PH20860A - Method of making a high voltage dmos transistor - Google Patents

Method of making a high voltage dmos transistor

Info

Publication number
PH20860A
PH20860A PH30889A PH30889A PH20860A PH 20860 A PH20860 A PH 20860A PH 30889 A PH30889 A PH 30889A PH 30889 A PH30889 A PH 30889A PH 20860 A PH20860 A PH 20860A
Authority
PH
Philippines
Prior art keywords
high voltage
making
voltage dmos
dmos transistor
substrate
Prior art date
Application number
PH30889A
Other languages
English (en)
Inventor
Schols Gustaaf
Original Assignee
Int Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Standard Electric Corp filed Critical Int Standard Electric Corp
Publication of PH20860A publication Critical patent/PH20860A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/69433—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10P32/14—
    • H10P32/1406—
    • H10P32/171—
    • H10P76/40—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/082—Ion implantation FETs/COMs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Motor And Converter Starters (AREA)
  • Burglar Alarm Systems (AREA)
  • Glass Compositions (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
  • Element Separation (AREA)
PH30889A 1983-06-27 1984-06-26 Method of making a high voltage dmos transistor PH20860A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE2/60137A BE897139A (nl) 1983-06-27 1983-06-27 Proces voor het maken van een halfgeleider-inrichting en inrichting hierdoor verkregen

Publications (1)

Publication Number Publication Date
PH20860A true PH20860A (en) 1987-05-19

Family

ID=3865640

Family Applications (1)

Application Number Title Priority Date Filing Date
PH30889A PH20860A (en) 1983-06-27 1984-06-26 Method of making a high voltage dmos transistor

Country Status (19)

Country Link
US (1) US4626293A (ro)
EP (1) EP0133204B1 (ro)
JP (1) JPH0646658B2 (ro)
KR (1) KR850000786A (ro)
AT (1) ATE29625T1 (ro)
AU (1) AU570692B2 (ro)
BE (1) BE897139A (ro)
BR (1) BR8402888A (ro)
CA (1) CA1223975A (ro)
DD (1) DD223018A5 (ro)
DE (1) DE3466132D1 (ro)
ES (1) ES8604369A1 (ro)
HU (1) HUT37690A (ro)
PH (1) PH20860A (ro)
PT (1) PT78788B (ro)
RO (1) RO91547B (ro)
TR (1) TR21961A (ro)
YU (1) YU111284A (ro)
ZA (1) ZA844513B (ro)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0256033B1 (en) * 1986-01-22 1993-06-02 Hughes Aircraft Company Optical analog data processing systems for handling bipolar and complex data
JPH0812918B2 (ja) * 1986-03-28 1996-02-07 株式会社東芝 半導体装置の製造方法
JP2604777B2 (ja) * 1988-01-18 1997-04-30 松下電工株式会社 二重拡散型電界効果半導体装置の製法
CH677558A5 (en) * 1988-11-28 1991-05-31 Asea Brown Boveri Deep PN junction mfr. for power thyristor - has oxide layer applied to surface of substrate during diffusion process for doping material
US5668026A (en) * 1996-03-06 1997-09-16 Megamos Corporation DMOS fabrication process implemented with reduced number of masks
JP3292038B2 (ja) * 1996-05-31 2002-06-17 日産自動車株式会社 物入れ
JP3111947B2 (ja) 1997-10-28 2000-11-27 日本電気株式会社 半導体装置、その製造方法
JP3487844B1 (ja) * 2002-06-14 2004-01-19 沖電気工業株式会社 Ｌｄｍｏｓ型半導体装置の製造方法
US8821141B2 (en) 2011-06-23 2014-09-02 Wright Flow Technologies Limited Positive displacement rotary pumps with improved cooling

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919008A (en) * 1970-12-02 1975-11-11 Hitachi Ltd Method of manufacturing MOS type semiconductor devices
US3895390A (en) * 1972-11-24 1975-07-15 Signetics Corp Metal oxide semiconductor structure and method using ion implantation
US3996655A (en) * 1973-12-14 1976-12-14 Texas Instruments Incorporated Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product
US3909320A (en) * 1973-12-26 1975-09-30 Signetics Corp Method for forming MOS structure using double diffusion
US4038107B1 (en) * 1975-12-03 1995-04-18 Samsung Semiconductor Tele Method for making transistor structures
JPS52143759A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Impurity diffusion method for semiconductor wafers
US4179312A (en) * 1977-12-08 1979-12-18 International Business Machines Corporation Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition
DE2802838A1 (de) * 1978-01-23 1979-08-16 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge
JPS5533037A (en) * 1978-08-28 1980-03-08 Nec Corp Manufacture of semiconductor device
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
JPS5556663A (en) * 1978-10-23 1980-04-25 Nec Corp Insulating-gate type field-effect transistor
DE2947350A1 (de) * 1979-11-23 1981-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von mnos-speichertransistoren mit sehr kurzer kanallaenge in silizium-gate-technologie
US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
JPS57170570A (en) * 1981-04-15 1982-10-20 Toshiba Corp Field effect transistor
GB2100507A (en) * 1981-06-17 1982-12-22 Philips Electronic Associated Method of making a vertical igfet
JPH0635272B2 (ja) * 1988-04-04 1994-05-11 日産車体株式会社 ステアリング支持装置
GB9120299D0 (en) * 1991-09-24 1991-11-06 Latchways Ltd Load attachment system, and parts fittings therefor

Also Published As

Publication number Publication date
TR21961A (tr) 1985-12-10
JPH0646658B2 (ja) 1994-06-15
AU2982884A (en) 1985-01-03
AU570692B2 (en) 1988-03-24
RO91547B (ro) 1987-05-01
DE3466132D1 (en) 1987-10-15
ES533752A0 (es) 1985-12-01
PT78788B (en) 1986-07-11
HUT37690A (en) 1986-01-23
YU111284A (en) 1988-02-29
ES8604369A1 (es) 1985-12-01
CA1223975A (en) 1987-07-07
ATE29625T1 (de) 1987-09-15
US4626293A (en) 1986-12-02
JPS6042869A (ja) 1985-03-07
KR850000786A (ko) 1985-03-09
BR8402888A (pt) 1985-05-21
EP0133204B1 (de) 1987-09-09
RO91547A (ro) 1987-04-30
PT78788A (en) 1984-07-01
BE897139A (nl) 1983-12-27
ZA844513B (en) 1985-02-27
DD223018A5 (de) 1985-05-29
EP0133204A1 (de) 1985-02-20

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