MX9700586A - Reactor de plasma acoplado inductivamente y proceso para fabricar un dispositivo semiconductor. - Google Patents

Reactor de plasma acoplado inductivamente y proceso para fabricar un dispositivo semiconductor.

Info

Publication number
MX9700586A
MX9700586A MX9700586A MX9700586A MX9700586A MX 9700586 A MX9700586 A MX 9700586A MX 9700586 A MX9700586 A MX 9700586A MX 9700586 A MX9700586 A MX 9700586A MX 9700586 A MX9700586 A MX 9700586A
Authority
MX
Mexico
Prior art keywords
inductively coupled
plasma
channel
coupled plasma
semiconductor wafer
Prior art date
Application number
MX9700586A
Other languages
English (en)
Other versions
MXPA97000586A (es
Inventor
Michael J Hartig
John C Arnold
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24424805&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=MX9700586(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of MXPA97000586A publication Critical patent/MXPA97000586A/es
Publication of MX9700586A publication Critical patent/MX9700586A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

La presente invencion se refiere a un reactor de plasma acoplado inductivamente y a un método para procesar una microplaqueta semiconductora (28). El reactor de plasma acoplado inductivamente (10) incluye una fuente de plasma (16) que tiene una pluralidad de canales (38, 44) en donde los gases de procesamiento se suministran independientemente a cada canal. Un sistema para suministro de gas (20) incluye una pluralidad de líneas de alimentacion de gas (34, 35, 36) cada una capaz de suministrar un gasto de flujo individual y composicion de gas a la pluralidad de canales (38, 44) en la fuente de plasma (16). Cada canal se circunda por una bobina RF energizada independientemente (54, 56) tal que la densidad de plasma puede variarse dentro de cada canal (38, 44) de la fuente de plasma (16). En operacion, una capa de material (66) que superpone una microplaqueta semiconductora (28) ya sea se mordenta o deposita uniformemente por control espacial localizado de las características de plasma en cada ubicacion (64) a través de la microplaqueta semiconductora (28).
MX9700586A 1996-02-22 1997-01-22 Reactor de plasma acoplado inductivamente y proceso para fabricar un dispositivo semiconductor. MX9700586A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08605697 1996-02-22
US08/605,697 US5683548A (en) 1996-02-22 1996-02-22 Inductively coupled plasma reactor and process

Publications (2)

Publication Number Publication Date
MXPA97000586A MXPA97000586A (es) 1997-08-01
MX9700586A true MX9700586A (es) 1997-08-30

Family

ID=24424805

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9700586A MX9700586A (es) 1996-02-22 1997-01-22 Reactor de plasma acoplado inductivamente y proceso para fabricar un dispositivo semiconductor.

Country Status (8)

Country Link
US (1) US5683548A (es)
EP (1) EP0792947B1 (es)
JP (1) JP3959145B2 (es)
KR (1) KR100386388B1 (es)
DE (1) DE69734619T2 (es)
MX (1) MX9700586A (es)
SG (1) SG63686A1 (es)
TW (1) TW373226B (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114424318A (zh) * 2019-09-27 2022-04-29 应用材料公司 单片式模块化高频等离子体源

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EP0792947A3 (en) 1999-04-14
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EP0792947B1 (en) 2005-11-16
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