MY168492A - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- MY168492A MY168492A MYPI2015000952A MYPI2015000952A MY168492A MY 168492 A MY168492 A MY 168492A MY PI2015000952 A MYPI2015000952 A MY PI2015000952A MY PI2015000952 A MYPI2015000952 A MY PI2015000952A MY 168492 A MY168492 A MY 168492A
- Authority
- MY
- Malaysia
- Prior art keywords
- light emitting
- emitting element
- translucent material
- emitting device
- light
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009101519 | 2009-04-20 | ||
| JP2010080156A JP5482378B2 (ja) | 2009-04-20 | 2010-03-31 | 発光装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY168492A true MY168492A (en) | 2018-11-12 |
Family
ID=42958636
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2015000952A MY168492A (en) | 2009-04-20 | 2010-04-20 | Light emitting device |
| MYPI2010001779A MY163993A (en) | 2009-04-20 | 2010-04-20 | Light emitting device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2010001779A MY163993A (en) | 2009-04-20 | 2010-04-20 | Light emitting device |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US8330182B2 (enExample) |
| JP (1) | JP5482378B2 (enExample) |
| CN (1) | CN101867003B (enExample) |
| MY (2) | MY168492A (enExample) |
Families Citing this family (105)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012033823A (ja) | 2010-08-02 | 2012-02-16 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
| TWI447969B (zh) * | 2010-10-20 | 2014-08-01 | 英特明光能股份有限公司 | 發光二極體封裝結構 |
| JP6369774B2 (ja) * | 2010-10-29 | 2018-08-08 | 株式会社光波 | 発光装置 |
| KR20120066973A (ko) * | 2010-12-15 | 2012-06-25 | 삼성엘이디 주식회사 | 발광 디바이스 및 그 제조방법 |
| KR20120100193A (ko) * | 2011-03-03 | 2012-09-12 | 서울옵토디바이스주식회사 | 발광 다이오드 칩 |
| JP5670249B2 (ja) * | 2011-04-14 | 2015-02-18 | 日東電工株式会社 | 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置 |
| JP5840377B2 (ja) | 2011-04-14 | 2016-01-06 | 日東電工株式会社 | 反射樹脂シートおよび発光ダイオード装置の製造方法 |
| JP5745319B2 (ja) * | 2011-04-14 | 2015-07-08 | 日東電工株式会社 | 蛍光反射シート、および、発光ダイオード装置の製造方法 |
| JP5700544B2 (ja) * | 2011-04-14 | 2015-04-15 | 日東電工株式会社 | 発光ダイオード装置の製造方法 |
| KR20140022019A (ko) * | 2011-04-20 | 2014-02-21 | 가부시키가이샤 에루므 | 발광장치 및 그 제조방법 |
| KR20120119350A (ko) * | 2011-04-21 | 2012-10-31 | 삼성전자주식회사 | 발광소자 모듈 및 이의 제조방법 |
| JP5680472B2 (ja) * | 2011-04-22 | 2015-03-04 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
| KR101798884B1 (ko) * | 2011-05-18 | 2017-11-17 | 삼성전자주식회사 | 발광소자 어셈블리 및 이를 포함하는 전조등 |
| US9269878B2 (en) * | 2011-05-27 | 2016-02-23 | Lg Innotek Co., Ltd. | Light emitting device and light emitting apparatus |
| JP5840388B2 (ja) * | 2011-06-01 | 2016-01-06 | 日東電工株式会社 | 発光ダイオード装置 |
| JP2014515559A (ja) * | 2011-06-01 | 2014-06-30 | コーニンクレッカ フィリップス エヌ ヴェ | 発光デバイスを支持基板に取り付ける方法 |
| JP5744643B2 (ja) * | 2011-06-28 | 2015-07-08 | シチズン電子株式会社 | 発光装置の製造方法 |
| JP5893888B2 (ja) * | 2011-10-13 | 2016-03-23 | シチズン電子株式会社 | 半導体発光装置 |
| JP5856816B2 (ja) * | 2011-11-14 | 2016-02-10 | 株式会社小糸製作所 | 発光装置 |
| DE102012202555A1 (de) * | 2012-02-20 | 2013-08-22 | Osram Gmbh | Led-anordnung |
| DE102012102420B4 (de) * | 2012-03-21 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
| JP5816127B2 (ja) * | 2012-04-27 | 2015-11-18 | 株式会社東芝 | 半導体発光装置およびその製造方法 |
| JP5837456B2 (ja) * | 2012-05-28 | 2015-12-24 | 株式会社東芝 | 半導体発光装置及び発光モジュール |
| JP6179516B2 (ja) * | 2012-08-02 | 2017-08-16 | 日亜化学工業株式会社 | 波長変換装置 |
| JP2014078678A (ja) | 2012-09-18 | 2014-05-01 | Toyoda Gosei Co Ltd | 半導体発光装置の製造方法 |
| KR101980230B1 (ko) * | 2012-10-09 | 2019-09-02 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치용 어레이 기판과, 이의 제조 방법 |
| US9490398B2 (en) * | 2012-12-10 | 2016-11-08 | Citizen Holdings Co., Ltd. | Manufacturing method of light emitting device in a flip-chip configuration with reduced package size |
| JP6097084B2 (ja) | 2013-01-24 | 2017-03-15 | スタンレー電気株式会社 | 半導体発光装置 |
| KR20140115261A (ko) * | 2013-03-20 | 2014-09-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 모듈 및 발광 장치 |
| JP2014225636A (ja) * | 2013-04-16 | 2014-12-04 | 株式会社ディスコ | 発光デバイス |
| US9496465B2 (en) | 2013-04-17 | 2016-11-15 | Nichia Corporation | Light emitting device |
| DE102013207111B4 (de) | 2013-04-19 | 2021-07-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement |
| CZ2013301A3 (cs) * | 2013-04-22 | 2014-07-16 | Crytur Spol. S R. O. | Dioda emitující bílé světlo s monokrystalickým luminoforem a způsob výroby |
| US9287472B2 (en) | 2013-06-27 | 2016-03-15 | Nichia Corporation | Light emitting device and method of manufacturing the same |
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| EP3547379A1 (en) | 2014-03-14 | 2019-10-02 | Citizen Electronics Co., Ltd. | Light emitting apparatus |
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| US9997676B2 (en) | 2014-05-14 | 2018-06-12 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
| US10439111B2 (en) | 2014-05-14 | 2019-10-08 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
| TWI557952B (zh) | 2014-06-12 | 2016-11-11 | 新世紀光電股份有限公司 | 發光元件 |
| CN106575693B (zh) * | 2014-06-19 | 2020-07-31 | 亮锐控股有限公司 | 具有小源尺寸的波长转换发光设备 |
| JP6387773B2 (ja) * | 2014-09-30 | 2018-09-12 | 日亜化学工業株式会社 | 透光部材の製造方法及び発光装置の製造方法 |
| CN111490146B (zh) * | 2014-11-18 | 2024-12-06 | 首尔半导体株式会社 | 发光装置 |
| TWI722925B (zh) * | 2014-12-08 | 2021-03-21 | 荷蘭商露明控股公司 | 波長轉換半導體發光裝置 |
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| TWI649900B (zh) * | 2015-02-04 | 2019-02-01 | 億光電子工業股份有限公司 | Led封裝結構及其製造方法 |
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| TWI657597B (zh) * | 2015-03-18 | 2019-04-21 | 新世紀光電股份有限公司 | 側照式發光二極體結構及其製造方法 |
| CN110767793A (zh) * | 2015-05-05 | 2020-02-07 | 新世纪光电股份有限公司 | 发光装置及其制作方法 |
| JP6179555B2 (ja) * | 2015-06-01 | 2017-08-16 | 日亜化学工業株式会社 | 発光装置 |
| KR102335106B1 (ko) * | 2015-06-19 | 2021-12-03 | 삼성전자 주식회사 | 발광 소자 패키지 및 그 제조 방법 |
| JP6481559B2 (ja) | 2015-08-18 | 2019-03-13 | 日亜化学工業株式会社 | 発光装置 |
| JP6327220B2 (ja) | 2015-08-31 | 2018-05-23 | 日亜化学工業株式会社 | 発光装置 |
| CN106549092A (zh) | 2015-09-18 | 2017-03-29 | 新世纪光电股份有限公司 | 发光装置及其制造方法 |
| JP6249002B2 (ja) * | 2015-09-30 | 2017-12-20 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| CN106601898A (zh) * | 2015-10-19 | 2017-04-26 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
| JP6332294B2 (ja) * | 2015-11-30 | 2018-05-30 | 日亜化学工業株式会社 | 発光装置 |
| US10510934B2 (en) | 2015-11-30 | 2019-12-17 | Nichia Corporation | Light emitting device |
| JP6399017B2 (ja) * | 2016-02-29 | 2018-10-03 | 日亜化学工業株式会社 | 発光装置 |
| JP6754206B2 (ja) * | 2016-03-28 | 2020-09-09 | シチズン時計株式会社 | 発光装置 |
| JP2017183427A (ja) * | 2016-03-29 | 2017-10-05 | 豊田合成株式会社 | 発光装置 |
| TWI735562B (zh) * | 2016-04-08 | 2021-08-11 | 新加坡商新加坡恒立私人有限公司 | 具有孔徑之薄光電模組及其製造 |
| JP6432559B2 (ja) * | 2016-05-17 | 2018-12-05 | カシオ計算機株式会社 | 蛍光体デバイス、照明装置及びプロジェクタ装置 |
| JP6724639B2 (ja) | 2016-08-01 | 2020-07-15 | 日亜化学工業株式会社 | 発光装置 |
| CN107946441A (zh) | 2016-10-12 | 2018-04-20 | 亿光电子工业股份有限公司 | 发光装置及发光二极管封装结构 |
| US10388838B2 (en) | 2016-10-19 | 2019-08-20 | Genesis Photonics Inc. | Light-emitting device and manufacturing method thereof |
| JP6789778B2 (ja) * | 2016-11-25 | 2020-11-25 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
| JP6776859B2 (ja) | 2016-12-09 | 2020-10-28 | 日本電気硝子株式会社 | 波長変換部材の製造方法、波長変換部材及び発光デバイス |
| DE102017101729A1 (de) * | 2017-01-30 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
| JP6579141B2 (ja) | 2017-03-24 | 2019-09-25 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
| JP7082270B2 (ja) | 2017-08-28 | 2022-06-08 | 日亜化学工業株式会社 | 発光装置 |
| JP6575576B2 (ja) * | 2017-10-12 | 2019-09-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| JP6897729B2 (ja) * | 2017-10-12 | 2021-07-07 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| CN109994458B (zh) | 2017-11-05 | 2022-07-01 | 新世纪光电股份有限公司 | 发光装置 |
| US10854780B2 (en) | 2017-11-05 | 2020-12-01 | Genesis Photonics Inc. | Light emitting apparatus and manufacturing method thereof |
| JP7221659B2 (ja) * | 2017-11-17 | 2023-02-14 | スタンレー電気株式会社 | 半導体発光装置 |
| JP6729537B2 (ja) * | 2017-11-20 | 2020-07-22 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| JP7235944B2 (ja) * | 2018-02-21 | 2023-03-09 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| CN110323213B (zh) * | 2018-03-30 | 2024-05-03 | 日亚化学工业株式会社 | 发光装置的制造方法 |
| JP7117127B2 (ja) * | 2018-04-02 | 2022-08-12 | スタンレー電気株式会社 | 発光装置 |
| CN110690331A (zh) * | 2018-07-04 | 2020-01-14 | 深圳市斯迈得半导体有限公司 | 一种用于led高亮高反射的发光器件 |
| JP6989782B2 (ja) * | 2018-08-06 | 2022-02-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| EP3608959B1 (en) | 2018-08-06 | 2023-11-15 | Nichia Corporation | Light emitting device and method for manufacturing same |
| JP6940776B2 (ja) * | 2018-11-05 | 2021-09-29 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| CN109802015B (zh) * | 2018-12-25 | 2024-02-20 | 广东晶科电子股份有限公司 | 一种半导体器件及其封装方法 |
| JP6784287B2 (ja) * | 2018-12-27 | 2020-11-11 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| EP3956925A1 (en) | 2019-04-18 | 2022-02-23 | Lumileds Holding B.V. | Lighting device |
| JP2020188185A (ja) * | 2019-05-16 | 2020-11-19 | スタンレー電気株式会社 | 発光装置 |
| JP7288343B2 (ja) | 2019-05-16 | 2023-06-07 | スタンレー電気株式会社 | 発光装置 |
| JP7267836B2 (ja) * | 2019-05-16 | 2023-05-02 | スタンレー電気株式会社 | 発光装置 |
| JP7257247B2 (ja) * | 2019-05-16 | 2023-04-13 | スタンレー電気株式会社 | 発光装置 |
| JP6793899B1 (ja) | 2019-11-14 | 2020-12-02 | ヌヴォトンテクノロジージャパン株式会社 | 発光装置 |
| EP3905316B1 (en) * | 2019-11-14 | 2023-08-30 | Nuvoton Technology Corporation Japan | Light-emitting device |
| JP7060810B2 (ja) | 2019-11-19 | 2022-04-27 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
| JP7108196B2 (ja) * | 2019-12-26 | 2022-07-28 | 日亜化学工業株式会社 | 発光装置、波長変換部材の製造方法及び発光装置の製造方法 |
| JP7060819B2 (ja) * | 2020-07-01 | 2022-04-27 | 日亜化学工業株式会社 | 発光装置 |
| JP6989807B2 (ja) * | 2020-07-08 | 2022-02-03 | 日亜化学工業株式会社 | 発光装置とその製造方法 |
| DE102020125056A1 (de) | 2020-09-25 | 2022-03-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
| US20220102597A1 (en) * | 2020-09-28 | 2022-03-31 | Tek Beng Low | Light emitting devices having profiled side surfaces |
| JP7044990B2 (ja) * | 2020-12-03 | 2022-03-31 | 日亜化学工業株式会社 | 発光装置 |
| JP7381903B2 (ja) * | 2021-03-31 | 2023-11-16 | 日亜化学工業株式会社 | 発光装置 |
| US20230288037A1 (en) * | 2022-03-14 | 2023-09-14 | Usai, Llc | Flush Glass Adjustable Lighting Fixture |
| KR102837821B1 (ko) * | 2022-05-24 | 2025-07-23 | 주식회사 루츠 | 형광체의 제조방법 |
| DE102023106274A1 (de) * | 2023-03-14 | 2024-09-19 | Ams-Osram International Gmbh | Leuchtvorrichtung und verfahren zum herstellen einer leuchtvorrichtung |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4280050B2 (ja) * | 2002-10-07 | 2009-06-17 | シチズン電子株式会社 | 白色発光装置 |
| JP4020092B2 (ja) | 2004-03-16 | 2007-12-12 | 住友電気工業株式会社 | 半導体発光装置 |
| JP4516337B2 (ja) * | 2004-03-25 | 2010-08-04 | シチズン電子株式会社 | 半導体発光装置 |
| JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
| JP4948818B2 (ja) | 2005-10-28 | 2012-06-06 | 京セラ株式会社 | 発光装置および照明装置 |
| JP2007142289A (ja) * | 2005-11-21 | 2007-06-07 | Sharp Corp | 発光装置 |
| JP5155555B2 (ja) | 2006-12-07 | 2013-03-06 | 日本電気硝子株式会社 | 光部品及びそれを用いた発光装置 |
| RU2489774C2 (ru) * | 2007-11-29 | 2013-08-10 | Нития Корпорейшн | Светоизлучающее устройство и способ его изготовления |
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- 2010-04-19 US US12/662,474 patent/US8330182B2/en active Active
- 2010-04-20 MY MYPI2015000952A patent/MY168492A/en unknown
- 2010-04-20 CN CN2010101674925A patent/CN101867003B/zh active Active
- 2010-04-20 MY MYPI2010001779A patent/MY163993A/en unknown
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| US8921882B2 (en) | 2014-12-30 |
| MY163993A (en) | 2017-11-15 |
| US8525218B2 (en) | 2013-09-03 |
| JP2010272847A (ja) | 2010-12-02 |
| US8330182B2 (en) | 2012-12-11 |
| US20130056781A1 (en) | 2013-03-07 |
| US20100264438A1 (en) | 2010-10-21 |
| US20130313602A1 (en) | 2013-11-28 |
| JP5482378B2 (ja) | 2014-05-07 |
| CN101867003B (zh) | 2013-01-16 |
| CN101867003A (zh) | 2010-10-20 |
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