de películas delgadas de óxido de metal, aumentando la conductividad, y a la vez manteniendo la transparencia. Esto es porque las capas de metal, habitualmente de plata, son muy delgadas (aproximadamente 12 nm cada una) y, por lo tanto, no absorben mucha luz.
Ejemplos
Se depositó un electrodo de óxido de indio y estaño (ITO) de 60 nm de espesor en vidrio, usando pulverización catódica por radio frecuencia en un ambiente inerte de argón. Se usó una velocidad de crecimiento lenta y una baja presión para conseguir una película con menos de 5 nm de rugosidad superficial y calentar el sustrato permitido para un control preciso sobre la resistividad del ITO. 20 nm de óxido de níquel (NiO) fueron sometidos a pulverización catódica por radiofrecuencia encima del electrodo de ITO en argón y oxígeno, dando lugar a una capa de tipo p en la que el porcentaje de O2 determina el número de sitios dadores de huecos de exceso. Los nanocristales de selenuro de cadmio y cinc (ZnCdSe) sintetizados de manera coloidal ajustados para tener una emisión en el rojo fueron sometidos, posteriormente, a recubrimiento por centrifugación en el NiO. Se usó una velocidad de centrifugación
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Claims (1)

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ES07796437.7T 2007-06-25 2007-06-25 Dispositivo fotovoltaico que incluye nanocristales semiconductores Active ES2672791T3 (es)

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US9224895B2 (en) 2015-12-29
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US8525303B2 (en) 2013-09-03
US20110101479A1 (en) 2011-05-05
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US20140035077A1 (en) 2014-02-06
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