TR201111169T1 - Işık çıkartan pürüzlü bir yapıya sahip olan ledi cihazı ve bunun üretim metotları. - Google Patents

Işık çıkartan pürüzlü bir yapıya sahip olan ledi cihazı ve bunun üretim metotları.

Info

Publication number
TR201111169T1
TR201111169T1 TR2011/11169T TR201111169T TR201111169T1 TR 201111169 T1 TR201111169 T1 TR 201111169T1 TR 2011/11169 T TR2011/11169 T TR 2011/11169T TR 201111169 T TR201111169 T TR 201111169T TR 201111169 T1 TR201111169 T1 TR 201111169T1
Authority
TR
Turkey
Prior art keywords
rough structure
light
led device
production methods
produces light
Prior art date
Application number
TR2011/11169T
Other languages
English (en)
Inventor
Yen Jui-Kang
Original Assignee
Semileds Optoelectronics Co. Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semileds Optoelectronics Co. Ltd. filed Critical Semileds Optoelectronics Co. Ltd.
Publication of TR201111169T1 publication Critical patent/TR201111169T1/tr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Abstract

Bu buluş, ışık çıkartan pürüzlü bir yapıya sahip olan bir ışık yayan diyot cihazı ve bunun üretim metotları ile ilgili olup, içerisinde ışık çıkartan pürüzlü yapı, ve ışık yayan diyotun ışık çıkartma verimliliğini ve homojenliğini arttırmak için mikron ölçeğinde bir pürüzlülüğe sahiptir.
TR2011/11169T 2009-05-11 2010-05-10 Işık çıkartan pürüzlü bir yapıya sahip olan ledi cihazı ve bunun üretim metotları. TR201111169T1 (tr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098115567A TW201041192A (en) 2009-05-11 2009-05-11 LED device with a roughened light extraction structure and manufacturing methods thereof

Publications (1)

Publication Number Publication Date
TR201111169T1 true TR201111169T1 (tr) 2012-03-21

Family

ID=43061842

Family Applications (1)

Application Number Title Priority Date Filing Date
TR2011/11169T TR201111169T1 (tr) 2009-05-11 2010-05-10 Işık çıkartan pürüzlü bir yapıya sahip olan ledi cihazı ve bunun üretim metotları.

Country Status (7)

Country Link
US (1) US20100283065A1 (tr)
JP (1) JP2012527110A (tr)
KR (1) KR20120016272A (tr)
CN (1) CN102257643A (tr)
TR (1) TR201111169T1 (tr)
TW (1) TW201041192A (tr)
WO (1) WO2010131090A1 (tr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120086035A1 (en) * 2009-05-11 2012-04-12 SemiLEDs Optoelectronics Co., Ltd. LED Device With A Light Extracting Rough Structure And Manufacturing Methods Thereof
US8434883B2 (en) 2009-05-11 2013-05-07 SemiOptoelectronics Co., Ltd. LLB bulb having light extracting rough surface pattern (LERSP) and method of fabrication
CN102157637B (zh) * 2011-01-31 2012-12-19 杭州美卡乐光电有限公司 一种发光器件表面胶体的粗化方法
WO2012174367A2 (en) 2011-06-15 2012-12-20 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
US9142741B2 (en) 2011-06-15 2015-09-22 Sensor Electronic Technology, Inc. Emitting device with improved extraction
US10522714B2 (en) 2011-06-15 2019-12-31 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
US9741899B2 (en) 2011-06-15 2017-08-22 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
US10319881B2 (en) 2011-06-15 2019-06-11 Sensor Electronic Technology, Inc. Device including transparent layer with profiled surface for improved extraction
US9337387B2 (en) 2011-06-15 2016-05-10 Sensor Electronic Technology, Inc. Emitting device with improved extraction
CA2883101A1 (en) 2011-09-06 2013-03-14 Trilogy Environmental Systems Inc. Hybrid desalination system
US9324560B2 (en) 2011-09-06 2016-04-26 Sensor Electronic Technology, Inc. Patterned substrate design for layer growth
US10032956B2 (en) 2011-09-06 2018-07-24 Sensor Electronic Technology, Inc. Patterned substrate design for layer growth
CN102709454A (zh) * 2012-05-30 2012-10-03 上舜照明（中国）有限公司 一种表面粗化的双层胶构造led光源及制作方法
CN103413884B (zh) * 2013-07-31 2015-10-21 深圳市天电光电科技有限公司 Led封装方法
JP6244784B2 (ja) * 2013-09-30 2017-12-13 日亜化学工業株式会社 発光装置
KR102277125B1 (ko) 2014-06-09 2021-07-15 삼성전자주식회사 광원 모듈, 조명 장치 및 조명 시스템
US10461221B2 (en) 2016-01-18 2019-10-29 Sensor Electronic Technology, Inc. Semiconductor device with improved light propagation
CN105810799A (zh) * 2016-03-25 2016-07-27 映瑞光电科技(上海)有限公司 一种提高晶圆级白光led芯片亮度的制备方法及其结构
JP6418200B2 (ja) * 2016-05-31 2018-11-07 日亜化学工業株式会社 発光装置及びその製造方法
CN106226850B (zh) * 2016-08-24 2017-12-05 厦门华联电子股份有限公司 一种球面透镜发光器件
CN110767795B (zh) * 2019-12-27 2020-05-05 华引芯（武汉）科技有限公司 一种微型led发光器件及其制备方法
WO2023167024A1 (ja) * 2022-03-03 2023-09-07 Ａｇｃ株式会社 発光装置

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JP2005251875A (ja) * 2004-03-02 2005-09-15 Toshiba Corp 半導体発光装置
JP4572645B2 (ja) * 2004-09-30 2010-11-04 パナソニック電工株式会社 発光素子の製造方法
CN2829097Y (zh) * 2005-01-25 2006-10-18 宏齐科技股份有限公司 具粗糙化平面的发光二极管
CN1776288A (zh) * 2005-12-14 2006-05-24 南京汉德森半导体照明有限公司 大功率led白光光源的出光透镜
JP4965858B2 (ja) * 2005-12-26 2012-07-04 株式会社東芝 レンズ付発光ダイオード装置
KR100703216B1 (ko) * 2006-02-21 2007-04-09 삼성전기주식회사 발광다이오드 패키지의 제조 방법
KR100793333B1 (ko) * 2006-04-21 2008-01-11 삼성전기주식회사 표면실장형 발광 다이오드 소자의 제조방법
CN101271941A (zh) * 2007-03-20 2008-09-24 亚伯A.S. 发光二极管的封装胶体结构
CN100583473C (zh) * 2007-07-27 2010-01-20 李氏工业有限公司 Led晶片封装方法
JP5578597B2 (ja) * 2007-09-03 2014-08-27 独立行政法人物質・材料研究機構 蛍光体及びその製造方法、並びにそれを用いた発光装置
US20100109025A1 (en) * 2008-11-05 2010-05-06 Koninklijke Philips Electronics N.V. Over the mold phosphor lens for an led

Also Published As

Publication number Publication date
TW201041192A (en) 2010-11-16
US20100283065A1 (en) 2010-11-11
CN102257643A (zh) 2011-11-23
JP2012527110A (ja) 2012-11-01
KR20120016272A (ko) 2012-02-23
WO2010131090A1 (en) 2010-11-18

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