JP5413202B2 - 平坦及び3次元のpecvd被覆において局所的分圧を制御するための局所的直線マイクロ波ソースアレイポンピング - Google Patents
平坦及び3次元のpecvd被覆において局所的分圧を制御するための局所的直線マイクロ波ソースアレイポンピング Download PDFInfo
- Publication number
- JP5413202B2 JP5413202B2 JP2009549573A JP2009549573A JP5413202B2 JP 5413202 B2 JP5413202 B2 JP 5413202B2 JP 2009549573 A JP2009549573 A JP 2009549573A JP 2009549573 A JP2009549573 A JP 2009549573A JP 5413202 B2 JP5413202 B2 JP 5413202B2
- Authority
- JP
- Japan
- Prior art keywords
- tubes
- volume
- substrate
- tube
- precursor gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims description 39
- 238000005086 pumping Methods 0.000 title claims description 22
- 238000000576 coating method Methods 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims description 69
- 239000007789 gas Substances 0.000 claims description 61
- 239000002243 precursor Substances 0.000 claims description 47
- 239000012159 carrier gas Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 13
- 239000002912 waste gas Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims 2
- 239000010408 film Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000010523 cascade reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
Description
Claims (10)
- プラズマ増強型化学気層堆積プロセスにより基板上に膜を堆積するための気相堆積システムにおいて、前記システムは、
真空チャンバーと、
上記真空チャンバー内に配置された複数のプラズマソースと、
二重容積部を有する複数の管と、
を備え、
上記複数の管の各々は、
上記基板へ先駆ガスを配送するための第1容積部と、
上記第1容積部の外側に同心円状に形成された、上記基板から離れた位置から廃棄ガスを除去するためのポンピングを与えるための第2容積部と、を含み、
上記第1容積部の端部は、上記第2容積部の端部から突出している、気相堆積システム。 - 上記複数の管の少なくとも1つに接続された流量レギュレータを更に備え、該流量レギュレータは、上記複数の管のうちの少なくとも1つの管の第1容積部へ流れ込む先駆ガスの量を調整するように構成される、請求項1に記載のシステム。
- 上記複数の管のうちの少なくとも1つの管の第2容積部に接続されたポンプを更に備えた、請求項1に記載のシステム。
- 上記複数の管のうちの第1の管に接続された第1の流量レギュレータであって、上記複数の管のうちの第1の管の第1容積部へ流れ込む先駆ガスの量を調整するように構成された上記第1の流量レギュレータと、
上記複数の管のうちの第2の管に接続された第2の流量レギュレータであって、上記複数の管のうちの第2の管の第1容積部へ流れ込む先駆ガスの量を調整するように構成された上記第2の流量レギュレータと、
を更に備えた請求項1に記載のシステム。 - 上記複数の管のうちの少なくとも1つの管の第2容積部に接続された第3の流量レギュレータであって、上記複数の管のうちの少なくとも1つの管の第2容積部からポンプ送出される排気ガスの量を調整するように構成された第3の流量レギュレータを更に備えた、請求項1に記載のシステム。
- 上記第1の流量レギュレータ及び上記第2の流量レギュレータと通信するコンピュータであって、上記複数の管のうちの第1の管の第1容積部及び上記複数の管のうちの第2の管の第1容積部へ流れ込む先駆ガスの量を調整するように、上記第1の流量レギュレータ及び上記第2の流量レギュレータを調整するよう構成されたコンピュータを更に備えた、請求項4に記載のシステム。
- 上記複数のプラズマソースは、第1の複数のプラズマソースであり、上記複数の管は、第1の複数の管であり、これら第1の複数のプラズマソース及び第1の複数の管は、基板の第1の側に隣接して位置付けられ、上記システムは、更に、
上記真空チャンバー内に配置された第2の複数のプラズマソースと、
先駆ガスを配送するための第1容積部及びポンピングを与えるための第2容積部を各々含む第2の複数の管と、
を備え、上記第2の複数のプラズマソース及び上記第2の複数の管は、基板の第2の側に隣接して位置付けられる、請求項1に記載のシステム。 - 上記複数のプラズマソースの少なくとも1つを部分的に取り巻くシールドと、
上記シールド内に位置付けられたキャリアガス供給部と、
を更に備えた請求項1に記載のシステム。 - 上記複数のプラズマソースのうちの対応する1つを部分的に取り巻くように各々構成された複数のシールドと、
上記複数のシールドのうちの対応する1つの中に各々位置付けられた複数のキャリアガス源と、
上記複数のプラズマソースと同じ基板側の上に配置され、キャリアガス、先駆ガス、及び、廃棄ガスを除去する上側ポンピング通気口と、
上記上側ポンピング通気口に接続されたポンプと、
を更に備えた請求項1に記載のシステム。 - 上記上側ポンピング通気口は、
複数の上側ポンピング通気口と、
上記複数の上側通気口を接続するダクトと、
を備えた請求項9に記載のシステム。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2007/062206 WO2008100315A1 (en) | 2007-02-15 | 2007-02-15 | Localized linear microwave source array pumping to control localized partial pressure in flat and 3 dimensional pecvd coatings |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010519409A JP2010519409A (ja) | 2010-06-03 |
JP5413202B2 true JP5413202B2 (ja) | 2014-02-12 |
Family
ID=39690380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009549573A Expired - Fee Related JP5413202B2 (ja) | 2007-02-15 | 2007-02-15 | 平坦及び3次元のpecvd被覆において局所的分圧を制御するための局所的直線マイクロ波ソースアレイポンピング |
Country Status (5)
Country | Link |
---|---|
US (1) | US8382900B2 (ja) |
EP (1) | EP2121816A1 (ja) |
JP (1) | JP5413202B2 (ja) |
KR (1) | KR101354253B1 (ja) |
WO (1) | WO2008100315A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10858727B2 (en) | 2016-08-19 | 2020-12-08 | Applied Materials, Inc. | High density, low stress amorphous carbon film, and process and equipment for its deposition |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3267306B2 (ja) * | 1991-02-14 | 2002-03-18 | 株式会社日立製作所 | 半導体装置の製造方法 |
JPH08222548A (ja) * | 1995-02-16 | 1996-08-30 | Hitachi Ltd | プラズマ処理装置および基体のプラズマ処理方法 |
US5683548A (en) * | 1996-02-22 | 1997-11-04 | Motorola, Inc. | Inductively coupled plasma reactor and process |
DE19643865C2 (de) * | 1996-10-30 | 1999-04-08 | Schott Glas | Plasmaunterstütztes chemisches Abscheidungsverfahren (CVD) mit entfernter Anregung eines Anregungsgases (Remote-Plasma-CVD-Verfahren) zur Beschichtung oder zur Behandlung großflächiger Substrate und Vorrichtung zur Durchführung desselben |
US6287990B1 (en) * | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
US6015595A (en) * | 1998-05-28 | 2000-01-18 | Felts; John T. | Multiple source deposition plasma apparatus |
JP4120546B2 (ja) * | 2002-10-04 | 2008-07-16 | 株式会社Ihi | 薄膜形成方法及び装置並びに太陽電池の製造方法及び装置並びに太陽電池 |
-
2007
- 2007-02-15 JP JP2009549573A patent/JP5413202B2/ja not_active Expired - Fee Related
- 2007-02-15 WO PCT/US2007/062206 patent/WO2008100315A1/en active Application Filing
- 2007-02-15 US US12/527,281 patent/US8382900B2/en not_active Expired - Fee Related
- 2007-02-15 KR KR1020097019173A patent/KR101354253B1/ko active IP Right Grant
- 2007-02-15 EP EP07710482A patent/EP2121816A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP2010519409A (ja) | 2010-06-03 |
KR20100014398A (ko) | 2010-02-10 |
KR101354253B1 (ko) | 2014-01-22 |
EP2121816A1 (en) | 2009-11-25 |
WO2008100315A1 (en) | 2008-08-21 |
US8382900B2 (en) | 2013-02-26 |
US20100075033A1 (en) | 2010-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20230068370A (ko) | 중공 음극 방전 (hcd) 을 억제하는 용량적으로 결합된 플라즈마 전극 및 가스 분배 대면플레이트 | |
TWI324637B (en) | System and method for power function ramping of microwave linear discharge sources | |
KR20110031466A (ko) | 가스 분배 샤워헤드 스커트 | |
CN101971292A (zh) | 等离子体cvd用阴电极和等离子体cvd装置 | |
JP5659225B2 (ja) | プラズマ堆積ソースおよび薄膜を堆積させるための方法 | |
US8617350B2 (en) | Linear plasma system | |
JP5413202B2 (ja) | 平坦及び3次元のpecvd被覆において局所的分圧を制御するための局所的直線マイクロ波ソースアレイポンピング | |
US20180073147A1 (en) | Remote plasma generator of remote plasma-enhanced chemical vapor deposition (pecvd) system | |
WO2020039190A1 (en) | Method of generating a uniform high density plasma sheet | |
WO2020039188A1 (en) | Apparatus for generating a high density plasma | |
JP2010519408A (ja) | 化学気相堆積プロセスを制御するシステム及び方法 | |
CN101946366B (zh) | 具有阻抗转换部的集成微波波导 | |
US8501528B2 (en) | Radiofrequency plasma reactor and method for manufacturing vacuum process treated substrates | |
CN112640028A (zh) | 用于产生和处理均匀的高密度等离子体片的方法 | |
WO2020039192A1 (en) | A high density plasma generating apparatus | |
WO2020039191A1 (en) | A high density plasma generating apparatus | |
KR101781290B1 (ko) | 대면적 표면파 플라즈마 장치 및 이를 이용하여 전기전도성 다이아몬드 코팅방법 | |
CN109207965B (zh) | 平板电极结构和等离子体沉积设备 | |
US20080113107A1 (en) | System and method for containment shielding during pecvd deposition processes | |
GB2576542A (en) | An apparatus | |
GB2576544A (en) | An apparatus | |
WO2020039193A1 (en) | A high density plasma generating apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20101130 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120904 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120925 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121130 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121221 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130212 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130509 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130516 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130607 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130614 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130709 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130717 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130809 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130903 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131001 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131007 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131024 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131028 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20131024 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5413202 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |